Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
12/2009
12/09/2009EP2130953A2 Epitaxial silicon wafer and method for producing the same
12/09/2009EP2129815A1 Method and device for the production of a compound semiconductor material by means of gas phase epitaxy
12/09/2009CN201358291Y Metallic gallium longitudinal temperature gradient coagulation and purification device
12/09/2009CN101600820A Sapphire substrates and methods of making same
12/09/2009CN101600819A Method for manufacturing a single crystal of nitride by epitaxial growth on a substrate preventing growth on the edges of the substrate
12/09/2009CN101597801A Zr-Cu-Ce mixed lithium niobate crystal and preparation method
12/09/2009CN101597800A Zr-Fe-Mn mixed lithium niobate crystal and preparation method thereof
12/09/2009CN101597799A One-dimensional photonic crystal with heterostructure
12/09/2009CN101597798A Codoping modified lithium gadolinium borate scintillation crystal and preparation method thereof
12/09/2009CN101597797A Ytterbium-doped lithium gadolinium borate laser crystal and preparation method thereof
12/09/2009CN101597796A Growing method of lithium gadolinium borate crystal
12/09/2009CN101597795A Epitaxially coated silicon wafer with 110 orientation and method for producing it
12/09/2009CN101597794A Czochralski silicon single crystal doped with gallium and germanium
12/09/2009CN101597793A Crucible for growing polysilicon ingot
12/09/2009CN101597792A Method for casting nitrogen-doped polysilicon with controllable nitrogen concentration under nitrogen
12/09/2009CN101597791A Nitrogen doped unidirectional solidification casting polysilicon and preparation method thereof
12/09/2009CN101597790A Method for preparing cast polycrystalline silicon through melting silicon and doping nitrogen under nitrogen
12/09/2009CN101597788A Method for preparing cast nitrogen-doped monocrystalline silicon through melting polycrystalline silicon under nitrogen
12/09/2009CN101597787A Method for casting nitrogen-doped monocrystalline silicon with controllable nitrogen concentration under nitrogen
12/09/2009CN101597759A Method for preparing cubic boron nitride films from boron films
12/09/2009CN101597062A Automatic power regulation device for polysilicon reducing furnace
12/09/2009CN101597061A Device for preparing high-purity polysilicon
12/09/2009CN101597060A Video monitoring device for polysilicon growth
12/09/2009CN100567597C Method and apparatus for rapid crystallization of biomolecules
12/09/2009CN100567596C Method for producing silicon carbide (SiC) single crystal
12/09/2009CN100567595C Growing method of lanthanum aluminate crystal
12/09/2009CN100567594C Method for synthesizing spindle-shaped and bar-shaped La2CuO4 by using copper oxide as crystal seed
12/09/2009CN100567593C Artificial corundum crystal
12/09/2009CN100567592C Diamond composite substrate and process for producing the same
12/09/2009CN100567591C Method for producing directionally solidified silicon ingots
12/09/2009CN100567590C Method for reducing helix dislocation density of ZnO crystal under hydro-thermal method
12/08/2009US7630838 Method for identifying agents that interact with beta-site APP cleaving enzyme (BACE)
12/08/2009US7629625 Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device
12/08/2009US7628974 Control of carbon nanotube diameter using CVD or PECVD growth
12/08/2009US7628856 Method for producing substrate for single crystal diamond growth
12/08/2009US7628853 Lithium tantalate substrate and process for its manufacture
12/03/2009WO2009146384A1 Hexagonal wurtzite single crystal
12/03/2009WO2009145129A1 AlXGa1-XN SINGLE CRYSTAL AND ELECTROMAGNETIC WAVE TRANSMISSION BODY
12/03/2009US20090298265 Method of Manufacturing III Nitride Crystal, III Nitride Crystal Substrate, and Semiconductor Device
12/03/2009US20090298214 Method of growing nitride single crystal and method of manufacturing nitride semiconductor light emitting device
12/03/2009US20090297426 Silicon wafer
12/03/2009DE102009003296A1 N-leitender Gruppe III Nitrid-basierter Verbindungshalbleiter und Herstellungsverfahren dafür N-type group III nitride-based compound semiconductor and manufacturing method thereof
12/03/2009DE102008062049A1 Manufacture of low-oxygen concentrated silicon single crystal for silicon semiconductor, involves subjecting raw material silicon to silicon single crystal drawing by horizontal magnetic field type Czochralski method
12/03/2009CA2666237A1 Apparatus for converting electrical energy for conductively heating semiconductor material in rod form
12/02/2009EP2128310A1 Method for measuring distance between lower end surface of heat shielding member and material melt surface, and method for controlling the distance
12/02/2009EP2128309A1 Method of manufacturing III nitride crystal, III nitride crystal substrate, and semiconductor device
12/02/2009EP2128284A1 Ni-BASED SINGLE CRYSTAL SUPERALLOY AND TURBINE VANE USING THE SAME
12/02/2009EP2128218A1 Powdery phosphor and process for producing the same, and light emitting device, display device and fluorescent lamp containing powdery phosphor
12/02/2009EP2128088A1 Apparatus and method for manufacturing silicon substrate, and silicon substrate
12/02/2009EP2127733A1 Hydrogen permeable film and method for manufacturing the same
12/02/2009EP2126984A2 Iii-nitride light emitting diodes grown on templates to reduce strain
12/02/2009EP2126163A2 Guided diameter sic sublimation growth with multi-layer growth guide
12/02/2009EP2126162A1 New laser uses for single-crystal cvd diamond
12/02/2009EP2126161A1 Device and method for selectively depositing crystalline layers using mocvd or hvpe
12/02/2009CN101595565A Method of producing precision vertical and horizontal layers in a vertical semiconductor structure
12/02/2009CN101595250A Method for producing group 3-5 compound semiconductor
12/02/2009CN101595249A Method for growing a crystalline composition comprising gallium nitride
12/02/2009CN101591812A Production technology for brazing diamond polycrystal and used mold thereof
12/02/2009CN101591811A Method for preparing III-V compound semiconductor nanotube structure material by GSMBE
12/02/2009CN101591810A Method of manufacturing III nitride crystal, III nitride crystal substrate, and semiconductor device
12/02/2009CN101591809A Large-size hydrated sodium borate non-linear optical crystal, preparation method and application thereof
12/02/2009CN101591808A Germanium-doped directionally solidified casting monocrystalline silicon and preparation method thereof
12/02/2009CN101591807A Nitrogen-doped directionally solidified casting monocrystalline silicon and preparation method thereof
12/02/2009CN101591806A Preparation method of solar energy Phi 6 inches dislocation-free single crystal silicon
12/02/2009CN101591805A Three-in-one polysilicon directional crystallization stove
12/02/2009CN101591804A Method and equipment for high-temperature liquid phase heating crystallization
12/02/2009CN101591803A High-temperature carborundum double-chamber hot wall type epitaxial growth device
12/02/2009CN100565820C Silicon wafer and method for producing same
12/02/2009CN100565800C Method for obtaining single crystal nitride substrate containing gallium
12/02/2009CN100564617C In-situ corrosion method for reducing HVPE GaN thin film dislocation density
12/02/2009CN100564616C Method of manufacturing compound single crystal and apparatus for manufacturing it
12/02/2009CN100564614C Process for finishing a single-crystal metal sheet or oriented solidification metal sheet surface
12/02/2009CN100564613C High specific surface area single-crystal meso-pore calcium oxide particle preparation method
12/02/2009CN100564256C Process of synthesizing spherical doped polycrystalline lithium niobate material with homogeneous component
12/02/2009CN100564251C Method and catalyst for producing carbon nano tube
12/02/2009CN100564244C Preparation method of palladium nanometer wire ordered array material
12/01/2009US7625448 Inlet system for an MOCVD reactor
12/01/2009US7625446 High temperature high pressure capsule for processing materials in supercritical fluids
12/01/2009CA2517024C .beta.-ga2o3 single crystal growing method, thin-film single crystal growing method, ga2o3 light-emitting device, and its manufacturing method
11/2009
11/28/2009CA2666034A1 Method of manufacturing iii nitride crystal, iii nitride crystal substrate, and semiconductor device
11/26/2009WO2009142311A1 Group iii nitride semiconductor laminate structure and process for producing the group iii nitride semiconductor laminate structure
11/26/2009WO2009142284A1 Method for production of molded fluoride crystal article, optical member produced by the method, and optical device and ultraviolet ray washing device each comprising the optical member
11/26/2009WO2009122113A3 Method for producing nanostructures on a metal oxide substrate and thin film device
11/26/2009US20090291287 Coloured diamond
11/26/2009US20090289330 Group iii nitride semiconductor substrate, substrate for group iii nitride semiconductor device, and methods of making same
11/26/2009US20090289270 Group iii nitride semiconductor multilayer structure and production method thereof
11/26/2009DE102004020058B4 Verfahren zum Abscheiden einer Schicht aus einer Formgedächtnislegierung A method of depositing a layer of a shape memory alloy
11/25/2009EP2123803A2 Welding method
11/25/2009EP2123802A1 N-type conductive aluminum nitride semiconductor crystal and method for producing the same
11/25/2009EP2123801A1 Method and equipment for producing group-iii nitride
11/25/2009EP2122017A1 Reactor for growing crystals
11/25/2009EP2122016A1 Crystalline composition, wafer, and semi-conductor structure
11/25/2009EP2122015A1 Method for manufacturing a single crystal of nitride by epitaxial growth on a substrate preventing growth on the edges of the substrate
11/25/2009EP2121998A2 Polycrystalline diamond (pcd) materials
11/25/2009EP2121186A2 Method for following up the crystallisation of a substance, and corresponding microfluidic device and screening method
11/25/2009CN201351183Y High-efficient gypsum whisker reaction furnace
11/25/2009CN101589181A Process for the synthesis of nanosize metal-containing nanoparticles and nanoparticle dispersions
11/25/2009CN101588010A Molybdate laser crystal doped with erbium ions, ytterbium ions and cerium ions and application thereof
11/25/2009CN101588009A Tungstate laser crystal doped with erbium ions, ytterbium ions and cerium ions and application thereof
11/25/2009CN101586913A Crucible holding member and method for producing the same
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