Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
10/2009
10/27/2009US7608147 Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them
10/27/2009US7608144 Pulse sequencing lateral growth method
10/25/2009CA2663779A1 Freestanding iii-nitride single-crystal substrate and method of manufacturing semiconductor device utilizing the substrate
10/22/2009WO2009128575A1 Low temperature polycrystalline growth
10/22/2009WO2009128434A1 Method of growing aln crystals, and aln laminate
10/22/2009WO2009128301A1 Diamond semiconductor device and method for manufacturing the same
10/22/2009WO2009128224A1 Process for producing crystalline silicon carbide substrate
10/22/2009WO2009127857A1 Semiconductor nanocrystals
10/21/2009EP2110466A2 Silicon single crystal manufacturing method and silicon wafer
10/21/2009EP2109695A2 Crystalline gallium nitride and associated wafer and device
10/21/2009CN101562214A Method for doping titanium dioxide nanotube array
10/21/2009CN101562128A Nitride semiconductor substrate and processing method thereof
10/21/2009CN101560696A Laser crystals doped with holmium, chromium, erbium, thulium and yttrium aluminum garnet, and preparation method thereof
10/21/2009CN101560695A Method for preparing binary magnetic oxide single crystal nanoplate
10/21/2009CN101560694A Controllable preparation method for silicideb nanometer belts/nanometer sheets
10/21/2009CN101560693A Method for preparing solar energy level silicon crystals containing doped element
10/21/2009CN101560692A Growth method of non-polar plane InN material
10/21/2009CN101560647A Preparation method of GaN-based material featuring epitaxial layer growth
10/21/2009CN101559973A Method for preparing nano zinc oxide and crystal whisker zinc oxide by using industrial zinc sulfate as raw material
10/21/2009CN101559945A Method for preparing high purity polysilicon by utilizing silica nanoparticles and device thereof
10/21/2009CN101559492A Preparation method of metal nanometer line with controllable size
10/21/2009CN100552888C Gallium nitride semiconductor substrate and process for producing the same
10/21/2009CN100552873C Preparing method of ferroelectric optical superlattice
10/21/2009CN100552098C Method for preparing nano dendritic crystal of lead sulfide
10/21/2009CN100552097C Method for in-situ preparation of PbTiO3 nano-tube array film by using hydrothermal process
10/21/2009CN100552096C Improved temperature gradient method for BaY2F8 monocrystal growing and device therefor
10/21/2009CN100552094C Process for producing indium oxide nanocrystalline with controlled shape
10/21/2009CN100551514C Preparing method of green man-made diamond
10/20/2009US7604877 Ferroelectric film with ferroelectric domain array
10/20/2009US7604846 Provides a diamond having various colors with unifom, permanent color development effects
10/20/2009CA2412855C Thick single crystal diamond layer method for making it and gemstones produced from the layer
10/15/2009WO2009125731A1 Group iii nitride semiconductor element and epitaxial wafer
10/15/2009WO2009125534A1 Single crystal pulling apparatus
10/15/2009WO2009125009A1 Method of preparing zinc oxide (zno) polycrystals and single crystals on a seed by chemically activated high-temperature sublimation and device for implementing it
10/15/2009US20090258255 Method for Producing Diamond Having Acicular Projection Array Structure on Surface thereof, Diamond Material, Electrode and Electronic Device
10/15/2009US20090257929 Device and method for forming macromolecule crystal
10/14/2009EP2108714A1 Microwave plasma cvd system
10/14/2009EP2108195A1 Electronic field effect devices and methods for their manufacture
10/14/2009EP2108063A2 Diamond electronic devices and methods for their manufacture
10/14/2009EP2108062A2 Diamond electronic devices including a surface and methods for their manufacture
10/14/2009EP2108061A2 Crystal growth in a solution in stationary conditions
10/14/2009EP2108054A1 Plasma etching of diamond surfaces
10/14/2009EP1372805B1 Efg crystal growth apparatus and method
10/14/2009CN201326036Y Silicon nitride film baking device of quartz crucible for polysilicon solar battery cast ingot
10/14/2009CN201326034Y Multiple linkage energy-saving hearth group of corundum crystal synthesizing device through flame fusion method
10/14/2009CN201326033Y Single crystal silicon bar facilitating wire cutting
10/14/2009CN201326032Y Silicon core electrode for polysilicon reducing furnace
10/14/2009CN201326031Y Inlet duct of PLC automatically controlled polycrystalline silicon reduction furnace
10/14/2009CN201326030Y Polysilicon reducing furnace
10/14/2009CN101558188A Process for producing group iii elment nitride crystal, and group iii element nitride crystal
10/14/2009CN101558187A Method for producing group III nitride-based compound semiconductor crystal
10/14/2009CN101555629A Preparation method of self-assembled sulfonic acid group silane-titanium dioxide composite film on monocrystalline silicon substrate surface
10/14/2009CN101555627A Laser peeling method of gallium nitride-based epitaxial film
10/14/2009CN101555626A Mg/Er-LiNbO3 crystal with high near infrared luminous intensity and preparation method thereof
10/14/2009CN101555625A Heavily doped photodamage resistant element Er-LiNbO3 crystal and preparation method thereof
10/14/2009CN101555624A Synthetic method for uniform mono-dispersion Alpha-Fe2O3 single chip
10/14/2009CN101555623A Method for in-situ growth of potassium dihydrogen phosphate single crystal in environmental scanning electronic microscope
10/14/2009CN101555622A Low temperature catalysis and synthesis method of tungsten monocrystalline whisker
10/14/2009CN101555621A Method for growing silicon single crystal by nitrogen-doped inoculating crystal
10/14/2009CN101555619A Preparation method of controllable yttrium silicate nano-rod
10/14/2009CN101555014A Combined polysilicon purification and solidification crucible
10/14/2009CN100550303C Group III nitride crystal, method of its manufacture
10/14/2009CN100549767C Faraday rotator
10/14/2009CN100549246C Cr5+: RVO4 crystal, preparation method and laser passive Q-switched device
10/14/2009CN100549245C Preparation process of nanometer silicon crystal
10/14/2009CN100549244C Rectangular bimetallic nano rod with gold nucleus and palladium shell and method for making the same
10/14/2009CN100549243C Method for epitaxial growing AlxGa1-xN single crystal film on saphire lining bottom material
10/14/2009CN100548873C Method for manufacturing highly-crystallized oxide powder
10/13/2009US7601986 Epitaxial semiconductor structures having reduced stacking fault nucleation sites
10/13/2009US7601447 Electrolyte-electrode assembly comprising an isotropic layer
10/13/2009US7601441 single polytype single crystal silicon carbide wafer, diameter greater than 3 inches and less than 5 inches, resistivity greater than 10,000 ohm-cm, a micropipe density less than 200 cm-2, combined concentration of shallow level dopants less than 5E16 cm-3
10/13/2009US7601424 Stabilized semiconductor nanocrystals
10/13/2009CA2517764C Silicon production apparatus
10/13/2009CA2433887C Chemical monolayer and micro-electronic junctions and devices containing same
10/08/2009WO2009122974A1 Zinc oxide single crystal and method for producing the same
10/08/2009WO2009122936A1 Quartz glass crucible and process for producing the same
10/08/2009WO2009122648A1 Silicon single crystal wafer, method for fabricating silicon single crystal or method for fabricating silicon single crystal wafer, and semiconductor device
10/08/2009WO2009122113A2 Method for producing nanostructures on metal oxide substrate, method for depositing thin film on same, and thin film device
10/08/2009WO2009121171A1 Method for depositing silicon nanocrystals in hollow fibers
10/08/2009US20090250790 Nitride semiconductor wafer and method of processing nitride semiconductor wafer
10/08/2009DE112008000033T5 Verfahren zum Herstellen eines Einkristalls A method of manufacturing a single crystal
10/08/2009DE112007002881T5 Verfahren zur Herstellung einer Dünnschicht und durch das Verfahren hergestellte hexagonale piezoelektrische Dünnschicht A process for producing a thin film and thin-film piezoelectric hexagonal produced by the process
10/07/2009EP2107597A1 Gallium nitride crystal
10/07/2009EP2107138A2 Apparatus for producing silicon carbide single crystal
10/07/2009EP2107041A2 Mold having nanometric features, method for realising such a mold and corresponding use of it in a method for realising an array of carbon nanotubes
10/07/2009EP2106465A1 Arrangement and method for producing a crystal from the melt of a raw material and monocrystal
10/07/2009EP2106464A1 Process for the synthesis of nanosize metal-containing nanoparticles and nanoparticle dispersions
10/07/2009CN201321506Y Guide shell of solar silicon single crystal furnace thermal field
10/07/2009CN201321505Y Device for growing lithium aluminate crystal by Czochralski method
10/07/2009CN101553606A Reactor for growing crystals
10/07/2009CN101553605A Group III element nitride substrate, substrate with epitaxial layer, processes for producing these, and process for producing semiconductor element
10/07/2009CN101553604A Process for producing single crystal of silicon carbide
10/07/2009CN101550602A CaSO* crystal whisker with desulfurized gypsum as raw material and preparing method
10/07/2009CN101550601A Zinc tartrate ferroelectric materials and method for preparing the same
10/07/2009CN101550600A A method to prepare a high-purity high-density monocrystalline silicon nitride nano array
10/07/2009CN101550599A Preparation method of boron nitride crystal whisker
10/07/2009CN101550598A Tin-doped lithium niobate crystal
10/07/2009CN101550597A Method for preparing Cr**:Ca*GeO* laser crystal
10/07/2009CN101550596A Method for preparing tetra-pod-like or multi-pod like Zinc Oxide whisker by liquid metallic zinc
10/07/2009CN101550595A Method for preparing pure rutile-phase titanium dioxide single crystalline nanorod without template in low temperature