Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
10/2009
10/07/2009CN101550594A Method for preparing phosphorite crystal whisker using natural phosphorite as raw material
10/07/2009CN101550593A Method for preparing upcoversion nanocrystalline on rare-earth adulterating fluoride
10/07/2009CN101550592A Method for preparing iron silicide nano wires
10/07/2009CN101550591A Monodisperse C* nano unit crystal material and method for preparing same
10/07/2009CN101550586A Growing technique of ZnTe monocrystal
10/07/2009CN101550585A Method for producing dehydrated calcium sulfate whisker
10/07/2009CN100547734C Semiconductor multilayer substrate, semiconductor free-standing substrate, method for manufacturing semiconductor multilayer substrate and semiconductor free-standing substrate, and semiconductor elem
10/07/2009CN100547125C Y and Zn double doping lead tungstate crystal and preparation method thereof
10/07/2009CN100547124C Growing method for carbon-doped sapphire crystal
10/07/2009CN100547123C Preparation process of nanometer monocrystalline zinc oxide film material
10/07/2009CN100547122C Vacancy-dominated, defect-free silicon
10/01/2009WO2009120505A1 Epitaxial growth on low degree off-axis silicon carbide substrates and semiconductor devices made thereby
10/01/2009WO2009119896A1 Aln bulk single crystal, semiconductor device, and process for producing aln single crystal bulk
10/01/2009WO2009119411A1 Process for producing zno single crystal, self-supporting zno single-crystal wafer obtained by the same, self-supporting wafer of mg-containing zno mixed single crystal, and process for producing mg-containing zno mixed single crystal for use in the same
10/01/2009WO2009119357A1 Epitaxial substrate for semiconductor element, semiconductor element, and process for producing epitaxial substrate for semiconductor element
10/01/2009WO2009119356A1 Epitaxial substrate for smeiconductor element, semiconductor element, and process for producing epitaxial substrate for semiconductor element
10/01/2009WO2009119342A1 Silicon single crystal pull-up apparatus and process for producing silicon single crystal
10/01/2009WO2009119338A1 Sintered silicon wafer
10/01/2009WO2009119159A1 Substrate for optical device and method for manufacturing the substrate
10/01/2009WO2009118993A1 Single crystal manufacturing apparatus and single crystal manufacturing method
10/01/2009WO2009118353A2 Metallic nanocrystal encapsulation
10/01/2009WO2009117770A1 Crystalline inorganic species having optimised reactivity
10/01/2009WO2009100173A3 Demethylation and inactivation of protein phosphatase 2a
10/01/2009CA2719826A1 Aln bulk single crystal, semiconductor device using the same and method for producing the same
10/01/2009CA2718757A1 Epitaxial growth on low degree off-axis silicon carbide substrates and semiconductor devices made thereby
09/2009
09/30/2009EP2105523A1 Epitaxial silicon wafer and method for its manufacturing
09/30/2009EP2104754A1 Production of single-crystal semiconductor material using a nanostructure template
09/30/2009CN201317832Y De-primary valency device used for VGF gallium arsenide monocrystal
09/30/2009CN101545143A Annealing method for improving luminous efficiency of cerium-doped yttrium aluminum garnet crystal
09/30/2009CN101545142A Method for preparing Si3N4 composite film on surface of monocrystalline silicon chip
09/30/2009CN101545141A Sulfurized gallium and barium monocrystal as well as growing method and infrared nonlinear optical device thereof
09/30/2009CN101545140A Cerium manganese co-doped yttrium (lutetium) aluminate ultra fast scintillation crystal and preparation method thereof
09/30/2009CN101545139A Method for preparing yttrium barium copper oxygen superconducting block material by taking Ba3Cu5*Ox powder as fluid
09/30/2009CN101545138A Non-linear optical crystal-sodium beryllate borate, growth method and application thereof
09/30/2009CN101545137A Erbium ion activated borate laser crystal and method for preparing same and application thereof
09/30/2009CN101545135A Method for preparing and purifying solar grade silicon crystal
09/30/2009CN101545134A Method and device for preparing high-purity single crystal silicon bar by utilizing silicon material containing impurities
09/30/2009CN101545133A Method for growing rare-earth ferrite magneto-optical crystal
09/30/2009CN101544385A Calcined soda and gypsum crystal whisker co-production technology by Glauber's salt organic amine method
09/30/2009CN101544372A Polycrystalline silicon manufacturing apparatus
09/30/2009CN101544371A Polymer inactivation method for polycrystalline silicon manufacturing device
09/29/2009US7596455 Crystallization of IGF-1
09/29/2009US7596251 Automated sample analysis system and method
09/29/2009US7595111 Methods to continuous, monoatomic thick structures
09/29/2009US7594968 Ultratough CVD single crystal diamond and three dimensional growth thereof
09/29/2009US7594966 Method for producing a single crystal
09/24/2009WO2009117545A1 System and method for arranging heating element in crystal growth apparatus
09/24/2009WO2009116581A1 Method for producing silicon carbide single crystal
09/24/2009US20090239356 Device manufacturing method
09/24/2009DE19911755B4 Vorrichtung zum Ziehen eines Halbleiterkristalls und Verfahren zum Ziehen Apparatus for pulling a semiconductor crystal and method for pulling
09/24/2009DE102008013325A1 Halbleiterscheibe aus einkristallinem Silicium und Verfahren zu deren Herstellung Semiconductor wafer made of monocrystalline silicon, and process for their preparation
09/23/2009EP2104134A2 Semiconductor device manufacturing method
09/23/2009EP2103721A1 PROCESS FOR PRODUCTION OF GaN CRYSTALS, GaN CRYSTALS, GaN CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICES, AND APPARATUS FOR PRODUCTION OF GaN CRYSTALS
09/23/2009EP2102391A2 Gallium nitride crystals and wafers
09/23/2009CN101538742A Single band difference superlattice structure and preparation thereof
09/23/2009CN101538741A Synthetic utilization method of gallium arsenide polycrystal tail
09/23/2009CN101538740A AlGaN film material and growing method thereof
09/23/2009CN101538739A Cadmium tungstate crystal and preparation method thereof
09/23/2009CN101538738A Secondary growth method for high-quality ZnO single-crystal thick films on sapphire substrates
09/23/2009CN101538737A Method for growing high-crystal-quality ZnO nano-rods by utilizing p-type doped silicon substrates
09/23/2009CN101538736A Dendritic golden nanophase material and preparation method thereof
09/23/2009CN101538735A Nano or micron-scale gold disk and preparation method thereof
09/23/2009CN101538734A Method for growing Zn(1-x)MgxO crystal thin film on Si substrate
09/23/2009CN101538042A Polycrystalline silicon reactor
09/23/2009CN101538029A Preparation method of crystallization II-type ammonium polyphosphate with high degree of polymerization
09/23/2009CN101537485A Thin shell floating method for manufacturing single crystal casting and device thereof
09/23/2009CN101537484A Method for improving temperature distribution in process of single crystal casting solidification
09/23/2009CN100543197C Preparation method of hydroxyapatite crystal whisker with high length-diameter ratio
09/22/2009US7592039 Method for producing nanotube material and nanotube material
09/22/2009US7591908 Vapor deposition apparatus and vapor deposition method
09/17/2009WO2009113472A1 Graphene or graphite thin film, manufacturing method thereof, thin film structure and electronic device
09/17/2009WO2009113441A1 Silicon single crystal pull-up apparatus and process for producing silicon single crystal
09/17/2009WO2009112953A2 Perovskite-like structures
09/17/2009US20090233423 Method of manufacturing nitride semiconductor substrate
09/17/2009US20090233419 Optical device manufacturing method
09/16/2009EP2100990A1 Process for producing nitride semiconductor, crystal growth rate enhancement agent, nitride single crystal, wafer and device
09/16/2009EP2100660A1 Method for producing semiconductor granules
09/16/2009EP2100325A1 Water-based polishing slurry for polishing silicon carbide single crystal substrate, and polishing method for the same
09/16/2009EP2099956A2 Method for growing a crystalline composition comprising gallium nitride
09/16/2009EP2099955A1 Sapphire substrates and methods of making same
09/16/2009EP0835336B2 A device and a method for epitaxially growing objects by cvd
09/16/2009CN201309981Y Vacuum electron-beam melting furnace for purifying polysilicon
09/16/2009CN101535533A Process for producing group iii element nitride crystal
09/16/2009CN101533801A Optical device manufacturing method
09/16/2009CN101532179A Method for manufacturing silicon wafer on insulator
09/16/2009CN101532178A CdS nano line array preparation method based on flexible metal base plate
09/16/2009CN101532177A Method for preparing zinc sulfide quantum wire by using template method
09/16/2009CN101532176A Preparation method of polycrystal nano calcium aluminum oxide
09/16/2009CN101532175A Method for the annealing preparation of tantalum scandium acid plumbum-based ferroelectric film by two step method
09/16/2009CN101532174A Semiconductor wafer of single crystalline silicon and process for its manufacture
09/16/2009CN101532173A Rope support mechanism of single crystal furnace
09/16/2009CN101532172A Thermal device for growing silicon monocrystal
09/16/2009CN101532171A Induction heating coil and method for melting granules composed of semiconductor material
09/16/2009CN101532169A Method for hydrothermally synthesizing Alpha-iron oxide red nanocrystalline
09/16/2009CN101531366A Method for cleaning polycrystalline silicon material
09/16/2009CN101531349A Preparation method of disk hexagonal boron nitride polycrystalline fine powder
09/16/2009CN101531038A Method for growing zinc oxide crystal whisker on surface of carbon fiber and fabric thereof
09/16/2009CN101530923A Method for preparing Fe-Ni-Pt alloy nanorod
09/16/2009CN100540755C Garnet laser crystal containing scandium of high efficiency antiradiation Yb3+ sensitizing Er3+ and its preparation method
09/15/2009US7589358 high quality nitride phosphor substrate manufactured by crystallization from supercritical ammonia-containing solution; light emitting devices; wavelength distribution emitting a white light and a good yield