Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
04/2010
04/01/2010DE112008000279T5 Verfahren zur Herstellung von Gruppe III-V-Verbindungshalbleitern A process for the production of group III-V compound semiconductors
03/2010
03/31/2010EP2168934A1 Sintered silicon wafer
03/31/2010EP2168917A1 Microspheres of silicon and photonic sponges, method for production and uses thereof in the manufacture of photonic devices
03/31/2010EP2168646A1 Method of loading a crystallization device
03/31/2010EP2167709A1 Assemblies of anisotropic nanoparticles
03/31/2010EP2167701A1 Method for providing a crystalline germanium layer on a substrate
03/31/2010CN101688326A ZnO-based substrate and method for processing the same
03/31/2010CN101688325A Mg-containing Zno mixed single crystal, laminate thereof and their production methods
03/31/2010CN101688324A Method and apparatus for growing a ribbon crystal with localized cooling
03/31/2010CN101688322A Wafer/ribbon crystal method and apparatus
03/31/2010CN101688298A Method and device for preparing a multilayered coating on a substrate
03/31/2010CN101688117A Single crystal scintillator material and method for producing the same
03/31/2010CN101687277A Method for joining silicon base materials, liquid droplet delivery head, liquid droplet delivery apparatus, and electronic device
03/31/2010CN101687276A Method for joining silicon base materials, liquid droplet delivery head, liquid droplet delivery apparatus, and electronic device
03/31/2010CN101684570A Method for preparing calcium carbonate crystal whisker with controllable shape
03/31/2010CN101684569A Method and device for growing potassium dihydrogen phosphate single crystal
03/31/2010CN101684549A Method for manufacturing nitride semiconductor device
03/31/2010CN101683688A Unidirectionally-solidification process and castings formed thereby
03/30/2010US7687827 III-nitride materials including low dislocation densities and methods associated with the same
03/30/2010US7687824 Method of improving surface flatness of group-III nitride crystal, substrate for epitaxial growth, and semiconductor device
03/30/2010US7687382 Method of making group III nitride-based compound semiconductor
03/30/2010US7686887 Quartz glass crucible for pulling up silicon single crystal and method for producing the same
03/25/2010WO2010033885A1 Directional solidification furnace for reducing melt contamination and reducing wafer contamination
03/25/2010WO2010033575A2 Abrasive particles having a unique morphology
03/25/2010WO2010033304A2 Solar cells fabricated by using cvd epitaxial si films on metallurgical-grade si wafers
03/25/2010WO2010032085A1 Method for growing synthetic crystals
03/25/2010CA2736805A1 Abrasive particles having a unique morphology
03/24/2010EP2166133A1 Metal casting
03/24/2010EP2165745A1 Hydrodynamic cavitation crystallization device
03/24/2010CN201428008Y Chemical vapor deposition device for polysilicon
03/24/2010CN101681831A High-strength columnar crystal silicon and plasma etching device part formed by high-strength columnar crystal silicon
03/24/2010CN101680115A Defect reduction in seeded aluminum nitride crystal growth
03/24/2010CN101680114A Method for manufacturing gan-based nitride semiconductor self-supporting substrate
03/24/2010CN101680113A Method for producing SiC single crystal
03/24/2010CN101680112A Guided diameter sic sublimation growth with multi-layer growth guide
03/24/2010CN101680111A Method and apparatus for manufacturing silicon ingot
03/24/2010CN101680110A Device and process for producing poly-crystalline or multi-crystalline silicon
03/24/2010CN101680108A Method and apparatus for producing a single crystal
03/24/2010CN101680107A Method for restructuring semiconductor layers
03/24/2010CN101679040A Method to produce light-emitting nano-particles of diamond
03/24/2010CN101676449A Crystal growth method of rare-earth sulfide with non-centrosymmetric structure
03/24/2010CN101676448A Erbium-doped yttrium barium lithium molybdate laser crystal and preparation method and application thereof
03/24/2010CN101676447A Erbium-doped gadolinium barium lithium molybdate laser crystal and preparation method and application thereof
03/24/2010CN101676446A Neodymium-doped lanthanum barium lithium molybdate laser crystal and preparation method and application thereof
03/24/2010CN101676445A Neodymium-doped gadolinium barium lithium tungstate laser crystal and preparation method and application thereof
03/24/2010CN101676444A Erbium ytterbium co-doped lithium gadolinium molybdate laser crystal and preparation method and application thereof
03/24/2010CN101676443A Neodymium-doped cesium lanthanum tungstate laser crystal and preparation method and application thereof
03/24/2010CN101676442A Non-linear optical crystal molybdenum silver selenite, preparation method and usage thereof
03/24/2010CN101676441A Single-layer beta phase nickel hydroxide two dimensional nano single chip and synthesizing method thereof
03/24/2010CN101676216A Potassium stibium zincate compound, single crystalloid, preparation method and usage thereof
03/24/2010CN101676208A Co-production technology of sodium silicate and gypsum whisker with mirabilite method
03/24/2010CN101676205A Co-production technology of sodium silicate, sodium bisulfite and gypsum whisker with mirabilite method
03/24/2010CN100595353C Fault handling process for temperature-controlling thermal couple of polysilicon ingot furnace
03/24/2010CN100595352C Method for preparing big ingot of polysilicon in level of solar energy
03/24/2010CN100595351C Interstitial atoms based silicon with low defect density
03/24/2010CN100595303C Method of manufacturing single-phase Sm2Co17 nanocrystalline block body material
03/23/2010US7683457 Group I-VII semiconductor single crystal thin film and process for producing same
03/23/2010US7682527 Fabrication of light emitting film coated fullerenes and their application for in-vivo light emission
03/18/2010WO2010029894A1 High-purity crystalline silicon, high-purity silicon tetrachloride, and processes for producing same
03/18/2010US20100068381 Chemical vapor deposition reactor having multiple inlets
03/18/2010US20100067087 Treatment of crystals for the prevention of optical damage
03/18/2010US20100066388 Epitaxial soot sensor
03/17/2010EP2162572A1 Method and apparatus for growing a ribbon crystal with localized cooling
03/17/2010CN101671848A Preparation method of high length-diameter ratio anhydrous calcium sulfate whisker
03/17/2010CN101671847A Two-step synthetic method of chalcogenide polycrystalline raw material
03/17/2010CN101671846A Method for reducing stress of cubic boron nitride thin film
03/17/2010CN101671845A Y, Sc, Gd and La silicate mischcrystal doped with Yb, lanthanum silicate crystal and melt method growth method thereof
03/17/2010CN101671844A Ca, Mg, Zr, Gd and Ga garnet doped with Sm and melt method crystal growth method thereof
03/17/2010CN101671843A Semiconductor wafer composed of monocrystalline silicon and method for producing
03/17/2010CN101671842A Method for growing Na-N co-doping p-type ZnO crystal film by annealing
03/17/2010CN101671815A Method for preparing lance-shaped ZnO nano/micron structure based on CVD method
03/17/2010CN101671025A Process for preparing polysilicon for P-type solar cell
03/16/2010CA2411606C Preparation method of a coating of gallium nitride
03/11/2010WO2010028103A2 String with refractory metal core for string ribbon crystal growth
03/11/2010WO2010027833A1 System and method for liquid silicon containment
03/11/2010WO2010027702A1 High temperature support apparatus and method of use for casting materials
03/11/2010WO2010027698A1 Apparatus and method of use for casting system with independent melting and solidification
03/11/2010WO2010027044A1 Substrate, substrate provided with epitaxial layer and methods for manufacturing the substrates
03/11/2010WO2010009325A3 Growth of semi-polar (11-22) or (10-13) gallium nitride with hydride vapor phase epitaxy
03/11/2010US20100059717 GaN CRYSTAL PRODUCING METHOD, GaN CRYSTAL, GaN CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE AND GaN CRYSTAL PRODUCING APPARATUS
03/11/2010DE19581483B4 Verfahren und Vorrichtung zur Bildung von Dünnschichten Method and apparatus for formation of thin films
03/11/2010DE102008060372A1 Method for producing a silicon carbide-epitaxial layer on a single crystalline silicon carbide substrate by chemical gas phase deposition
03/11/2010DE102008046617A1 Halbleiterscheibe aus einkristallinem Silizium und Verfahren für deren Herstellung Semiconductor wafer made of monocrystalline silicon and methods for their preparation
03/10/2010CN201420112Y Grower of SiC monocrystals
03/10/2010CN101665984A Copper zinc alloy nanowire and preparation method thereof
03/10/2010CN101665983A Zinc selenide single crystal growing method and zinc selenide single crystal growing container
03/10/2010CN101665982A Growth method of scorched yttrium silicate scintillation single crystal by means of floating zone
03/10/2010CN101665981A Preparation method of single-domain Gd-Ba-Cu-O superconducting block
03/10/2010CN101665980A Infiltration method for preparing single-domain Gd-Ba-Cu-O superconducting block
03/10/2010CN101665979A KCl crystalline material containing CuCl and preparation method thereof
03/10/2010CN100593591C Growth of colorless silicon carbide crystal
03/10/2010CN100593590C Synthesis method for producing potassium titanate series crystal whisker and titanium dioxide crystal whisker products
03/09/2010US7674737 Optical medium, an optical lens and a prism
03/09/2010US7674699 III group nitride semiconductor substrate, substrate for group III nitride semiconductor device, and fabrication methods thereof
03/09/2010US7674334 Artificial corundum crystal
03/04/2010WO2010025397A2 Directional solidification of silicon by electric induction susceptor heating in a controlled environment
03/04/2010WO2010025163A1 Apparatus and method of direct electric melting a feedstock
03/04/2010WO2010024392A1 Manufacturing method for silicon carbide monocrystals
03/04/2010WO2010024390A1 METHOD AND APPARATUS FOR MANUFACTURING SiC SINGLE CRYSTAL FILM
03/04/2010WO2010024285A1 Method for manufacturing nitride substrate, and nitride substrate
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