Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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08/26/2009 | CN101514486A Cu dendritic single crystalline nano material and preparation method thereof |
08/26/2009 | CN101514485A Method and device for preparing silicon crystal with lower oxygen content |
08/26/2009 | CN101514484A Porous material substrate used in GaN film grown by HVPE method and method thereof |
08/26/2009 | CN101514483A Method for preparing AlxGa(1-x)N triplet alloy semiconductor film at normal temperature |
08/26/2009 | CN101514482A A ZnS monocrystal nanowire growing method |
08/26/2009 | CN101514481A Method for growing a BaAlBO3F2 crystal by fusing agent |
08/26/2009 | CN101514480A Method for preparing white needle-shaped six-edge mono-crystalline nano-zinc oxide |
08/26/2009 | CN101514479A Large size hydrate potassium borate nonlinear optical crystal, preparation and use thereof |
08/26/2009 | CN101514471A Method for preparing TiO2 nanotube array film |
08/26/2009 | CN100533798C Piezoelectric thin film manufacture method |
08/26/2009 | CN100532658C Method for producing semiconductor crystal |
08/25/2009 | US7579086 Has base member and organic molecular film on surface of base member; film having non-affinity to liquid to be crystallized, and being bound to surface of base member via covalent bond; used to crystallize polymeric compounds including biomolecules such as proteins, nucleic acids; combinatorial chemistry |
08/25/2009 | CA2543950C Single crystal gan substrate, method of growing same and method of producing same |
08/25/2009 | CA2412853C Single crystal diamond prepared by cvd |
08/20/2009 | WO2009102033A1 Substrate for epitaxial growth, process for producing gan-base semiconductor film, gan-base semiconductor film, process for producing gan-base semiconductor luminescent element, and gan-base semiconductor luminescent element |
08/20/2009 | WO2009100694A1 Device and method for preparing crystalline bodies by directional solidification |
08/20/2009 | WO2008155673A8 Method for producing sic single crystal |
08/20/2009 | US20090210166 Method for predicting precipitation behavior of oxygen in silicon single crystal, method for determining production parameter of silicon single crystal, and storage medium for storing program for predicting precipitation behavior of oxygen in silicon single crystal |
08/20/2009 | DE10026319B4 Verfahren zum Herstellen einkristalliner Körper A method for producing monocrystalline body |
08/19/2009 | EP2090680A1 Sapphire substrate, nitride semiconductor luminescent element using the sapphire substrate, and method for manufacturing the nitride semiconductor luminescent element |
08/19/2009 | EP2089562A1 Reverse oxidation post-growth process for tailored gain profile in solid-state devices |
08/19/2009 | EP2089319A2 Method of purifying metallurgical silicon by directional solidification |
08/19/2009 | EP1043762B1 Polycrystalline silicon thin film forming method and thin film forming apparatus |
08/19/2009 | CN101511731A Process and apparatus for purifying low-grade silicon material |
08/19/2009 | CN101509146A Method of manufacturing group III nitride crystal |
08/19/2009 | CN101509145A Method for growing nonpolar a face GaN film on lithium aluminate substrate |
08/19/2009 | CN101509144A Method for improving nonpolar a face GaN film quality on lithium aluminate substrate |
08/19/2009 | CN101509143A Semiconductor sheets and methods for fabricating the same |
08/19/2009 | CN101509123A Method for producing small-sized tin indium oxide nano-wire material in low-temperature |
08/19/2009 | CN101508590A Crucible pot coating for polysilicon casting ingot and preparation method |
08/19/2009 | CN100530552C Functional device and method for forming oxide material |
08/19/2009 | CN100529199C Class-1 piezoelectric monocrystal and growing method thereof |
08/19/2009 | CN100529197C Method and apparatus for growing silicon crystal by controlling melt-solid interface shape |
08/19/2009 | CN100528737C Vibrating and rolling process for making nanometer monocrystal structure |
08/18/2009 | USRE40871 Method of producing plasma display panel with protective layer of an alkaline earth oxide |
08/18/2009 | US7575946 Method for making compound semiconductor and method for making semiconductor device |
08/18/2009 | US7575777 Potassium niobate deposited body and method for manufacturing the same, piezoelectric thin film resonator, frequency filter, oscillator, electronic circuit, and electronic apparatus |
08/18/2009 | CA2548936C Silicon feedstock for solar cells |
08/13/2009 | WO2009100173A2 Demethylation and inactivation of protein phosphatase 2a |
08/13/2009 | WO2009099397A1 Forming glutathione-capped and metal-doped zinc selenide/zinc sulfide core-shell quantum dots in aqueous solution |
08/13/2009 | WO2009099233A1 Diamond uv sensor element and manufacturing method thereof, uv sensor device, diamond single crystal processing method |
08/13/2009 | WO2009099084A1 Quartz glass crucible |
08/13/2009 | WO2009098997A1 Process for producing silicon carbide single crystal |
08/13/2009 | WO2009098979A1 Iii nitride semiconductor epitaxial substrate and method for manufacturing the same |
08/13/2009 | WO2008090514A3 Diamond electronic devices and methods for their manufacture |
08/13/2009 | WO2008090513A3 Diamond electronic devices including a surface and methods for their manufacture |
08/13/2009 | DE112008000034T5 Verfahren zum Herstellen eines Einkristalls A method of manufacturing a single crystal |
08/13/2009 | DE112007002336T5 Vorrichtung und Verfahren zur Herstellung von Einkristallen Apparatus and method for producing single crystals |
08/12/2009 | EP2087525A2 Hybrid solar cells with 3-dimensional hyperbranched nanocrystals |
08/12/2009 | EP1723455B1 Process for producing photonic crystals |
08/12/2009 | EP1485956A4 Process of producing multicrystalline silicon substrate and solar cell |
08/12/2009 | CN101506959A Method for producing zinc oxide semiconductor crystal |
08/12/2009 | CN101506947A Method for producing a doped III-N solid crystal and a free-standing doped III-N substrate, and doped III-N solid crystal and free-standing doped III-N substrate |
08/12/2009 | CN101503826A Preparation of AlN growth face composite substrate and nitride semiconductor device |
08/12/2009 | CN101503825A III group nitride single crystal and semiconductor device containing the same |
08/12/2009 | CN101503824A Nitride semiconductor single-crystal substrate and method of its synthesis |
08/12/2009 | CN101503823A Ytterbium-doped four-molybdenum potassium/sodium bismuth tungstate laser crystal, and growth method and use thereof |
08/12/2009 | CN101503822A Preparation of rare earth barium copper oxygen superconduction bulk material under pure oxygen atmosphere |
08/12/2009 | CN101503821A Polysilicon crucible platform supporting device |
08/12/2009 | CN101503192A Method for preparing polysilicon by plasma purification casting integrated furnace |
08/12/2009 | CN100526523C Process for preparing conductive zinc oxide crystal whisker and special apparatus thereof |
08/12/2009 | CN100526522C Epitaxy strontium lead titanate film with LiNiO2 cushioning layer |
08/12/2009 | CN100526521C Beryllium fluoroborate non linear optical crystal and its growing method and use |
08/11/2009 | US7572669 orienting block copolymer films such as methyl methacrylate-styrene copolymer, and removing a component from the film to produce nanopores, that in turn, can be filled with materials such as cobalt to produce the arrays; simple, fast, and cost-effective; electronics, magnetics, optoelectronics |
08/06/2009 | WO2009096578A1 Method for producing group iii nitride-based compound semiconductor, wafer including group iii nitride-based compound semiconductor, and group iii nitride-based compound semiconductor device |
08/06/2009 | WO2009096530A1 ZnO SUBSTRATE, METHOD FOR PROCESSING ZnO SUBSTRATE, AND ZnO SEMICONDUCTOR DEVICE |
08/06/2009 | WO2009096270A1 AlN HETEROEPITAXIAL CRYSTAL, METHOD FOR PRODUCING THE SAME, BASE SUBSTRATE FOR GROUP III NITRIDE FILM USING THE CRYSTAL, LIGHT-EMITTING DEVICE, SURFACE ACOUSTIC WAVE DEVICE, AND SPUTTERING APPARATUS |
08/06/2009 | WO2009096125A1 Iii-group nitride single-crystal ingot, iii-group nitride single-crystal substrate, method for manufacturing iii-group nitride single-crystal ingot, and method for manufacturing iii-group nitride single-crystal substrate |
08/06/2009 | WO2009096123A1 METHOD FOR GROWING AlxGa1-xN SINGLE CRYSTAL |
08/06/2009 | WO2009095764A1 Method for growing p-type sic semiconductor single crystal and p-type sic semiconductor single crystal |
08/06/2009 | US20090197399 Method of growing group iii-v compound semiconductor, and method of manufacturing light-emitting device and electron device |
08/06/2009 | US20090197118 Method for producing Group III nitride-based compound semiconductor, wafer, and Group III nitride-based compound semiconductor device |
08/05/2009 | EP2086003A2 Method of growing group III-V compound semiconductor, and method of manufacturing light-emitting device and electronic device |
08/05/2009 | EP2084304A2 Gallium trichloride injection scheme |
08/05/2009 | EP2083935A2 Abatement of reaction gases from gallium nitride deposition |
08/05/2009 | CN101501822A GaxIn1-xN substrate and GaxIn1-xN substrate cleaning method |
08/05/2009 | CN101499614A Erbium and ytterbium codoping NaLa(WO4)2 novel tunable laser crystal |
08/05/2009 | CN101499416A Method of growing group III-V compound semiconductor, and method of manufacturing light-emitting device and electronic device |
08/05/2009 | CN101499415A Method for producing group III nitride-based compound semiconductor, wafer, and group III nitride-based compound semiconductor device |
08/05/2009 | CN101498054A Method for preparing large size yttrium system block material with YbBCO as solder by brazing method |
08/05/2009 | CN101498052A Grammite raphioid fibre crystal-nano calcium carbonate micro-nano composite powder material and production method |
08/05/2009 | CN101498051A Preparation of zinc oxide nano-wire array |
08/05/2009 | CN101498050A Preparation of nickel zinc alloy nano-wire array material |
08/05/2009 | CN101498049A Method for preparing mullite crystal whisker by non-hydrolytic sol-gel process |
08/05/2009 | CN101498048A Method for preparing quasi nucleocapsid structure near-infrared nanocrystalline by one step |
08/05/2009 | CN101498047A Gallium arsenide polycrystal non-liquid seal synthesizing method and apparatus |
08/05/2009 | CN101498046A Neodymium strontium molybdate doped tunable laser crystal |
08/05/2009 | CN101498045A Ytterbium strontium molybdate doped tunable laser crystal |
08/05/2009 | CN101498044A Neodymium boron lanthanum molybdate doped laser crystal and preparation thereof |
08/05/2009 | CN101498043A Thulium strontium molybdate doped tunable laser crystal |
08/05/2009 | CN101498042A Resistance variable oxide material Co3O4 thin film, preparation and use thereof |
08/05/2009 | CN101498041A Preparation of magnesia crystal whisker |
08/05/2009 | CN101498040A K3B6O10 Br nonlinear optical crystal, preparation and use |
08/05/2009 | CN101498039A Gradient cooling lifting mechanism for polysilicon casting ingot |
08/05/2009 | CN101498038A Long crystal furnace with improved heating structure |
08/05/2009 | CN101498037A Method for preparing single crystal silver nano-wire by plant biomass reduction |
08/05/2009 | CN101498034A Preparation of transient metal doped nano zinc oxide crystal whisker |
08/05/2009 | CN101498033A Method for crystal crushed aggregate drawing silicon core and simple apparatus |
08/05/2009 | CN101498031A Crystal preparation and crystal prepared thereby |
08/05/2009 | CN101497067A Preparation method for assembling large-area ordered microsphere template by liquid level swirl method |