Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
05/2009
05/20/2009CN101437988A Method for manufacturing Si single crystal ingot by CZ method
05/20/2009CN101435110A Preparation of germanium three-dimensional photonic crystal
05/20/2009CN101435109A Growth method for fluxing medium of boron phosphate single crystal
05/20/2009CN101435108A Large size nonlinear optical crystal lead bromoborate, and preparation and use thereof
05/20/2009CN101435107A Method for growing silicon ingot
05/20/2009CN101435106A Production process and apparatus for monocrystalline silicon rod
05/20/2009CN101435105A Preparation of low oxygen content silicon crystal
05/20/2009CN101435104A Method for calibrating position of manipulator on film deposition machine station according to silicon nitride film stress
05/20/2009CN100490126C Semiconductor wafer and process for producing a semiconductor wafer
05/20/2009CN100489163C Method for raising purity of gold Nano bar
05/20/2009CN100489162C Falling crucible method growth process for lead molybdate single crystal
05/19/2009US7535082 Nitride semiconductor wafer and method of processing nitride semiconductor wafer
05/19/2009US7534631 Apparatus for measuring semiconductor physical characteristics
05/19/2009US7534412 Large-volume CaF2 single crystals with reduced scattering and improved laser stability, and uses thereof
05/19/2009US7534360 Method of making diamond product and diamond product
05/19/2009US7534310 Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate
05/16/2009CA2643960A1 Mbe device and method for the operation thereof
05/14/2009WO2009061599A1 Methods of selectively depositing silicon-containing films
05/14/2009WO2009060973A1 Needle diamond, cantilever using the diamond, and photomask-correcting or cell-operating probe
05/14/2009WO2009060561A1 Single crystal growing apparatus
05/14/2009WO2009042363A3 Faceted ceramic fibers, tapes or ribbons and epitaxial devices therefrom
05/14/2009CA2643861A1 Electrochemical composition having cocrystalline structure and process of preparing same
05/13/2009EP2058420A1 Silicon single crystal manufacturing method, silicon single crystal, silicon wafer, apparatus for controlling manufacture of silicon single crystal, and program
05/13/2009EP2058419A1 Method for separating surface layer or growth layer of diamond
05/13/2009EP2058279A1 Metallic silicon and process for producing the same
05/13/2009EP2057305A2 Crystal manufacturing
05/13/2009EP1974069B1 Symmetrical pulling of composite ribbons
05/13/2009CN201236221Y Gallium arsenide single crystal producing apparatus
05/13/2009CN201236220Y Polysilicon ingot furnace synchronous hoisting device
05/13/2009CN101432850A Method for manufacturing group 3-5 nitride semiconductor substrate
05/13/2009CN101432471A Method for manufacturing gallium nitride crystal and gallium nitride wafer
05/13/2009CN101432470A Method and apparatus for preparation of granular polysilicon
05/13/2009CN101429680A Production method for direct growth of one-dimensional nano cuprous oxide array on metallic copper substrate
05/13/2009CN101429679A Nano PbS film production method
05/13/2009CN101429678A Apparatus for producing group III element nitride semiconductor and method for producing the semiconductor
05/13/2009CN101429677A Polysilicon ingot furnace
05/13/2009CN101429676A Production method of Zintl phase monocrystal
05/13/2009CN101429673A Method for producing titanium dioxide nano pipe array by anodization method with aseptic
05/13/2009CN101428803A Method and apparatus for producing high purity polysilicon with high-purity metal silicon purification
05/13/2009CN101428776A Method for producing monodisperse rare earth doping phosphoric acid lanthanum fluorescence quantum point
05/13/2009CN100487856C Method for preparing IIB group semiconductor sulfide nano-material
05/13/2009CN100487172C Method for preparing dielectric crystal of calcium tungstate rapidly
05/13/2009CN100487171C Double-doped lithium niobate crystsal and method for making same
05/12/2009US7531679 Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitride
05/12/2009US7531472 Configured from numerous nanowires grown in a uniform direction, stem shaped cross-sectional configuration
05/12/2009US7531037 Device and method for forming macromolecule crystal
05/12/2009CA2463169C Method and device for fabricating semiconductor light emitting elements
05/12/2009CA2344342C Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride:silicon carbide alloy
05/07/2009WO2009058419A1 Device and method for high throughput screening of crystallization conditions in a vapor diffusion environment
05/07/2009US20090114924 Lightly doped silicon carbide wafer and use thereof in high power devices
05/07/2009US20090114887 Bulk, free-standing cubic III-N substrate and a method for forming same.
05/07/2009CA2704188A1 Device and method for high throughput screening of crystallization conditions in a vapor diffusion environment
05/06/2009EP2055814A1 Semiconductor substrate for epitaxial growth and process for producing the same
05/06/2009EP2055813A2 Device for manufacturing sic single crystal and method for the same
05/06/2009EP2055812A1 Semiconductor single crystal growth method having improvement in oxygen concentration characteristics
05/06/2009EP2055811A2 Nitride semiconductor substrate and method of manufacturing the same and field-effect transistor
05/06/2009CN201232028Y Polycrystalline silicon reducing furnace with adjustable air inlet pipe nozzle
05/06/2009CN101426966A Chemically attached diamondoids for CVD diamond film nucleation
05/06/2009CN101426965A Production of bulk single crystals of silicon carbide
05/06/2009CN101426723A Method and apparatus for treating silicon particle
05/06/2009CN101425658A Laser diode expitaxial wafer and method for producing same
05/06/2009CN101425484A Nitride semiconductor free-standing substrateand device using the same
05/06/2009CN101423979A Nanocrystal for two-phase coexistent of barium titanate and ferrate and preparation method thereof
05/06/2009CN101423978A Ge doped vertical pulling silicon chip with high mechanical strength and preparation method thereof
05/06/2009CN101423220A Method for purifying and ingot casting multi-temperature zones silicon material and apparatus thereof
05/06/2009CN101423219A Polycrystalline silicon purification or silicon liquid leakage defense device of ingot furnace
05/06/2009CN100485867C Epitaxial growth of lanthanum aluminate film material on silicon substrate and preparation method
05/05/2009US7527869 Semiconductor devices such as light-emitting diodes, power devices, high-frequency devices, and environment-resistant devices; having i very thin metallic Si melt between monocrystal and polycrystal SiC substrates
05/05/2009US7527690 Ferroelectric ceramic compound, a ferroelectric ceramic single crystal, and preparation processes thereof
04/2009
04/30/2009WO2009055405A1 Scintillator crystals and methods of forming
04/30/2009WO2009054529A1 Quartz glass crucible, method for manufacturing quartz glass crucible and application of quartz glass crucible
04/30/2009WO2009052770A1 Method for reducing macrodefects in the production of single-crystal or monocrystalline layers
04/30/2009US20090108407 Oxygen-doped n-type gallium nitride freestanding single crystal substrate
04/30/2009US20090108232 Lens material, optical electronic component and optical electronic device
04/30/2009DE112006002850T5 Vorrichtung und Verfahren zur Herstellung von Halbleitereinkristallen Device and method for the production of semiconductor single crystals
04/29/2009EP2052101A1 Method and apparatus for preparation of granular polysilicon
04/29/2009EP2051936A2 Method for generating oxidic nanoparticles from a material forming oxide particles
04/29/2009EP1563530A4 Fabrication of light emitting film coated fullerenes and their application for in-vivo light emission
04/29/2009CN101421443A Process for producing group iii nitride crystal, group iii nitride crystal substrate, and group iii nitride semiconductor device
04/29/2009CN101421442A Process for producing SiC single crystal
04/29/2009CN101418469A Group iii nitride semiconductor manufacturing system
04/29/2009CN101418468A Apparatus for growing lithium aluminate crystal by czochralski method
04/29/2009CN101418467A Method for preparing silicon nano crystal by using electron-beam evaporation equipment
04/29/2009CN101418465A Hvpe showerhead design
04/29/2009CN101418036A Rapid purification of gamma trichosanthin and crystallization technology thereof
04/29/2009CN101417803A Method for cooling polycrystalline silicon hydrogen reducing furnace outlet duct by air
04/29/2009CN101417802A Method for mixing chlorosilane and hydrogen in polycrystalline silicon production
04/29/2009CN100483739C Semi-insulating silicon carbide without vanadium domination
04/29/2009CN100482868C Method for making monocrystal silicon and wafer by controlling pulling-speed distribution and products thereof
04/28/2009US7524375 Growth of uniform crystals
04/28/2009US7524373 Apparatus and semiconductor co-crystal
04/28/2009US7524372 Method for manufacturing diamond single crystal substrate
04/28/2009US7524370 Nanostructure and manufacturing method for same
04/28/2009CA2398632C Photonic bandgap materials based on silicon
04/28/2009CA2380145C Growth of bulk single crystals of aluminum
04/23/2009WO2009051076A1 Process for production of dispersion of fluorinated nano diamond
04/23/2009WO2009049477A1 Process and apparatus for producing polysilicon sheets
04/23/2009US20090104758 Gallium nitride materials and methods
04/23/2009US20090101491 Methods and apparatus for rapid crystallization of biomolecules
04/23/2009US20090101063 Method of Manufacturing GaN Crystal Substrate