| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
|---|
| 12/30/2009 | EP2138610A1 Method and apparatus for manufacturing silicon ingot |
| 12/30/2009 | EP2137761A1 Method of depositing materials on a non-planar surface |
| 12/30/2009 | EP2137107A1 Preparation method of nanodiamond and nanocarbon with the same atomic ratio of hydrogen and halogen among the chemical compound of carbon,hydrogen and halogen by dehydrohalogenation and their production |
| 12/30/2009 | EP1599621B1 Wear component comprising single crystal cvd diamond |
| 12/30/2009 | EP1444390B1 Apparatus and method for diamond production |
| 12/30/2009 | EP1404904B1 Production method of alpha-sic wafer |
| 12/30/2009 | CN201372205Y Polysilicon purification device |
| 12/30/2009 | CN201372204Y Silicon-core clamping device for polysilicon reducing furnace |
| 12/30/2009 | CN101613883A U-type conjugated molecule single crystal and preparation method thereof |
| 12/30/2009 | CN101613882A Method for preparing bismuth sulfide nano-rod crystalline material |
| 12/30/2009 | CN101613881A Method for preparing SiC nanowire array |
| 12/30/2009 | CN101613880A Method for preparing lanthanum aluminate film by radiofrequency magnetron sputtering |
| 12/30/2009 | CN101613879A Method for preparing magnesia crystal whisker by carnallite |
| 12/30/2009 | CN101613878A Method of applying silicon powder in single crystal furnace or polycrystalline furnace |
| 12/30/2009 | CN101613877A Application of raw material silicon briquette with good packing performance in single crystal furnace or polycrystalline furnace |
| 12/30/2009 | CN100576533C 半导体器件 Semiconductor devices |
| 12/30/2009 | CN100576449C Method for manufacturing compound semiconductor epitaxial substrate |
| 12/30/2009 | CN100576370C Method of producing biaxially textured buffer layers and related articles, devices and systems |
| 12/30/2009 | CN100575843C Polycrystalline silicon reducing furnace water-cooling double glass viewing mirror |
| 12/30/2009 | CN100575566C Growing method of carbon-doped sapphire crystal by EFG method |
| 12/30/2009 | CN100575565C Method for preparing aluminum nitride thin film on lithium aluminate wafer surface under low temperature |
| 12/30/2009 | CN100575254C Edulcoration method for boiler bottom material generated from silicon monocrystal growth by czochralski process |
| 12/29/2009 | US7637998 Method for producing single crystal silicon carbide |
| 12/29/2009 | CA2491964C Single crystalline structure material having low material absorption and fabrication method therefor |
| 12/24/2009 | US20090314210 Epitaxial growth susceptor |
| 12/23/2009 | WO2009153116A2 Diamond nano-tip and method for production thereof |
| 12/23/2009 | EP2135979A1 Method for manufacturing nitride single crystal |
| 12/23/2009 | EP2135978A1 Mg-CONTAINING ZnO MIXED SINGLE CRYSTAL, LAMINATE THEREOF AND THEIR PRODUCTION METHODS |
| 12/23/2009 | EP2135977A2 Diamond composite substrate and a method for manufacturing same |
| 12/23/2009 | EP2134643A2 Synthesis of uniform nanoparticle shapes with high selectivity |
| 12/23/2009 | EP1664397B1 Growth of ulta-high purity silicon carbide crystals in an ambient containing hydrogen |
| 12/23/2009 | CN201367495Y Medium-pressure cold-wall semi-insulating gallium arsenide single crystal growing furnace |
| 12/23/2009 | CN101611178A Method for manufacturing nitride single crystal |
| 12/23/2009 | CN101608342A Method for processing lithium niobate or lithium tantalate wafer |
| 12/23/2009 | CN101608341A Dendritic silver palladium alloy single crystal nano-structure array and preparation method thereof |
| 12/23/2009 | CN101608340A Iron-based high-temperature superconductive crystal and preparation method thereof |
| 12/23/2009 | CN101608339A Method for 4H-SiC selective homoepitaxy growth |
| 12/23/2009 | CN101607735A Zinc oxide and titanium dioxide composite film material and preparation method thereof |
| 12/23/2009 | CN100572618C Solvent thermal synthesis method for CNx nano-belt and nano-tube |
| 12/23/2009 | CN100572617C Lanthanum titanates single-crystal upgrowth technology |
| 12/23/2009 | CN100572616C Method for manufacturing high quality aluminum oxide photon crystal |
| 12/23/2009 | CN100572615C Alkali metal borate compounds, single-crystal and preparation method thereof |
| 12/23/2009 | CN100572614C Device and method for producing a single crystal |
| 12/23/2009 | CN100572589C Manufacturing method of polycrystal film and manufacturing method of oxide superconductor |
| 12/22/2009 | US7635868 Silicon carbide epitaxial wafer, method for producing such wafer, and semiconductor device formed on such wafer |
| 12/22/2009 | US7635414 System for continuous growing of monocrystalline silicon |
| 12/22/2009 | CA2385621C Method and apparatus for growing silicon carbide crystals |
| 12/17/2009 | WO2009152503A2 Methods for epitaxial growth of low defect materials |
| 12/17/2009 | WO2009151642A1 Method for testing group-iii nitride wafers and group iii-nitride wafers with test data |
| 12/17/2009 | WO2009151160A1 Method for manufacturing the color controlled sappire |
| 12/17/2009 | WO2009150549A2 Microfluidic devices and methods for proteins crystallization and in situ x-ray diffraction |
| 12/17/2009 | WO2009118353A3 Metallic nanocrystal encapsulation |
| 12/16/2009 | EP2133450A1 Substrate for epitaxial growth and method for producing nitride compound semiconductor single crystal |
| 12/16/2009 | EP2133449A1 Iodide single crystal, method for production the iodide single crystal, and scintillator comprising the iodide single crystal |
| 12/16/2009 | EP2132769A1 Method of making a solar grade silicon wafer |
| 12/16/2009 | EP2132366A2 Device and method for producing self-sustained plates of silicon or other crystalline materials |
| 12/16/2009 | EP2132365A2 Gallium nitride crystal |
| 12/16/2009 | EP2132142A2 A process for the synthesis of nanotubes and fullerene-like nanostructures of transition metals dichalcogenides, quasi one-dimensional structures of transition metals and oxides of transition metals |
| 12/16/2009 | EP2132013A1 Thin metal nanowires produced by biotemplating |
| 12/16/2009 | CN201362757Y Volatilizer and control system of trichlorosilane vaporization device for producing polysilicon |
| 12/16/2009 | CN201362597Y Polysilicon reduction furnace |
| 12/16/2009 | CN201362596Y Monocrystalline silicon or polysilicon continuous purifying reaction and processing device in silica ore |
| 12/16/2009 | CN101605930A N-type conductive aluminum nitride semiconductor crystal and method for producing the same |
| 12/16/2009 | CN101605918A Polycrystalline diamond (PCD) materials |
| 12/16/2009 | CN101603208A Silica tube for growing semi-insulated gallium arsenide and method for doping carbon in gallium arsenide |
| 12/16/2009 | CN101603207A Method for preparing network branched silicon nitride single crystal nanostructure with high purity and high yield |
| 12/16/2009 | CN101603206A Method for preparing Cr, Nd:YVO4 crystal and Cr, Nd:YVO4 crystal |
| 12/16/2009 | CN101603205A Carbon-doped yttrium aluminium garnet crystal and two-step preparation method thereof |
| 12/16/2009 | CN101603204A Thermoluminescent or photoluminescent dosimetry crystal and preparation method thereof |
| 12/16/2009 | CN101603203A Lithium metaborate octo-hydrate nonlinear optical crystal, preparation method thereof and application thereof |
| 12/16/2009 | CN101603202A Method for processing seed crystal capable of showing characteristic structure and shape of quartz crystal |
| 12/16/2009 | CN101603201A Method for depositing polysilicon in furnace tube |
| 12/16/2009 | CN101603200A Preparation method of tungsten crystal whisker array with controllable diameter and length |
| 12/16/2009 | CN101603199A Method for growing p-type ZnO crystal film by codoping Li and Na |
| 12/16/2009 | CN101602512A Zirconium phosphate crystal material and method for preparing same |
| 12/16/2009 | CN101602506A Production method and production equipment for high-purity polysilicon |
| 12/16/2009 | CN101602505A Crucible support for preventing silicone fluid leakage flow in field of polysilicon production |
| 12/16/2009 | CN101602503A Method for graphene epitaxial growth on 4H-SiC silicon surface |
| 12/16/2009 | CN101602496A Synchronic preparation method of lead telluride thin film and nano powder |
| 12/16/2009 | CN101602495A Preparation method of lead telluride nano crystal and micron crystal |
| 12/16/2009 | CN100570912C III-V semiconductor core-heteroshell nanocrystals |
| 12/16/2009 | CN100570021C Method for purifying polysilicon, and solidification device |
| 12/16/2009 | CN100570020C Germanium-doped directional solidification casting polycrystalline silicon |
| 12/16/2009 | CN100570019C Method for preparing high water soluble nano carbon tube grafted by super branched polymer |
| 12/16/2009 | CN100569645C High length-diameter ratio magnesium borate whisker synthesis method |
| 12/15/2009 | US7632742 Substrate for growing Pendeo epitaxy and method of forming the same |
| 12/15/2009 | US7632697 Nitride semiconductor thin film and method for growing the same |
| 12/10/2009 | WO2009149300A1 High-pressure vessel for growing group iii nitride crystals and method of growing group iii nitride crystals using high-pressure vessel and group iii nitride crystal |
| 12/10/2009 | WO2009149299A1 Methods for producing improved crystallinty group iii-nitride crystals from initial group iii-nitride seed by ammonothermal growth |
| 12/10/2009 | WO2009148726A1 High thermal gradient casting with tight packing of directionally solidified casting |
| 12/10/2009 | WO2009148075A1 Method for manufacturing iii nitride semiconductor light emitting element, iii nitride semiconductor light emitting element and lamp |
| 12/10/2009 | WO2009147976A1 ALxGa(1-x)As SUBSTRATE, EPITAXIAL WAFER FOR INFRARED LED, INFRARED LED, METHOD FOR PRODUCTION OF ALxGa(1-x)As SUBSTRATE, METHOD FOR PRODUCTION OF EPITAXIAL WAFER FOR INFRARED LED, AND METHOD FOR PRODUCTION OF INFRARED LED |
| 12/10/2009 | WO2009147975A1 Alxga(1-x)as substrate, epitaxial wafer for infrared led, infrared led, method for production of alxga(1-x)as substrate, method for production of epitaxial wafer for infrared led, and method for production of infrared led |
| 12/10/2009 | WO2009147974A1 Alxga(1-x)as substrate, epitaxial wafer for infrared led, infrared led, method for production of alxga(1-x)as substrate, method for production of epitaxial wafer for infrared led, and method for production of infrared led |
| 12/10/2009 | WO2009146779A1 Stable crystal modifications of dopc |
| 12/10/2009 | US20090301564 Upon excitation, one carrier confined to core and other carrier confined to overcoating; band gaps; photovoltaic devices, photoconductors |
| 12/10/2009 | DE102008026784A1 Epitaxierte Siliciumscheibe mit <110>-Kristallorientierung und Verfahren zu ihrer Herstellung Epitaxial silicon wafer with <110> crystal orientation and process for their preparation |
| 12/10/2009 | CA2726871A1 Stable crystal modifications of dopc |
| 12/10/2009 | CA2724387A1 High thermal gradient casting with tight packing of directionally solidified casting |
| 12/09/2009 | EP2131398A1 Compound semiconductor laminate, process for producing the compound semiconductor laminate, and semiconductor device |