Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
03/2009
03/11/2009CN101381887A Single crystal boron nanotaper, method for preparing same and applications in electricity and field emission device
03/11/2009CN101381528A Gallium phthalocyanine crystal, production process thereof, photoreceptor and image forming apparatus
03/11/2009CN100468627C Method of producing a nitride semiconductor device and nitride semiconductor device
03/11/2009CN100468625C Methods of selective deposition of heavily doped epitaxial sige
03/11/2009CN100468104C Process for producing photonic crystals
03/11/2009CN100468102C Solution to thermal budget
03/11/2009CN100467679C Chromatic carbon silicon stone monocrystal and preparation method thereof and preparation of artificial gem
03/11/2009CN100467678C Hf:Er:LiNbO3 crystal and preparation method thereof
03/10/2009USRE40647 Method of producing plasma display panel with protective layer of an alkaline earth oxide
03/10/2009US7501330 Methods of forming a high conductivity diamond film and structures formed thereby
03/05/2009WO2009028974A1 Method for the production of semiconductor ribbons from a gaseous feedstock
03/05/2009WO2009028658A1 Silicon single crystal wafer for igbt, method for manufacturing silicon single crystal wafer for igbt and method for assuring resistivity of silicon single crystal wafer for igbt
03/05/2009WO2009028308A1 Diamond thin-film laminate
03/05/2009WO2009028273A1 Method for measuring liquid level in single crystal pulling apparatus employing cz method
03/05/2009WO2009027949A1 Polycrystalline diamond composites
03/05/2009WO2009027948A1 Ultrahard diamond composites
03/05/2009WO2008102358A3 Group-iii metal nitride and preparation thereof
03/05/2009WO2005080645A3 Diamond structure separation
03/05/2009US20090061091 Alumina layer with enhanced texture
03/05/2009CA2693506A1 Ultrahard diamond composites
03/05/2009CA2692216A1 Polycrystalline diamond composites
03/04/2009EP2031630A1 Plasma display panel and method for manufacturing the same
03/04/2009EP2031629A1 Plasma display panel and method for manufacturing the same
03/04/2009EP2031103A1 Method for manufacturing gallium nitride crystal and gallium nitride wafer
03/04/2009EP2031102A1 Method for preparing silica porous crystal
03/04/2009EP2031101A2 Method for making silicon wafers
03/04/2009EP2031100A1 Manufacturing method of single crystal
03/04/2009EP2030733A2 Method for making silicon wafers
03/04/2009EP2030225A2 Wet etch suitable for creating square cuts in si and resulting structures
03/04/2009EP2029799A2 Thermostable proteins and methods of making and using thereof
03/04/2009EP2029620A1 Ob fold domains
03/04/2009CN101379227A Crystalline composition, device, and associated method
03/04/2009CN101379226A A method of growing semiconductor heterostructures based on gallium nitride
03/04/2009CN101378989A High-pressure fluidized bed reactor for preparing granular polycrystalline silicon
03/04/2009CN101378174A Gadolinium gallium garnet novel laser crystal activated by erbium ion co-doped with sensitized ion
03/04/2009CN101378173A Chromium-doped molybdic acid aluminum rubidium tunable laser crystal, and preparation method and application thereof
03/04/2009CN101377020A Rare earth silicates polycrystal material doped with Ce<3+> and preparing method thereof
03/04/2009CN101377019A Novel scintillation crystal material NaY(WO4)2 doped with Ce<3+>
03/04/2009CN101377018A Novel scintillation crystal material NaLa(WO4)2 doped with Ce<3+>
03/04/2009CN101377017A Novel scintillation crystal material NaGd(WO4)2 doped with Ce<3+>
03/04/2009CN101377016A Calcium molybdate laser crystal doped with ytterbium ion and sodium ion and preparing method thereof
03/04/2009CN101377015A Novel 1.54 mu m waveband rare earth ion activated gadolinium gallium garnet laser crystal
03/04/2009CN101377014A Method for preparing large size lithium tetraborate piezoelectric crystal
03/04/2009CN101377013A Novel 1.54 mu m waveband rare earth ion activated yttrium oxide laser crystal
03/04/2009CN101377012A Luminescent crystal material NaTb(PO3)4 crystal
03/04/2009CN101377011A Tunable laser crystal material K2ZnCl4 doped with Ni<2+> of blue and green visible wavebands
03/04/2009CN101377010A Device and method for manufacturing solar grade polysilicon
03/04/2009CN101377008A 硅单晶提拉方法 Silicon single crystal pulling method
03/04/2009CN101377007A Silicon target manufacturing process
03/04/2009CN101376492A Preparation of transient metal chalcogenide compound
03/04/2009CN100466178C Method for producing group III nitride crystal, group III nitride crystal obtained by such method, and group III nitride substrate applying the group III nitride crystal
03/04/2009CN100465358C A preparation method of oil soluble nanometer titania lines
03/04/2009CN100465357C A manufacturing method of fluoride crystals
03/04/2009CN100465356C A GaN wafer with high surface quality and a production method thereof
03/03/2009US7498272 Method of depositing rare earth oxide thin films
03/03/2009US7498244 Method for fabricating GaN-based nitride layer
03/03/2009US7498059 Method for growing thin films
02/2009
02/26/2009WO2009026396A1 Methods for preparing semiconductor nanoparticles
02/26/2009WO2009026269A1 Stabilizing 4h polytype during sublimation growth of sic single crystals
02/26/2009WO2009025342A1 Silicon single crystal wafer for igbt and method for manufacturing silicon single crystal wafer for igbt
02/26/2009WO2009025341A1 Silicon single crystal wafer for igbt and method for manufacturing silicon single crystal wafer for igbt
02/26/2009WO2009025340A1 Silicon single crystal wafer for igbt and method for manufacturing silicon single crystal wafer for igbt
02/26/2009WO2009025339A1 Silicon single crystal wafer for igbt and method for manufacturing silicon single crystal wafer for igbt
02/26/2009WO2009025338A1 Silicon single crystal wafer for igbt and method for manufacturing silicon single crystal wafer for igbt
02/26/2009WO2009025337A1 Silicon single crystal wafer for igbt, process for producing silicon single crystal wafer for igbt, and method for ensuring electric resistivity of silicon single crystal wafer for igbt
02/26/2009WO2009025336A1 Silicon single crystal wafer for igbt and process for producing silicon single crystal wafer for igbt
02/26/2009WO2009023995A1 Crystal structure of cd147 extracellular region and use thereof
02/26/2009WO2007116315A8 Method of manufacturing a silicon carbide single crystal
02/26/2009US20090050913 Method for achieving low defect density algan single crystal boules
02/26/2009DE19882883B4 System für die chemische Abscheidung aus der Gasphase zum Herstellen polykristalliner Siliziumstangen System for chemical deposition from the gas phase polycrystalline silicon rods for manufacturing
02/26/2009DE112006001279T5 Mehrschichtensubstrat eines Nitridhalbleiters der Gruppe 3-5, Verfahren zur Herstellung eines freitragenden Substrats eines Nitridhalbleiters der Gruppe 3-5 und Halbleiterelement Multi-layer substrate of a nitride semiconductor of Group 3-5, method for producing a self-supporting substrate of a nitride semiconductor of the Group 3-5 and semiconductor element
02/25/2009EP2028682A1 Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process thereof
02/25/2009EP2028292A2 Method for manufacturing monocrystalline metal or semi-metal bodies
02/25/2009EP2027312A2 Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during cz growth
02/25/2009EP2027059A1 Method of manufacturing silicon nanotubes using doughnut-shaped catalytic metal layer
02/25/2009CN201198499Y Control plate for single side growth of optical quartz crystal
02/25/2009CN101372760A Preparation of glowing oxygen doped gallium arsenide polycrystalline film
02/25/2009CN101372328A Catalyst-spreading device in a device for producing carbon nanotubes
02/19/2009WO2009003079A3 Systems and methods for fabricating crystalline thin structures using meniscal growth techniques
02/19/2009WO2008146126A3 Reactor for growing crystals with cooled inlets
02/19/2009WO2007123711A3 Composite materials and devices comprising single crystal silicon carbide heated by electromagnetic radiation
02/19/2009WO2006052995A4 Method for producing crystals and screening crystallization conditions
02/19/2009US20090048114 Alloy superconductor and methods of making the same
02/19/2009US20090045398 MANUFACTURE METHOD FOR ZnO BASED COMPOUND SEMICONDUCTOR CRYSTAL AND ZnO BASED COMPOUND SEMICONDUCTOR SUBSTRATE
02/19/2009CA2684873A1 Anti-bacterial drug targeting of genome maintenance interfaces
02/18/2009EP2025780A2 Silicon release coating, method of making same, and method of using same
02/18/2009EP2025779A2 Gallium nitride crystal growth method, gallium nitride crystal substrate, epi-wafer manufacturing method, and epi-wafer
02/18/2009EP2024991A1 Method for producing a doped iii-n solid crystal and a free-standing doped iii-n substrate, and doped iii-n solid crystal and free-standing doped iii-n substrate
02/18/2009EP2024537A1 Method for producing silicon carbide single crystal
02/18/2009EP2024285A1 Method for purifying silicon
02/18/2009EP2024114A2 Sequential mold filling
02/18/2009EP1836332A4 Hydrodynamic cavitation crystallization device and process
02/18/2009EP1735403A4 Method and structure for non-linear optics
02/18/2009CN201195769Y Monocrystalline silicon furnace
02/18/2009CN201195768Y Decompression apparatus of polysilicon furnace
02/18/2009CN201195767Y Polysilicon ingot furnace
02/18/2009CN201195766Y Novel polysilicon furnace
02/18/2009CN201195765Y Flexible-axle monocrystalline silicon stove
02/18/2009CN201195764Y Polysilicon stove transmission device
02/18/2009CN201195763Y Polysilicon ingot furnace