| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
|---|
| 04/02/2009 | DE102005045339B4 Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers |
| 04/02/2009 | DE102005045338B4 Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers |
| 04/01/2009 | EP2041797A2 Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device |
| 04/01/2009 | CN201214631Y Polysilicon reduction furnace |
| 04/01/2009 | CN101400835A Method for continual preparation of polycrystalline silicon using a fluidized bed reactor |
| 04/01/2009 | CN101400834A Silicon single-crystal pullup apparatus |
| 04/01/2009 | CN101400833A Process for producing diamond single crystal with thin film and diamond single crystal with thin film |
| 04/01/2009 | CN101397694A Method for preparing crystal silicon film |
| 04/01/2009 | CN101397693A Method for high quality single crystal indium nitride film growth |
| 04/01/2009 | CN101396632A Multi-stage absorption, regeneration and purification method of polysilicon tail gas |
| 04/01/2009 | CN100474612C Methods for forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby |
| 04/01/2009 | CN100474523C Method for etching silicon carbide single crystal |
| 04/01/2009 | CN100474511C Gallium nitride crystal, homoepitaxial gallium-nitride-based devices and method for producing the same |
| 04/01/2009 | CN100473749C Heat treatment method for monocrystalline or directionally solidified structural components |
| 03/26/2009 | WO2008092421A3 Optical cleaning of crystals |
| 03/26/2009 | WO2004065294A3 Systems and methods for producing single-walled carbon nanotubes (swnts) on a substrate |
| 03/25/2009 | EP2039812A1 METHOD FOR GROWING AlxGa1-xN CRYSTAL, AND AlxGa1-xN CRYSTAL SUBSTRATE |
| 03/25/2009 | EP2039811A1 Silicon single crystal manufacturing system and silicon single crystal manufacturing method using the system |
| 03/25/2009 | EP2039653A2 Reactor for polycrystalline silicon and polycrystalline silicon production method |
| 03/25/2009 | EP2038456A2 High volume delivery system for gallium trichloride |
| 03/25/2009 | EP2038455A1 One hundred millimeter sic crystal grown on off-axis seed |
| 03/25/2009 | EP2038454A1 Method and crucible for direct solidification of semiconductor grade multi-crystalline silicon ingots |
| 03/25/2009 | EP2038229A1 Artificial quartz member, process for producing the same, and optical element comprising the same |
| 03/25/2009 | EP2000567A9 Method for growing iii nitride single crystal |
| 03/25/2009 | EP1587971B1 Method for producing large, single-crystals of aluminum nitride |
| 03/25/2009 | EP1516361B1 Method for producing semi-insulating resistivity in high purity silicon carbide crystals |
| 03/25/2009 | CN201212068Y Silicon block with guide bar |
| 03/25/2009 | CN101395305A Single crystal growing method |
| 03/25/2009 | CN101393851A Single crystal gan substrate and method of growing single crystal gan |
| 03/25/2009 | CN101392408A Reactor for polycrystalline silicon and polycrystalline silicon production method |
| 03/25/2009 | CN101392407A Method for preparing cylinder hollow macroporous ordered colloidal crystal |
| 03/25/2009 | CN101392406A Method for preparing solar energy polycrystalline silicon sheet |
| 03/25/2009 | CN101392405A High precision temperature control method and control system in germanium single crystal growth |
| 03/25/2009 | CN100472821C Group iii-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates |
| 03/25/2009 | CN100472715C Epitaxial growth process |
| 03/25/2009 | CN100472002C Reduction of carrot defects in silicon carbide epitaxy |
| 03/25/2009 | CN100472001C Silicon wafer, SOI substrate, silicon single crystal growing method, silicon wafer manufacturing method and SOI substrate manufacturing method |
| 03/25/2009 | CN100472000C Process for obtaining of bulk monocrystalline gallium-containing nitride |
| 03/24/2009 | US7507987 Method of making packets of nanostructures |
| 03/24/2009 | US7507292 Method for producing group III element nitride single crystal and group III element nitride transparent single crystal prepared thereby |
| 03/24/2009 | US7507291 Method and apparatus for growing multiple crystalline ribbons from a single crucible |
| 03/24/2009 | US7507290 Flux assisted solid phase epitaxy |
| 03/19/2009 | WO2009035095A1 EPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE |
| 03/19/2009 | WO2009035079A1 Compound semiconductor substrate, process for producing compound semiconductor substrate, and semiconductor device |
| 03/19/2009 | WO2009034825A1 Location measurement device in semiconductor single crystal manufacturing device, and location measurement method |
| 03/19/2009 | WO2009003714A3 Device and method for measuring static and dynamic scattered light in small volumes |
| 03/19/2009 | WO2008155673A3 Method for producing sic single crystal |
| 03/19/2009 | US20090076294 Controlled nucleation of solutes in solutions having net charge to promote crystal growth |
| 03/19/2009 | US20090074963 Oxide films, a method of producing the same and structures having the same |
| 03/19/2009 | US20090072239 Gallium oxide single crystal composite, process for producing the same, and process for producing nitride semiconductor film utilizing gallium oxide single crystal composite |
| 03/19/2009 | US20090071394 AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE AND METHOD OF PRODUCING AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE |
| 03/19/2009 | DE112005002674T5 Verfahren zum Reinigen von alkalischen Erdhalogeniden und Erdalkalihalogeniden für Kristallwachstum A method of purifying alkaline and alkaline earth halides for crystal growth Erdhalogeniden |
| 03/18/2009 | EP2037013A2 Method for preparing substrate for growing gallium nitride and method for preparing gallium nitride substrate |
| 03/18/2009 | EP2037012A1 PROCESS FOR PRODUCING SUBSTRATE OF AlN CRYSTAL, METHOD OF GROWING AlN CRYSTAL, AND SUBSTRATE OF AlN CRYSTAL |
| 03/18/2009 | EP2037011A1 Single crystal of nitride of group iii element and method of growing the same |
| 03/18/2009 | EP2037010A1 Method of converting PCA to sapphire and converted article |
| 03/18/2009 | EP2037009A2 Method for producing a bonded SOI wafer |
| 03/18/2009 | EP2037008A1 Solid-phase sheet growing substrate and solid-phase sheet manufacturing method |
| 03/18/2009 | EP2036859A2 Method for producing polycrystalline silicon |
| 03/18/2009 | EP2036117A1 Method of manufacturing silicon nanowires using silicon nanodot thin film |
| 03/18/2009 | EP2035604A1 Device and method for production of semiconductor grade silicon |
| 03/18/2009 | EP2035603A1 Method for the manufacturing of a nanorod |
| 03/18/2009 | CN101389790A Synthesis of alloyed nanocrystals in aqueous or water-soluble solvents |
| 03/18/2009 | CN101387010A Neodymium-dopping scandium silicate laser crystal and preparation method thereof |
| 03/18/2009 | CN101387009A Growing method of sapphire and titanium sapphire crystal |
| 03/18/2009 | CN101387008A Carbon nanotube growing apparatus |
| 03/18/2009 | CN101387007A Method for growing crystal under optimized temperature field |
| 03/18/2009 | CN101385960A Dynamic method for real time measurement of diamond single crystal growth |
| 03/18/2009 | CN100470725C Method to reduce stacking fault nucleation sites and reduce VF drift in bipolar devices |
| 03/18/2009 | CN100469953C Fluorosilicate crystal and its preparation method and use |
| 03/18/2009 | CN100469952C Laser crystal of Nd doped strontium gadolinium borate |
| 03/18/2009 | CN100469951C Femtosecond laser crystal of ytterbium doped with strontium gadolinium borate |
| 03/18/2009 | CN100469950C Femtosecond laser crystal of ytterbium doped strontium yttrium borate |
| 03/18/2009 | CN100469949C A method for growing large-caliber potassium dihydrogen phosphate monocrystal |
| 03/18/2009 | CN100469735C Preparation process of non-agglomeration doped YAG nanometer powder |
| 03/18/2009 | CN100469683C Method for preparing monocrystal silver nano line array with square centimeter order area |
| 03/18/2009 | CN100469682C Method for preparing silver monocrystal nano line array in centimeter-level length |
| 03/17/2009 | USRE40662 Method of preparing a compound semiconductor crystal |
| 03/17/2009 | US7504324 Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method |
| 03/12/2009 | WO2009032579A1 Nickel base superalloy compositions being substantially free of rhenium and superalloy articles |
| 03/12/2009 | WO2009032578A1 Low rhenium nickel base superalloy compositions and superalloy articles |
| 03/12/2009 | WO2009031696A1 Composite substrate for forming light emitting element and method for manufacturing the composite substrate |
| 03/12/2009 | WO2009031434A1 Single crystal thin film of organic semiconductor compound and method for producing the same |
| 03/12/2009 | WO2009031408A1 Exhaust member for semiconductor single crystal production |
| 03/12/2009 | WO2009031365A1 Seed crystal for pulling silicon single crystal and method for manufacturing silicon single crystal by using the seed crystal |
| 03/12/2009 | WO2009031332A1 Substrate for crystal growth and method for crystal growth using the substrate |
| 03/12/2009 | US20090069168 Method of Converting PCA to Sapphire and Converted Article |
| 03/12/2009 | CA2696939A1 Nickel base superalloy compositions being substantially free of rhenium and superalloy articles |
| 03/12/2009 | CA2696923A1 Low rhenium nickel base superalloy compositions and superalloy articles |
| 03/11/2009 | EP2034002A2 Nanoncrystal-metal oxide composites and preparation method thereof |
| 03/11/2009 | EP2032746A1 Method for continual preparation of polycrystalline silicon using a fluidized bed reactor |
| 03/11/2009 | CN101385096A Process for producing superconducting thin-film material, superconducting equipment and superconducting thin-film material |
| 03/11/2009 | CN101384756A Process for producing zno single crystal according to method of liquid phase growth |
| 03/11/2009 | CN101384510A Method for preparing granular polycrystalline silicon using fluidized bed reactor |
| 03/11/2009 | CN101383279A HVPE reactor for preparing nitride semiconductor substrate |
| 03/11/2009 | CN101381892A Method for preparing gallium nitride crystal by solid-state displacement reaction |
| 03/11/2009 | CN101381891A Method for preparing MgZnO single crystal film |
| 03/11/2009 | CN101381890A Method for producing fibrous basic magnesium chloride Mg2(OH)3Cl.4H2O3monocrystal |
| 03/11/2009 | CN101381889A Washing method, washing apparatus for polycrystalline silicon and method of producing polycrystalline |
| 03/11/2009 | CN101381888A Method for producing silicon single crystal |