C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
11/2009
11/25/2009	CN101586255A Prepartion method of calcium sulphate dihydrate crystal whisker
11/25/2009	CN101586254A Di-thiofuran ethylene cobalt complex monocrystal with ability of reverse photochromism and preparation method thereof
11/25/2009	CN101586253A N-type group iii nitride-based compound semiconductor and production method therefor
11/25/2009	CN101586251A Thermal field apparatus for producing 18 inches solar silicon crystal by using Czochralski method
11/25/2009	CN101585088A Method for preparing nano-silver thread
11/25/2009	CN100562491C Method for purifying nano carbon fiber of multi-wall carbon nano-tube
11/24/2009	US7622791 III-V group nitride system semiconductor substrate
11/24/2009	US7622318 Method for producing structured substrate, structured substrate, method for producing semiconductor light emitting device, semiconductor light emitting device, method for producing semiconductor device, semiconductor device, method for producing device, and device
11/24/2009	US7621998 Single crystalline gallium nitride thick film having reduced bending deformation
11/24/2009	US7621997 Methods of preparing a multi-shell nanocrystal structure, multi-shell nanocrystal structures and fabricated device including the same
11/24/2009	CA2473390C Crystal forming apparatus and method for using same
11/24/2009	CA2450286C Compound based on an alkaline-earth, sulphur and aluminium, gallium or indium, method for preparing same and use thereof as luminophore
11/19/2009	WO2009139473A1 Pretreated metal fluorides and process for production of fluoride crystals
11/19/2009	WO2009139447A1 Single crystal manufacturing device and manufacturing method
11/19/2009	US20090283761 Method of cutting single crystals
11/19/2009	US20090283089 Brazed Diamond Tools and Methods for Making the Same
11/19/2009	DE202009002734U1 Nitridhalbleiterbauelement The nitride semiconductor
11/19/2009	CA2724457A1 Method of producing pretreated metal fluorides and fluoride crystals
11/18/2009	EP2119815A1 Method for producing self-supporting nitride semiconductor substrate and self-supporting nitride semiconductor substrate
11/18/2009	EP2118335A1 High uniformity boron doped diamond material
11/18/2009	EP2118333A1 A universal method for selective area growth of organic molecules by vapor deposition
11/18/2009	CN201347468Y Driving system of quartz crystal wafer corrosion machine
11/18/2009	CN101583745A Process for production of GaN crystals, GaN crystals, GaN crystal substrate, semiconductor devices, and apparatus for production of GaN crystals
11/18/2009	CN101583744A Gallium nitride crystals and wafers and method of making
11/18/2009	CN101581542A Insulated electrode for stating polysilicon reducing furnace at high voltage
11/18/2009	CN101580965A Rapid-annealing method for growing large-size sapphire single-crystal with SAPMAC method
11/18/2009	CN101580964A Seed crystal support for growing silicon carbide crystal with high quality
11/18/2009	CN101580963A SAPMAC method for preparing sapphire single-crystal with size above 300mm
11/18/2009	CN101580960A Method for preparing single crystal of titanium-nickel binary alloy
11/18/2009	CN101580959A Hydrothermal preparation method for potassium plumbite single crystal
11/18/2009	CN101580958A Synthetic method for hydroxide radical phosphorite nanocrystalline
11/18/2009	CN101580272A Lead fluoride crystal co-doped with ytterbium and alkaline and preparation method thereof
11/18/2009	CN100561669C Gallium nitride film material preparation method
11/18/2009	CN100560814C Preparation method of low dimensional molybdenum oxide bronze single crystal
11/18/2009	CN100560813C Low-temperature solid phase reaction preparation of silicon nitride nano-material
11/18/2009	CN100560812C Method for preparing single crystal of solid solution of indium lead niobate and lead titanate
11/18/2009	CN100560811C Nanometer silicon wire structure and its growth process
11/18/2009	CN100560807C Method for manufacturing large area evenly distributed cuprum octahedron nanometer particle
11/18/2009	CN100560792C Growth of very uniform silicon carbide epitaxial layers
11/18/2009	CN100560486C Method for preparing nano silicon carbide
11/12/2009	WO2009136465A1 Method for manufacturing single crystal and apparatus for manufacturing single crystal
11/12/2009	WO2009136464A1 Method for growing single crystal and apparatus for pulling up single crystal
11/12/2009	WO2009136449A1 Dielectric ceramic composition
11/12/2009	WO2009136443A1 Dielectric porcelain composition
11/12/2009	WO2009135797A1 Method of preparing luminescent nanocrystals, the resulting nanocrystals and uses thereof
11/12/2009	US20090281344 semiconductors; low dielectric thin films; chemical vapor deposition
11/12/2009	US20090278114 Control of carbon nanotube diameter using cvd or pecvd growth
11/11/2009	EP2116637A2 Crucible for melting silicon and release agent used to the same
11/11/2009	EP2116636A2 Freestanding III-nitride single-crystal substrate and method of manufacturing semiconductor device utilizing the substrate
11/11/2009	EP2116635A2 production method of layered crystal material
11/11/2009	EP2116319A1 Directionally solidified elongated component with elongated grains of differing widths
11/11/2009	EP2115188A2 Method and system for forming a higher purity semiconductor ingot using low purity semiconductor feedstock
11/11/2009	EP2114583A2 Optical cleaning of crystals
11/11/2009	CN201343583Y Manufacturing device for polysilicon crystal bar
11/11/2009	CN201343582Y Gas intake nozzle of polycrystalline silicon reducing furnace
11/11/2009	CN101578398A Process for producing group iii nitride crystal
11/11/2009	CN101575735A Pyridine-2,4,6-triformate manganese ferro-electrical functional material and preparation method thereof
11/11/2009	CN101575734A Erbium-doped lithium niobate crystal and preparation method thereof
11/11/2009	CN101575733A Industrialized production method of solar level polysilicon
11/11/2009	CN101575732A Semiconductor sheets and methods of fabricating the same
11/11/2009	CN101575731A Vertical pulling silicon single crystal growing furnace with water-cooling jacket
11/11/2009	CN101575106A Coproduction technology of calcium sulphate crystal whiskers and magnesium hydrate crystal whiskers by plaster-ammonium rotation method
11/11/2009	CN100558947C Method for growing indium nitride monocrystal thin films
11/11/2009	CN100558946C Low temperature process of preparing RE borate crystal with oxide as precursor
11/11/2009	CN100558945C Method for preparing Nano ultrathin wafer possessing closed packing structure
11/10/2009	US7615116 Method for producing silicon epitaxial wafer and silicon epitaxial wafer
11/10/2009	US7615115 Liquid-phase growth apparatus and method
11/05/2009	WO2009133720A1 Epitaxial silicon wafer
11/05/2009	WO2009133350A1 Electrically-tunable optical devices
11/04/2009	EP2113938A2 Group III nitride crystal and method for surface treatment thereof, Group III nitride stack and manufacturing method thereof, and group III nitride semiconductor device and manufacturing method thereof
11/04/2009	EP2113040A2 Wide-bandgap semiconductor devices
11/03/2009	US7612361 Method of growing a nitride single crystal on silicon wafer, nitride semiconductor light emitting diode manufactured using the same and the manufacturing method
11/03/2009	US7611913 Ferroelectric rare-earth manganese-titanium oxides
11/03/2009	CA2376564C Semi-insulating silicon carbide without vanadium domination
10/2009
10/29/2009	WO2009131064A1 Process for producing si(1-v-w-x)cwalxnv base material, process for producing epitaxial wafer, si(1-v-w-x)cwalxnvbase material, and epitaxial wafer
10/29/2009	WO2009131063A1 Process for producing si(1-v-w-x)cwalxnv base material, process for producing epitaxial wafer, si(1-v-w-x)cwalxnv base material, and epitaxial wafer
10/29/2009	WO2009131061A1 Method of manufacturing a si(1-v-w-x)cwalxnv substrate, method of manufacturing an epitaxial wafer, si(1-v-w-x)cwalxnv substrate, and epitaxial wafer
10/29/2009	WO2009130996A1 Melting furnace
10/29/2009	WO2009130987A1 Process for production of zinc oxide single crystal substrate, single crystal substrate grown by the process, and semiconductor light-emitting device comprising the substrate and film formed thereon
10/29/2009	WO2009130943A1 Single-crystal growth apparatus and raw-material supply method
10/29/2009	WO2009130409A1 Method for producing photovoltaic-grade crystalline silicon by addition of doping impurities and photovoltaic cell
10/29/2009	US20090267190 Freestanding III-Nitride Single-Crystal Substrate and Method of Manufacturing Semiconductor Device Utilizing the Substrate
10/28/2009	EP2112255A1 Silicon crystalline material and method for manufacturing the same
10/28/2009	EP2112254A2 Silicon substrate and manufacturing method thereof
10/28/2009	EP1259663B1 Method and device for growing large-volume oriented monocrystals
10/28/2009	CN101568671A GaN epitaxial substrate, semiconductor device and methods for manufacturing GaN epitaxial substrate and semiconductor device
10/28/2009	CN101565855A Method for preparing silicon nanocrystal superlattice structure based on co-evaporation method
10/28/2009	CN101565854A Freestanding III-nitride single-crystal substrate and method of manufacturing semiconductor device utilizing the substrate
10/28/2009	CN101565853A Production process of monocrystalline silicon doping agent
10/28/2009	CN101565852A Crystal continuous producing device and method for continuously producing polysilicon by using same
10/28/2009	CN101565851A Manufacture method of solar silicon single crystal
10/28/2009	CN101565192A Methods for preparing anhydrous lithium iodide and scintillation crystal doped with lithium iodide
10/28/2009	CN101565185A Method of manufacturing polycrystalline silicon rod
10/28/2009	CN101565184A Electrode sealing method in hydrogen furnace device for polysilicon production and device thereof
10/28/2009	CN100555576C Semiconductor wafers with highly precise edge profile and method for producing them
10/28/2009	CN100555572C Method for manufacturing semiconductor device
10/28/2009	CN100554532C Method for water-phase rapid synthesis of CdTe nano crystal at warm condition
10/28/2009	CN100553833C Method for preparing metallic simple substance nano-crystal material
10/27/2009	US7608828 Solid solution material of rare earth element fluoride (polycrystal and single crystal), and method for preparation thereof, and radiation detector and test device
10/27/2009	US7608201 Scintillator material based on rare earth with a reduced nuclear background

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