Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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09/15/2009 | US7589345 Nitride-based compound semiconductor substrate and method for fabricating the same |
09/15/2009 | US7589001 Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method |
09/15/2009 | US7588743 Cesium-rubidium-borate nonlinear optical crystal and its growth method and applications |
09/15/2009 | US7588636 Method of production of silicon carbide single crystal |
09/15/2009 | US7587912 Method for producing quartz glass crucible for use in pulling silicon single crystal and quartz glass crucible produced by said method |
09/15/2009 | CA2469150C Boron doped diamond |
09/11/2009 | WO2009111415A1 System and method for diamond deposition using a liquid-solvent carbon-transfer mechanism |
09/11/2009 | WO2009111245A1 Method and apparatus for growth of high purity 6h-sic single crystal |
09/11/2009 | WO2009110436A1 Nitride semiconductor crystal and manufacturing method thereof |
09/11/2009 | WO2009110401A1 Nanodiamond film |
09/10/2009 | DE112006004098T5 Mehrfach-Chip-Baugruppe Multi-chip module |
09/09/2009 | EP2099073A2 Silicon substrate and manufacturing method of the same |
09/09/2009 | EP2098620A1 Method of manufacturing silicon substrate |
09/09/2009 | EP2097934A2 Iii-nitride light emitting devices grown on templates to reduce strain |
09/09/2009 | EP1617939B1 Method for the production of semiconductor granules |
09/09/2009 | CN201305658Y Waste heat boiler type polycrystalline silicon reduction furnace cooling device |
09/09/2009 | CN201305657Y Reclaiming and condensing device used in polycrystalline silicon production |
09/09/2009 | CN201305656Y Air cooling device of polycrystalline silicon hydrogen reduction furnace air outlet pipe |
09/09/2009 | CN201305655Y Connecting devices of polycrystalline silicon hydrogen reduction furnace silicon core rods and graphite clamping heads |
09/09/2009 | CN201305654Y Polycrystalline silicon hydrogen reduction furnace electrode structure |
09/09/2009 | CN201305653Y Polycrystalline silicon hydrogen reduction furnace |
09/09/2009 | CN201305652Y High-temperature water-cooling device of polycrystalline silicon hydrogen reduction furnace dropbottom |
09/09/2009 | CN201305651Y Device for mixing chlorsilane and hydrogen in polysilicon production |
09/09/2009 | CN101525767A One-dimensional nano single-crystal tubular silicon carbide as well as preparation method and application thereof |
09/09/2009 | CN101525766A Method for preparing magnetic nano-particle periodically-packed boron-nitride bamboo-like nano-tubes |
09/09/2009 | CN101525765A Thermal field of silicon single crystal growth |
09/09/2009 | CN101525764A Method for preparing vacuum zone melting high resistant silicon single crystal |
09/09/2009 | CN101525707A Method for reducing tendency of TCP phase precipitation in nickel-base single crystal superalloy |
09/09/2009 | CN101525706A Modification method for enhancing high-temperature creep resistance in nickel-base single crystal superalloy |
09/09/2009 | CN101525705A Modification method for reducing contraction cavities in nickel-base single crystal superalloy |
09/09/2009 | CN101525540A Method for preparing fluorescent nano material converted on NaYF4 |
09/09/2009 | CN101525134A Method for preparing cubic silicon carbide ultrafine powder by using waste plastic at low temperature |
09/09/2009 | CN101524721A Method for preparing single-crystal copper bonding wire |
09/09/2009 | CN100537855C Method for doping Sb for growing Zn1-x MgxO crystal film |
09/09/2009 | CN100537854C Preparation of silicon dioxide nano-tube |
09/09/2009 | CN100537853C Method for preparing micron/nano tungsten oxide crystal whisker/wire/bar |
09/08/2009 | US7585371 Substrate susceptors for receiving semiconductor substrates to be deposited upon |
09/08/2009 | US7585366 High pressure superabrasive particle synthesis |
09/08/2009 | US7585365 Corundum crystal formed body |
09/08/2009 | CA2543151C Gan substrate, method of growing gan and method of producing gan substrate |
09/08/2009 | CA2475966C Crystal production method |
09/03/2009 | WO2009108700A1 Method for producing group iii nitride wafers and group iii nitride wafers |
09/03/2009 | WO2009108358A1 Methods of making an unsupported article of pure or doped semiconducting material |
09/03/2009 | WO2009107834A1 Quartz crucible for pulling silicon single crystal and method for manufacturing the quartz crucible |
09/03/2009 | WO2009107525A1 Thin film of aluminum nitride and process for producing the thin film of aluminum nitride |
09/03/2009 | WO2009107188A1 METHOD FOR GROWING SINGLE CRYSTAL SiC |
09/03/2009 | WO2009106625A1 Method for the crystallogenesis of a material electrically conducting at the molten state |
09/03/2009 | WO2009106023A1 Method of making nucleation layer for diamond growth |
09/03/2009 | WO2009105939A1 Composite compound with mixed crystalline structure |
09/03/2009 | US20090220792 Synthesis of Alloyed Nanocrystals in Aqueous or Water-Soluble Solvents |
09/03/2009 | DE10239083B4 Vorrichtung zum Versorgen einer Prozesskammer mit fluiden Medien und deren Verwendung Device for supplying a process chamber with fluid media and their use |
09/03/2009 | DE102007028293B4 Plasmareaktor, dessen Verwendung und Verfahren zur Herstellung einkristalliner Diamantschichten A plasma reactor, its use and methods for preparing single-crystal diamond films |
09/03/2009 | CA2715423A1 Improved forsterite and method for making |
09/03/2009 | CA2688453A1 Thin film of aluminum nitride and process for producing the thin film of aluminum nitride |
09/02/2009 | EP2096196A1 Method for manufacturing an epitaxial silicon wafer |
09/02/2009 | EP2094884A1 Method and apparatus for the production of crystalline silicon substrates |
09/02/2009 | EP1966847A4 Methods for oriented growth of nanowires on patterned substrates |
09/02/2009 | CN201301360Y Parallel double spiral diversion channel chassis of polysilicon reduction furnace |
09/02/2009 | CN201301359Y Step progressive baffle jacket of polysilicon reduction furnace |
09/02/2009 | CN101522962A Process for producing nitride semiconductor, crystal growth rate enhancement agent, nitride single crystal, wafer and device |
09/02/2009 | CN101521202A Controlled edge resistivity in a silicon wafer |
09/02/2009 | CN101519802A Crystal growth furnace body structure with emergency decompression arrangement |
09/02/2009 | CN101519800A Method for growing Ba8Ga16Ge30 thermoelectric monocrystal |
09/02/2009 | CN101519799A Method for preparing non-polar GaN thick film on sapphire substrate |
09/02/2009 | CN101519798A Method for batch preparation of texture samarium-barium-copper-oxygen crystal seeds |
09/02/2009 | CN101519797A Method for pulling silicon core by crystal crushed material and device for applying same |
09/02/2009 | CN101519792A Crystallization method for controlling crystallization position on carrier and structure of the carrier |
09/02/2009 | CN101519194A Preparation method of metastable cubic boron nitride (e-BN) nano-powder |
09/02/2009 | CN100535200C Apparatus for production of crystal of group iii element nitride and process for producing crystal of group III element nitride |
09/01/2009 | US7582161 Atomic layer deposited titanium-doped indium oxide films |
09/01/2009 | US7582159 Method for producing a single crystal |
09/01/2009 | CA2373170C Method and apparatus for epitaxially growing a material on a substrate |
08/27/2009 | WO2009104534A1 Silicon monocrystal |
08/27/2009 | WO2009104533A1 Silicon single crystal growing device and quartz crucible |
08/27/2009 | WO2009104532A1 Silicon monocrystal growth method |
08/27/2009 | WO2009104049A1 Silicon substrate, method and equipment for making the silicon substrate |
08/27/2009 | WO2009103243A1 CRYSTAL STRUCTURE OF THE INFLUENZA VIRUS POLYMERASE PAc-PB1n COMPLEX AND USES THEREOF |
08/27/2009 | WO2007010645A8 Gallium nitride wafer |
08/27/2009 | US20090215248 AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING SAME AND METHOD OF PRODUCING SAME |
08/27/2009 | US20090214884 Gravitation deflecting mechanisms |
08/27/2009 | US20090212667 Piezoelectric single crystal device and fabrication method thereof |
08/27/2009 | US20090211516 Method of manufacturing single crystal wire |
08/26/2009 | EP2093312A1 Method of manufacturing group III nitride crystal |
08/26/2009 | EP2092996A1 Method and apparatus for as-cast seal on turbine blades |
08/26/2009 | EP2092579A2 Use of thermoelectric materials for low temperature thermoelectric purposes |
08/26/2009 | EP1866247B1 Device and method for the crystallisation of nonferrous metals |
08/26/2009 | EP1664398A4 Methods and apparatus for rapid crystallization of biomolecules |
08/26/2009 | EP1026290B1 Method and apparatus for producing silicon carbide single crystal |
08/26/2009 | CN101517759A Method for manufacturing group iii nitride compound semiconductor light-emitting device, group iii nitride compound semiconductor light-emitting device, and lamp |
08/26/2009 | CN101517134A Process for producing gan single-crystal, gan thin-film template substrate and gan single-crystal growing apparatus |
08/26/2009 | CN101516782A Alpha-alumina powder |
08/26/2009 | CN101515629A Piezoelectric thin film, method of manufacturing piezoelectric thin film, piezoelectric element, and inkjet recording head |
08/26/2009 | CN101514494A Preparation method of Beta-Si3N4 single crystal |
08/26/2009 | CN101514493A In-situ grown titanium carbonitride crystal whisker materials and preparation method thereof |
08/26/2009 | CN101514492A Large size potassium strontium borate nonlinear optical crystal, preparation and use thereof |
08/26/2009 | CN101514491A Ba3BP3O12 crystalloid, growing method and application thereof |
08/26/2009 | CN101514490A Cultivation growing process for optical quartz crystal |
08/26/2009 | CN101514489A Fluoborate and crystal containing rare earth ions, growing method and application of crystal |
08/26/2009 | CN101514488A A silicon chip for growing silicon polycrystal crystal rod and a method for preparing the same |
08/26/2009 | CN101514487A Method for preparation of silicon crystal with lower oxygen content |