Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
12/2008
12/10/2008CN101319397A Double-tungstate self-raman crystal and preparation and application thereof
12/10/2008CN101319396A Ytterbium doped yttrium lithium tungstate of femtosecond pulsed laser crystal and method of producing the same
12/10/2008CN101319395A Neodymium doped lanthanum yttrium vanadate laser crystal and preparation method and application thereof
12/10/2008CN101319394A Nonlinear optical crystal lanthanum calcium vanadate and preparation method and application thereof
12/10/2008CN101319393A Preparation method of strontium bismuth tantalite nanometer line
12/10/2008CN101319392A Hafnium iron manganese three-doped lithium niobate crystal and method of producing the same
12/10/2008CN101319391A Synthesis of constituent-homogeneous spherical lithium tantalite doping polycrystal raw material
12/10/2008CN101319390A Preparation method of leadless lutetium bismuth carbuncle thin film
12/10/2008CN101319389A Preparation method of gadolinium gallium garnet planar interface crystal
12/10/2008CN101319388A Preparation method of multicenter zinc aluminate nanometer pipe
12/10/2008CN101319387A Preparation method of high-temperature superconductor nano-structured array
12/10/2008CN101319386A Preparation method of KTP crystal with anti-soil performance
12/10/2008CN101319385A KTP crystal growth method suitable for PPKTP device production
12/10/2008CN101319384A Method for Na-doped growing p type Zn(1-x)MgxO crystal thin film
12/10/2008CN101319383A Preparation method of nanometer barium zirconate
12/10/2008CN101319382A Calcium sulphate crystal whisker preparation method with sea water bittern as raw material
12/10/2008CN101319381A Low temperature condition preparation of orientated growth nanometer flaky Bi2Fe4O9
12/10/2008CN101319380A Method for rare earth 242 phase control component growth superconducting block material
12/10/2008CN101319379A Method for 45 degree rare earth barium copper oxygen thin film seed high speed growth superconducting block material
12/10/2008CN101319378A Preparation method of alkali type magnesium sulfate crystal whisker
12/10/2008CN101319377A Nano SrAl2O4 material and method for producing the same
12/10/2008CN101319376A Rare earth doping nano SrAl2O4 material and method for producing the same
12/10/2008CN101319375A Optical-level quartz crystal temperature-variable temperature difference method growth technique
12/10/2008CN101319374A Optical-level single-sided long quartz crystal growth technique
12/10/2008CN101319373A Production method of orderly arranged manganese oxide
12/10/2008CN101319372A Method for low temperature controllable preparation of zinc oxide nano line and application thereof
12/10/2008CN101319371A Production method of spindle-shaped nano ZnO monocrystal
12/10/2008CN101319370A Method for controlling orientation and profile characteristic of zinc oxide nano-stick/nano-tube array
12/10/2008CN101319369A Method of preparing type p ZnO nano-wire
12/10/2008CN101319368A Method for simultaneously synthesizing SiO2 nan-wire and SiC crystal whisker
12/10/2008CN101319367A Method for preparing solar energy level polysilicon with high temperature vacuum preprocessing
12/10/2008CN101319366A Automatic control system and method for polysilicon ingot furnace
12/10/2008CN101319365A Process for preparing silicon crystal
12/10/2008CN101319364A Process for preparing gallium doped elementarysubstance solar energy single crystal
12/10/2008CN101319363A Method for preparing polysilicon
12/10/2008CN101319362A Method of preparing polysilicon film and preparing system
12/10/2008CN101319361A 单晶金刚石 Single crystal diamond
12/10/2008CN101319360A 单晶金刚石 Single crystal diamond
12/10/2008CN101319359A 单晶金刚石 Single crystal diamond
12/10/2008CN101319358A 单晶金刚石 Single crystal diamond
12/10/2008CN101319357A Preparation of copper nano-wire with microwave auxiliary liquid phase reduction
12/10/2008CN101319356A Preparation of nano-carbon tube with added Zn
12/10/2008CN101319355A Method for preparing dish shaped large-crystal domain polysilicon with nickel solution fogdrop, product and application thereof
12/10/2008CN101319354A Purification process for single-wall nano-carbon tube film
12/10/2008CN101319284A Method of manufacturing single-phase Sm2Co17 nanocrystalline block body material
12/10/2008CN101318823A Method for manufacturing vanadium doped visible light-responsible titanium dioxide nanocrystalline composite colloidal sols
12/10/2008CN101318694A Method for preparing titanium dioxide nanocrystalline with highlight catalytic activity in low-temperature
12/10/2008CN101318656A Metallurgy purification method for polysilicon
12/10/2008CN101318655A Method and device for removing foreign matter of phosphor in polysilicon
12/10/2008CN101318654A Method for preparing high purity polysilicon particle with fluidized bed and bed fluidizing reactor
12/10/2008CN101318645A Method for preparing carbon nano-tube array with acetone as carbon source
12/10/2008CN101318640A Process for synthesizing CePO4 nano-material with monocline structure
12/10/2008CN101318135A Method for preparation of visible light responding zinc ferrous acid nanocrystalline colloidal sol
12/10/2008CN101318107A Preparation method for pure silicon beta molecular sieve film
12/10/2008CN100442442C Process for producing silicon epitaxial wafer
12/10/2008CN100441751C Process of preparing oil soluble nano titania rod
12/10/2008CN100441750C Process to produce a CU(IN,GA)SE2 single crystal powder and monograin membrane solarcell comprising this powder
12/09/2008US7462893 Method of fabricating GaN
12/04/2008WO2008146865A1 Method for production of ultraviolet light-emitting hexagonal boron nitride crystal
12/04/2008WO2008146725A1 Process for production of silicon single crystal, and highly doped n-type semiconductor substrate
12/04/2008WO2008146724A1 Process for production of silicon single crystal, and silicon single crystal substrate
12/04/2008WO2008146699A1 Method for manufacturing gan-based nitride semiconductor self-supporting substrate
12/04/2008WO2008146443A1 Method for growing silicon single crystal
12/04/2008WO2008146439A1 Method for pulling silicon single crystal
12/04/2008WO2008146371A1 Silicon single-crystal pullup apparatus
12/04/2008WO2008145236A1 Economical process for the production of si by reduction of sicl4 with liquid zn
12/04/2008WO2008123869A3 Millimeter-long nanowires
12/04/2008US20080299748 Group III-V Crystal
12/04/2008US20080299314 Enhanced alumina layer with texture
12/03/2008EP1997941A1 PROCESS FOR PRODUCING ZnO SINGLE CRYSTAL ACCORDING TO METHOD OF LIQUID PHASE GROWTH
12/03/2008EP1997940A1 METHOD FOR MANUFACTURING Si SINGLE CRYSTAL INGOT BY CZ METHOD
12/03/2008EP1997125A2 Growth method using nanostructure compliant layers and hvpe for producing high quality compound semiconductor materials
12/03/2008CN201158723Y Flame-proof heat preserving cover of high temperature furnace
12/03/2008CN201158722Y Thermal field device for gallium arsenide crystal growth
12/03/2008CN101317247A Epitaxial growth of nitride compound semiconductors structures
12/03/2008CN101316953A Quartz glass crucible, process for producing the same, and use
12/03/2008CN101314183A Method for synthesizing monocrystal bismuth nano-wire with intense magnetic field abduction
12/03/2008CN100440557C Semiconductor light emitting device and device
12/03/2008CN100440556C Semiconductor light emitting device and device
12/03/2008CN100440436C Vapor-phase growth method
12/03/2008CN100440435C Semiconductor device and method for manufacturing the same
12/03/2008CN100439572C Method for preparing titanate lamella
12/03/2008CN100439554C Method of synthesizing a compound of the formula Mn*Axn, film of the compound and its use
12/03/2008CN100439397C Crystallization of IGF-1
12/02/2008US7459720 Single crystal wafer and solar battery cell
12/02/2008US7459318 Ferroelectric and high dielectric constant integrated circuit capacitors with three-dimensional orientation for high-density memories, and method of making the same
12/02/2008US7459024 Method of forming an N-type doped single crystal diamond
12/02/2008US7459021 Methods and apparatus for rapid crystallization of biomolecules
11/2008
11/27/2008WO2008143166A1 Method for manufacturing semiconductor crystal of nitride of element belonging to group-iii, semiconductor substrate formed of nitride of element belonging to group-iii, and semiconductor light emission device
11/27/2008WO2008142993A1 Method for manufacturing single crystal
11/27/2008WO2008142992A1 Method for manufacturing single crystal
11/27/2008WO2008142842A1 Apparatus for producing protein crystals and method of producing protein crystals
11/27/2008WO2008142395A1 Apparatus for crystal growth
11/27/2008WO2008099422A3 Method and apparatus for producing single crystalline diamonds
11/27/2008US20080292535 small refractive index differences and few small angle grain boundaries have a bi-directional scattering distribution function value (BSDF) of less than 1.5*10-6 or 5*10-7.
11/27/2008US20080292524 Crucible for the Treatment of Molten Silicon
11/27/2008US20080289569 Method for Producing Group 13 Metal Nitride Crystal, Method for Manufacturing Semiconductor Device, and Solution and Melt Used in Those Methods
11/27/2008DE112007000120T5 Verfahren zum Injizieren eines Dotierungsmittelgases A method of injecting a dopant gas
11/27/2008DE102008022747A1 Silicium-Einkristall-Wafer und Verfahren zur Herstellung Silicon single crystal wafer and methods for preparing
11/27/2008CA2683288A1 Crystalline and amorphous forms of peptide