Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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12/10/2008 | CN101319397A Double-tungstate self-raman crystal and preparation and application thereof |
12/10/2008 | CN101319396A Ytterbium doped yttrium lithium tungstate of femtosecond pulsed laser crystal and method of producing the same |
12/10/2008 | CN101319395A Neodymium doped lanthanum yttrium vanadate laser crystal and preparation method and application thereof |
12/10/2008 | CN101319394A Nonlinear optical crystal lanthanum calcium vanadate and preparation method and application thereof |
12/10/2008 | CN101319393A Preparation method of strontium bismuth tantalite nanometer line |
12/10/2008 | CN101319392A Hafnium iron manganese three-doped lithium niobate crystal and method of producing the same |
12/10/2008 | CN101319391A Synthesis of constituent-homogeneous spherical lithium tantalite doping polycrystal raw material |
12/10/2008 | CN101319390A Preparation method of leadless lutetium bismuth carbuncle thin film |
12/10/2008 | CN101319389A Preparation method of gadolinium gallium garnet planar interface crystal |
12/10/2008 | CN101319388A Preparation method of multicenter zinc aluminate nanometer pipe |
12/10/2008 | CN101319387A Preparation method of high-temperature superconductor nano-structured array |
12/10/2008 | CN101319386A Preparation method of KTP crystal with anti-soil performance |
12/10/2008 | CN101319385A KTP crystal growth method suitable for PPKTP device production |
12/10/2008 | CN101319384A Method for Na-doped growing p type Zn(1-x)MgxO crystal thin film |
12/10/2008 | CN101319383A Preparation method of nanometer barium zirconate |
12/10/2008 | CN101319382A Calcium sulphate crystal whisker preparation method with sea water bittern as raw material |
12/10/2008 | CN101319381A Low temperature condition preparation of orientated growth nanometer flaky Bi2Fe4O9 |
12/10/2008 | CN101319380A Method for rare earth 242 phase control component growth superconducting block material |
12/10/2008 | CN101319379A Method for 45 degree rare earth barium copper oxygen thin film seed high speed growth superconducting block material |
12/10/2008 | CN101319378A Preparation method of alkali type magnesium sulfate crystal whisker |
12/10/2008 | CN101319377A Nano SrAl2O4 material and method for producing the same |
12/10/2008 | CN101319376A Rare earth doping nano SrAl2O4 material and method for producing the same |
12/10/2008 | CN101319375A Optical-level quartz crystal temperature-variable temperature difference method growth technique |
12/10/2008 | CN101319374A Optical-level single-sided long quartz crystal growth technique |
12/10/2008 | CN101319373A Production method of orderly arranged manganese oxide |
12/10/2008 | CN101319372A Method for low temperature controllable preparation of zinc oxide nano line and application thereof |
12/10/2008 | CN101319371A Production method of spindle-shaped nano ZnO monocrystal |
12/10/2008 | CN101319370A Method for controlling orientation and profile characteristic of zinc oxide nano-stick/nano-tube array |
12/10/2008 | CN101319369A Method of preparing type p ZnO nano-wire |
12/10/2008 | CN101319368A Method for simultaneously synthesizing SiO2 nan-wire and SiC crystal whisker |
12/10/2008 | CN101319367A Method for preparing solar energy level polysilicon with high temperature vacuum preprocessing |
12/10/2008 | CN101319366A Automatic control system and method for polysilicon ingot furnace |
12/10/2008 | CN101319365A Process for preparing silicon crystal |
12/10/2008 | CN101319364A Process for preparing gallium doped elementarysubstance solar energy single crystal |
12/10/2008 | CN101319363A Method for preparing polysilicon |
12/10/2008 | CN101319362A Method of preparing polysilicon film and preparing system |
12/10/2008 | CN101319361A 单晶金刚石 Single crystal diamond |
12/10/2008 | CN101319360A 单晶金刚石 Single crystal diamond |
12/10/2008 | CN101319359A 单晶金刚石 Single crystal diamond |
12/10/2008 | CN101319358A 单晶金刚石 Single crystal diamond |
12/10/2008 | CN101319357A Preparation of copper nano-wire with microwave auxiliary liquid phase reduction |
12/10/2008 | CN101319356A Preparation of nano-carbon tube with added Zn |
12/10/2008 | CN101319355A Method for preparing dish shaped large-crystal domain polysilicon with nickel solution fogdrop, product and application thereof |
12/10/2008 | CN101319354A Purification process for single-wall nano-carbon tube film |
12/10/2008 | CN101319284A Method of manufacturing single-phase Sm2Co17 nanocrystalline block body material |
12/10/2008 | CN101318823A Method for manufacturing vanadium doped visible light-responsible titanium dioxide nanocrystalline composite colloidal sols |
12/10/2008 | CN101318694A Method for preparing titanium dioxide nanocrystalline with highlight catalytic activity in low-temperature |
12/10/2008 | CN101318656A Metallurgy purification method for polysilicon |
12/10/2008 | CN101318655A Method and device for removing foreign matter of phosphor in polysilicon |
12/10/2008 | CN101318654A Method for preparing high purity polysilicon particle with fluidized bed and bed fluidizing reactor |
12/10/2008 | CN101318645A Method for preparing carbon nano-tube array with acetone as carbon source |
12/10/2008 | CN101318640A Process for synthesizing CePO4 nano-material with monocline structure |
12/10/2008 | CN101318135A Method for preparation of visible light responding zinc ferrous acid nanocrystalline colloidal sol |
12/10/2008 | CN101318107A Preparation method for pure silicon beta molecular sieve film |
12/10/2008 | CN100442442C Process for producing silicon epitaxial wafer |
12/10/2008 | CN100441751C Process of preparing oil soluble nano titania rod |
12/10/2008 | CN100441750C Process to produce a CU(IN,GA)SE2 single crystal powder and monograin membrane solarcell comprising this powder |
12/09/2008 | US7462893 Method of fabricating GaN |
12/04/2008 | WO2008146865A1 Method for production of ultraviolet light-emitting hexagonal boron nitride crystal |
12/04/2008 | WO2008146725A1 Process for production of silicon single crystal, and highly doped n-type semiconductor substrate |
12/04/2008 | WO2008146724A1 Process for production of silicon single crystal, and silicon single crystal substrate |
12/04/2008 | WO2008146699A1 Method for manufacturing gan-based nitride semiconductor self-supporting substrate |
12/04/2008 | WO2008146443A1 Method for growing silicon single crystal |
12/04/2008 | WO2008146439A1 Method for pulling silicon single crystal |
12/04/2008 | WO2008146371A1 Silicon single-crystal pullup apparatus |
12/04/2008 | WO2008145236A1 Economical process for the production of si by reduction of sicl4 with liquid zn |
12/04/2008 | WO2008123869A3 Millimeter-long nanowires |
12/04/2008 | US20080299748 Group III-V Crystal |
12/04/2008 | US20080299314 Enhanced alumina layer with texture |
12/03/2008 | EP1997941A1 PROCESS FOR PRODUCING ZnO SINGLE CRYSTAL ACCORDING TO METHOD OF LIQUID PHASE GROWTH |
12/03/2008 | EP1997940A1 METHOD FOR MANUFACTURING Si SINGLE CRYSTAL INGOT BY CZ METHOD |
12/03/2008 | EP1997125A2 Growth method using nanostructure compliant layers and hvpe for producing high quality compound semiconductor materials |
12/03/2008 | CN201158723Y Flame-proof heat preserving cover of high temperature furnace |
12/03/2008 | CN201158722Y Thermal field device for gallium arsenide crystal growth |
12/03/2008 | CN101317247A Epitaxial growth of nitride compound semiconductors structures |
12/03/2008 | CN101316953A Quartz glass crucible, process for producing the same, and use |
12/03/2008 | CN101314183A Method for synthesizing monocrystal bismuth nano-wire with intense magnetic field abduction |
12/03/2008 | CN100440557C Semiconductor light emitting device and device |
12/03/2008 | CN100440556C Semiconductor light emitting device and device |
12/03/2008 | CN100440436C Vapor-phase growth method |
12/03/2008 | CN100440435C Semiconductor device and method for manufacturing the same |
12/03/2008 | CN100439572C Method for preparing titanate lamella |
12/03/2008 | CN100439554C Method of synthesizing a compound of the formula Mn*Axn, film of the compound and its use |
12/03/2008 | CN100439397C Crystallization of IGF-1 |
12/02/2008 | US7459720 Single crystal wafer and solar battery cell |
12/02/2008 | US7459318 Ferroelectric and high dielectric constant integrated circuit capacitors with three-dimensional orientation for high-density memories, and method of making the same |
12/02/2008 | US7459024 Method of forming an N-type doped single crystal diamond |
12/02/2008 | US7459021 Methods and apparatus for rapid crystallization of biomolecules |
11/27/2008 | WO2008143166A1 Method for manufacturing semiconductor crystal of nitride of element belonging to group-iii, semiconductor substrate formed of nitride of element belonging to group-iii, and semiconductor light emission device |
11/27/2008 | WO2008142993A1 Method for manufacturing single crystal |
11/27/2008 | WO2008142992A1 Method for manufacturing single crystal |
11/27/2008 | WO2008142842A1 Apparatus for producing protein crystals and method of producing protein crystals |
11/27/2008 | WO2008142395A1 Apparatus for crystal growth |
11/27/2008 | WO2008099422A3 Method and apparatus for producing single crystalline diamonds |
11/27/2008 | US20080292535 small refractive index differences and few small angle grain boundaries have a bi-directional scattering distribution function value (BSDF) of less than 1.5*10-6 or 5*10-7. |
11/27/2008 | US20080292524 Crucible for the Treatment of Molten Silicon |
11/27/2008 | US20080289569 Method for Producing Group 13 Metal Nitride Crystal, Method for Manufacturing Semiconductor Device, and Solution and Melt Used in Those Methods |
11/27/2008 | DE112007000120T5 Verfahren zum Injizieren eines Dotierungsmittelgases A method of injecting a dopant gas |
11/27/2008 | DE102008022747A1 Silicium-Einkristall-Wafer und Verfahren zur Herstellung Silicon single crystal wafer and methods for preparing |
11/27/2008 | CA2683288A1 Crystalline and amorphous forms of peptide |