Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
05/2010
05/26/2010CN201485281U Furnace-inside argon spraying device of polysilicon ingot furnace
05/26/2010CN1942611B Group iii nitride crystal substrate, method for producing same, and group iii nitride semiconductor device
05/26/2010CN1916243B Self-double frequency laser crystal of calcium gadolinium vanadic acid with rare earth ions being doped, and preparation method
05/26/2010CN101713099A Silicon wafer for solar cell
05/26/2010CN101713098A Silicon wafer and fabrication method thereof
05/26/2010CN101713096A Method and device for increasing charging amount of czochralski silicon single crystal
05/26/2010CN101094940B Magnesium oxide single crystal having controlled crystallinity and method for preparation thereof, and substrate using said single crystal
05/26/2010CN101024903B Gallium nitride crystal substrate and method of producing same
05/25/2010US7723217 Method for manufacturing gallium nitride single crystalline substrate using self-split
05/20/2010WO2010025397A3 Directional solidification of silicon by electric induction susceptor heating in a controlled environment
05/20/2010WO2010024724A3 Method for synthesising semiconductor quantum dots
05/19/2010EP2186930A1 Zno substrate and method for processing zno substrate
05/19/2010EP2186929A1 Seed crystal for pulling silicon single crystal and method for manufacturing silicon single crystal by using the seed crystal
05/19/2010CN201473327U Novel equipment flange for poly-silicon hydrogenation furnace
05/19/2010CN201473326U Polysilicon directional crystallization furnace
05/19/2010CN201473325U Overhead polysilicon furnace
05/19/2010CN201473324U Overhead type polysilicon furnace with upper heater and lower heater
05/19/2010CN201473323U Polycrystalline silicon ingot production furnace capable of effectively controlling thermal field
05/19/2010CN201473322U Special-purpose square graphite crucible for casting solar energy polysilicon
05/19/2010CN1954101B Method and apparatus for producing group III nitride crystal
05/19/2010CN101709509A Method for preparing magnesium borate whisker
05/19/2010CN101709508A Preparation method of bismuth-containing eulytite bismuth silicate crystals
05/19/2010CN101709507A Neodymium-doped silicic acid yttrium gadolinium laser crystal and preparation method thereof
05/19/2010CN101709505A Energy-saving thermal field for growing silicon single crystal
05/19/2010CN101307487B Directional solidification method and its device for continuous production for polycrystalline silicon ingot
05/19/2010CN101220516B Low-temperature method for manufacturing nano-MgO crystal whisker
05/19/2010CN101220515B Method for producing metallic oxide crystal whisker
05/19/2010CN101092748B Method for preparing Te-Zn-Cd monocrystal in large volume
05/18/2010US7718469 Alternative methods for fabrication of substrates and heterostructures made of silicon compounds and alloys
05/18/2010US7718003 Method and apparatus for crystal growth
05/18/2010US7718001 Method for fabricating semiconductor epitaxial layers using metal islands
05/18/2010US7718000 Method and article of manufacture corresponding to a composite comprised of ultra nonacrystalline diamond, metal, and other nanocarbons useful for thermoelectric and other applications
05/17/2010CA2685145A1 Method of manufacturing nano-crystalline cellulose film
05/14/2010WO2010053915A2 Methods for preparing a melt of silicon powder for silicon crystal growth
05/14/2010WO2010053586A2 Systems, methods and substrates of monocrystalline germanium crystal growth
05/14/2010WO2010052221A1 Fluorescent nanoparticles, method for preparing same, and application thereof in biological marking
05/14/2010WO2010051759A1 Electrochemical method for manufacturing one or more of silicon nanopowder, silicon nanowire and silicon nanotube
05/14/2010WO2010015296A3 Transmitting optical element consisting of magnesium-aluminium spinel
05/12/2010EP2183412A2 Methods for manufacturing cast silicon from seed crystals
05/12/2010EP2183410A1 Methods and apparatuses for manufacturing cast silicon from seed crystals
05/12/2010EP2183400A1 Ultrahard diamond composites
05/12/2010EP1540048B1 Silicon carbide single crystal and method and apparatus for producing the same
05/12/2010DE102009035189A1 Verfahren und Apparatur zur Steuerung des Durchmessers eines Siliciumkristall-Ingots in einem Züchtungsverfahren A method and apparatus for controlling the diameter of a silicon crystal ingot in a culture method
05/12/2010DE102008053856A1 Method for melt-free transformation of bundles of polycrystalline fibers into bundles of single crystalline fiber or fibers with single crystalline area, by laterally fanning out the bundles of fibers from polycrystalline material
05/12/2010CN201459280U Silicon single crystal rod
05/12/2010CN201459279U Silicon single crystal rod
05/12/2010CN201459278U Silicon single crystal rod
05/12/2010CN201458748U Reinforcing ring-type deflector jacket of hydrogenation furnace equipment
05/12/2010CN201458747U Polysilicon reduction furnace
05/12/2010CN1995488B Method for preparing ferric oxide monocrystalline nano line
05/12/2010CN1995482B Nano cobalt monoxide crystal plane controllable growth method
05/12/2010CN1950549B Charge restraining method and apparatus for piezoelectric oxide single crystal
05/12/2010CN1935648B Method for preparing polycrystalline silicon for solarcell from rice husk
05/12/2010CN1924114B 单晶及其应用 Crystal and its application
05/12/2010CN1877877B Nitride semiconductor substrate and method of producing same
05/12/2010CN101707871A Deposition of high-purity silicon via high-surface area gas-solid or gas-liquid interfaces and recovery via liqued phase
05/12/2010CN101705519A Barium strontium titanate ferroelectric nano single crystal particle and preparation method thereof
05/12/2010CN101705518A Bi-doped solonetz borate crystal and preparation method and application thereof
05/12/2010CN101705517A Method for pulling square shoulder germanium infrared single crystal
05/12/2010CN101705516A Method for growing large-size high-temperature oxide crystals by using top-seeded temperature gradient method
05/12/2010CN101155948B Hydrodynamic cavitation crystallization device and process
05/12/2010CN101133192B Electromagnetic pumping of liquid silicon in a crystal growing process
05/12/2010CN101048877B Photovoltaic cell comprising a photovoltaically active semiconductor material
05/11/2010US7713850 Method for forming a structure provided with at least one zone of one or several semiconductor nanocrystals localised with precision
05/11/2010US7713511 working in the state of a substrate a lithium tantalate crystal grown by the Czochralski method is buried in a mixed powder of Al and Al2O3, followed by heat treatment; lithium tantalate having volume resistivity which has been controlled within the range of from 1010 to 1013 Omega cm.
05/11/2010US7713507 Tough diamonds and method of making thereof
05/11/2010US7713353 β-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method
05/11/2010US7713351 Method for crystallization of proteins using polysaccharides
05/11/2010US7713346 Vapor deposition using amine containing organosilicon compound; integrated circuits; disilane derivative compound that is fully substituted with alkylamino and/or dialkylamino functional groups
05/06/2010WO2010051325A1 A hybrid nanostructure composed of a natural photosystem and semiconductor nanoparticles
05/06/2010WO2010050362A1 Method for manufacturing silicon carbide single crystal
05/06/2010WO2010048900A1 Compound used for thermoelectric material and preparing method thereof
05/06/2010WO2009152503A3 Methods for epitaxial growth of low defect materials
05/06/2010DE19681075B4 Verfahren zur Herstellung von Halbleiterteilchen und Vorrichtung zur Durchführung des Verfahrens Process for the preparation of semiconductor particles and a device for carrying out the method
05/06/2010DE112008001470T5 Prozess zum Herstellen von Silizium-Einkristall und hochdotiertes n-leitendes Halbleitersubstrat Process for the manufacture of silicon single crystal and highly doped n-type semiconductor substrate
05/06/2010DE102008043447A1 Single crystalline gold or palladium nanowire useful in electrical-, optical- or magnetic device or sensors, comprises a vertical or horizontal orientation to a surface of a single crystalline semi-conductive- or non-conductive substrate
05/06/2010DE102005003407B4 Verfahren zur Herstellung von Kolloid-Kristallen oder Kolloid-Partikelsystemen Process for the preparation of colloidal crystals or colloidal particle systems
05/05/2010EP2182558A1 Thermoelectric element, thermoelectric module, and method for manufacturing thermoelectric element
05/05/2010EP2182100A2 High purity semi-insulating single crystal silicon carbide wafer
05/05/2010EP2182099A1 Silica glass crucible having multilayered structure
05/05/2010EP2182098A2 Process for casting columnar grain airfoil with preferential primary orientation
05/05/2010EP2180972A1 Polycrystalline diamond composites
05/05/2010EP1735820B1 Fabrication and use of superlattice
05/05/2010CN201449134U Rotary calcining cooling furnace
05/05/2010CN1942604B Inlet system for an MOCVD reactor
05/05/2010CN101701359A Neodymium-doped lutetium oxyorthosilicate laser crystal and preparation method thereof
05/05/2010CN101701358A Method for preparing high-quality large silicon carbide single crystal and silicon carbide single crystal prepared by same
05/05/2010CN101701357A Growth method of lanthanum titanate crystal coated material
05/05/2010CN101701355A Pulling growth method of neodymium-doped yttrium-calcium aluminate laser crystal
05/05/2010CN101701354A Method for preparing mercury indium telluride single crystal and special quartz crucible thereof
05/05/2010CN101027433B Seed and seedholder combinations for high quality growth of large silicon carbide single crystals
05/04/2010US7709826 Rare earth-oxides, rare earth-nitrides, rare earth-phosphies, and ternary alloys with silicon
05/04/2010US7709103 Phosphor, manufacturing method thereof and light emitting device using the same
05/04/2010US7708830 Method and device for the production of a silicon single crystal, silicon single crystal, and silicon semiconductor wafers with determined defect distributions
05/04/2010US7708829 Method and apparatus for crystal growth
04/2010
04/29/2010WO2010048607A2 Enhanced optical properties of chemical vapor deposited single crystal diamond by low-pressure/high-temperature annealing
04/29/2010WO2010047039A1 Method of determining diameter of single crystal, process for producing single crystal using same, and device for producing single crystal
04/29/2010US20100102330 Nitride semiconductor device having oxygen-doped n-type gallium nitride freestanding single crystal substrate
04/29/2010US20100102277 Stabilized semiconductor nanocrystals
04/29/2010DE112008001160T5 Verfahren zum Herstellen eines Siliziumeinkristalls und Siliziumkristallsubstrat A method for producing a silicon single crystal and the silicon crystal substrate