Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
06/2010
06/24/2010WO2010071142A1 Process for producing single-crystal sapphire
06/24/2010WO2010069046A1 A METHOD TO CONTROL THE DISPERSIBILITY AND BARRIER PROPERTIES OF DRIED NANOCRYSTALLINE CELLULOSE IN SOLUTIONS OF DIFFERENT pH AND IONIC STRENGTH
06/24/2010WO2010043716A3 Method for the controlled growth of a graphene film
06/24/2010WO2009066464A9 Nitride semiconductor and nitride semiconductor crystal growth method
06/24/2010US20100158783 Process and Apparatus for Producing a Single Crystal of Semiconductor Material
06/24/2010US20100154703 Silica glass crucible
06/24/2010DE102008055582A1 MOCVD-Reaktor mit zylindrischem Gaseinlassorgan MOCVD reactor with cylindrical gas inlet element
06/24/2010CA2745475A1 A method to control the dispersibility and barrier properties of dried nanocrystalline cellulose in solutions of different ph and ionic strength
06/23/2010EP2200071A1 GaN single crystal substrate and method of making the same using homoepitaxy
06/23/2010EP2199437A2 Organic semiconductor solution
06/23/2010EP2199436A1 Gan epitaxial substrate, semiconductor device and methods for manufacturing gan epitaxial substrate and semiconductor device
06/23/2010EP2199435A1 Annealed wafer and method for producing annealed wafer
06/23/2010CN201512601U System used in thermal field of cz-si single crystal furnace
06/23/2010CN201512418U Polycrystalline silicon reducing furnace
06/23/2010CN201512417U 30-pair-rod polycrystalline silicon reducing furnace
06/23/2010CN201512416U Bottom heating device for polysilicon ingot furnace
06/23/2010CN101755077A Methods and apparatuses for manufacturing cast silicon from seed crystals
06/23/2010CN101755075A Methods and apparatuses for manufacturing cast silicon from seed crystals
06/23/2010CN101755074A Method and apparatus for depositing nitride film
06/23/2010CN101755066A ultrahard diamond composites
06/23/2010CN101752240A Group iii nitride semiconductor substrate production method, and group iii nitride semiconductor substrate
06/23/2010CN101748489A Method for self-assembling Bi4-xYxTi3O12 ferroelectric film at low temperature
06/23/2010CN101748488A Novel rare-earth Ln-Sialon mono-crystal and preparation method thereof
06/23/2010CN101748487A Method for preparing single crystal perovskite type oxide and application thereof
06/23/2010CN101748486A Production method for blue SA (single alundum)
06/23/2010CN101748485A Preparation method for gallium-doped zinc oxide crystals
06/23/2010CN101748484A Method for solvent-thermally synthesizing nano bismuth oxide single-crystal chips
06/23/2010CN101748483A Germanium melt dross removing device and method
06/23/2010CN101748482A Improvement method for the preparation of highly dense structure polycrystalline silicon and the device thereof
06/23/2010CN101748481A Method for purifying polycrystalline silicon material
06/23/2010CN101748477A Intelligent PID control method for controlling growth process of monocrystalline silicon and system thereof
06/23/2010CN101748476A Special processing method for growing large-size high-quality BBO crystals
06/23/2010CN101748475A Special processing method for growing large-size high-quality LBO crystals
06/23/2010CN101748474A Simple method for preparing linear zinc oxide whiskers
06/23/2010CN101748463A Method for preparing porous titanium dioxide nanotube array
06/23/2010CN101307499B Si3N4 crystal whisker preparation process
06/22/2010US7740702 Silicon wafer and method for manufacturing the same
06/17/2010WO2010068419A2 Production of single crystal cvd diamond rapid growth rate
06/17/2010WO2010066036A1 Redispersible dried nanocrystalline cellulose
06/17/2010WO2010066029A1 Iridescent solid nanocrystalline cellulose films incorporating patterns and method for their production
06/17/2010US20100151661 Nanostructures formed of branched nanowhiskers and methods of producing the same
06/17/2010US20100151248 Fabrication of light emitting film coated fullerenes and their application for in-vivo emission
06/17/2010DE19963941B4 Borat-Einkristall, Verfahren zum Züchten desselben und Verwendung desselben Borate single crystal of the same method of growing and using the same
06/17/2010DE112008001913T5 Halbleitereinkristallproduktionsvorrichtung Semiconductor single crystal production device
06/17/2010DE102008054519A1 Polykristallines germaniumlegiertes Silicium und ein Verfahren zu seiner Herstellung Germaniumlegiertes polycrystalline silicon and a process for its preparation
06/17/2010DE102004039197B4 Verfahren zur Herstellung von dotierten Halbleiterscheiben aus Silizium A process for the production of doped semiconductor wafers of silicon
06/17/2010CA2745479A1 Redispersible dried nanocrystalline cellulose
06/17/2010CA2745474A1 Iridescent solid nanocrystalline cellulose films incorporating patterns and method for their production
06/16/2010EP2197050A1 Process for producing a GaN-based element
06/16/2010EP2197049A1 Process for producing a GaN-based element
06/16/2010EP2196566A1 EPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE
06/16/2010EP2196565A1 Sic epitaxial substrate and process for producing the same
06/16/2010EP2196564A1 Isotope diamond laminate
06/16/2010EP2195475A1 Wafer/ribbon crystal method and apparatus
06/16/2010EP1133345B1 Process and apparatus for size selective separation of micro- and nano-particles
06/16/2010CN201506853U Quartz crucible for polycrystalline ingot furnace
06/16/2010CN201506852U Vertical furnace for growing mercuric iodide single crystals
06/16/2010CN201506851U Seed crystal clamper for mono-crystal furnace
06/16/2010CN201506848U Polycrystalline silicon rod and connecting component
06/16/2010CN201506711U Crucible for casting ingot
06/16/2010CN201506710U Segregation mold prepared by silicon-melting approach for solar grade polycrystalline silicon
06/16/2010CN201506709U Crystallizer for polycrystalline silicon purification furnace
06/16/2010CN201506708U Thermal field structure for polycrystalline ingot production furnace
06/16/2010CN1993503B Method for growing monocrystals from melt
06/16/2010CN1961259B Fabrication and use of superlattice
06/16/2010CN1804116B Highly-oriented diamond film, method for manufacturing the same, and applicaiton thereof
06/16/2010CN101743346A Method for producing group iii nitride single crystal
06/16/2010CN101743211A inverse colloidal crystals
06/16/2010CN101743091A Polycrystalline diamond composites
06/16/2010CN101736404A Co-production method of calcium sulfate whisker and phosphoric acid
06/16/2010CN101736403A Method for preparing calcium sulfate crystal whiskers by using impurity-containing gypsum as raw material
06/16/2010CN101736402A Method for preparing bamboo-shaped three-dimensional branched nano-wire
06/16/2010CN101736401A Method and device for growing germanium crystal
06/16/2010CN101736400A Method for growing GaN-based luminous crystal film by metal organic chemical vapor deposition
06/16/2010CN101736399A Method for preparing tin oxide single crystal film with orthogonal structure
06/16/2010CN101736398A Method for growing AlInN monocrystal epitaxial film
06/16/2010CN101736396A 3'' *9''tabular alumina monocrystal grown by film fed growth method
06/16/2010CN101736394A Flame fusion furnace for growing optics-level rutile monocrystal
06/16/2010CN101736354A Method for preparing one or more of silicon nano power, silicon nanowires and silicon nanotubes by electrochemical method
06/16/2010CN101735283A Cocrystallization technology of glucosamine hydrochloride and glucosamine potassium/sodium sulfate
06/16/2010CN101734663A Technology for improving polycrystalline silicon quality
06/16/2010CN101331591B Alxgayin1-x-yn crystal substrate, semiconductor device, and method for manufacturing the same
06/16/2010CN101318694B Method for preparing titanium dioxide nanocrystalline with highlight catalytic activity in low-temperature
06/16/2010CN101311347B Silicon with three-dimensional depression structure and method for preparing same
06/16/2010CN101311337B Process for preparing calcium sulphate whiskers by using flue gas desulfurization gypsum
06/16/2010CN101302648B 氮化镓薄膜外延生长结构及方法 Epitaxial growth of GaN film structure and method
06/16/2010CA2646850A1 Method for preparing size-controlled silicon carbide nanocrystals
06/15/2010US7736433 BaTiO3—PbTiO3 series single crystal and method of manufacturing the same, piezoelectric type actuator and liquid discharge head using such piezoelectric type actuator
06/10/2010WO2010064604A1 Silicon for n-type solar cell and process for producing phosphorus-doped silicon
06/10/2010WO2010064566A1 Method of growing gallium nitride crystals and process for producing gallium nitride crystals
06/10/2010WO2010064356A1 Single crystal manufacturing method and single crystal manufacturing apparatus
06/10/2010WO2010064354A1 Upper heater for manufacturing single crystal, single crystal manufacturing apparatus and single crystal manufacturing method
06/10/2010WO2010063636A1 Ingot formed from basic ingots, wafer made from said ingot, and associated method
06/10/2010WO2010063105A1 Cathode materials for low temperature solid oxide fuel cells (sofcs)
06/10/2010WO2009153116A3 Diamond nano-tip and method for production thereof
06/10/2010US20100143184 Method for manufacturing metal nanorods and use thereof
06/10/2010US20100140755 Rare-earth oxides, rare-earth nitrides, rare-earth phosphides and ternary alloys
06/10/2010DE102008060520A1 Ein Tiegel zur Prozessierung hochschmelzender Materialien A crucible for the processing of refractory materials
06/09/2010EP2194169A1 Method for growing group iii nitride crystal
06/09/2010EP2194168A1 Silicon single crystal growing method, silicon wafer and soi substrate using such silicon wafer
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