C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth

Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
11/2009
11/10/2009	US7615116 Method for producing silicon epitaxial wafer and silicon epitaxial wafer
11/05/2009	US20090274883 Nitride semiconductor substrate and method for forming the same
11/03/2009	US7612361 Method of growing a nitride single crystal on silicon wafer, nitride semiconductor light emitting diode manufactured using the same and the manufacturing method
11/03/2009	US7611586 Reactor for extended duration growth of gallium containing single crystals
10/2009
10/29/2009	WO2009130375A1 Apparatus and methods for deposition reactors
10/29/2009	US20090267190 Freestanding III-Nitride Single-Crystal Substrate and Method of Manufacturing Semiconductor Device Utilizing the Substrate
10/28/2009	EP2112254A2 Silicon substrate and manufacturing method thereof
10/28/2009	CN101568671A GaN epitaxial substrate, semiconductor device and methods for manufacturing GaN epitaxial substrate and semiconductor device
10/28/2009	CN100555572C Method for manufacturing semiconductor device
10/27/2009	US7608147 Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them
10/25/2009	CA2663779A1 Freestanding iii-nitride single-crystal substrate and method of manufacturing semiconductor device utilizing the substrate
10/22/2009	US20090263955 GaN single crystal substrate and method of making the same
10/22/2009	DE102008001005A1 Method for the production of layered composite with epitactically grown layer made of magnetic shape-memory material, comprises subjecting a sacrificial layer on one- or multilayered substrate
10/21/2009	EP2109896A2 Methods of depositing epitaxial thermoelectric films having reduced crack and/or surface defect densities and related devices
10/21/2009	CN101562205A Nano-structure and a manufacturing method thereof
10/21/2009	CN101560694A Controllable preparation method for silicideb nanometer belts/nanometer sheets
10/21/2009	CN101560692A Growth method of non-polar plane InN material
10/21/2009	CN101560647A Preparation method of GaN-based material featuring epitaxial layer growth
10/20/2009	US7605093 Method of fabricating iridium-based materials and structures on substrates, and iridium source reagents therefor
10/20/2009	US7605060 Method of epitaxial deoposition of an n-doped silicon layer
10/20/2009	US7604697 Heteroepitaxial growth method for gallium nitride
10/20/2009	CA2412855C Thick single crystal diamond layer method for making it and gemstones produced from the layer
10/15/2009	WO2009085376A3 Separate injection of reactive species in selective formation of films
10/15/2009	US20090256162 Method for Producing Semi-Insulating Resistivity in High Purity Silicon Carbide Crystals
10/15/2009	US20090255459 Method for making zinc oxide nano-structrure
10/14/2009	EP2108195A1 Electronic field effect devices and methods for their manufacture
10/14/2009	EP2108063A2 Diamond electronic devices and methods for their manufacture
10/14/2009	EP2108062A2 Diamond electronic devices including a surface and methods for their manufacture
10/14/2009	EP2108054A1 Plasma etching of diamond surfaces
10/14/2009	EP1581675B1 A template type substrate and a method of preparing the same
10/14/2009	CN201326029Y Electrode gap adjusting device
10/14/2009	CN101555627A Laser peeling method of gallium nitride-based epitaxial film
10/14/2009	CN101555622A Low temperature catalysis and synthesis method of tungsten monocrystalline whisker
10/14/2009	CN100549243C Method for epitaxial growing AlxGa1-xN single crystal film on saphire lining bottom material
10/14/2009	CN100549225C Cooling device, and apparatus and method for manufacturing image display panel using cooling device
10/13/2009	US7601986 Epitaxial semiconductor structures having reduced stacking fault nucleation sites
10/13/2009	US7601224 Method of supporting a substrate in a gas cushion susceptor system
10/13/2009	US7601217 Method of fabricating an epitaxially grown layer
10/13/2009	US7601216 Gas diffusion electrodes, membrane-electrode assemblies and method for the production thereof
10/08/2009	WO2009122113A2 Method for producing nanostructures on metal oxide substrate, method for depositing thin film on same, and thin film device
10/08/2009	US20090252942 Method for Manufacturing Epitaxial Wafer and Epitaxial Wafer
10/07/2009	EP2107597A1 Gallium nitride crystal
10/07/2009	EP2107138A2 Apparatus for producing silicon carbide single crystal
10/07/2009	EP1025278B1 Vertically-stacked process reactor and cluster tool system for atomic layer deposition
10/07/2009	CN101553606A Reactor for growing crystals
10/07/2009	CN101550592A Method for preparing iron silicide nano wires
10/07/2009	CN101550590A Apparatus for growing multilayered epitaxial layer
10/07/2009	CN100547721C Deposition technique for producing high quality compound semiconductor materials
10/06/2009	CA2311061C Molecular beam epitaxy (mbe) growth of semi-insulating c-doped gan
10/01/2009	WO2009120343A1 Selective oxidative removal of a self-assembled monolayer for controlled nanofabrication
10/01/2009	WO2009118353A2 Metallic nanocrystal encapsulation
10/01/2009	US20090242898 Method of controlling stress in gallium nitride films deposited on substrates
09/2009
09/30/2009	EP2105523A1 Epitaxial silicon wafer and method for its manufacturing
09/30/2009	EP2104754A1 Production of single-crystal semiconductor material using a nanostructure template
09/30/2009	EP1345260B1 Vapor growth method, semiconductor producing method, and production method for semiconductor device
09/30/2009	CN201317830Y Micro-area controllable nano-functional material synthesis heating device
09/30/2009	CN101548032A Low-temperature doping processes for silicon wafer devices
09/30/2009	CN101545136A Micro-heater arrays and PN-junction devices having micro-heater arrays, and methods for fabricating the same
09/30/2009	CN100545303C Alkyl push flow for vertical flow rotating disk reactors
09/29/2009	US7595260 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
09/29/2009	US7594967 Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy
09/24/2009	US20090239097 Fabrication of Heterojunction Structures
09/24/2009	US20090235862 Method of manufacturing zinc oxide nanowires
09/24/2009	DE102008027984A1 Substratkassette mit Elektrodenarray Substrate cassette with electrode array
09/23/2009	EP2103720A1 Susceptor for vapor phase epitaxial growth device
09/23/2009	EP2102899A1 Nitride nanowires and method of producing such
09/23/2009	CN101542024A Production of single-crystal semiconductor material using a nanostructure template
09/23/2009	CN101538740A AlGaN film material and growing method thereof
09/23/2009	CN101538738A Secondary growth method for high-quality ZnO single-crystal thick films on sapphire substrates
09/23/2009	CN101538737A Method for growing high-crystal-quality ZnO nano-rods by utilizing p-type doped silicon substrates
09/23/2009	CN100543179C Process kit design for deposition chamber
09/22/2009	US7592619 Epitaxy layer and method of forming the same
09/22/2009	US7591908 Vapor deposition apparatus and vapor deposition method
09/22/2009	US7591897 Method for the rapid synthesis of large quantities of metal oxide nanowires at low temperatures
09/17/2009	US20090233423 Method of manufacturing nitride semiconductor substrate
09/16/2009	EP2100989A1 Method for preparing substrate having monocrystalline film
09/16/2009	EP1608794B1 Apparatus for depositing compounds on a substrate by means of metalorganic chemical vapor deposition
09/16/2009	EP0835336B2 A device and a method for epitaxially growing objects by cvd
09/15/2009	US7589358 high quality nitride phosphor substrate manufactured by crystallization from supercritical ammonia-containing solution; light emitting devices; wavelength distribution emitting a white light and a good yield
09/15/2009	US7589345 Nitride-based compound semiconductor substrate and method for fabricating the same
09/15/2009	US7589001 Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method
09/15/2009	CA2469150C Boron doped diamond
09/11/2009	WO2009111245A1 Method and apparatus for growth of high purity 6h-sic single crystal
09/11/2009	WO2009110436A1 Nitride semiconductor crystal and manufacturing method thereof
09/10/2009	US20090226680 Process for modifying the properties of a thin layer and substrate applying said process
09/10/2009	US20090223442 Methods for high volume manufacture of group iii-v semiconductor materials
09/10/2009	US20090223441 High volume delivery system for gallium trichloride
09/09/2009	EP2099063A1 Film forming apparatus and method of forming film
09/09/2009	EP2097934A2 Iii-nitride light emitting devices grown on templates to reduce strain
09/09/2009	EP1533833B1 Vapor phase epitaxy device
09/09/2009	EP1397528B8 Cvd reactor with exhaust ring made of graphite
09/09/2009	EP1123562B1 Layer processing
09/09/2009	CN101528991A Sapphire substrate, nitride semiconductor luminescent element using the sapphire substrate, and method for manufacturing the nitride semiconductor luminescent element
09/09/2009	CN101525767A One-dimensional nano single-crystal tubular silicon carbide as well as preparation method and application thereof
09/09/2009	CN101525766A Method for preparing magnetic nano-particle periodically-packed boron-nitride bamboo-like nano-tubes
09/09/2009	CN100539027C Epitaxially growing equipment
09/08/2009	US7585752 Process for deposition of semiconductor films
09/08/2009	US7585371 Substrate susceptors for receiving semiconductor substrates to be deposited upon
09/08/2009	CA2543151C Gan substrate, method of growing gan and method of producing gan substrate
09/08/2009	CA2475966C Crystal production method

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