C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth

Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
01/2010
01/07/2010	DE102004053307B4 Mehrschichtenstruktur umfassend ein Substrat und eine darauf heteroepitaktisch abgeschiedene Schicht aus Silicium und Germanium und ein Verfahren zu deren Herstellung Multilayered structure comprising a substrate and a heteroepitaxial layer deposited from silicon and germanium, and a process for their preparation
01/06/2010	EP2141267A1 Process for producing group iii nitride crystal
01/06/2010	CN100578734C Process and system for heating semiconductor substrates in a processing chamber containing susceptor
01/06/2010	CN100577894C Large area, uniformly low dislocation density GaN substrate and process for making the same
01/05/2010	US7641988 Comprises an epitaxial nitride layer with a light-emitting device structure formed on the above self-supported nitride semiconductor substrate; having large light emission with a low driving voltage; gallium nitride
01/05/2010	US7641939 Chemical vapor deposition reactor having multiple inlets
12/2009
12/31/2009	US20090321884 Method of fabricating an epitaxially grown layer
12/31/2009	US20090320746 Method for producing group iii-v compound semiconductor
12/30/2009	EP1599621B1 Wear component comprising single crystal cvd diamond
12/30/2009	EP1444390B1 Apparatus and method for diamond production
12/30/2009	CN100576503C A method of preparation of an epitaxial substrate
12/30/2009	CN100576449C Method for manufacturing compound semiconductor epitaxial substrate
12/30/2009	CN100576370C Method of producing biaxially textured buffer layers and related articles, devices and systems
12/30/2009	CN100575843C Polycrystalline silicon reducing furnace water-cooling double glass viewing mirror
12/30/2009	CN100575565C Method for preparing aluminum nitride thin film on lithium aluminate wafer surface under low temperature
12/24/2009	US20090315149 Manufacturing method of nitride substrate, nitride substrate, and nitride-based semiconductor device
12/24/2009	US20090314210 Epitaxial growth susceptor
12/23/2009	WO2009155414A1 Microwave-assisted synthesis of carbon and carbon-metal composites from lignin, tannin and asphalt derivatives
12/23/2009	WO2009154577A1 Method for growing monocrystalline diamonds
12/23/2009	WO2009153116A2 Diamond nano-tip and method for production thereof
12/23/2009	CN101608339A Method for 4H-SiC selective homoepitaxy growth
12/22/2009	US7635868 Silicon carbide epitaxial wafer, method for producing such wafer, and semiconductor device formed on such wafer
12/22/2009	CA2385621C Method and apparatus for growing silicon carbide crystals
12/17/2009	WO2009152503A2 Methods for epitaxial growth of low defect materials
12/17/2009	WO2009150297A1 Arrangement in connection with ald reactor
12/17/2009	WO2009118353A3 Metallic nanocrystal encapsulation
12/17/2009	US20090309189 Method for the growth of indium nitride
12/17/2009	US20090309127 Selective area epitaxy growth method and structure
12/17/2009	DE102008027521A1 Verfahren zum Herstellen einer Halbleiterschicht A method of manufacturing a semiconductor layer
12/16/2009	EP2133450A1 Substrate for epitaxial growth and method for producing nitride compound semiconductor single crystal
12/16/2009	EP2132142A2 A process for the synthesis of nanotubes and fullerene-like nanostructures of transition metals dichalcogenides, quasi one-dimensional structures of transition metals and oxides of transition metals
12/16/2009	CN101605930A N-type conductive aluminum nitride semiconductor crystal and method for producing the same
12/16/2009	CN101603200A Preparation method of tungsten crystal whisker array with controllable diameter and length
12/15/2009	US7632697 Nitride semiconductor thin film and method for growing the same
12/15/2009	US7632351 Atomic layer deposition processes for the formation of ruthenium films, and ruthenium precursors useful in such processes
12/10/2009	DE102008026784A1 Epitaxierte Siliciumscheibe mit <110>-Kristallorientierung und Verfahren zu ihrer Herstellung Epitaxial silicon wafer with <110> crystal orientation and process for their preparation
12/09/2009	EP2130953A2 Epitaxial silicon wafer and method for producing the same
12/09/2009	EP2129815A1 Method and device for the production of a compound semiconductor material by means of gas phase epitaxy
12/09/2009	EP1491255B1 Method for carrying out homogeneous and heterogeneous chemical reactions using plasma
12/09/2009	CN101600819A Method for manufacturing a single crystal of nitride by epitaxial growth on a substrate preventing growth on the edges of the substrate
12/09/2009	CN101597789A Electrostatic holding device and semiconductor process equipment applying same
12/09/2009	CN100568453C Plasma processing apparatus, gas dispensing device and gas delivery method
12/08/2009	US7629625 Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device
12/08/2009	US7628974 Control of carbon nanotube diameter using CVD or PECVD growth
12/08/2009	US7628855 Atomic layer deposition using electron bombardment
12/03/2009	WO2009144371A1 Methods and apparatus for deposition reactors
12/03/2009	US20090298265 Method of Manufacturing III Nitride Crystal, III Nitride Crystal Substrate, and Semiconductor Device
12/03/2009	US20090294775 Hexagonal wurtzite type epitaxial layer possessing a low alkali-metal concentration and method of creating the same
12/03/2009	US20090294774 MANUFACTURING METHOD OF GaN THIN FILM TEMPLATE SUBSTRATE, GaN THIN FILM TEMPLATE SUBSTRATE AND GaN THICK FILM SINGLE CRYSTAL
12/02/2009	EP2128309A1 Method of manufacturing III nitride crystal, III nitride crystal substrate, and semiconductor device
12/02/2009	EP2127733A1 Hydrogen permeable film and method for manufacturing the same
12/02/2009	EP2126984A2 Iii-nitride light emitting diodes grown on templates to reduce strain
12/02/2009	EP2126963A1 Semiconductor heterostructures and manufacturing thereof
12/02/2009	EP2126162A1 New laser uses for single-crystal cvd diamond
12/02/2009	EP2126161A1 Device and method for selectively depositing crystalline layers using mocvd or hvpe
12/02/2009	CN101591811A Method for preparing III-V compound semiconductor nanotube structure material by GSMBE
12/02/2009	CN101591810A Method of manufacturing III nitride crystal, III nitride crystal substrate, and semiconductor device
12/02/2009	CN101591803A High-temperature carborundum double-chamber hot wall type epitaxial growth device
12/02/2009	CN100565783C Electric device containing at least four semiconductor nano wire
12/02/2009	CN100564617C In-situ corrosion method for reducing HVPE GaN thin film dislocation density
12/01/2009	US7625448 Inlet system for an MOCVD reactor
11/2009
11/28/2009	CA2666034A1 Method of manufacturing iii nitride crystal, iii nitride crystal substrate, and semiconductor device
11/26/2009	WO2009142311A1 Group iii nitride semiconductor laminate structure and process for producing the group iii nitride semiconductor laminate structure
11/26/2009	WO2009122113A3 Method for producing nanostructures on a metal oxide substrate and thin film device
11/26/2009	US20090289330 Group iii nitride semiconductor substrate, substrate for group iii nitride semiconductor device, and methods of making same
11/26/2009	US20090289270 Group iii nitride semiconductor multilayer structure and production method thereof
11/26/2009	US20090289035 Plasma Processing Apparatus And Plasma Processing Method
11/25/2009	EP2123802A1 N-type conductive aluminum nitride semiconductor crystal and method for producing the same
11/25/2009	EP2123801A1 Method and equipment for producing group-iii nitride
11/25/2009	EP2122017A1 Reactor for growing crystals
11/25/2009	EP2122015A1 Method for manufacturing a single crystal of nitride by epitaxial growth on a substrate preventing growth on the edges of the substrate
11/25/2009	CN101586229A Magnetron sputtering apparatus and film manufacturing method
11/25/2009	CN100562976C Vapor-phase epitaxial growth method and vapor-phase epitaxy apparatus
11/24/2009	US7622791 III-V group nitride system semiconductor substrate
11/24/2009	US7622398 Semiconductor device, semiconductor layer and production method thereof
11/24/2009	US7622363 Semiconductor substrate, semiconductor device, light emitting diode and producing method therefor
11/24/2009	US7622318 Method for producing structured substrate, structured substrate, method for producing semiconductor light emitting device, semiconductor light emitting device, method for producing semiconductor device, semiconductor device, method for producing device, and device
11/19/2009	US20090286063 Method and apparatus for fabricating crack-free group iii nitride semiconductor materials
11/19/2009	US20090283216 Method of and apparatus for manufacturing semiconductor device
11/19/2009	US20090283041 Solid organometallic compound-filled container and filling method thereof
11/19/2009	US20090283029 Abatement of reaction gases from gallium nitride deposition
11/19/2009	DE102008023054A1 Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe A process for producing an epitaxially coated semiconductor wafer,
11/18/2009	EP2119815A1 Method for producing self-supporting nitride semiconductor substrate and self-supporting nitride semiconductor substrate
11/18/2009	EP2118335A1 High uniformity boron doped diamond material
11/18/2009	CN100560811C Nanometer silicon wire structure and its growth process
11/18/2009	CN100560792C Growth of very uniform silicon carbide epitaxial layers
11/17/2009	US7619290 Nanosensors
11/12/2009	US20090281344 semiconductors; low dielectric thin films; chemical vapor deposition
11/12/2009	US20090278114 Control of carbon nanotube diameter using cvd or pecvd growth
11/12/2009	US20090277390 Source, an Arrangement for Installing a Source, and a Method for Installing and Removing a Source
11/12/2009	US20090277376 Method for producing an epitaxially coated semiconductor wafer
11/11/2009	EP2116636A2 Freestanding III-nitride single-crystal substrate and method of manufacturing semiconductor device utilizing the substrate
11/11/2009	CN201343581Y Extension device
11/11/2009	CN101578744A AlGaInN-based lasers produced using etched facet technology
11/11/2009	CN101578398A Process for producing group iii nitride crystal
11/11/2009	CN101575701A Method for producing an epitaxially coated semiconductor wafer
11/11/2009	CN100558947C Method for growing indium nitride monocrystal thin films
11/10/2009	US7615390 Method and apparatus for forming expitaxial layers
11/10/2009	US7615204 Direct synthesis of long single-walled carbon nanotube strands
11/10/2009	US7615121 Susceptor system

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