| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 03/31/2010 | CN101684549A Method for manufacturing nitride semiconductor device |
| 03/30/2010 | US7687888 Semiconductor film with graded gallium nitride layer deposited on the substrate having a varying composition of a continuous grade from an initial to a final composition formed from a precursor without interruption in the supply |
| 03/30/2010 | US7687827 III-nitride materials including low dislocation densities and methods associated with the same |
| 03/30/2010 | US7687824 Method of improving surface flatness of group-III nitride crystal, substrate for epitaxial growth, and semiconductor device |
| 03/30/2010 | US7687382 Method of making group III nitride-based compound semiconductor |
| 03/30/2010 | US7686886 Controlled shape semiconductor layer by selective epitaxy under seed structure |
| 03/25/2010 | WO2010033304A2 Solar cells fabricated by using cvd epitaxial si films on metallurgical-grade si wafers |
| 03/24/2010 | EP2165006A1 Device for coating substrates disposed on a susceptor |
| 03/24/2010 | CN201428008Y Chemical vapor deposition device for polysilicon |
| 03/24/2010 | CN101681871A Device for coating a plurality of closest-packed substrates arranged on a susceptor |
| 03/24/2010 | CN101681813A Nitride nanowires and method of producing the same |
| 03/24/2010 | CN101680114A Method for manufacturing gan-based nitride semiconductor self-supporting substrate |
| 03/24/2010 | CN101680092A Device for the temperature control of the surface temperatures of substrates in a CVD reactor |
| 03/23/2010 | US7682943 Nanostructures and methods for manufacturing the same |
| 03/23/2010 | US7682657 Sequential chemical vapor deposition |
| 03/23/2010 | US7682449 Heterostructure semiconductor nanowires and method for producing the same |
| 03/23/2010 | CA2431084C Multiple source deposition process |
| 03/18/2010 | WO2010030805A1 Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture |
| 03/18/2010 | US20100068381 Chemical vapor deposition reactor having multiple inlets |
| 03/18/2010 | US20100064966 Method of growing zinc-oxide-based semiconductor and method of manufacturing semiconductor light emitting device |
| 03/17/2010 | CN101671842A Method for growing Na-N co-doping p-type ZnO crystal film by annealing |
| 03/16/2010 | US7678645 Formation of thin semiconductor layers by low-energy plasma enhanced chemical vapor deposition and semiconductor heterostructure devices |
| 03/16/2010 | CA2411606C Preparation method of a coating of gallium nitride |
| 03/11/2010 | WO2010027044A1 Substrate, substrate provided with epitaxial layer and methods for manufacturing the substrates |
| 03/11/2010 | WO2010009325A3 Growth of semi-polar (11-22) or (10-13) gallium nitride with hydride vapor phase epitaxy |
| 03/11/2010 | DE19581483B4 Verfahren und Vorrichtung zur Bildung von Dünnschichten Method and apparatus for formation of thin films |
| 03/11/2010 | DE102008060372A1 Method for producing a silicon carbide-epitaxial layer on a single crystalline silicon carbide substrate by chemical gas phase deposition |
| 03/10/2010 | EP2160759A1 Device for coating a plurality of closest-packed substrates arranged on a susceptor |
| 03/10/2010 | CN101665978A Doping methods in vapor phase epitaxy technique and devices thereof |
| 03/09/2010 | US7674715 Method for forming tungsten materials during vapor deposition processes |
| 03/09/2010 | US7674699 III group nitride semiconductor substrate, substrate for group III nitride semiconductor device, and fabrication methods thereof |
| 03/09/2010 | US7674335 Method of producing high quality relaxed silicon germanium layers |
| 03/04/2010 | WO2010023516A1 Uv absorption based monitor and control of chloride gas stream |
| 03/02/2010 | US7670945 In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application |
| 03/02/2010 | US7670944 Conformal lining layers for damascene metallization |
| 03/02/2010 | US7670933 method of nanowire-templated lateral epitaxial growth employs crystallographically aligned, substantially vertical Group III nitride nanowire arrays grown by metal-catalyzed metal-organic chemical vapor deposition as templates for lateral growth and coalescence of virtually crack-free films |
| 03/02/2010 | US7670435 Apparatus for epitaxially growing semiconductor device structures with sharp layer interfaces utilizing HVPE |
| 03/02/2010 | US7670434 Vapor phase growth apparatus |
| 02/24/2010 | EP2155926A1 Device for the temperature control of the surface temperatures of substrates in a cvd reactor |
| 02/24/2010 | EP2155923A1 Method and device for preparing a multilayered coating on a substrate |
| 02/24/2010 | CN101657569A Method and device for the production of a compound semiconductor material by means of gas phase epitaxy |
| 02/23/2010 | US7667298 Oxygen-doped n-type gallium nitride freestanding single crystal substrate |
| 02/23/2010 | US7667162 Semiconductor thermal process control utilizing position oriented temperature generated thermal mask |
| 02/23/2010 | US7666799 Epitaxial growth of relaxed silicon germanium layers |
| 02/23/2010 | US7666708 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices |
| 02/18/2010 | US20100037825 Differentiated-temperature reaction chamber |
| 02/17/2010 | EP2154272A1 Method for manufacturing semiconductor crystal of nitride of element belonging to group-iii, semiconductor substrate formed of nitride of element belonging to group-iii, and semiconductor light emission device |
| 02/17/2010 | EP2154271A1 Method and apparatus for growing III-nitride-bulk crystals |
| 02/17/2010 | EP2154270A2 Non-polar a-plane gallium nitride thin films grown by metalorganic chemical vapor deposition |
| 02/17/2010 | CN100590236C Device and method for growing zinc oxide film |
| 02/16/2010 | US7662441 High-speed diamond growth using a microwave plasma in pulsed mode |
| 02/16/2010 | US7662427 organic films can be chemical vapor deposited on all surfaces of the substrate provided with the scintillator, and the substrate can easily be taken up from the turntable after the organic films of polyxylene are deposited; waterproof coating |
| 02/16/2010 | US7662233 ALD apparatus and method |
| 02/11/2010 | US20100032008 Zinc oxide multi-junction photovoltaic cells and optoelectronic devices |
| 02/11/2010 | US20100031885 Reactor For Growing Crystals |
| 02/09/2010 | US7659190 Method for producing a Group III-V compound semiconductor |
| 02/09/2010 | US7658798 Method for fixing metal particles and method for manufacturing substrate containing metal particles, method for manufacturing substrate containing carbon nanotube, and method for manufacturing substrate containing semiconductor-crystalline rod, employing thereof |
| 02/04/2010 | WO2010012863A1 Atomic layer deposition apparatus and loading methods |
| 02/04/2010 | US20100028235 Synthesis and Processing of Rare-Earth Boride Nanowires as Electron Emitters |
| 02/04/2010 | US20100024719 Tracking carbon to silicon ratio in situ during silicon carbide growth |
| 02/03/2010 | CN100587132C Method for doping oxygen to gallium nitride crystal and oxygen-doped n-type gallium nitride single crystal substrate |
| 02/03/2010 | CN100587128C Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers |
| 02/02/2010 | US7655960 A1xInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing same |
| 02/02/2010 | US7655491 P-type Group III nitride semiconductor and production method thereof |
| 02/02/2010 | US7655490 Manufacturing method for semiconductor device, semiconductor device and semiconductor wafer |
| 02/02/2010 | US7655197 III-V nitride substrate boule and method of making and using the same |
| 02/02/2010 | US7655090 Method of controlling stress in gallium nitride films deposited on substrates |
| 01/28/2010 | WO2010010352A1 Diamond material |
| 01/28/2010 | US20100022012 Nanosensors |
| 01/28/2010 | US20100019273 Method for producing structured substrate, structured substrate, method for producing semiconductor light emitting device, semiconductor light emitting device, method for producing semiconductor device, semiconductor device, method for producing device, and device |
| 01/28/2010 | CA2725084A1 Diamond material |
| 01/27/2010 | EP1313134B1 Semiconductor polysilicon component and method of manufacture thereof |
| 01/26/2010 | US7652288 Epitaxial and polycrystalline growth of Si1-X-YGEXCY and Si1-YCY alloy layers on Si by UHV-CVD |
| 01/26/2010 | US7651927 Semiconductor device and method for fabricating the same |
| 01/21/2010 | WO2010009325A2 Growth of planar non-polar {1-1 0 0} m-plane and semi-polar {1 1-2 2} gallium nitride with hydride vapor phase epitaxy (hvpe) |
| 01/21/2010 | US20100012972 Silicon-Germanium Hydrides and Methods for Making and Using Same |
| 01/21/2010 | US20100012030 Process for Deposition of Semiconductor Films |
| 01/21/2010 | US20100012022 Diamond Uses/Applications Based on Single-Crystal CVD Diamond Produced at Rapid Growth Rate |
| 01/21/2010 | US20100012021 Epitaxial growth and cloning of a precursor chiral nanotube |
| 01/21/2010 | DE102009023983A1 Siliciumepitaxialwafer und das Herstellungsverfahren dafür Siliciumepitaxialwafer and the production method thereof |
| 01/21/2010 | DE102008034260A1 Verfahren zum Abscheiden einer Schicht auf einer Halbleiterscheibe mittels CVD und Kammer zur Durchführung des Verfahrens A method for depositing a layer on a semiconductor wafer by CVD chamber and for performing the method |
| 01/20/2010 | EP2146384A1 Method of making a laser diode |
| 01/20/2010 | EP2145987A1 Fabrication method of a group III nitride crystal substance |
| 01/20/2010 | EP2145975A2 Perovskite oxide, oxide composition, oxide body, piezoelectric device, and liquid discharge apparatus |
| 01/20/2010 | CN101631901A Device and method for selectively depositing crystalline layers using MOCVD or HVPE |
| 01/20/2010 | CN100583395C Semiconductor device and its manufacture method |
| 01/20/2010 | CN100582298C Process and apparatus for depositing semiconductor layers using two process gases, one of which is preconditioned |
| 01/19/2010 | US7648579 Substrate support system for reduced autodoping and backside deposition |
| 01/19/2010 | US7648577 MBE growth of p-type nitride semiconductor materials |
| 01/14/2010 | WO2010004964A1 Gan crystal substrate, gan crystal substrate manufacturing method, gan crystal substrate provided with semiconductor epitaxial layer, semiconductor device and semiconductor device manufacturing method |
| 01/14/2010 | WO2010003922A1 Method for making nanodiamond grains by homogenous nucleation in a plasma |
| 01/14/2010 | WO2010003179A1 A method of fabricating a material |
| 01/14/2010 | US20100006836 Epitaxial growth method, epitaxial crystal structure, epitaxial crystal growth apparatus, and semiconductor device |
| 01/14/2010 | DE102008032171A1 Verfahren zum Herstellen einer einkristallinen Schicht A method of manufacturing a single crystalline layer |
| 01/13/2010 | EP2143832A2 Method and reactor for preparing films and devices under high nitrogen chemical potential |
| 01/13/2010 | CN101624722A Gas distributing plate and apparatus for treating substrate including the same |
| 01/13/2010 | CN100580881C Nitride semiconductor device and method for manufacturing same |
| 01/12/2010 | US7646038 Method of fabricating heteroepitaxial microstructures |
| 01/12/2010 | US7645517 Rare earth-oxides, rare earth nitrides, rare earth phosphides and ternary alloys with silicon |
| 01/12/2010 | US7645340 Vapor phase growth method for A1-containing III-V group compound semiconductor, and method and device for producing A1-containing III-V group compound semiconductor |