Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001) |
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08/11/2005 | WO2005064783A3 Tuneable spin torque device for generating an oscillating signal and method for tuning |
08/11/2005 | US20050176206 Method and system for forming a contact in a thin-film device |
08/11/2005 | US20050174876 Semiconductor storage device and production method therefor |
08/11/2005 | US20050174875 Semiconductor storage device |
08/11/2005 | US20050174854 Memory device |
08/11/2005 | US20050174837 Logic-in-memory circuit using magnetoresistive element |
08/11/2005 | US20050174834 Magnetic tunneling junction cell having a free magnetic layer with a low magnetic moment and magnetic random access memory having the same |
08/11/2005 | US20050174821 Multi-stage per cell magnetoresistive random access memory |
08/11/2005 | US20050174701 Current-perpendicular-to-plane magnetoresistive sensor with free layer stabilized against vortex magnetic domains generated by the sense current |
08/11/2005 | US20050174692 Magnetoresistive sensor having a pinned layer in multilayer structure |
08/11/2005 | US20050174112 Magnetic sensor apparatus and manufacturing method thereof |
08/11/2005 | US20050173698 Multilayer dielectric tunnel barrier used in magnetic tunnel junction devices, and its method of fabrication |
08/11/2005 | US20050172480 A fabricating method for a fluxgate sensor integrated in printed circuit board |
08/11/2005 | DE102004060645A1 Weichreferenz-Vierleiter-Magnetspeichervorrichtung Soft reference four-wire magnetic memory device |
08/11/2005 | DE10134866B4 Verfahren zum horizontalen Wachsenlassen von Kohlenstoff-Nanoröhren und Feldeffekttransistor, der die durch das Verfahren gewachsenen Kohlenstoff-Nanoröhren verwendet Method for horizontally growing carbon nanotubes and field effect transistor using the grown by the method of carbon nanotubes |
08/10/2005 | CN1653550A Resistive memory elements with reduced roughness |
08/10/2005 | CN1653549A Method of manufacturing MRAM offset cells in a damascene structure |
08/10/2005 | CN1652371A Hall circuitboard for DC brushless electric machine |
08/10/2005 | CN1652249A Method of forming nano-sized MTJ cell without contact hole |
08/10/2005 | CN1651928A Magnetic sensor and method of producing the same |
08/10/2005 | CN1214414C Method of mfg. magnetic tunnel junction device |
08/10/2005 | CN1214131C Dual chamber ion beam sputter deposition system |
08/09/2005 | US6928015 Thin film magnetic memory device and semiconductor integrated circuit device including the same as one of circuit blocks |
08/09/2005 | US6927996 Magnetic memory device |
08/09/2005 | US6927952 CPP GMR free layer having ferromagnetic layers with parallel magnetization separated by non-magnetic layer |
08/09/2005 | US6927948 Differential CPP GMR sensor with free layers separated by metal gap layer |
08/09/2005 | US6927468 Magnetic random access memory |
08/09/2005 | US6927467 Magnetoresistive memory device and method for fabricating the same |
08/09/2005 | US6927466 Magnetoresistive memory or sensor devices having improved switching properties and method of fabrication |
08/09/2005 | US6927092 Method of forming a shared global word line MRAM structure |
08/09/2005 | US6927075 Magnetic memory with self-aligned magnetic keeper structure |
08/09/2005 | US6927074 Asymmetric memory cell |
08/04/2005 | WO2003036734A3 Magnetoresistance effect element, magetic memory element, magnetic memory device, and their manufacturing method |
08/04/2005 | US20050170628 Forming a contact in a thin-film device |
08/04/2005 | US20050170533 Magnetic tunnel junction device with a compositionally modulated electrode |
08/04/2005 | US20050170532 Novel oxidation method to fabricate low resistance TMR read head |
08/04/2005 | US20050170218 Tunnel junction type includes a magnetic multi-layered film, ferromagnetic film, insulating film such that a current flows between the magnetic multi-layered film and the ferromagnetic film, tunneling through the insulating film; entirety of first magnetic multi-layered film can be rewritten |
08/04/2005 | US20050169067 Memory device capable of performing high speed reading while realizing redundancy replacement |
08/04/2005 | US20050169048 Single transistor type magnetic random access memory device and method of operating and manufacturing the same |
08/04/2005 | US20050169047 Magnetic field sensor using spin polarized current |
08/04/2005 | US20050169046 Closed flux magnetic memory |
08/04/2005 | US20050168888 Magnetoresistive sensor having cobalt-iron alloy layer in free layer |
08/04/2005 | US20050168887 Magnetoresistive element, magnetic head, magnetic reproducing apparatus, and magnetic memory |
08/04/2005 | US20050168885 Exchange coupling film and magnetoresistive element using the same |
08/04/2005 | US20050168884 Magnetic tunnel effect type magnetic head, and method of producing same |
08/04/2005 | US20050168883 Magnetic tunnel effect type magnetic head, and method of producing same |
08/04/2005 | US20050168882 Magnetic resistance device and method of manufacturing the same |
08/04/2005 | US20050168881 Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane GMR heads |
08/04/2005 | US20050168880 Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane GMR heads |
08/04/2005 | US20050168879 Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane GMR heads |
08/04/2005 | US20050168317 TMR sensor with oxidized alloy barrier layer and method for forming the same |
08/04/2005 | US20050167657 Multi-bit magnetic memory cells |
08/04/2005 | DE102004059409A1 Magnetische Speichervorrichtung Magnetic storage device |
08/04/2005 | DE102004030174A1 Verfahren zur Herstellung magnetischer Direktzugriffsspeicher A process for the production of magnetic random access memory |
08/03/2005 | EP1560231A2 Magnetic resistance device |
08/03/2005 | EP1559107A1 Bilayer cmp process to improve surface roughness of magnetic stack in mram technology |
08/03/2005 | CN1650369A Layout for thermally selected cross-point MRAM cell |
08/03/2005 | CN1650368A Semiconductor memory device and operating method for a semiconductor memory device |
08/03/2005 | CN1649028A Magnetic resistance device |
08/03/2005 | CN1649027A Magnetic memory device and method of manufacturing the same |
08/03/2005 | CN1213492C Method for making plate-type magnetic-resistance sensing piece element |
08/03/2005 | CN1213491C Fixing device of plate-type magnetic-resistance sensing element |
08/03/2005 | CN1213453C Crossover point memory array containing blocking sneak path current shared equipment |
08/03/2005 | CN1213435C High data read-out allowance memory for storing data using change of resistance quantity |
08/02/2005 | US6925029 Thin film magnetic memory device for selectively supplying a desired data write current to a plurality of memory blocks |
08/02/2005 | US6925003 Magnetic memory cell structure |
08/02/2005 | US6925000 Method and apparatus for a high density magnetic random access memory (MRAM) with stackable architecture |
08/02/2005 | US6924520 MRAM including unit cell formed of one transistor and two magnetic tunnel junctions (MTJS) and method for fabricating the same |
08/02/2005 | US6923860 Oxidation of material for tunnel magneto-resistive sensors |
07/28/2005 | WO2005069368A1 Current injection magnetic domain wall moving element |
07/28/2005 | WO2005067472A2 Synthetic antiferromagnet structures for use in mtjs in mram technology |
07/28/2005 | WO2004047113A3 Magnetic memory element and memory device including same |
07/28/2005 | US20050164414 Magnetic annealing sequences for patterned MRAM synthetic antiferromagnetic pinned layers |
07/28/2005 | US20050162970 Magnetic memory device and manufacturing method thereof |
07/28/2005 | US20050162906 Magnetic memory device having magnetic circuit and method of manufacture thereof |
07/28/2005 | US20050162905 Magnetoresistive effect element and magnetic memory device |
07/28/2005 | US20050162904 Magnetoresistive effect element and magnetic memory device |
07/28/2005 | US20050162903 Method of operating a stacked spin based memory |
07/28/2005 | US20050162786 Magnetoresistive head with improved in-stack longitudinal biasing layers and fabricating method |
07/28/2005 | US20050162160 Concept of compensating for piezo influences on integrated circuitry |
07/28/2005 | US20050161752 Current-in-plane magnetic sensor including a trilayer structure |
07/28/2005 | US20050160585 Magnetoresistive memory device and method for fabricating the same |
07/27/2005 | EP1556864A2 Patterning metal stack layers of magnetic switching device, utilizing a bilayer metal hardmask |
07/27/2005 | CN1647208A Synthetic-ferrimagnet sense-layer for high density MRAM applications |
07/27/2005 | CN1647207A Storage device using resistance varying storage element and reference resistance value decision method for the device |
07/27/2005 | CN1647206A Material combinations for tunnel junction cap layer, tunnel junction hard mask and tunnel junction stack seed layer in mram processing |
07/27/2005 | CN1646932A Method and arrangement for protecting a chip and checking its authenticity |
07/26/2005 | US6922355 Thin film magnetic memory device capable of conducting stable data read and write operations |
07/26/2005 | US6922052 Measuring device for contactless detecting a ferromagnetic object |
07/26/2005 | US6921965 Die surface magnetic field shield |
07/26/2005 | US6921955 Noise-proof semiconductor device having a Hall effect element |
07/26/2005 | US6921954 Asymmetric patterned magnetic memory |
07/26/2005 | US6921953 Self-aligned, low-resistance, efficient MRAM read/write conductors |
07/26/2005 | US6921587 Sensing current is prevented from expanding in the track width direction in the multilayer film, enabling an improvement in read output |
07/26/2005 | US6920684 Assembling method of a magnetic sensor using magnetoresistive elements that produce an output signal in accordance with magnetism sensed |
07/21/2005 | WO2005067052A1 Magnetic memory cell and magnetic memory device |
07/21/2005 | US20050158992 Cladded conductor for use in a magnetoelectronics device and method for fabricating the same |
07/21/2005 | US20050158952 Mram devices with fine tuned offset |
07/21/2005 | US20050158882 Method of forming nano-sized MTJ cell without contact hole |
07/21/2005 | US20050158881 Method of making toroidal mram cells |