Patents
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
08/2005
08/11/2005WO2005064783A3 Tuneable spin torque device for generating an oscillating signal and method for tuning
08/11/2005US20050176206 Method and system for forming a contact in a thin-film device
08/11/2005US20050174876 Semiconductor storage device and production method therefor
08/11/2005US20050174875 Semiconductor storage device
08/11/2005US20050174854 Memory device
08/11/2005US20050174837 Logic-in-memory circuit using magnetoresistive element
08/11/2005US20050174834 Magnetic tunneling junction cell having a free magnetic layer with a low magnetic moment and magnetic random access memory having the same
08/11/2005US20050174821 Multi-stage per cell magnetoresistive random access memory
08/11/2005US20050174701 Current-perpendicular-to-plane magnetoresistive sensor with free layer stabilized against vortex magnetic domains generated by the sense current
08/11/2005US20050174692 Magnetoresistive sensor having a pinned layer in multilayer structure
08/11/2005US20050174112 Magnetic sensor apparatus and manufacturing method thereof
08/11/2005US20050173698 Multilayer dielectric tunnel barrier used in magnetic tunnel junction devices, and its method of fabrication
08/11/2005US20050172480 A fabricating method for a fluxgate sensor integrated in printed circuit board
08/11/2005DE102004060645A1 Weichreferenz-Vierleiter-Magnetspeichervorrichtung Soft reference four-wire magnetic memory device
08/11/2005DE10134866B4 Verfahren zum horizontalen Wachsenlassen von Kohlenstoff-Nanoröhren und Feldeffekttransistor, der die durch das Verfahren gewachsenen Kohlenstoff-Nanoröhren verwendet Method for horizontally growing carbon nanotubes and field effect transistor using the grown by the method of carbon nanotubes
08/10/2005CN1653550A Resistive memory elements with reduced roughness
08/10/2005CN1653549A Method of manufacturing MRAM offset cells in a damascene structure
08/10/2005CN1652371A Hall circuitboard for DC brushless electric machine
08/10/2005CN1652249A Method of forming nano-sized MTJ cell without contact hole
08/10/2005CN1651928A Magnetic sensor and method of producing the same
08/10/2005CN1214414C Method of mfg. magnetic tunnel junction device
08/10/2005CN1214131C Dual chamber ion beam sputter deposition system
08/09/2005US6928015 Thin film magnetic memory device and semiconductor integrated circuit device including the same as one of circuit blocks
08/09/2005US6927996 Magnetic memory device
08/09/2005US6927952 CPP GMR free layer having ferromagnetic layers with parallel magnetization separated by non-magnetic layer
08/09/2005US6927948 Differential CPP GMR sensor with free layers separated by metal gap layer
08/09/2005US6927468 Magnetic random access memory
08/09/2005US6927467 Magnetoresistive memory device and method for fabricating the same
08/09/2005US6927466 Magnetoresistive memory or sensor devices having improved switching properties and method of fabrication
08/09/2005US6927092 Method of forming a shared global word line MRAM structure
08/09/2005US6927075 Magnetic memory with self-aligned magnetic keeper structure
08/09/2005US6927074 Asymmetric memory cell
08/04/2005WO2003036734A3 Magnetoresistance effect element, magetic memory element, magnetic memory device, and their manufacturing method
08/04/2005US20050170628 Forming a contact in a thin-film device
08/04/2005US20050170533 Magnetic tunnel junction device with a compositionally modulated electrode
08/04/2005US20050170532 Novel oxidation method to fabricate low resistance TMR read head
08/04/2005US20050170218 Tunnel junction type includes a magnetic multi-layered film, ferromagnetic film, insulating film such that a current flows between the magnetic multi-layered film and the ferromagnetic film, tunneling through the insulating film; entirety of first magnetic multi-layered film can be rewritten
08/04/2005US20050169067 Memory device capable of performing high speed reading while realizing redundancy replacement
08/04/2005US20050169048 Single transistor type magnetic random access memory device and method of operating and manufacturing the same
08/04/2005US20050169047 Magnetic field sensor using spin polarized current
08/04/2005US20050169046 Closed flux magnetic memory
08/04/2005US20050168888 Magnetoresistive sensor having cobalt-iron alloy layer in free layer
08/04/2005US20050168887 Magnetoresistive element, magnetic head, magnetic reproducing apparatus, and magnetic memory
08/04/2005US20050168885 Exchange coupling film and magnetoresistive element using the same
08/04/2005US20050168884 Magnetic tunnel effect type magnetic head, and method of producing same
08/04/2005US20050168883 Magnetic tunnel effect type magnetic head, and method of producing same
08/04/2005US20050168882 Magnetic resistance device and method of manufacturing the same
08/04/2005US20050168881 Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane GMR heads
08/04/2005US20050168880 Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane GMR heads
08/04/2005US20050168879 Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane GMR heads
08/04/2005US20050168317 TMR sensor with oxidized alloy barrier layer and method for forming the same
08/04/2005US20050167657 Multi-bit magnetic memory cells
08/04/2005DE102004059409A1 Magnetische Speichervorrichtung Magnetic storage device
08/04/2005DE102004030174A1 Verfahren zur Herstellung magnetischer Direktzugriffsspeicher A process for the production of magnetic random access memory
08/03/2005EP1560231A2 Magnetic resistance device
08/03/2005EP1559107A1 Bilayer cmp process to improve surface roughness of magnetic stack in mram technology
08/03/2005CN1650369A Layout for thermally selected cross-point MRAM cell
08/03/2005CN1650368A Semiconductor memory device and operating method for a semiconductor memory device
08/03/2005CN1649028A Magnetic resistance device
08/03/2005CN1649027A Magnetic memory device and method of manufacturing the same
08/03/2005CN1213492C Method for making plate-type magnetic-resistance sensing piece element
08/03/2005CN1213491C Fixing device of plate-type magnetic-resistance sensing element
08/03/2005CN1213453C Crossover point memory array containing blocking sneak path current shared equipment
08/03/2005CN1213435C High data read-out allowance memory for storing data using change of resistance quantity
08/02/2005US6925029 Thin film magnetic memory device for selectively supplying a desired data write current to a plurality of memory blocks
08/02/2005US6925003 Magnetic memory cell structure
08/02/2005US6925000 Method and apparatus for a high density magnetic random access memory (MRAM) with stackable architecture
08/02/2005US6924520 MRAM including unit cell formed of one transistor and two magnetic tunnel junctions (MTJS) and method for fabricating the same
08/02/2005US6923860 Oxidation of material for tunnel magneto-resistive sensors
07/2005
07/28/2005WO2005069368A1 Current injection magnetic domain wall moving element
07/28/2005WO2005067472A2 Synthetic antiferromagnet structures for use in mtjs in mram technology
07/28/2005WO2004047113A3 Magnetic memory element and memory device including same
07/28/2005US20050164414 Magnetic annealing sequences for patterned MRAM synthetic antiferromagnetic pinned layers
07/28/2005US20050162970 Magnetic memory device and manufacturing method thereof
07/28/2005US20050162906 Magnetic memory device having magnetic circuit and method of manufacture thereof
07/28/2005US20050162905 Magnetoresistive effect element and magnetic memory device
07/28/2005US20050162904 Magnetoresistive effect element and magnetic memory device
07/28/2005US20050162903 Method of operating a stacked spin based memory
07/28/2005US20050162786 Magnetoresistive head with improved in-stack longitudinal biasing layers and fabricating method
07/28/2005US20050162160 Concept of compensating for piezo influences on integrated circuitry
07/28/2005US20050161752 Current-in-plane magnetic sensor including a trilayer structure
07/28/2005US20050160585 Magnetoresistive memory device and method for fabricating the same
07/27/2005EP1556864A2 Patterning metal stack layers of magnetic switching device, utilizing a bilayer metal hardmask
07/27/2005CN1647208A Synthetic-ferrimagnet sense-layer for high density MRAM applications
07/27/2005CN1647207A Storage device using resistance varying storage element and reference resistance value decision method for the device
07/27/2005CN1647206A Material combinations for tunnel junction cap layer, tunnel junction hard mask and tunnel junction stack seed layer in mram processing
07/27/2005CN1646932A Method and arrangement for protecting a chip and checking its authenticity
07/26/2005US6922355 Thin film magnetic memory device capable of conducting stable data read and write operations
07/26/2005US6922052 Measuring device for contactless detecting a ferromagnetic object
07/26/2005US6921965 Die surface magnetic field shield
07/26/2005US6921955 Noise-proof semiconductor device having a Hall effect element
07/26/2005US6921954 Asymmetric patterned magnetic memory
07/26/2005US6921953 Self-aligned, low-resistance, efficient MRAM read/write conductors
07/26/2005US6921587 Sensing current is prevented from expanding in the track width direction in the multilayer film, enabling an improvement in read output
07/26/2005US6920684 Assembling method of a magnetic sensor using magnetoresistive elements that produce an output signal in accordance with magnetism sensed
07/21/2005WO2005067052A1 Magnetic memory cell and magnetic memory device
07/21/2005US20050158992 Cladded conductor for use in a magnetoelectronics device and method for fabricating the same
07/21/2005US20050158952 Mram devices with fine tuned offset
07/21/2005US20050158882 Method of forming nano-sized MTJ cell without contact hole
07/21/2005US20050158881 Method of making toroidal mram cells
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