Patents
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
09/2005
09/15/2005US20050201020 Magnetoresistive element, magnetic head, and magnetic recording and reproducing apparatus
09/15/2005US20050200449 Method for manufacturing magnetic sensor, magnet array used in the method, and method for manufacturing the magnet array
09/15/2005US20050199926 Magnetic random access memory
09/15/2005US20050199925 Magnetic random access memory
09/14/2005EP1575088A1 Magnetic memory device
09/14/2005EP1574870A2 Method for manufacturing magnetic sensor, magnet array used in the method, and method for manufacturing the magnet array
09/14/2005CN1669159A Magnetic field sensor comprising Hall element
09/13/2005US6943998 Tunnel magnetoresistive effective element, and a thin film magnetic head, a magnetic head device and a magnetic disk drive device using same
09/13/2005US6943420 Magnetic random access memory (MRAM) devices having nonparallel main and reference magnetic resistors
09/13/2005US6943394 Magnetic storage apparatus and manufacturing method thereof
09/13/2005US6943393 Memory cell arrangement and method of fabricating it
09/13/2005US6943041 Magnetoresistive element and method for producing the same, as well as magnetic head, magnetic memory and magnetic recording device using the same
09/13/2005US6943040 Magnetic random access memory designs with controlled magnetic switching mechanism by magnetostatic coupling
09/09/2005WO2005082061A2 Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
09/09/2005WO2005006338A3 Magnetoelectronics information device having a compound magnetic free layer
09/08/2005US20050195648 Method and apparatus for testing tunnel magnetoresistive effect element
09/08/2005DE102005005320A1 Magnetisches Sensorgerät und dessen Herstellungsverfahren The magnetic sensor device and its manufacturing method
09/08/2005DE102005002526A1 Wärmeunterstützte Magnetspeichervorrichtung mit gesteuerter Temperatur Heat-assisted magnetic memory device with controlled temperature
09/08/2005DE10117279B4 Nicht-lineares Hall IC Non-linear Hall IC
09/07/2005EP1571713A1 Spin injection device, magnetic device using the same, magnetic thin film used in the same
09/07/2005EP1571712A1 Spin-injection device and magnetic device using spin-injection device
09/07/2005EP1155462B1 Storage cell arrangement and method for producing the same
09/07/2005CN1665030A 3d rram
09/07/2005CN1218412C Production method for spin valve film and production method of magnetoresistance effect type magnetic head
09/06/2005US6940750 Magnetic memory, magnetic memory array, method for fabricating a magnetic memory, method for recording in a magnetic memory and method for reading out from a magnetic memory
09/06/2005US6940701 Magnetic sensor, production process of the magnetic sensor and magnetic array suitable for the production process
09/06/2005US6940700 Magnetic head and magnetic reproducing apparatus
09/06/2005US6940275 Magnetic position sensor apparatus and method
09/06/2005US6939722 Method of forming magnetic memory
09/01/2005WO2005079528A2 Spin transfer magnetic element having low saturation magnetization free layers
09/01/2005US20050191829 Solid material comprising a structure of almost-completely-polarised electronic orbitals, method of obtaining same and use thereof in electronics and nanoelectronics
09/01/2005US20050191764 Method of forming a magnetic random access memory structure
09/01/2005US20050190594 Magnetic element and magnetic element array
09/01/2005US20050190593 Magnetoelectronic memory element with inductively coupled write wires
09/01/2005US20050189574 Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
09/01/2005DE10047994B4 Hall-Sensor-Bauelement Hall sensor component
08/2005
08/31/2005EP1568796A1 Manganese alloy sputtering target
08/30/2005US6937967 Method and system for finite element modeling and simulation of enhanced magnetoresistance in thin film semiconductors with metallic inclusions
08/30/2005US6937506 Magnetic memory device
08/30/2005US6937505 Nonvolatile memory cell and nonvolatile semiconductor memory device
08/30/2005US6937449 Spin-valve head containing closed-flux-structure domain control films
08/30/2005US6937448 Spin valve having copper oxide spacer layer with specified coupling field strength between multi-layer free and pinned layer structures
08/30/2005US6937434 Magnetic field sensor utilizing anomalous hall effect magnetic film
08/30/2005US6937012 Magnetic sensor with pointing control circuit
08/30/2005US6936903 Magnetic memory cell having a soft reference layer
08/30/2005US6936479 Method of making toroidal MRAM cells
08/25/2005WO2005078748A1 Magnetic thin film and utilizing the same, magnetoresistive effect element and magnetic device
08/25/2005US20050186452 CPP GMR and magnetostriction improvement by laminating Co90Fe10 free layer with thin Fe50Co50 layers
08/25/2005US20050186334 Semiconductor device fabrication method
08/25/2005US20050185459 Semiconductor memory device comprising magneto resistive element and its manufacturing method
08/25/2005US20050185458 Low magnetization materials for high performance magnetic memory devices
08/25/2005US20050185457 Magnetic memory device and method of manufacturing the same
08/25/2005US20050185456 Thin film device and a method of providing thermal assistance therein
08/25/2005US20050185435 Magnetic storage device and method of fabricating the same
08/25/2005US20050185347 Magnetoresistive element and magnetic memory device
08/25/2005US20050185346 Magnetic sensing device, method of forming the same, magnetic sensor, and ammeter
08/25/2005US20050184839 Spin transfer magnetic element having low saturation magnetization free layers
08/25/2005DE10393096T5 Magnetspeicher unter Verwendung eines ferromagnetischen Tunnelübergangselements A magnetic memory using a ferromagnetic tunnel junction element
08/25/2005DE10154498B4 Hallsondensystem und Verfahren zum Herstellen eines Hallsondensystems sowie Verfahren zum Steuern einer Hallspannung Hall probe system and method for fabricating a Hall probe system and method for controlling a Hall voltage
08/24/2005EP1566810A2 Resistive memory device with stable writing
08/24/2005EP1566651A1 Magnetic sensing device, method of forming the same, magnetic sensor and ammeter
08/24/2005EP1566650A2 Magnetic sensor and data storage system
08/24/2005CN1659707A Magnetoresistive random-access memory device and control method for ferromagnetic trsfer temp of ferromagnetiv semiconductor for comprising the device
08/24/2005CN1659444A Sensor and method for measuring a current of charged particles
08/24/2005CN1658326A Controlled temperature, thermal-assisted magnetic memory device
08/24/2005CN1658288A Self-pinned read sensor design with enhanced lead stabilizing mechanism
08/24/2005CN1658287A Magnetoresistive sensor with decoupled hard bias multilayers
08/24/2005CN1658286A Magnetic device and magnetic memory
08/24/2005CN1657967A Magnetic sensing device, method of forming the same, magnetic sensor, and ammeter
08/24/2005CN1216406C Magnetic p-n junction thin film material and mfg. method thereof
08/23/2005US6934196 Memory module with magnetoresistive elements and a method of reading data from in-row and in-column directions
08/23/2005US6934184 Magnetic memory
08/23/2005US6934133 Three terminal magnetic head having a magnetic semiconductor and a tunnel magnetoresistive film and magnetic recording apparatus including the head
08/23/2005US6934130 Magnetic device having shaped ferromagnetic film
08/23/2005US6933155 Methods for providing a sub .15 micron magnetic memory structure
08/18/2005US20050180238 Controlled temperature, thermal-assisted magnetic memory device
08/18/2005US20050180064 Magnetoresistive sensor with decoupled hard bias multilayers
08/18/2005US20050180061 Self-pinned read sensor design with enhanced lead stabilizing mechanism
08/18/2005US20050180041 Disk storage systems
08/18/2005US20050179101 Tunneling magnetoresistance device semiconductor junction device magnetic memory and semiconductor light-emitting device
08/18/2005DE102004039235A1 Read operation performing method for use in memory cell string, involves applying write sense current across magnetic random access memory cell, and determining whether one voltage across string differs from another voltage
08/18/2005DE102004003853A1 Konzept zur Kompensation von Piezo-Einflüssen auf eine integrierte Schaltunganordnung Concept for compensation of piezo influences on an integrated circuit arrangement
08/17/2005EP1495470B1 Material combinations for tunnel junction cap layer, tunnel junction hard mask and tunnel junction stack seed layer in mram processing
08/17/2005EP1203382B1 Method for producing a magnetic tunnel contact and magnetic tunnel contact
08/17/2005CN1656580A Method of forming mram devices
08/17/2005CN1655374A Current-perpendicular-to-plane magnetoresistive sensor and method for manufacturing the same
08/17/2005CN1655278A Magnetic random access memory devices including heat generating layers and related methods
08/17/2005CN1215464C Magnetic recorder and mfg. method thereof
08/17/2005CN1215463C Magnetic head for hard disk drive
08/17/2005CN1215426C Semiconductor memory device
08/16/2005US6930914 Methods for isolating memory elements within an array
08/16/2005US6930911 Magnetic memory device, method for writing on the same and method for reading from the same
08/16/2005US6930479 High resolution scanning magnetic microscope operable at high temperature
08/16/2005US6930370 Memory with conductors between or in communication with storage units
08/16/2005US6930369 Thin film device and a method of providing thermal assistance therein
08/16/2005US6929960 Reducing the effects of neel coupling in MRAM structures
08/16/2005US6929959 Manufacturing method of CPP type magnetic sensor having current-squeezing path
08/16/2005US6929958 Method to make small isolated features with pseudo-planarization for TMR and MRAM applications
08/16/2005US6929957 Magnetic random access memory designs with patterned and stabilized magnetic shields
08/16/2005US6928724 Magnetoresistance effect element and method for producing same
1 ... 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 ... 121