Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
10/2005
10/13/2005US20050226043 Magnetic tunnel junctions with improved tunneling magneto-resistance
10/13/2005US20050226042 Thin film magnetic memory device for programming required information with an element similar to a memory cell information programming method
10/13/2005US20050226040 Magnetic memory cell with shape anisotropy
10/13/2005US20050226034 Resistance change sensor
10/13/2005US20050226030 Magnetic memory device
10/13/2005US20050225907 Magnetic head with domain stabilization and magnetic recording/reproducing apparatus using the same
10/13/2005US20050225905 Tunnel magnetoresistance device
10/13/2005US20050224850 Mram device having low-k inter-metal dielectric
10/13/2005DE19680088B4 Kalibrier- und Herstellungsverfahren für einen Magnetsensor Calibration and manufacturing method of a magnetic sensor
10/12/2005EP1585172A1 Magnetic memory device
10/12/2005EP1585138A2 A magnetic random access memory array with free layer locking mechanism
10/12/2005CN1681142A Tunnel magnetoresistance device
10/12/2005CN1681081A Semiconductor wafer and its producing method
10/12/2005CN1681041A Resistance change sensor
10/12/2005CN1680783A Rotary and angular position sensing
10/11/2005US6954375 Magnetic storage element, recording method using the same, and magnetic storage device
10/11/2005US6954374 Thin film magnetic memory device including memory cells having a magnetic tunnel junction
10/11/2005US6954341 Magneto-resistive sensor with oxidization-resistant conductive layer between cap layer and electrode overhang
10/11/2005US6953601 Synthetic free layer for CPP GMR
10/06/2005WO2005093835A1 Magnetic storage
10/06/2005WO2005093448A1 Improved permalloy sensor
10/06/2005US20050221512 Magnetic recording medium and magnetic memory apparatus
10/06/2005US20050221511 MRAM arrays with reduced bit line resistance and method to make the same
10/06/2005US20050219895 Magnetic random access memory array with free layer locking mechanism
10/06/2005US20050219773 Fabrication method for an in-stack stabilized synthetic stitched CPP GMR head
10/06/2005US20050219771 Magnetic sensor, magnetic field sensing method, semagnetic recording head, and magnetic memory device
10/06/2005US20050219769 Magnetoresistive device and method for manufacturing same
10/06/2005US20050219768 Magneto-resistance effect element
10/06/2005US20050219767 Magneto-resistive element
10/06/2005US20050219766 Thin-film magnetic head, head gimbal assembly and hard disk drive
10/06/2005US20050218888 Rotary and angular position sensing
10/06/2005US20050218501 Semiconductor wafer and manufacturing method therefor
10/05/2005EP1583078A1 CPP STRUCTURE MAGNETORESISTANCE EFFECT ELEMENT AND HEADb SLIDER
10/05/2005CN1679122A Amorphous alloys for magnetic devices
10/05/2005CN1679114A Magnetic random access memory having a vertical write line
10/05/2005CN1677559A Magnetic-resistance random access memory and integrated circuit assembly
10/05/2005CN1677558A Magneto-resistive element
10/05/2005CN1677502A Method and apparatus for testing tunnel magnetoresistive effect element
10/05/2005CN1222054C Magnetoresistance effect magnetic head, and method of mfg. same
10/05/2005CN1221978C Non-volatile magnetic memory unit and component
10/04/2005US6952364 Magnetic tunnel junction structures and methods of fabrication
10/04/2005US6952328 Magnetic sensing element having second antiferromagnetic layer on edge sections and rear end of a middle section of free magnetic layer
09/2005
09/29/2005US20050214953 Method of fabricating a mram device
09/29/2005US20050213401 Semiconductor integrated circuit device
09/29/2005US20050213376 Magnetic memory device and its driving method and magnetic memory
09/29/2005US20050213375 Soft-reference three conductor magnetic memory storage device
09/29/2005US20050213257 Permalloy sensor
09/29/2005US20050212632 Magnetic sensor, production process of the magnetic sensor and magnetic array suitable for the production process
09/28/2005EP1580821A2 Magnetoresistance effect element magnetic memory element magnetic memory device, and their manufacturing method
09/28/2005EP1580758A2 Soft-reference three conductor magnetic memory storage device
09/28/2005EP1579908A1 The combinatorial synthesis of novel materials
09/28/2005EP1062667B1 Method to write/read mram arrays
09/28/2005CN1674148A Soft-reference three conductor magnetic memory storage device
09/28/2005CN1674147A Method for suppressing manganese diffusion in thin film with vertical magnetic anisotropy
09/28/2005CN1674094A Magnetoresistive element, magnetic head, and magnetic recording and reproducing apparatus
09/28/2005CN1221044C Magnetic resistance effect film and memory therewith
09/28/2005CN1221043C Magnetic resistance element and magnetic random access storage using said element
09/28/2005CN1221042C Method for manufacturing magnetoresistance effect device and method for manufacturing magnetoresistance effect magnetic head
09/28/2005CN1221041C Magnetore sistance effect element and magnetoresistance effect type magnetic head
09/27/2005US6950369 Magnetic memory device capable of passing bidirectional currents through the bit lines
09/27/2005US6950335 Magnetic tunnel junction magnetic device, memory and writing and reading methods using said device
09/27/2005US6950332 Magnetic memory element with vortex magnetization to control magnetization rotation and prevent leakage of magnetic flux
09/27/2005US6949920 Apparatus for measuring current density of fuel cell
09/27/2005US6949779 Magnetoresistive element and magnetic memory
09/27/2005US6949435 Asymmetric-area memory cell
09/27/2005US6949386 Method for mass production of a plurality of magnetic sensors
09/22/2005WO2005088745A1 Magnetoresistive element and its manufacturing method
09/22/2005US20050208682 Magnetic memory device and method of manufacturing the same
09/22/2005US20050208680 Method for producing a reference layer and an mram memory cell provided with said type of reference layer
09/22/2005US20050207263 Magnetic non-volatile memory element
09/22/2005US20050207240 Digital processing device with disparate magnetoelectronic gates
09/22/2005US20050207219 Magnetic tunnel junction structures and methods of fabrication
09/22/2005US20050207217 Layered magnetic structures having improved surface planarity for bit material deposition
09/22/2005US20050207216 Semiconductor integrated circuit device
09/22/2005US20050207072 Magnetic sensing element pinning magnetization of pinned magnetic layer by uniaxial anisotropy of pinned magnetic layer itself
09/22/2005US20050207071 Magnetosensitive device and method of manufacturing the same
09/22/2005US20050207064 Magnetic switching device
09/22/2005US20050205952 Magnetic random access memory cells having split sub-digit lines having cladding layers thereon and methods of fabricating the same
09/22/2005US20050205909 Magnetic random access memory and data write method for the same
09/22/2005US20050205908 Semiconductor memory device provided with magneto-resistive element and method for fabricating the same
09/21/2005CN1672058A Magnetic sensing device
09/21/2005CN1670859A Semiconductor memory device provided with magneto-resistive element and method for fabricating the same
09/20/2005US6947320 Memory device capable of stable data writing
09/20/2005US6947318 Magnetic random access memory
09/20/2005US6947317 Magnetic random access memory
09/20/2005US6947316 Magnetoresistive sensor including magnetic domain control layers having high electric resistivity, magnetic head and magnetic disk apparatus
09/20/2005US6947314 Magnetic random access memory and method of manufacturing the same
09/20/2005US6947313 Method and apparatus of coupling conductors in magnetic memory
09/20/2005US6947312 MRAM having SAL layer
09/20/2005US6947263 CPP mode magnetic sensing element including a multilayer free layer biased by an antiferromagnetic layer
09/20/2005US6947238 Bias circuit for magneto-resistive head
09/20/2005US6946834 Method of orienting an axis of magnetization of a first magnetic element with respect to a second magnetic element, semimanufacture for obtaining a sensor, sensor for measuring a magnetic field
09/20/2005US6946698 MRAM device having low-k inter-metal dielectric
09/20/2005US6946697 Synthetic antiferromagnet structures for use in MTJs in MRAM technology
09/20/2005US6946302 Synthetic-ferrimagnet sense-layer for high density MRAM applications
09/15/2005WO2005086250A1 Tunnel junction device
09/15/2005US20050201173 Method of manufacture for improved diode for use in MRAM devices
09/15/2005US20050201023 Magnetic element utilizing spin transfer and an MRAM device using the magnetic element
09/15/2005US20050201022 Novel process and structure to fabricate CPP spin valve heads for ultra-hing recording density
09/15/2005US20050201021 Magneto-resistive effect element, magnetic sensor using magneto-resistive effect, magnetic head using magneto-resistive effect and magnetic memory
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