Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
11/2005
11/17/2005US20050254288 Magnetic random access memory and method of writing data in magnetic random access memory
11/17/2005US20050254182 Magnetoresistive sensor including magnetic domain control layers having high electric resistivity, magnetic head and magnetic disk apparatus
11/17/2005US20050254181 Free layer design for CPP GMR enhancement
11/17/2005US20050254180 Magnetic tunnel junction cap structure and method for forming the same
11/17/2005US20050254179 Magnetoresistive element, thin-film magnetic head, head gimbal assembly, and magnetic disk drive
11/17/2005US20050253128 Techniques for spin-flop switching with offset field
11/17/2005DE19680089B4 Magnetsensor mit verbesserter Kalibrierbarkeit Magnetic sensor with improved calibration capability
11/17/2005DE102005014461A1 In-Line-Feldsensor In-line field sensor
11/16/2005CN1697081A Memory device
11/16/2005CN1227671C Method and device for reading memory cell of resistance crossover point array
11/16/2005CN1227649C Magnetic sensor, magnetic head and magnetic recording device
11/15/2005US6965533 Semiconductor device which is low in power and high in speed and is highly integrated
11/15/2005US6965138 Magnetic memory device and method of manufacturing the same
11/10/2005WO2005106955A1 Storage element
11/10/2005WO2005024856A3 Method and system for providing a magnetic element including passivation structures
11/10/2005US20050249029 Memory module and system, an information processing apparatus and a method of use
11/10/2005US20050248981 Magnetic storage element, recording method using the same, and magnetic storage device
11/10/2005US20050248980 MRAM cell with flat topography and controlled bit line to free layer distance and method of manufacture
11/10/2005US20050248888 Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane gmr heads
11/10/2005US20050247964 Synthetic antiferromagnet structures for use in MTJs in MRAM technology
11/10/2005DE102005018204A1 Magnetische Tunnelübergangsstruktur, MRAM-Zelle und Fotomaske Magnetic tunnel junction structure, MRAM cell and photomask
11/09/2005EP1594145A1 Heat treatment system
11/09/2005EP1593168A1 Two-step magnetic tunnel junction stack deposition
11/09/2005EP1129366B1 Magnetoresistive sensor or memory elements with decreased magnetic switch field
11/09/2005CN1694277A Method for manufacturing magnetic sensor, magnet array and method for manufacturing the magnet array
11/09/2005CN1694276A Method for manufacturing magnetosensitive device with giant magnetic impedance effect based on microelectrochenical system
11/09/2005CN1694275A Magnetosensitive device based on soft magnetic multilayer film giant magnetic impedance effect
11/09/2005CN1694274A Magnetosensitive sensor array and manufacturing method thereof
11/08/2005US6963099 Magnetic memory device and method of manufacturing the same
11/08/2005US6963096 Semiconductor element having a semi-magnetic contact
11/08/2005US6962663 Process for manufacturing a read head
11/03/2005US20050246114 In-line field sensor
11/03/2005US20050245039 PCMO thin film with resistance random access memory (RRAM) characteristics
11/03/2005US20050243630 Memory cell with an asymmetrical area
11/03/2005US20050242384 MRAM and method of manufacturing the same
11/02/2005EP1590837A2 High density and high programming efficiency mram design
11/02/2005CN1692447A Memories and memory circuits
11/02/2005CN1691201A Write line design in MRAM and its manufacturing method
11/02/2005CN1691139A Method and apparatus for testing tunnel magnetoresistive effect element
11/02/2005CN1691137A Film magnetic head and its individual identification method
11/02/2005CN1225726C Magnetoresistance effect film and spin valve reproducing head and method for manufacturing same
11/02/2005CN1225725C Ferromagnetic stack material with reliable uniaxial anisotropy
11/02/2005CN1225655C Leakage magnetism detecting sensor of magnetic inspection apparatus and method for on-line inspection of steel band
11/01/2005US6961265 Magnetic non-volatile memory coil layout architecture and process integration scheme
11/01/2005US6961261 Magnetic random access memory and data read method thereof
11/01/2005US6961222 Flux guide type device, head having the same, and drive
11/01/2005US6960815 Magnetic memory device having yoke layer, and manufacturing method thereof
11/01/2005US6960480 Method of forming a magnetic tunneling junction (MTJ) MRAM device and a tunneling magnetoresistive (TMR) read head
11/01/2005US6960397 substrate, zirconium-alumina lower and/or upper layer, ferromagnetic, anti-ferromagnetic, and tunneling barrier layers; improved thermal stability; disk drives
10/2005
10/27/2005WO2005050653A3 Stress assisted current driven switching for magnetic memory applications
10/27/2005US20050237794 Thin film magnetic memory device capable of conducting stable data read and write operations
10/27/2005US20050237793 Magnetic random access memory designs with controlled magnetic switching mechanism by magnetostatic coupling
10/27/2005US20050237792 Magnetic memory device structure
10/27/2005US20050237791 Solid-state memory device and method for arrangement of solid-state memory cells
10/27/2005US20050237790 Antiferromagnetically stabilized pseudo spin valve for memory applications
10/27/2005US20050237789 Method and apparatus for testing tunnel magnetoresistive effect element
10/27/2005US20050237677 Thin film magnetic head, head gimbal assembly, and hard disk drive
10/27/2005US20050237675 Magnetic tunnel effect type magnetic head, and recorder/player
10/27/2005US20050237674 Thin film magnetic head, head gimbal assembly, and hard disk drive
10/27/2005DE102005009546A1 Ein Widerstandsänderungssensor A change in resistance sensor
10/26/2005EP1589594A1 Cpp-type giant manetoresistance effect element and magnetic component and magnetic device using it
10/26/2005EP1488426B1 Method for producing a reference layer and an mram memory cell provided with said type of reference layer
10/26/2005EP1425754B1 Compensation of a bias magnetic field in a storage surface of a magnetoresistive storage cell
10/26/2005EP1358502B1 Gmr structure and method for the production thereof
10/26/2005CN1689155A Discrete semiconductor component
10/26/2005CN1688036A Method for making magnetosensitive device based on soft magnetic multilayer huge magnetoimpedance effect
10/26/2005CN1688035A Magnetosensitive device based on huge magneto impedance effect of micro mechanoelectric system
10/26/2005CN1225037C Integrated circuit device
10/26/2005CN1224844C Low-intensity magnetic field sensor using printed circuit board mfg. thchnology and its mfg. method
10/25/2005US6958932 Semiconductor integrated circuit device and method of manufacturing the same
10/25/2005US6958930 Magnetoelectronic device with variable magnetic write field
10/25/2005US6958928 Thin film magnetic memory device with memory cell having magnetic tunnel junction
10/25/2005US6958892 Magnetoresistive sensor with a thin antiferromagnetic layer for pinning antiparallel coupled tabs
10/25/2005US6958503 Nonvolatile magnetic memory device
10/25/2005US6958246 Methods of forming magnetoresistive memory devices
10/20/2005WO2005098953A1 Magnetization direction control method and mram using the same
10/20/2005US20050235118 Data storage circuit, data write method in the data storage circuit, and data storage device
10/20/2005US20050234659 Write line design in MRAM
10/20/2005US20050232006 Magnetic random access memory
10/20/2005US20050232003 MRAM including unit cell formed of one transistor and two magnetic tunnel junctions (MTJs) and method for fabricating the same
10/20/2005US20050232001 Semiconductor integrated circuit device and magnetic memory device capable of maintaining data integrity
10/20/2005US20050231857 Method of manufacturing spin valve film
10/20/2005US20050231854 Magnetoresistance effect film and method of manufacturing the same
10/20/2005US20050230771 Magnetic tunnel junction structures having bended tips at both ends thereof, magnetic random access memory cells employing the same and photomasks used in formation thereof
10/20/2005US20050230770 Magnetic sensor having vertical hall device and method for manufacturing the same
10/20/2005US20050230724 3D cross-point memory array with shared connections
10/19/2005EP1586913A2 Magnetoresistance effect film and method of manufacturing the same
10/19/2005EP1552526A4 Magnetic element utilizing spin transfer and an mram device using the magnetic element
10/19/2005EP1025448B1 Monolithic magnetic sensor having externally adjustable temperature compensation
10/19/2005CN1685536A CPP strucure magnetoresistance effect device and head slider
10/19/2005CN1685526A Spin transistor using spin filter effect and nonvolatile memory using spin transistor
10/19/2005CN1684145A Magnetoresistance effect film and method of manufacturing the same
10/19/2005CN1223999C Magneto resistance sensor and its making process
10/18/2005US6956765 Magneto-resistance effect element, magnetic memory and magnetic head
10/18/2005US6956762 Method and system for data communication on a chip
10/18/2005US6956257 Magnetic memory element and memory device including same
10/13/2005WO2005096371A1 Method of fabricating a mram device
10/13/2005US20050227185 Photoresists; photomasks; dry etching, undercutting
10/13/2005US20050226998 Fabrication of self-aligned reflective/protective overlays on magnetoresistance sensors, and the sensors
10/13/2005US20050226052 Novel oxidation structure/method to fabricate a high-performance magnetic tunneling junction mram
1 ... 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 ... 121