Patents
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
03/2006
03/08/2006EP1633007A2 Magnetoresistance effect device and method of production of the same
03/08/2006EP1631966A2 Transplanted magnetic random access memory (mram) devices on thermally-sensitive substrates using laser transfer and method for making the same
03/08/2006CN1744299A Memory cell with an asymmetrical area
03/08/2006CN1244799C Measuring device for contactlessly detecting ferromagnetic object
03/07/2006US7009876 MRAM and data writing method therefor
03/07/2006US7009875 Magnetic memory device structure
03/07/2006US7009874 Low remanence flux concentrator for MRAM devices
03/07/2006US7009873 Magnetic random access memory
03/07/2006US7009821 Ferromagnetic tunnel junction element exhibiting high magnetoresistivity at finite voltage and tunnel magnetoresistive head provided therewith, magnetic head slider, and magnetic disk drive
03/07/2006US7009278 3d rram
03/07/2006US7009266 Method and system for providing a magnetic element including passivation structures
03/07/2006US7008704 Narrow track width and high stability.
03/07/2006US7008703 Magnetic detecting element having second antiferromagnetic layer overlying second free magnetic layer extending in track width direction beyond track width
03/07/2006US7007373 GMR sensor for sensing magnetically recorded information on a data storage medium including a ferromagnetic free layer and a ferromagnetic pinned layer sandwiching an electrically conductive spacer layer.
03/02/2006WO2006022367A1 Magnetoresistive device and magnetic random access memory
03/02/2006WO2006022197A1 Memory cell and magnetic random access memory
03/02/2006WO2006022183A1 Magnetoresistacne element and production method therefor
03/02/2006WO2005067472A3 Synthetic antiferromagnet structures for use in mtjs in mram technology
03/02/2006US20060044703 Spin injection device, magnetic device using the same, magnetic thin film used in the same
03/02/2006US20060043443 Spin transistor using spin-filter effect and nonvolatile memory using spin transistor
03/02/2006DE10297743T5 Vorrichtung mit Magnetwiderstandseffekt und die Vorrichtung verwendender Magnetfeldsensor Device having magnetoresistance effect device and the magnetic field sensor used Direction
03/02/2006DE10155423B4 Verfahren zur homogenen Magnetisierung eines austauschgekoppelten Schichtsystems eines magneto-resistiven Bauelements, insbesondere eines Sensor-oder Logikelements A method for homogeneous magnetization of a layer exchange coupled system of a magneto-resistive component, in particular a sensor or logic element
03/01/2006EP1105879B1 Mram array having a plurality of memory banks
03/01/2006CN1742376A High performance spin-valve transistor
03/01/2006CN1741134A Magnetoresistive element, magnetic head, magnetic recording apparatus, and magnetic memory
03/01/2006CN1740804A Magnetic sensor and method of producing the same
03/01/2006CN1244154C Semiconductor storing device
02/2006
02/28/2006US7006373 Thin film magnetic memory device with memory cells including a tunnel magnetic resistive element
02/28/2006US7006372 Magnetic random access memory
02/28/2006US7006337 Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane GMR heads
02/28/2006US7005715 Magnetic storage device and method of fabricating the same
02/28/2006US7005201 Magnetic detecting element
02/28/2006US7005014 Seed layer on the side of an antiferromagnetic layer opposite to the interface between the antiferromagnetic layer and the ferromagnetic layer, to optimize the crystalline orientations of these layers; GMR (giant magnetoresistive)
02/23/2006US20060039194 Thin-film magnetic memory device executing data writing with data write magnetic fields in two directions
02/23/2006US20060039193 Thin film magnetic memory device suppressing internal magnetic noises
02/23/2006US20060038247 Magnetic memory device having uniform switching characteristics and capable of switching with low current and associated methods
02/23/2006US20060038246 Magnetoresistance effect device and method of production thereof
02/23/2006DE102005037425A1 Drehwinkelmelder Rotation angle detector
02/23/2006DE102004007421B4 XMR-Dünnschichtensensorelement mit zusätzlichen magnetfelderzeugenden Mitteln XMR thin film sensor element with additional magnetic field generating means
02/22/2006EP1502264B1 Layout for thermally selected cross-point mram cell
02/21/2006US7002841 MRAM and methods for manufacturing and driving the same
02/21/2006US7002840 Magnetoresistive element including a yoke that surrounds a conductor, magnetic memory cell and magnetic memory device including the same
02/21/2006US7002839 Magnetic ring unit and magnetic memory device
02/21/2006US7002831 Magnetic semiconductor memory device
02/21/2006US7002782 Magnetic sensing element biased by two antiferromagnetic layers above free magnetic layer and two hard bias layers at two sides of the free magnetic layer, and method for making the same
02/21/2006US7002781 Current-perpendicular-to-the-plane structure magnetoresistive element having the free and/or pinned layers being made of a granular film which includes an electrically conductive magnetic material and a dielectric material
02/21/2006US7002229 Self aligned Hall with field plate
02/21/2006US7002195 Magnetic random access memory (MRAM) cells having split sub-digit lines
02/21/2006US7002194 Via AP switching
02/21/2006US7001783 Mask schemes for patterning magnetic tunnel junctions
02/21/2006US7001779 Methods of forming semiconductor constructions
02/21/2006US7001777 Method of manufacturing a magnetic tunnel junction device
02/21/2006US7001680 Low resistance magnetic tunnel junction structure
02/16/2006US20060034118 Magneto-resistance effect element, magnetic memory and magnetic head
02/16/2006US20060033182 Method of fabricating a 3D RRAM
02/16/2006US20060033174 CMOS power sensor
02/16/2006DE102005033480A1 Magnetischer-Tunnelübergang-Element, MRAM-Einrichtung und Verfahren zum Herstellen eines Magnetischer-Tunnelübergang-Elements Magnetic tunnel junction element MRAM device and method of manufacturing a magnetic tunnel junction element
02/16/2006DE102005032979A1 Strukturieren eines magnetischen Tunnelübergang-Elements unter Verwendung von Nassätzen einer freien Schicht und unter Verwendung von Lift-Off-Techniken Patterning a magnetic tunnel junction element using a free layer and wet etching using lift-off techniques
02/15/2006EP1626393A2 Method and apparatus for manufacturing magnetoresistive element
02/15/2006EP1625589A2 Magnetoelectronics information device having a compound magnetic free layer
02/15/2006CN1735943A Magnetic storage device using ferromagnetic tunnel junction element
02/15/2006CN1734662A Magnetic tunnel junction structures, magnetic random access memory cells employing the same and photomasks used in formation thereof
02/15/2006CN1242429C Magnetic field element having a biasing magnetic layer structure
02/15/2006CN1242411C Magnetic RAM
02/14/2006US6999366 Magnetic memory including a sense result category between logic states
02/14/2006US6999340 Semiconductor memory device including reference memory cell and control method
02/14/2006US6999288 Magnetoresistive effect element and magnetic memory device
02/14/2006US6999286 Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane GMR heads
02/14/2006US6998840 Fluxgate sensor integrated having stacked magnetic cores in printed circuit board and method for manufacturing the same
02/14/2006US6998839 Magnetoresistive sensor having a strip-shaped conductor and a screening strip
02/14/2006US6998698 Memory cell with a perovskite structure varistor
02/14/2006US6998688 Arrangement for protecting a chip and checking its authenticity
02/14/2006US6998665 Magnetic memory device and manufacturing method therefor
02/14/2006US6998662 Method of making a magnetic tunnel junction device
02/14/2006US6998276 Magnetoresistive memory device and method for fabricating the same
02/14/2006US6998150 Method of adjusting CoFe free layer magnetostriction
02/09/2006US20060030058 High speed low power magnetic devices based on current induced spin-momentum transfer
02/09/2006US20060028866 Data storage device and associated method for writing data to, and reading data from an unpatterned magnetic layer
02/09/2006US20060028774 Antiferromagnetic stabilized storage layers in GMRAM storage devices
02/08/2006CN1732573A Magnetic switching device and magnetic memory using the same
02/08/2006CN1241203C Thin film magnet storage device capable of high-speed data reading data and working stably
02/07/2006US6996001 Magnetic memory device, write current drive circuit, and write current drive method
02/07/2006US6995962 Ferromagnetic double tunnel junction element with asymmetric energy band
02/07/2006US6995961 Magnetic sensing element comprising antiferromagnetic layer laminated on free magnetic layer
02/07/2006US6995960 Spin valve magnetoresistive sensor having CPP structure
02/07/2006US6995959 Integrated spin valve head
02/02/2006US20060023561 Nonvolatile magnetic memory device and manufacturing method thereof
02/02/2006US20060023375 Magnetoresistive sensor with a thin antiferromagnetic layer for pinning antiparallel coupled tabs
02/02/2006US20060023374 Exchange coupling film and magnetoresistive element using the same
02/02/2006US20060022387 Heat treatment apparatus
02/02/2006US20060022287 Semiconductor device and method for manufacturing the same
02/02/2006US20060022227 Novel buffer (seed) layer in a high performance magnetic tunneling junction MRAM
02/02/2006US20060022220 Spin-injection device and magnetic device using spin-injection device
02/01/2006CN2755623Y 磁传感器 Magnetic sensors
02/01/2006CN1729538A Bilayer CMP process to improve surface roughness of magnetic stack in MRAM technology
02/01/2006CN1729537A Magnetoresistive random access memory with reduced switching field
02/01/2006CN1728240A Method and apparatus for testing tunnel magnetoresistive effect element, manufacturing method of tunnel magnetoresistive effect element and tunnel magnetoresistive effect element
01/2006
01/31/2006US6992924 Magnetic memory and method for optimizing write current in a magnetic memory
01/31/2006US6992923 Single transistor type magnetic random access memory device and method of operating and manufacturing the same
01/31/2006US6992921 Magnetic random access memory and data write method for the same
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