Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
12/2005
12/22/2005US20050281078 Method and system for data communication on a chip
12/22/2005US20050280960 Magnetic random access memory array with coupled soft adjacent magnetic layer
12/22/2005US20050280956 Exchange coupling film and magnetoresistive element using the same
12/22/2005US20050280058 Re-configurable logic elements using heat assisted magnetic tunneling elements
12/22/2005US20050280043 Magnetoresistive element and magnetic memory
12/22/2005US20050280040 Methods of patterning a magnetic stack of a magnetic memory cell and structures thereof
12/22/2005DE112004000152T5 Magnetspeicher, Schreibstrom-Treiberschaltung und Schreibstrom-Treiberverfahren Magnetic memory write current and write current driver circuit driving method
12/22/2005DE10158795B4 Magnetoresistive Speicherzelle mit dynamischer Referenzschicht Magnetoresistive memory cell with dynamic reference layer
12/21/2005EP1607980A2 A novel capping structure for enhancing dR/R of the MTJ device
12/21/2005EP1607719A2 Magnetic sensor
12/21/2005EP1435101B1 Spin-valve magnetoresistive device with enhanced performance
12/21/2005EP1305795A4 All metal giant magnetoresistive memory
12/21/2005CN1232985C Magnetic random access storage and method of writing and reading data
12/20/2005US6977839 Magnetic memory storage device
12/20/2005US6977801 Magnetoresistive device with exchange-coupled structure having half-metallic ferromagnetic Heusler alloy in the pinned layer
12/20/2005US6977181 MTJ stack with crystallization inhibiting layer
12/15/2005US20050277207 Mask schemes for patterning magnetic tunnel junctions
12/15/2005US20050277206 Structure and method of patterning a magnetic tunnel junction stack for a magneto-resistive random access memory
12/15/2005US20050276997 Magnetic detecting element having antiferromagnetic film having predetermined space in track width direction and method for manufacturing the same
12/15/2005US20050276111 Memory device capable of stable data writing
12/15/2005US20050276099 Novel capping structure for enhancing dR/R of the MTJ device
12/15/2005US20050276090 Nonvolatile magnetic memory device and photomask
12/15/2005US20050275003 Crosspoint structure semiconductor memory device, and manufacturing method thereof
12/15/2005US20050275000 MRAM and method of manufacturing the same
12/15/2005US20050274998 Method and apparatus for oxidizing conductive redeposition in TMR sensors
12/15/2005US20050274997 Method for fabricating magnetic field concentrators as liners around conductive wires in microelectronic devices
12/15/2005US20050274984 Semiconductor integrated circuit device and method of manufacturing the same
12/14/2005EP1605441A2 Magnetic spin valve sensor having an exchange stabilization layer recessed from the active track edge
12/14/2005EP1604398A2 Magnetic memory cell junction and method for forming a magnetic memory cell junction
12/14/2005CN1708810A Magnetoresistive random access memory
12/14/2005CN1707689A Magnetic random access memory
12/14/2005CN1707617A Magnetoresistance effect element
12/14/2005CN1707616A Magnetoresistance effect film and magnetoresistance effect head
12/14/2005CN1231917C Thin film magnet memory capable of stably reading- out data and writing- in data
12/13/2005US6975534 Thin film magnetic memory device having a highly integrated memory array
12/13/2005US6975533 Hybrid semiconductor—magnetic spin based memory with low transmission barrier
12/13/2005US6974708 Oxidation structure/method to fabricate a high-performance magnetic tunneling junction MRAM
12/08/2005WO2005117128A1 Tunnel junction barrier layer comprising a diluted semiconductor with spin sensitivity
12/08/2005US20050270887 Magnetic random access memory
12/08/2005US20050270831 Magnetic non-volatile memory coil layout architecture and process integration scheme
12/08/2005US20050270830 Integrated circuit structure formed by damascene process
12/08/2005US20050270828 Magnetic memory device and manufacturing method thereof
12/08/2005US20050270705 Magneto-resistive element, thin film magnetic head, magnetic head and magnetic recording/reproducing apparatus
12/08/2005US20050270704 Magnetoresistance effect film and magnetoresistance effect head
12/08/2005US20050270703 CPP giant magnetoresistive head including pinned magnetic layer that extends in the height direction
12/08/2005US20050270702 Magnetoresistance effect element
12/08/2005US20050270022 Magnetoresistive layer system and sensor element having this layer system
12/08/2005US20050270018 Magnetic detector
12/08/2005US20050269612 Solid-state component based on current-induced magnetization reversal
12/08/2005DE19922136B4 Magnetfeld-Erfassungselement und Magnetfeld-Erfassungseinrichtung Magnetic field sensing element and the magnetic field detection means
12/07/2005EP1603168A1 Field-effect transistor with spin-dependent transmission characteristic and nonvolatile memory using same
12/07/2005EP1603163A2 Three-dimensional semiconductor device
12/07/2005EP1602936A1 Magnetic field detecting element and method for manufacturing the same
12/07/2005EP1601629A1 Ferromagnetic material
12/06/2005US6972992 Tunneling magnetoresistive random access memory with a multilayer fixed layer
12/06/2005US6972991 Thin film magnetic memory device suppressing internal magnetic noises
12/06/2005US6972934 Synthetic anti-parallel spin valve with thin AFM layer for very high density application
12/06/2005US6972468 Method of manufacturing magnetic memory device, and magnetic memory device
12/06/2005US6972265 Metal etch process selective to metallic insulating materials
12/01/2005US20050266274 Magnetic sensor using half-metal for pinned magnetic layer
12/01/2005US20050264954 Free layer for CPP GMR having iron rich NiFe
12/01/2005US20050264905 Method to protect a GMR head from electrostatic damage during the manufacturing process
12/01/2005US20050264281 Magnetic sensor
11/2005
11/30/2005EP1600977A2 Multi-bit magnetic random acces memory device
11/30/2005CN1703739A Current-perpendicular-to-the-plane structure magnetoresistive element and head slider
11/30/2005CN1229881C Magnetic sensor
11/30/2005CN1229880C Magnetic resistance element
11/29/2005US6970379 System and method for storing data in an unpatterned, continuous magnetic layer
11/29/2005US6970378 Thin-film magnetic memory device executing data writing with data write magnetic fields in two directions
11/29/2005US6970377 Thin film magnetic memory device for conducting data write operation by application of a magnetic field
11/29/2005US6970376 Magnetic random access memory and method of writing data in magnetic random access memory
11/29/2005US6970333 Layer system having an increased magnetoresistive effect and use of the same, wherein a first layer of an artificial antiferromagnet has a relatively low cobalt content
11/29/2005US6970332 Magnetoresistive head with spin valve film magnetic sensor element
11/29/2005US6969895 MRAM cell with flat topography and controlled bit line to free layer distance and method of manufacture
11/29/2005US6969625 CMP assisted liftoff micropatterning
11/24/2005WO2005112086A1 Manganese doped magnetic semiconductors
11/24/2005WO2005112085A1 Copper doped magnetic semiconductors
11/24/2005US20050260773 MRAM cell structure and method of fabrication
11/24/2005US20050260772 A method of forming a magnetic tunneling junction (mtj) mram device and a tunneling magnetoresistive (tmr) read head
11/24/2005US20050260332 Formation of combinatorial arrays of materials using solution-based methodologies
11/24/2005US20050259464 Magnetic random access memory
11/24/2005US20050259463 Multi-bit magnetic random access memory device
11/24/2005US20050258469 Magnetic memory with self-aligned magnetic keeper structure
11/24/2005US20050258403 Method of preparing polymer composite using unidirectionally solidified giant magnetostrictive material
11/23/2005EP1598876A1 Semiconductor sensor and method for manufacturing same
11/23/2005EP1598865A1 Mram with a novel buffer layer
11/23/2005EP1402585B1 Method for mass production of a plurality of magnetic sensors
11/23/2005CN1701443A Magnetic storage device using ferromagnetic tunnel junction element
11/23/2005CN1228764C Magneto-resistance element with current perpendicular to membrane surface structure
11/22/2005US6967864 Semiconductor memory device including magneto resistive element and method of fabricating the same
11/22/2005US6967862 Semiconductor memory device with magnetic disturbance reduced
11/22/2005US6967386 Magnetic memory device
11/22/2005US6967366 Magnetoresistive random access memory with reduced switching field variation
11/22/2005US6967055 Multilayered film developing a magnetoresistive effect, which is present between an upper shielding layer and a lower shielding layer both formed above an AlTiC substrate, a recess for defining the lower shielding layer is formed in an
11/17/2005WO2005109517A2 Semiconductor device using location and sign of the spin of electrons
11/17/2005WO2004095515A8 Methods for contracting conducting layers overlying magnetoelectronic elements of mram devices
11/17/2005US20050254294 Magnetic random access memory
11/17/2005US20050254293 Novel structure/method to fabricate a high-performance magnetic tunneling junction MRAM
11/17/2005US20050254290 Thin film magnetic memory device including memory cells having a magnetic tunnel junction
11/17/2005US20050254289 Magnetic memory device and method of manufacturing the same
1 ... 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 ... 121