Patents
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
04/2006
04/18/2006US7031123 Magneto resistive head and magnetic recording apparatus
04/18/2006US7031119 CPP-type magnetic head with less deformation and a magnetic recording/reproducing system using the same
04/18/2006US7031111 Ferromagnetic tunnel magnetoresistive devices and magnetic head
04/18/2006US7030628 Method and device for evaluating charge potential
04/18/2006US7030601 Circuit configuration for a gradometric current sensor with a bridge circuit for measuring gradients of magnetic field strength and a sensor equipped with this circuit configuration
04/18/2006US7029923 Method for manufacture of magneto-resistive bit structure
04/18/2006US7029771 Exchange coupling region between fixed magnetic and antiferromagnetic layers is specifically defined; spin-valve type thin film element mounted on hard disc devices
04/18/2006US7029770 Exchange-coupled film, spin valve film, thin film magnetic head, magnetic head apparatus, and magnetic recording/reproducing apparatus
04/13/2006WO2005022622A9 Dry etching process and method for manufacturing magnetic memory device
04/13/2006US20060077598 Resistor having a predetermined temperature coefficient
04/13/2006US20060077032 Magnetoresistive element
04/13/2006US20060076635 Magnetoresistive memory device assemblies, and methods of forming magnetoresistive memory device assemblies
04/13/2006DE112004001023T5 Strukturierung eines magnetischen Tunnelübergangs unter Verwendung von SiC oder SiN Structuring a magnetic tunnel junction using SiC or SiN
04/13/2006DE112004001017T5 Integrationsschema zum Vermeiden von Plasmaschäden in MRAM Technologie Integration scheme for avoiding plasma damage in MRAM technology
04/12/2006EP1646087A1 Surface spintronics device
04/12/2006CN1758371A Magnetic memory and manufacturing method thereof
04/12/2006CN1758341A Magnetoresistive element, magnetic head, magnetic recording apparatus, and magnetic memory
04/12/2006CN1251238C Circuit for non-destructive, self-normalizing reading-out of MRAM memory cells
04/12/2006CN1251183C Recording/reproducing separated type magnetic head having differential bias type magnetic domain control structure
04/12/2006CN1251182C Magnetic sensor
04/12/2006CN1251181C Magnetic-tunnel-effect type magnetic head and its producing method thereof
04/12/2006CN1251180C Magnetic-tunnel effect type magnetic head and recorder/player
04/11/2006US7027325 Magnetic random access memory
04/11/2006US7027322 EPIR device and semiconductor devices utilizing the same
04/11/2006US7027320 Soft-reference magnetic memory digitized device and method of operation
04/11/2006US7027319 Retrieving data stored in a magnetic integrated memory
04/11/2006US7027272 Magnetoresistance effect device, and magnetoresistance effect magnetic head
04/11/2006US7027271 Magnetoresistive device in a thin-film magnetic head and method of manufacturing same having particular electrode overlay configuration
04/11/2006US7026910 GMR module
04/11/2006US7026677 Magnetoresistive element, magnetic memory cell, and magnetic memory device, and method for manufacturing the same
04/11/2006US7026673 Low magnetization materials for high performance magnetic memory devices
04/11/2006US7026671 Magnetoresistive effect element, magnetic memory device and manufacturing method of magnetoresistive effect element and magnetic memory device
04/11/2006US7026063 Spin-valve type magnetoresistance sensor and thin-film magnetic head
04/11/2006CA2351525C Magnetoresistive sensor having interleaved elements
04/06/2006WO2006035943A1 Magnetic memory
04/06/2006WO2006035342A1 Magnetic sensor for input devices
04/06/2006US20060072250 Magnetic disk apparatus and method for manufacturing same
04/06/2006US20060071287 Magnetoresistance effect element, magnetic head and magnetic reproducing apparatus
04/05/2006EP1642343A1 Oblique deposition to induce magnetic anisotropy for mram cells
04/05/2006EP0896734B1 All-metal, giant magnetoresistive, solid-state component
04/05/2006CN1757121A Field-effect transistor with spin-dependent transmission characteristic and nonvolatile memory using same
04/05/2006CN1755963A Magnetoresistance effect device and method of production of the same
04/05/2006CN1755832A Magnetic random access memory devices including contact plugs between magnetic tunnel junction structures and substrates and related methods
04/05/2006CN1755387A Magnetic sensor using giant magnetoresistive elements and method for manufacturing the same
04/05/2006CN1249815C Information memory and manufacturing method therefor
04/05/2006CN1249727C An analog functional module using magnetoresistive memory technology
04/04/2006US7023725 Magnetic memory
04/04/2006US7023310 Method for manufacturing magnetic sensor, magnet array used in the method, and method for manufacturing the magnet array
03/2006
03/30/2006US20060067111 Magnetic storage cell, magnetic memory device and magnetic memory device manufacturing method
03/30/2006US20060067017 Magnetoresistive effect element, magnetic head and magnetic reproducing apparatus
03/30/2006US20060067003 Three terminal magnetic sensor (TTM) having a metal layer formed in-plane and in contact with the base region for reduced base resistance
03/30/2006DE102005043329A1 Spintransistor und Herstellverfahren für einen solchen Spin transistor and manufacturing method for such a
03/30/2006DE102005043328A1 Magnetowiderstandstransistor und Steuerungsverfahren für einen solchen Magneto-resistance transistor and control method thereof
03/30/2006DE102004043737A1 Vorrichtung zum Erfassen des Gradienten eines Magnetfeldes und Verfahren zur Herstellung der Vorrichtung Means for detecting the gradient of a magnetic field and method of manufacturing the device
03/29/2006EP1639656A2 Thermally operated switch control memory cell
03/29/2006EP1639653A1 Self-aligned conductive lines for fet-based magnetic random access memory devices and method of forming the same
03/29/2006CN1754270A Semiconductor sensor and method for manufacturing same
03/29/2006CN1248325C Tunnel effect magneto-resistance device and preparing method
03/28/2006US7020013 Magnetic field sensor using spin polarized current
03/28/2006US7020011 High density magnetoresistance memory and manufacturing method thereof
03/28/2006US7020010 Magnetic storage apparatus using ferromagnetic tunnel junction devices
03/28/2006US7019950 Magnetoresistive sensor having bias magnets with steep endwalls
03/28/2006US7019948 Thin film magnetic head, magnetic head device and magnetic recording/reproducing device
03/28/2006US7019371 Current-in-plane magnetic sensor including a trilayer structure
03/28/2006US7019370 Method for manufacturing magnetic random access memory
03/28/2006US7018937 Compositions for removal of processing byproducts and method for using same
03/28/2006US7018725 Providing microscopic magnetic magnetoresistive effect element and microscopic magnetoresistive effect memory cell which include ferromagnetic film and are easily operable as result of strength of antimagnetic component of ferromagnetic film
03/23/2006US20060063278 Methods of forming magnetic shielding for a thin-film memory element
03/23/2006US20060061919 Method of adjusting CoFe free layer magnetostriction
03/23/2006US20060061914 Magnetoresistive element with oxide magnetic layers and metal magnetic films deposited thereon
03/23/2006DE10140043B4 Schichtensystem mit erhöhtem magnetoresistiven Effekt sowie Verwendung desselben The same layer system with increased magnetoresistive effect and use
03/22/2006EP1636810A1 Method of manufacturing a device with a magnetic layer-structure
03/22/2006CN1750288A Magnetoresistive element
03/22/2006CN1750181A Semimetal magnetic material with high spinning polarizability
03/22/2006CN1750168A Magnetic memory device and its operation method and producing method
03/22/2006CN1750127A Magnetic head, head suspension assembly, and magnetic reproduction device
03/21/2006US7016223 Magnetoelectronic memory element with inductively coupled write wires
03/21/2006US7016221 Magnetoresistive effect element, magnetic memory device and method of fabricating the same
03/21/2006US7016170 Magnetic head and tunnel junction magneto-resistive head having plural ferromagnetic layers associated with an antiferromagnetic coupling layer for magnetically biasing the sensing free layer
03/21/2006US7016168 Method of increasing CPP GMR in a spin valve structure
03/21/2006US7016162 Magnetoresistance effect element, magnetic head and magnetic reproducing system having pillar electrodes
03/21/2006US7016161 Magnetic head, magnetic head gimbal assembly, magnetic recording and reproducing apparatus, and magnetic memory
03/21/2006US7015688 Device for adjustment of rotation angles
03/21/2006US7015555 Magnetoresistive random access memory with high selectivity
03/21/2006US7015524 Method of etching magnetic material, magnetoresistive film and magnetic random access memory
03/21/2006US7015059 Thin film magnetic memory device and manufacturing method therefor
03/16/2006WO2006028101A1 Spintronics material and tmr device
03/16/2006WO2006027920A1 Nonvolatile semiconductor storage device
03/16/2006US20060057745 Novel oxidation structure/method to fabricate a high-performance magnetic tunneling junction MRAM
03/16/2006US20060056223 Mram-cell and array-architecture with maximum read-out signal and reduced electromagnetic interference
03/16/2006US20060056114 Magnetic tunnel device and magnetic memory using same
03/15/2006CN1748268A Heat treatment system
03/15/2006CN1747060A Methods of operating magnetic random access memory device using spin injection and related devices
03/15/2006CN1746980A Method and apparatus for manufacturing magnetoresistive element
03/15/2006CN1746979A Method for reactive sputter deposition of a magnesium oxide (mgo) tunnel barrier in a magnetic tunnel junction
03/15/2006CN1245762C Reluctance storage element
03/09/2006US20060049473 Spin polarization of charge carriers
03/09/2006US20060049472 Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements
03/09/2006US20060049441 Magnetoresistive random access memory with reduced switching field variation
03/09/2006DE102004042338A1 MRAM mit verbesserten Speicher- und Ausleseeigenschaften MRAM with improved storage and readout characteristics
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