Patents
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
05/1997
05/07/1997EP0772250A1 Ferromagnetic GMR material
05/07/1997DE19635425A1 Method for producing conductive patterns for magnetoresistive heads
04/1997
04/23/1997CN1148234A Magneto-resistive effect element and storage element
04/22/1997US5622874 Process for forming a magnetoresistive sensor for a read/write head
04/15/1997US5621593 Magnetoresistive head and method of fabricating the same
04/15/1997US5621320 Magnetoresistance type sensor device for detecting change of magnetic field
04/15/1997US5621319 Chopped hall sensor with synchronously chopped sample-and-hold circuit
04/15/1997US5620784 Multilayer structure on substrate consisting of first ferromagnetic layer, nonmagnetic metal film, second ferromagnetic layer having different coercive force than first
04/09/1997EP0766831A1 Magnetic field responsive device
04/09/1997EP0766830A1 Single domain mr sensors using permanent magnet stabilization
04/08/1997US5618738 Manufacturing method for magnetoresistance elements
04/01/1997US5617289 Magnetic reinitialization of thin film magnetoresistive reproducing heads at the suspension level of media drive manufacturing
04/01/1997US5617277 Magnetoresistive read head with back filled gap insulation layers
04/01/1997US5617071 Magnetoresistive structure comprising ferromagnetic thin films and intermediate alloy layer having magnetic concentrator and shielding permeable masses
04/01/1997US5616370 Artificial multilayer and method of manufacturing the same
03/1997
03/27/1997WO1997011499A1 Magnetic transducer
03/25/1997US5614754 Hall device
03/20/1997DE3991162C2 Semiconductor device using Hall EMF
03/19/1997EP0763832A1 Bistable magnetic element and method of manufacturing the same
03/19/1997CN2249967Y Electrodes of InSt Hall elements
03/12/1997CN2249453Y 霍尔电子电位器 Hall electronic potentiometer
03/11/1997US5610518 Method and apparatus for detecting small magnetizable particles and flaws in nonmagnetic conductors
03/04/1997US5608593 Shaped spin valve type magnetoresistive transducer and method for fabricating the same incorporating domain stabilization technique
02/1997
02/26/1997EP0759619A2 Magnetoresistive element and memory element
02/26/1997EP0759202A1 Shaped spin valve type magnetoresistive transducer and method for fabricating the same incorporating domain stabilization technique
02/25/1997US5605860 Method of fabricating semiconductor thin film and method of fabrication Hall-effect device
02/18/1997US5604433 Offset compensation for magnetic-field sensor with Hall effect device
02/13/1997WO1997005664A1 Magnetoresistance element and its manufacture
02/04/1997US5600297 Magnetic field sensor
01/1997
01/28/1997US5597644 Glass glaze
01/22/1997EP0755086A2 Magnetoresistive device
01/22/1997EP0755048A1 Magnetoresistive recording head
01/21/1997US5595830 Magnetoresistive structure with alloy layer having two substantially immiscible components
01/15/1997EP0753842A2 Thin film magnetic head including vias formed in alumina layer and process for making the same
01/14/1997US5594933 Magnetoresistance film which is a matrix of at least two specified metals having included submicron particles of a specified magnetic metal or alloy
01/07/1997US5592082 Magnetic sensor with permanent magnet bias layers
01/07/1997US5592081 Magnetic Sensor
01/07/1997US5591996 Recirculating charge transfer magnetic field sensor
01/07/1997US5591533 Thin film magnetic transducer having a stable soft film for reducing asymmetry variations
01/07/1997US5591532 Giant magnetoresistance single film alloys
01/02/1997EP0751499A1 Magnetoresistive sensor
12/1996
12/31/1996US5589278 Single crystalline substrate having oriented epitaxial buffer layer, oriented iron/chromium superlattice film all of specified crystal structure
12/24/1996US5587943 Nonvolatile magnetoresistive memory with fully closed flux operation
12/17/1996US5585986 Digital magnetoresistive sensor based on the giant magnetoresistance effect
12/17/1996US5585775 Integrated magnetoresistive sensor
12/17/1996US5585198 Magnetorsistance effect element
12/17/1996US5585196 Multilayer
12/12/1996DE19622561A1 Hall-effect sensor e.g. for detecting speed of ferromagnetic pinion
12/12/1996DE19622040A1 Stark magnetoresistives Element und Verfahren zu dessen Herstellung Stark magnetoresistive element and process for its preparation
12/11/1996EP0747886A2 Soft adjacent layer biased magnetoresistive device incorporating a natural flux closure design utilizing coplanar permanent magnet thin film stabilization, and process for manufacturing same
12/10/1996US5583725 Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor
12/10/1996US5583367 Monolithic integrated sensor circuit in CMOS technology
12/10/1996US5582860 Controlling magnetic and electrical properties by localized annealing of selected areas
12/05/1996WO1996038740A1 Device for magnetising magnetoresistive thin film sensor elements in a bridge connection
12/05/1996WO1996038739A1 Magnetic field sensor with a bridge arrangement of magneto-resistive bridging elements
12/05/1996WO1996038738A1 Magnetizing arrangement for a magneto-resistive thin-film sensor element with a bias layer part
12/05/1996DE19520206A1 Magnetfeldsensor mit einer Brückenschaltung von magnetoresistiven Brückenelementen Magnetic field sensor with a bridge circuit from magnetoresistive bridge elements
12/05/1996DE19520178A1 Magnetisierungsvorrichtung für magnetoresistive Dünnschicht-Sensorelemente in einer Brückenschaltung Magnetizing apparatus for thin-film magnetoresistive sensor elements in a bridge circuit
12/05/1996DE19520172A1 Magnetisierungseinrichtung für ein magnetoresistives Dünnschicht-Sensorelement mit einem Biasschichtteil Magnetizing device for a magnetoresistive thin-film sensor element with a bias layer part
11/1996
11/27/1996EP0744076A1 Magnetoresistive structure with alloy layer
11/27/1996CN1136714A Lateral Hall device
11/26/1996US5578385 Magnetoresistance effect element
11/12/1996US5574605 Antiferromagnetic exchange coupling in magnetoresistive spin valve sensors
11/12/1996US5573809 Process for forming a magnetoresistive device
10/1996
10/30/1996EP0739490A1 Method for making magnetoresistive transducers
10/29/1996US5569617 Method of making integrated spacer for magnetoresistive RAM
10/29/1996US5569544 Magnetoresistive structure comprising ferromagnetic thin films and intermediate layers of less than 30 angstroms formed of alloys having immiscible components
10/22/1996US5568115 Artificial lattice film and magneto-resistance effect element using the same
10/15/1996US5565695 Magnetic spin transistor hybrid circuit element
10/15/1996US5565236 Forming layer of copper, nickel, and cobalt by evaporation or electroplating, precipitating magnetic particles within the layer
10/15/1996US5564194 Geomagnetic direction sensor
10/08/1996US5563331 Comprising at least two layers with differing temperature correlations of electrical resistance
10/02/1996EP0735600A2 Lateral hall element
10/01/1996US5561368 Bridge circuit magnetic field sensor having spin valve magnetoresistive elements formed on common substrate
09/1996
09/26/1996EP0744076A4 Magnetoresistive structure with alloy layer
09/25/1996EP0733911A2 Recirculating charge transfer magnetic field sensor
09/25/1996EP0733263A1 Amorphous permalloy films and method of preparing the same
09/25/1996CN1032888C Hall sensor with automatic compensation
09/24/1996US5559433 Magnetic sensor device including apparatus for aligning a magnetoresistance element and a circuit board and a method of manufacturing the magnetoresistive device
09/19/1996WO1996028812A1 Shaped spin valve type magnetoresistive transducer and method for fabricating the same incorporating domain stabilization technique
09/18/1996EP0732595A2 Magnetic field detector
09/18/1996EP0732430A2 Manganese oxide-based single crystal having a laminar structure and method for the preparation thereof
09/18/1996EP0731969A1 Magnetic multilayer device including a resonant-tunneling double-barrier structure
09/12/1996WO1996007927A3 Transconductance amplifier having a digitally variable transconductance as well as a variable gain stage and an automatic gain control circuit comprising such a variable gain stage
09/12/1996DE19539722A1 Magnetoresistance sensor for detecting magnetic field changes
09/04/1996EP0729587A1 Process for tuning a magneto-resistive sensor
09/04/1996EP0729582A1 Speed and/or position incremental sensor
09/03/1996US5552949 Magnetoresistance effect element with improved antiferromagnetic layer
09/03/1996US5552706 Magnetoresistive magnetic field sensor divided into a plurality of subelements which are arrayed spatially in series but are connected electrically in parallel
09/03/1996US5552589 Permanent magnet assembly with MR element for detection/authentication of magnetic documents
08/1996
08/27/1996US5550469 Hall-effect device driver with temperature-dependent sensitivity compensation
08/27/1996US5550101 Variations in current density
08/27/1996US5549978 Magnetoresistance effect element
08/27/1996US5549977 Article comprising magnetoresistive material
08/22/1996WO1996025740A1 Nonvolatile magnetoresistive memory with fully closed-flux operation
08/21/1996EP0727086A1 Ultra high density, non-volatile ferromagnetic random access memory
08/21/1996EP0727049A1 Transconductance amplifier having a digitally variable transconductance as well as a variable gain stage and an automatic gain control circuit comprising such a variable gain stage
08/21/1996CN1129360A Electrode of indium antimonide Hall unit and production method thereof
08/20/1996US5548151 Hall element for detecting a magnetic field perpendicular to a substrate
08/15/1996WO1996024955A1 Magnetoresistive structure with alloy layer