Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364) |
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08/11/1998 | US5793788 Semiconductor light emitting element with p-type non-alloy electrode including a platinum layer and method for fabricating the same |
08/11/1998 | US5793405 LED printhead, LED array chip therefor and method of making LED array chip |
08/11/1998 | US5793163 Driving circuit for light emitting element |
08/11/1998 | US5793062 Transparent substrate light emitting diodes with directed light output |
08/11/1998 | US5793061 Group-III nitride based light emitter |
08/11/1998 | US5793060 SOI Optical semiconductor device |
08/11/1998 | US5793054 Gallium nitride type compound semiconductor light emitting element |
08/11/1998 | US5792698 Method of manufacturing semiconductor light emitting device |
08/06/1998 | WO1998034304A1 Semiconductor laser device |
08/06/1998 | WO1998034285A1 Light emitting element, semiconductor light emitting device, and method for manufacturing them |
08/06/1998 | WO1998034284A1 Optoelectronic semiconductor component |
08/06/1998 | DE19703615A1 Optoelektronisches Halbleiterbauelement Optoelectronic semiconductor component |
08/05/1998 | EP0856600A1 LiGa02 single crystal, single-crystal substrate, and method of manufacturing the same |
08/05/1998 | EP0856411A1 Recording head and image forming apparatus using the same |
08/05/1998 | EP0856202A2 Visible light emitting devices including uv-light emitting diode and uv-excitable, visible light emitting phosphor, and method of producing such devices |
08/05/1998 | CN1189702A Light emitting display element, method for connecting same to electric wiring substrate and method of manufacturing same |
08/05/1998 | CN1189701A Gan related compound semiconductor and process for producing the same |
08/04/1998 | US5789773 Aluminum, gallium, indium phosphide |
08/04/1998 | US5789772 Semi-insulating surface light emitting devices |
08/04/1998 | US5789768 Light emitting diode having transparent conductive oxide formed on the contact layer |
08/04/1998 | US5789273 Method for fabricating compound semiconductor laser |
08/04/1998 | US5789265 Gallium nitride, dry etching |
07/30/1998 | WO1998033219A1 p-TYPE SEMICONDUCTOR, METHOD FOR MANUFACTURING THE SAME, SEMICONDUCTOR DEVICE, PHOTOVOLTAIC ELEMENT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
07/30/1998 | DE19803006A1 Compound semiconductor light emission element especially LED |
07/29/1998 | EP0855751A2 Light emitting diode |
07/29/1998 | CN1189087A Method for mounting optical semiconductor device on supporting substrate and their two formed component |
07/28/1998 | US5787104 Active layer of hexagonal system compound; formed in c-axis direction; anisotropic strain |
07/28/1998 | US5786606 Semiconductor light-emitting device |
07/28/1998 | US5786603 Reducing excessive voltage drop at n-n hetero-interface lengthening service life of device |
07/28/1998 | US5786269 II-VI group compound semiconductor device and method for manufacturing the same |
07/28/1998 | US5785418 Thermally protected LED array |
07/28/1998 | CA2055673C Semiconductor optical devices with np current blocking layers of wide-band gap materials |
07/23/1998 | DE19703072A1 Aluminium arsenide-gallium arsenide epitaxial layer structure |
07/22/1998 | EP0854524A2 Nitride semi-conductor device and method of manufacture |
07/22/1998 | EP0854523A2 Semiconductor light emitting device and its manufacturing method |
07/22/1998 | EP0854520A2 Method for mounting optical semiconductor device on supporting substrate |
07/22/1998 | CN1039194C Improved pulsatile once-a-day-delivery systems for minocycline |
07/21/1998 | US5784513 Fiber-detachable-type optical module |
07/21/1998 | US5784511 Connector with magnet being held to an apparatus for data transmission/reception |
07/21/1998 | US5783856 Method for fabricating self-assembling microstructures |
07/21/1998 | US5783844 Optical semiconductor device |
07/21/1998 | US5783498 Method of forming silicon dioxide film containing germanium nanocrystals |
07/21/1998 | US5783477 Method for bonding compounds semiconductor wafers to create an ohmic interface |
07/21/1998 | US5782996 Sandwitched zinc telluride and zinc selenide layer is graded from zinc selenide to zinc telluride |
07/21/1998 | US5782555 Heat dissipating L.E.D. traffic light |
07/20/1998 | CA2219166A1 Composite unit of optical semiconductor device and supporting substrate and method for mounting optical semiconductor device on supporting substrate |
07/16/1998 | WO1998031055A1 Nitride semiconductor device |
07/16/1998 | DE19742840A1 Overcurrent protection system e.g. for light-emitting diode (LED) for optical communications |
07/16/1998 | CA2529996A1 Nitride semiconductor device |
07/15/1998 | EP0853334A1 Optoelectronic material, device using the same, and method for manufacturing the same |
07/15/1998 | EP0852818A1 Dynamic infrared scene projector |
07/15/1998 | EP0852817A1 Surface light-emitting element and self-scanning type light-emitting device |
07/15/1998 | EP0852816A2 Optoelectronic semiconductor component |
07/15/1998 | EP0852815A1 Encapsulation of an optoelectronic semiconductor component with an optical element and method of producing the same |
07/15/1998 | EP0752165B1 Quantum-layer structure |
07/14/1998 | US5781575 Surface emitting laser device with a vertical cavity |
07/14/1998 | US5780876 Evaporation barrier layer prevents liberation of indium from active layer |
07/14/1998 | US5780873 Semiconductor device capable of easily forming cavity and its manufacturing method |
07/14/1998 | US5780867 Used for chemical sensing, fiber optic gyroscopes, wavelength division multiplexed fiber optic data link for automobiles and aircraft |
07/14/1998 | US5780834 Imaging and illumination optics assembly |
07/14/1998 | US5780355 UV assisted gallium nitride growth |
07/14/1998 | US5780322 Method for growing a II-VI compound semiconductor layer containing cadmium and method for fabricating a semiconductor laser |
07/14/1998 | US5780321 Forming indium-gallium-aluminum-phosphide epilayer |
07/14/1998 | US5780320 Method of manufacturing a semiconductor laser including two sets of dicing grooves |
07/14/1998 | US5779924 Ordered interface texturing for a light emitting device |
07/14/1998 | CA2093959C Quasi-resonant diode drive current source |
07/08/1998 | EP0852416A1 Semiconductor material, method of producing the semiconductor material, and semiconductor device |
07/08/1998 | EP0852402A1 A GaAsP epitaxial wafer and a method for manufacturing it |
07/08/1998 | CN1187044A Preparation of single layer film electroluminescent device |
07/07/1998 | US5777433 High refractive index package material and a light emitting device encapsulated with such material |
07/07/1998 | US5777350 Nitride semiconductor light-emitting device |
07/07/1998 | US5777349 Semiconductor light emitting device |
07/07/1998 | US5776793 Vapor deposition forming p/n junction blue light diode |
07/02/1998 | WO1998021758A3 Electroluminescent device made of organic material |
07/02/1998 | DE19757850A1 Light emitting display element e.g. LED chip |
07/02/1998 | DE19756856A1 Semiconductor light emitting device especially LED |
07/01/1998 | EP0851542A2 Gallium nitride based compound semiconductor laser and method of forming the same |
07/01/1998 | EP0851513A2 Method of producing semiconductor member and method of producing solar cell |
07/01/1998 | EP0850799A2 Indication unit with transparent indicating element |
07/01/1998 | EP0850194A1 Process for preparing a nanocrystalline material |
06/30/1998 | US5773850 Semiconductor device having a ZnCdSe buffer layer with a II-VI compound semiconductor layer containing Te grown thereon |
06/30/1998 | US5772759 Process for producing p-type doped layers, in particular, in II-VI semiconductors |
06/30/1998 | US5771562 Passivation of organic devices |
06/24/1998 | EP0849812A2 LED with omnidirectional light outcoupler |
06/24/1998 | EP0849380A2 Method for fabrication of nitride containing III-V semiconductor layers |
06/24/1998 | CN1185663A Semi-conductor luminous device with high luminous efficiency |
06/23/1998 | US5770887 GaN single crystal |
06/23/1998 | US5770473 Packaging of high power semiconductor lasers |
06/23/1998 | US5769521 Light source device and method of producing same |
06/18/1998 | WO1998025749A1 Injection molding encapsulation for an electronic device directly onto a substrate |
06/17/1998 | CN1185234A Electroluminescent device comprising porous silicon |
06/17/1998 | CN1185042A Light-emitting diode white light source |
06/17/1998 | CN1185041A Method for mfg. ac electroluminescent film device |
06/16/1998 | US5767581 Gallium nitride-based III-V group compound semiconductor |
06/16/1998 | US5767536 Having electrode which shows small contact resistance and enables an ohmic contact between electrode and a semiconductor layer; layer comprises zinc, magnesium, sulfur, selenium |
06/16/1998 | US5767535 Quantum layer structure |
06/16/1998 | US5767534 Passivation capping layer for ohmic contact in II-VI semiconductor light transducing device |
06/16/1998 | US5767533 High-conductivity semiconductor material having a dopant comprising coulombic pairs of elements |
06/16/1998 | US5766888 Detection of carcinoma metastases by nucleic acid amplification |
06/16/1998 | US5766345 Molecular beam epitaxy |