Patents
Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364)
08/1998
08/11/1998US5793788 Semiconductor light emitting element with p-type non-alloy electrode including a platinum layer and method for fabricating the same
08/11/1998US5793405 LED printhead, LED array chip therefor and method of making LED array chip
08/11/1998US5793163 Driving circuit for light emitting element
08/11/1998US5793062 Transparent substrate light emitting diodes with directed light output
08/11/1998US5793061 Group-III nitride based light emitter
08/11/1998US5793060 SOI Optical semiconductor device
08/11/1998US5793054 Gallium nitride type compound semiconductor light emitting element
08/11/1998US5792698 Method of manufacturing semiconductor light emitting device
08/06/1998WO1998034304A1 Semiconductor laser device
08/06/1998WO1998034285A1 Light emitting element, semiconductor light emitting device, and method for manufacturing them
08/06/1998WO1998034284A1 Optoelectronic semiconductor component
08/06/1998DE19703615A1 Optoelektronisches Halbleiterbauelement Optoelectronic semiconductor component
08/05/1998EP0856600A1 LiGa02 single crystal, single-crystal substrate, and method of manufacturing the same
08/05/1998EP0856411A1 Recording head and image forming apparatus using the same
08/05/1998EP0856202A2 Visible light emitting devices including uv-light emitting diode and uv-excitable, visible light emitting phosphor, and method of producing such devices
08/05/1998CN1189702A Light emitting display element, method for connecting same to electric wiring substrate and method of manufacturing same
08/05/1998CN1189701A Gan related compound semiconductor and process for producing the same
08/04/1998US5789773 Aluminum, gallium, indium phosphide
08/04/1998US5789772 Semi-insulating surface light emitting devices
08/04/1998US5789768 Light emitting diode having transparent conductive oxide formed on the contact layer
08/04/1998US5789273 Method for fabricating compound semiconductor laser
08/04/1998US5789265 Gallium nitride, dry etching
07/1998
07/30/1998WO1998033219A1 p-TYPE SEMICONDUCTOR, METHOD FOR MANUFACTURING THE SAME, SEMICONDUCTOR DEVICE, PHOTOVOLTAIC ELEMENT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
07/30/1998DE19803006A1 Compound semiconductor light emission element especially LED
07/29/1998EP0855751A2 Light emitting diode
07/29/1998CN1189087A Method for mounting optical semiconductor device on supporting substrate and their two formed component
07/28/1998US5787104 Active layer of hexagonal system compound; formed in c-axis direction; anisotropic strain
07/28/1998US5786606 Semiconductor light-emitting device
07/28/1998US5786603 Reducing excessive voltage drop at n-n hetero-interface lengthening service life of device
07/28/1998US5786269 II-VI group compound semiconductor device and method for manufacturing the same
07/28/1998US5785418 Thermally protected LED array
07/28/1998CA2055673C Semiconductor optical devices with np current blocking layers of wide-band gap materials
07/23/1998DE19703072A1 Aluminium arsenide-gallium arsenide epitaxial layer structure
07/22/1998EP0854524A2 Nitride semi-conductor device and method of manufacture
07/22/1998EP0854523A2 Semiconductor light emitting device and its manufacturing method
07/22/1998EP0854520A2 Method for mounting optical semiconductor device on supporting substrate
07/22/1998CN1039194C Improved pulsatile once-a-day-delivery systems for minocycline
07/21/1998US5784513 Fiber-detachable-type optical module
07/21/1998US5784511 Connector with magnet being held to an apparatus for data transmission/reception
07/21/1998US5783856 Method for fabricating self-assembling microstructures
07/21/1998US5783844 Optical semiconductor device
07/21/1998US5783498 Method of forming silicon dioxide film containing germanium nanocrystals
07/21/1998US5783477 Method for bonding compounds semiconductor wafers to create an ohmic interface
07/21/1998US5782996 Sandwitched zinc telluride and zinc selenide layer is graded from zinc selenide to zinc telluride
07/21/1998US5782555 Heat dissipating L.E.D. traffic light
07/20/1998CA2219166A1 Composite unit of optical semiconductor device and supporting substrate and method for mounting optical semiconductor device on supporting substrate
07/16/1998WO1998031055A1 Nitride semiconductor device
07/16/1998DE19742840A1 Overcurrent protection system e.g. for light-emitting diode (LED) for optical communications
07/16/1998CA2529996A1 Nitride semiconductor device
07/15/1998EP0853334A1 Optoelectronic material, device using the same, and method for manufacturing the same
07/15/1998EP0852818A1 Dynamic infrared scene projector
07/15/1998EP0852817A1 Surface light-emitting element and self-scanning type light-emitting device
07/15/1998EP0852816A2 Optoelectronic semiconductor component
07/15/1998EP0852815A1 Encapsulation of an optoelectronic semiconductor component with an optical element and method of producing the same
07/15/1998EP0752165B1 Quantum-layer structure
07/14/1998US5781575 Surface emitting laser device with a vertical cavity
07/14/1998US5780876 Evaporation barrier layer prevents liberation of indium from active layer
07/14/1998US5780873 Semiconductor device capable of easily forming cavity and its manufacturing method
07/14/1998US5780867 Used for chemical sensing, fiber optic gyroscopes, wavelength division multiplexed fiber optic data link for automobiles and aircraft
07/14/1998US5780834 Imaging and illumination optics assembly
07/14/1998US5780355 UV assisted gallium nitride growth
07/14/1998US5780322 Method for growing a II-VI compound semiconductor layer containing cadmium and method for fabricating a semiconductor laser
07/14/1998US5780321 Forming indium-gallium-aluminum-phosphide epilayer
07/14/1998US5780320 Method of manufacturing a semiconductor laser including two sets of dicing grooves
07/14/1998US5779924 Ordered interface texturing for a light emitting device
07/14/1998CA2093959C Quasi-resonant diode drive current source
07/08/1998EP0852416A1 Semiconductor material, method of producing the semiconductor material, and semiconductor device
07/08/1998EP0852402A1 A GaAsP epitaxial wafer and a method for manufacturing it
07/08/1998CN1187044A Preparation of single layer film electroluminescent device
07/07/1998US5777433 High refractive index package material and a light emitting device encapsulated with such material
07/07/1998US5777350 Nitride semiconductor light-emitting device
07/07/1998US5777349 Semiconductor light emitting device
07/07/1998US5776793 Vapor deposition forming p/n junction blue light diode
07/02/1998WO1998021758A3 Electroluminescent device made of organic material
07/02/1998DE19757850A1 Light emitting display element e.g. LED chip
07/02/1998DE19756856A1 Semiconductor light emitting device especially LED
07/01/1998EP0851542A2 Gallium nitride based compound semiconductor laser and method of forming the same
07/01/1998EP0851513A2 Method of producing semiconductor member and method of producing solar cell
07/01/1998EP0850799A2 Indication unit with transparent indicating element
07/01/1998EP0850194A1 Process for preparing a nanocrystalline material
06/1998
06/30/1998US5773850 Semiconductor device having a ZnCdSe buffer layer with a II-VI compound semiconductor layer containing Te grown thereon
06/30/1998US5772759 Process for producing p-type doped layers, in particular, in II-VI semiconductors
06/30/1998US5771562 Passivation of organic devices
06/24/1998EP0849812A2 LED with omnidirectional light outcoupler
06/24/1998EP0849380A2 Method for fabrication of nitride containing III-V semiconductor layers
06/24/1998CN1185663A Semi-conductor luminous device with high luminous efficiency
06/23/1998US5770887 GaN single crystal
06/23/1998US5770473 Packaging of high power semiconductor lasers
06/23/1998US5769521 Light source device and method of producing same
06/18/1998WO1998025749A1 Injection molding encapsulation for an electronic device directly onto a substrate
06/17/1998CN1185234A Electroluminescent device comprising porous silicon
06/17/1998CN1185042A Light-emitting diode white light source
06/17/1998CN1185041A Method for mfg. ac electroluminescent film device
06/16/1998US5767581 Gallium nitride-based III-V group compound semiconductor
06/16/1998US5767536 Having electrode which shows small contact resistance and enables an ohmic contact between electrode and a semiconductor layer; layer comprises zinc, magnesium, sulfur, selenium
06/16/1998US5767535 Quantum layer structure
06/16/1998US5767534 Passivation capping layer for ohmic contact in II-VI semiconductor light transducing device
06/16/1998US5767533 High-conductivity semiconductor material having a dopant comprising coulombic pairs of elements
06/16/1998US5766888 Detection of carcinoma metastases by nucleic acid amplification
06/16/1998US5766345 Molecular beam epitaxy