Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2014
10/28/2014US8871592 Method of manufacturing a semiconductor device including concave portion
10/28/2014US8871589 Methods of forming semiconductor constructions
10/28/2014US8871587 Complementary stress memorization technique layer method
10/28/2014US8871585 Manufacturing method of semiconductor device and semiconductor device
10/28/2014US8871584 Replacement source/drain finFET fabrication
10/28/2014US8871583 Semiconductor device and manufacturing method thereof
10/28/2014US8871582 Methods of forming a semiconductor device with a protected gate cap layer and the resulting device
10/28/2014US8871581 Enhancement mode III-nitride FET
10/28/2014US8871579 Semiconductor transistor manufacturing method, driving circuit utilizing a semiconductor transistor manufactured according to the semiconductor transistor manufacturing method, pixel circuit including the driving circuit and a display element, display panel having the pixel circuits disposed in a matrix, display apparatus provided with the display panel
10/28/2014US8871578 Method for manufacturing thin film transistor
10/28/2014US8871577 Thin film transistor and manufacturing method thereof
10/28/2014US8871576 Silicon nanotube MOSFET
10/28/2014US8871575 Method of fabricating field effect transistor with fin structure
10/28/2014US8871573 Method for forming a semiconductor device
10/28/2014US8871567 Field-effect transistor and method for manufacturing the same
10/28/2014US8871566 Method of manufacturing thin film transistor
10/28/2014US8871565 Method for manufacturing semiconductor device
10/28/2014US8871564 Diffusion barrier layer for resistive random access memory cells
10/28/2014US8871550 Method for processing a wafer at unmasked areas and previously masked areas to reduce a wafer thickness
10/28/2014US8871549 Biological and chemical sensors
10/28/2014US8871548 Gated co-planar poly-silicon thin film diode
10/28/2014US8871537 Method of manufacturing an organic electroluminescence display device
10/28/2014US8871119 Composite oxide sintered body and sputtering target comprising same
10/23/2014US20140315371 Methods of forming isolation regions for bulk finfet semiconductor devices
10/23/2014US20140315366 Semiconductor Device and Method of Making
10/23/2014US20140315365 Method of forming semiconductor device
10/23/2014US20140315364 Methods Of Forming A Vertical Transistor
10/23/2014US20140315363 6T SRAM Architecture For Gate-All-Around Nanowire Devices
10/23/2014US20140315362 CMOS Transistor With Dual High-k Gate Dielectric
10/23/2014US20140315359 Semiconductor device manufacturing method
10/23/2014US20140315358 Manufacturing method of junction field effect transistor
10/23/2014US20140315349 Semiconductor device and method for manufacturing the same
10/23/2014US20140313821 Fin-type device system and method
10/23/2014US20140313816 Select device for cross point memory structures
10/23/2014US20140313443 Display panel, transistor, and the manufacturing method thereof
10/23/2014US20140312879 Method to realize electronic field-effect transistor sensors
10/23/2014US20140312510 Semiconductor Device
10/23/2014US20140312504 Interconnect line selectively isolated from an underlying contact plug
10/23/2014US20140312471 Semiconductor device and manufacturing method thereof
10/23/2014US20140312465 Die Seal Layout for VFTL Dual Damascene in a Semiconductor Device
10/23/2014US20140312463 Semiconductor structures, devices and engineered substrates including layers of semiconductor material having reduced lattice strain
10/23/2014US20140312462 Semiconductor device
10/23/2014US20140312461 Defective p-n junction for backgated fully depleted silicon on insulator mosfet
10/23/2014US20140312456 Semiconductor devices and methods of fabricating the same
10/23/2014US20140312453 Schottky barrier diodes with a guard ring formed by selective epitaxy
10/23/2014US20140312452 Semiconductor device and termination region structure thereof
10/23/2014US20140312434 Finfet device with a graphene gate electrode and methods of forming same
10/23/2014US20140312433 Contact structure employing a self-aligned gate cap
10/23/2014US20140312432 Semiconductor arrangement with substrate isolation
10/23/2014US20140312430 Semiconductor devices and methods of fabricating the same
10/23/2014US20140312429 Power Semiconductor Device with Oscillation Prevention
10/23/2014US20140312428 Epitaxial replacement of a raised source/drain
10/23/2014US20140312425 Finfet with crystalline insulator
10/23/2014US20140312422 Method and Apparatus for use in Improving Linearity of MOSFETs using an Accumulated Charge Sink-Harmonic Wrinkle Reduction
10/23/2014US20140312421 Vapor-Trapping Growth of Single-Crystalline Graphene Flowers
10/23/2014US20140312420 Finfet devices containing merged epitaxial fin-containing contact regions
10/23/2014US20140312419 Finfet devices containing merged epitaxial fin-containing contact regions
10/23/2014US20140312418 Semiconductor device
10/23/2014US20140312417 Semiconductor Device and Method of Manufacturing a Semiconductor Device
10/23/2014US20140312416 Semiconductor device and method of manufacturing semiconductor device
10/23/2014US20140312415 Semiconductor device and manufacturing method therefor
10/23/2014US20140312414 Transistor and method of manufacturing the same
10/23/2014US20140312413 Self aligned embedded gate carbon transistors
10/23/2014US20140312412 Self aligned embedded gate carbon transistors
10/23/2014US20140312411 Semiconductor device having super junction metal oxide semiconductor structure and fabrication method for the same
10/23/2014US20140312410 Nonvolatile memory device and method for fabricating the same
10/23/2014US20140312408 Charge-trap nor with silicon-rich nitride as a charge trap layer
10/23/2014US20140312407 Nonvolatile memory device and fabricating method thereof
10/23/2014US20140312406 Semiconductor device and manufacturing method thereof
10/23/2014US20140312405 Nonvolatile memory device and method for fabricating the same
10/23/2014US20140312403 Memory Cell Floating Gate Replacement
10/23/2014US20140312401 Memory cell having a recessed gate and manufacturing method thereof
10/23/2014US20140312400 Integrated non-volatile memory elements, design and use
10/23/2014US20140312399 Semiconductor device and method of manufacturing the same
10/23/2014US20140312398 Recessing sti to increase fin height in fin-first process
10/23/2014US20140312397 Self-aligned borderless contacts using a photo-patternable dielectric material as a replacement contact
10/23/2014US20140312396 Split multi-gate field-effect transistor
10/23/2014US20140312395 Self-aligned borderless contacts using a photo-patternable dielectric material as a replacement contact
10/23/2014US20140312393 Fin-fet transistor with punchthrough barrier and leakage protection regions
10/23/2014US20140312390 Layout Structure of Heterojunction Bipolar Transistors
10/23/2014US20140312389 Reacted Conductive Gate Electrodes and Methods of Making the Same
10/23/2014US20140312388 Apparatus and Method for Forming Semiconductor Contacts
10/23/2014US20140312387 Semiconductor device and method for fabricating the same
10/23/2014US20140312384 Semiconductor device
10/23/2014US20140312383 Power semiconductor device and method of manufacturing the same
10/23/2014US20140312382 Power device and method of manufacturing the same
10/23/2014US20140312381 Nanoelectronic structure and method of producing such
10/23/2014US20140312362 Compound semiconductor device and method of manufacturing the same
10/23/2014US20140312361 Semiconductor element, semiconductor device and method for manufacturing semiconductor element
10/23/2014US20140312358 Normally-off gallium nitride-based semiconductor devices
10/23/2014US20140312357 Semiconductor device
10/23/2014US20140312356 Semiconductor Device
10/23/2014US20140312355 Method of fabricating a merged p-n junction and schottky diode with regrown gallium nitride layer
10/23/2014US20140312352 Semiconductor device, electro-optical device, method of manufacturing semiconductor device, method of manufacturing electro-optical device, and electronic apparatus
10/23/2014US20140312349 Thin film transistor and manufacturing method thereof and array substrate including the thin film transistor
10/23/2014US20140312344 Thin film transistor array substrate and method of manufacturing the same
10/23/2014US20140312343 Semiconductor device and method for manufacturing the same
10/23/2014US20140312342 Display device
10/23/2014US20140312341 Transistor, the Preparation Method Therefore, and Display Panel
10/23/2014US20140312320 Method of manufacturing thin-film transistor, method of manufacturing organic light-emitting display device including the same, and thin-film transistor and organic light-emitting display device manufactured using the methods
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