Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2014
10/21/2014US8866124 Diodes with native oxide regions for use in memory arrays and methods of forming the same
10/21/2014US8866123 Non-volatile memory device and production method thereof
10/21/2014US8866121 Current-limiting layer and a current-reducing layer in a memory device
10/21/2014US8866119 Memory device and method for manufacturing same
10/21/2014US8866118 Morphology control of ultra-thin MeOx layer
10/21/2014US8866117 Semiconductor storage device including a diode and a variable resistance element
10/21/2014US8866116 Semiconductor memory devices having predetermined conductive metal levels and methods of fabricating the same
10/21/2014US8866065 Nanowire arrays comprising fluorescent nanowires
10/21/2014US8865601 Methods for preparing a semiconductor wafer with high thermal conductivity
10/21/2014US8865599 Self-leveling planarization materials for microelectronic topography
10/21/2014US8865596 Methods for forming semiconductor structures using selectively-formed sidewall spacers
10/21/2014US8865593 Metal silicide layer, NMOS transistor, and fabrication method
10/21/2014US8865592 Silicided semiconductor structure and method of forming the same
10/21/2014US8865591 N-type contact electrode formed on an N-type semiconductor layer and method of forming same using a second metal electrode layer heat-treated after being formed on a first, heat-treated metal electrode layer
10/21/2014US8865582 Method for producing a floating gate memory structure
10/21/2014US8865579 Nonvolatile memory device and method of manufacturing the same
10/21/2014US8865576 Producing vertical transistor having reduced parasitic capacitance
10/21/2014US8865575 Fabrication of III-nitride semiconductor device and related structures
10/21/2014US8865572 Dislocation engineering using a scanned laser
10/21/2014US8865571 Dislocation engineering using a scanned laser
10/21/2014US8865570 Chips with high fracture toughness through a metal ring
10/21/2014US8865567 Method of manufacturing semiconductor device
10/21/2014US8865556 Using fast anneal to form uniform Ni(Pt)Si(Ge) contacts on SiGe layer
10/21/2014US8865555 Semiconductor device and manufacturing method thereof
10/21/2014US8865554 Method for fabricating nonvolatile memory device
10/21/2014US8865552 Fin field effect transistor and fabrication method
10/21/2014US8865551 Reducing the inversion oxide thickness of a high-k stack fabricated on high mobility semiconductor material
10/21/2014US8865550 Memory device having buried bit line and vertical transistor and fabrication method thereof
10/21/2014US8865549 Recessed channel insulated-gate field effect transistor with self-aligned gate and increased channel length
10/21/2014US8865548 Method of making a non-volatile double gate memory cell
10/21/2014US8865546 Method for manufacturing a non-volatile semiconductor memory device having contact plug formed on silicided source/drain region
10/21/2014US8865545 Semiconductor device and method for fabricating the same
10/21/2014US8865543 Ge-based NMOS device and method for fabricating the same
10/21/2014US8865542 Embedded polysilicon resistor in integrated circuits formed by a replacement gate process
10/21/2014US8865540 Method for forming a schottky barrier diode integrated with a trench MOSFET
10/21/2014US8865539 Fully depleted SOI multiple threshold voltage application
10/21/2014US8865535 Fabricating 3D non-volatile storage with transistor decoding structure
10/21/2014US8865534 Method for manufacturing semiconductor device
10/21/2014US8865531 Multi-direction wiring for replacement gate lines
10/21/2014US8865530 Extremely thin semiconductor on insulator (ETSOI) logic and memory hybrid chip
10/21/2014US8865529 Thin-film transistor device manufacturing method, thin-film transistor device, and display device
10/21/2014US8865522 Method for manufacturing semiconductor devices having a glass substrate
10/21/2014US8865517 Method for manufacturing thin-film transistor active device and thin-film transistor active device manufactured with same
10/21/2014US8865516 Oxide semiconductor, thin film transistor array substrate and production method thereof, and display device
10/21/2014US8865497 Planar cavity MEMS and related structures, methods of manufacture and design structures
10/21/2014US8865482 Method of detecting the circular uniformity of the semiconductor circular contact holes
10/21/2014US8865481 MRAM device and integration techniques compatible with logic integration
10/21/2014US8865288 Micro-needle arrays having non-planar tips and methods of manufacture thereof
10/21/2014US8865268 Method and apparatus
10/21/2014US8865025 Doped conjugated polymers, devices, and methods of making devices
10/16/2014US20140308808 Replacement Gate Integration Scheme Employing Multiple Types of Disposable Gate Structures
10/16/2014US20140308804 Method for forming crystalline thin-film and method for manufacturing thin film transistor
10/16/2014US20140308799 Trench isolation mos p-n junction diode device and method for manufacturing the same
10/16/2014US20140308798 Multiple-Time Programming Memory Cells and Methods for Forming the Same
10/16/2014US20140308793 Varactor Diode, Electrical Device and Method for Manufacturing Same
10/16/2014US20140308792 Methods of producing bipolar transistors having emitter-base junctions of varying depths and/or doping concentrations
10/16/2014US20140308791 Manufacturing method of non-volatile memory
10/16/2014US20140308790 Methods for manufacturing devices with source/drain structures
10/16/2014US20140308789 Semiconductor memory device and method of manufacturing the same
10/16/2014US20140308788 Method for fabricating power semiconductor device
10/16/2014US20140308787 Monolithically integrated active snubber
10/16/2014US20140308785 Precision resistor for non-planar semiconductor device architecture
10/16/2014US20140308784 Three-dimensional high voltage gate driver integrated circuit
10/16/2014US20140308782 Self-limiting selective epitaxy process for preventing merger of semiconductor fins
10/16/2014US20140308770 Chemical sensor
10/16/2014US20140307997 Hybrid integration of group iii-v semiconductor devices on silicon
10/16/2014US20140307511 Non-volatile Memory Cell With Self Aligned Floating And Erase Gates, And Method Of Making Same
10/16/2014US20140307194 Thin film transistor and display device using the same
10/16/2014US20140306325 Compensation for a charge in a silicon substrate
10/16/2014US20140306323 Semiconductor Constructions
10/16/2014US20140306320 Methods of fabricating semiconductor structures or devices using layers of semiconductor material having selected or controlled lattice parameters
10/16/2014US20140306319 Semiconductor device and manufacturing method thereof
10/16/2014US20140306318 Trench formation method and a semiconductor structure thereof
10/16/2014US20140306317 Finfet fin height control
10/16/2014US20140306315 Enhanced electron mobility at the interface between gd2o3(100)/n-si(100)
10/16/2014US20140306298 Semiconductor Device with Compensation Regions
10/16/2014US20140306297 Recessing sti to increase fin height in fin-first process
10/16/2014US20140306296 Semiconductor device and method for fabricating the same
10/16/2014US20140306295 Semiconductor device and method for fabricating the same
10/16/2014US20140306294 Gap Fill Self Planarization on Post EPI
10/16/2014US20140306293 Semiconductor memory device including guard band
10/16/2014US20140306291 Dual Silicide Process Compatible with Replacement-Metal-Gate
10/16/2014US20140306289 SELF-ALIGNED STRUCTURE FOR BULK FinFET
10/16/2014US20140306288 Semiconductor device and manufacturing method thereof
10/16/2014US20140306286 Tapered fin field effect transistor
10/16/2014US20140306285 Semiconductor power device
10/16/2014US20140306284 Semiconductor Device and Method for Producing the Same
10/16/2014US20140306283 Superjunction semiconductor device and manufacturing method therefor
10/16/2014US20140306282 Multi level programmable memory structure
10/16/2014US20140306281 Nonvolatile semiconductor storage device and method for manufacturing the same
10/16/2014US20140306280 Semiconductor devices and methods of manufacturing the same
10/16/2014US20140306278 Semiconductor device with buried bit line and method for fabricating the same
10/16/2014US20140306275 Semiconductor device and method of manufacturing semiconductor device
10/16/2014US20140306274 SELF-ALIGNED STRUCTURE FOR BULK FinFET
10/16/2014US20140306273 Structure of metal gate structure and manufacturing method of the same
10/16/2014US20140306272 Method of forming a finfet structure
10/16/2014US20140306271 Unltra-Shallow Junction Semiconductor Field-Effect Transistor and Method of Making
10/16/2014US20140306270 Multi-source jfet device
10/16/2014US20140306269 Vertical pmos field effect transistor and manufacturing method thereof
10/16/2014US20140306268 Method for obtaining a heterogeneous substrate for the production of semiconductors, and corresponding substrate
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