Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2014
10/28/2014US8872276 Electronic device including a transistor and a vertical conductive structure
10/28/2014US8872274 Structure for self-aligned silicide contacts to an upside-down FET by epitaxial source and drain
10/28/2014US8872270 Memory devices
10/28/2014US8872267 Semiconductor device
10/28/2014US8872266 Trench power MOSFET structure and fabrication method thereof
10/28/2014US8872265 Trench power MOSFET and fabrication method thereof
10/28/2014US8872264 Semiconductor device having a floating semiconductor zone
10/28/2014US8872263 Semiconductor device and method of manufacturing semiconductor device
10/28/2014US8872262 Semiconductor integrated circuit devices including gates having connection lines thereon
10/28/2014US8872261 Semiconductor device and manufacturing method of the same
10/28/2014US8872260 Semiconductor device formation
10/28/2014US8872259 Semiconductor device and method for fabricating the same
10/28/2014US8872258 Semiconductor memory device
10/28/2014US8872257 Semiconductor device
10/28/2014US8872255 Semiconductor devices with non-volatile memory cells
10/28/2014US8872254 Semiconductor device and method of manufacturing the same
10/28/2014US8872253 Semiconductor memory devices
10/28/2014US8872252 Multi-tiered semiconductor apparatuses including residual silicide in semiconductor tier
10/28/2014US8872251 Nonvolatile semiconductor memory device and manufacturing method thereof
10/28/2014US8872250 Semiconductor device and capacitor
10/28/2014US8872248 Capacitors comprising slot contact plugs
10/28/2014US8872245 Semiconductor device
10/28/2014US8872244 Contact structure employing a self-aligned gate cap
10/28/2014US8872243 Semiconductor device and related manufacturing method
10/28/2014US8872242 Silicon carbide semiconductor device and method for manufacturing the same
10/28/2014US8872241 Multi-direction wiring for replacement gate lines
10/28/2014US8872240 Active multi-gate micro-electro-mechanical device with built-in transistor
10/28/2014US8872239 Image pickup device
10/28/2014US8872238 Method for manufacturing a low defect interface between a dielectric and a III-V compound
10/28/2014US8872237 Heterojunction bipolar transistor manufacturing method and integrated circuit comprising a heterojunction bipolar transistor
10/28/2014US8872236 Scaling of bipolar transistors
10/28/2014US8872235 Integrated Schottky diode for HEMTs
10/28/2014US8872234 Semiconductor device and method of manufacturing the semiconductor device
10/28/2014US8872233 Semiconductor structure
10/28/2014US8872232 Compound semiconductor device and method for manufacturing the same
10/28/2014US8872231 Semiconductor wafer, method of producing semiconductor wafer, and electronic device
10/28/2014US8872230 Tunnel field-effect transistor and methods for manufacturing thereof
10/28/2014US8872228 Strained-channel semiconductor device fabrication
10/28/2014US8872227 Nitride semiconductor device
10/28/2014US8872226 Group III nitride epitaxial substrate for semiconductor device, semiconductor device, and process for producing group III nitride epitaxial substrate for semiconductor device
10/28/2014US8872225 Defect transferred and lattice mismatched epitaxial film
10/28/2014US8872224 Solution Processed Neutron Detector
10/28/2014US8872223 Programmable SCR for ESD protection
10/28/2014US8872222 Semiconductor structure and method for forming the same
10/28/2014US8872221 Vertical thin film transistor and fabricating method thereof
10/28/2014US8872220 Integrated circuits with aligned (100) NMOS and (110) PMOS FinFET sidewall channels
10/28/2014US8872201 Organic light emitting diode display
10/28/2014US8872197 Organic light emitting diode display and method of manufacturing the same
10/28/2014US8872193 Silicon carbide semiconductor device and method for producing the same
10/28/2014US8872191 Electronic circuit device
10/28/2014US8872189 Substrate, semiconductor device, and method of manufacturing the same
10/28/2014US8872188 Silicon carbide semiconductor device and method of manufacturing thereof
10/28/2014US8872187 Membrane having means for state monitoring
10/28/2014US8872186 Display device and method for manufacturing same
10/28/2014US8872184 Array structure and fabricating method thereof
10/28/2014US8872183 Three-dimensional semiconductor devices
10/28/2014US8872180 Liquid crystal display device and method for manufacturing liquid crystal display device
10/28/2014US8872179 Semiconductor device
10/28/2014US8872177 Electric charge flow circuit for a time measurement
10/28/2014US8872176 Elastic encapsulated carbon nanotube based electrical contacts
10/28/2014US8872175 Semiconductor device and method for manufacturing the same
10/28/2014US8872174 Light-emitting device
10/28/2014US8872173 Thin film transistor structure and array substrate using the same
10/28/2014US8872172 Embedded source/drains with epitaxial oxide underlayer
10/28/2014US8872171 Semiconductor device and method for manufacturing the same
10/28/2014US8872169 Light emitting element and light emitting device using the same
10/28/2014US8872168 Flexible organic light emitting display and method in an in-cell structure having a touch electrode array for manufacturing the same
10/28/2014US8872167 Organic light-emitting device
10/28/2014US8872165 Thin film transistor array substrate, organic light emitting display device comprising the same, and method of manufacturing the same
10/28/2014US8872162 Field-effect transistor and method for manufacturing the same
10/28/2014US8872161 Integrate circuit with nanowires
10/28/2014US8872160 Increasing carrier injection velocity for integrated circuit devices
10/28/2014US8872159 Graphene on semiconductor detector
10/28/2014US8872158 Semiconductor light emitting device
10/28/2014US8872156 Group III nitride semiconductor light emitting device and method of fabricating group III nitride semiconductor light emitting device
10/28/2014US8872155 Nanostructured thin film, surface light source and display apparatus employing nanostructured thin film
10/28/2014US8872154 Field effect transistor fabrication from carbon nanotubes
10/28/2014US8872151 Surface treatment to improve resistive-switching characteristics
10/28/2014US8872150 Memory constructions
10/28/2014US8872149 RRAM structure and process using composite spacer
10/28/2014US8872147 Method for manufacturing nonvolatile semiconductor storage device and nonvolatile semiconductor storage device
10/28/2014US8871647 Group III nitride substrate, semiconductor device comprising the same, and method for producing surface-treated group III nitride substrate
10/28/2014US8871643 Lateral semiconductor device and manufacturing method for the same
10/28/2014US8871642 Method of forming pattern and developer for use in the method
10/28/2014US8871638 Semiconductor device and method for fabricating the same
10/28/2014US8871630 Manufacturing electronic device having contact elements with a specified cross section
10/28/2014US8871628 Electrode structure, device comprising the same and method for forming electrode structure
10/28/2014US8871625 Spacer structure of a field effect transistor with an oxygen-containing layer between two oxygen-sealing layers
10/28/2014US8871624 Sealed air gap for semiconductor chip
10/28/2014US8871623 Methods and devices for forming nanostructure monolayers and devices including such monolayers
10/28/2014US8871622 Semiconductor device and manufacturing method thereof
10/28/2014US8871617 Deposition and reduction of mixed metal oxide thin films
10/28/2014US8871616 Methods of fabricating thin film transistor and organic light emitting diode display device having the same
10/28/2014US8871603 Semiconductor device and method for low resistive thin film resistor interconnect
10/28/2014US8871600 Schottky barrier diodes with a guard ring formed by selective epitaxy
10/28/2014US8871599 Method of manufacturing IC comprising a bipolar transistor and IC
10/28/2014US8871598 Non-volatile memory (NVM) and high-k and metal gate integration using gate-first methodology
10/28/2014US8871597 High gate density devices and methods
10/28/2014US8871594 Process for manufacturing power integrated devices having surface corrugations, and power integrated device having surface corrugations
10/28/2014US8871593 Semiconductor device with buried gate electrode and gate contacts
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