Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2014
11/04/2014US8878184 Display device and method for manufacturing the same
11/04/2014US8878181 Oxide thin film transistor and method of fabricating the same
11/04/2014US8878180 Semiconductor device and method for manufacturing the same
11/04/2014US8878178 Method for manufacturing semiconductor device
11/04/2014US8878177 Semiconductor device and method for manufacturing semiconductor device
11/04/2014US8878176 Metal-oxide based thin-film transistors with fluorinated active layer
11/04/2014US8878175 Semiconductor device and manufacturing method thereof
11/04/2014US8878174 Semiconductor element, memory circuit, integrated circuit, and driving method of the integrated circuit
11/04/2014US8878173 Semiconductor device including oxide semiconductor and metal oxide
11/04/2014US8878172 Oxide semiconductor, thin film transistor, and display device
11/04/2014US8878169 Photocurable polymeric materials and related electronic devices
11/04/2014US8878166 Organic light-emitting display panel and display apparatus having the same
11/04/2014US8878165 Electrode treatment process for organic electronic devices
11/04/2014US8878164 Organic light-emitting diode having optical resonator
11/04/2014US8878163 Light-emitting device and 9.9 biphenyl fluorene materials therefor
11/04/2014US8878162 Method of depositing organic layers onto a substrate
11/04/2014US8878161 Tunnel diodes incorporating strain-balanced, quantum-confined heterostructures
11/04/2014US8878160 III-V light emitting device with thin n-type region
11/04/2014US8878159 Light-emitting element and light-emitting device
11/04/2014US8878158 Light emitting device, light emitting device package, and lighting system
11/04/2014US8878157 Semiconductor-graphene hybrids formed using solution growth
11/04/2014US8878156 Memory device having stitched arrays of 4 F2 memory cells
11/04/2014US8878154 Semiconductor device with multiple space-charge control electrodes
11/04/2014US8878153 Variable resistance element having gradient of diffusion coefficient of ion conducting layer
11/04/2014US8878152 Nonvolatile resistive memory element with an integrated oxygen isolation structure
11/04/2014US8877657 Process for producing semiconductive layers
11/04/2014US8877655 Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
11/04/2014US8877651 Semiconductor device and manufacturing method involving multilayer contact etch stop
11/04/2014US8877645 Integrated circuit structure having selectively formed metal cap
11/04/2014US8877642 Double-pattern gate formation processing with critical dimension control
11/04/2014US8877635 Method for fabricating MOS transistor
11/04/2014US8877627 Method of forming PN floating gate non-volatile storage elements and transistor having N+ gate
11/04/2014US8877626 Nonvolatile memory device, method of manufacturing the nonvolatile memory device, and memory module and system including the nonvolatile memory device
11/04/2014US8877625 Methods of forming semiconductor devices with different insulation thickness on the same semiconductor substrate and the resulting devices
11/04/2014US8877624 Semiconductor structures
11/04/2014US8877621 Low resistivity gate conductor
11/04/2014US8877620 Method for forming ultra-shallow doping regions by solid phase diffusion
11/04/2014US8877618 Method for producing a field effect transistor with a SiGe channel by ion implantation
11/04/2014US8877615 Methods of manufacturing finFET devices
11/04/2014US8877614 Spacer for semiconductor structure contact
11/04/2014US8877610 Method of patterning a substrate
11/04/2014US8877604 Device structure with increased contact area and reduced gate capacitance
11/04/2014US8877598 Method of lithography process with an under isolation material layer
11/04/2014US8877597 Embedding metal silicide contact regions reliably into highly doped drain and source regions by a stop implantation
11/04/2014US8877596 Semiconductor devices with asymmetric halo implantation and method of manufacture
11/04/2014US8877595 Transistor structure with silicided source and drain extensions and process for fabrication
11/04/2014US8877594 CMOS device for reducing radiation-induced charge collection and method for fabricating the same
11/04/2014US8877593 Semiconductor device including an asymmetric feature, and method of making the same
11/04/2014US8877592 Epitaxial growth of doped film for source and drain regions
11/04/2014US8877591 Methods of manufacturing vertical structure nonvolatile memory devices
11/04/2014US8877590 Semiconductor memory device and method of manufacturing the same
11/04/2014US8877589 Methods of forming field effect transistors on substrates
11/04/2014US8877588 Methods of forming a three-dimensional semiconductor device with a dual stress channel and the resulting device
11/04/2014US8877587 Nonvolatile memory device and method for fabricating the same
11/04/2014US8877582 Methods of inducing a desired stress in the channel region of a transistor by performing ion implantation/anneal processes on the gate electrode
11/04/2014US8877581 Strain-engineered MOSFETs having rimmed source-drain recesses
11/04/2014US8877580 Reduction of oxide recesses for gate height control
11/04/2014US8877578 Method for producing semiconductor device and semiconductor device
11/04/2014US8877577 Semiconductor device and manufacturing method thereof
11/04/2014US8877576 Integrated circuit including a first channel and a second channel
11/04/2014US8877574 Elemental semiconductor material contact for high electron mobility transistor
11/04/2014US8877573 Thin film transistor substrate and method for manufacturing the same
11/04/2014US8877572 Graphene device manufacturing apparatus and graphene device manufacturing method using the apparatus
11/04/2014US8877569 Method of manufacturing thin film transistor with oxide semiconductor using sputtering method
11/04/2014US8877538 Pressure sensor having nanostructure and manufacturing method thereof
11/04/2014US8877535 Method for forming vertical type sensor
11/04/2014US8877533 Method of manufacturing oxide thin film transistor and display device
11/04/2014US8877521 Semiconductor ferroelectric device, manufacturing method for the same, and electronic device
11/04/2014US8877367 High energy storage capacitor by embedding tunneling nano-structures
11/04/2014US8877082 Method of processing surface of high-performance materials which are difficult to process
11/04/2014US8877021 Chromic oxide powder for sputtering target, and sputtering target manufactured from such chromic oxide powder
10/2014
10/30/2014US20140323895 2deg-based sensor and device for ecg sensing
10/30/2014US20140322913 Polishing composition
10/30/2014US20140322883 Method for fabricating metal-oxide semiconductor transistor
10/30/2014US20140322882 Methods of forming field effect transistors, including forming source and drain regions in recesses of semiconductor fins
10/30/2014US20140322881 Semiconductor devices and methods of manufacturing the same
10/30/2014US20140322880 Metal oxide semiconductor having epitaxial source drain regions and a method of manufacturing same using dummy gate process
10/30/2014US20140322879 Method of forming sigma-shaped trench
10/30/2014US20140322878 Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same
10/30/2014US20140322877 Semiconductor device and method for manufacturing the same
10/30/2014US20140322874 Nonvolatile semiconductor device and method of manufacturing the same
10/30/2014US20140322873 High performance stress-enhanced mosfets using si:c and sige epitaxial source/drain and method of manufacture
10/30/2014US20140322872 Method for making semiconductor device with gate profile control
10/30/2014US20140322871 Partial soi on power device for breakdown voltage improvement
10/30/2014US20140322546 Thermally oxidized heterogeneous composite substrate and method for manufacturing same
10/30/2014US20140320545 Pixel circuit of organic light-emitting display
10/30/2014US20140320198 Protective device for a voltage-controlled semiconductor switch
10/30/2014US20140320193 Semiconductor device
10/30/2014US20140320174 Integrated circuits with laterally diffused metal oxide semiconductor structures
10/30/2014US20140319974 Electrical Component and Method for Producing an Electrical Component
10/30/2014US20140319690 Semiconductor device and method of fabricating the same
10/30/2014US20140319676 Electronic component manufacturing method and electrode structure
10/30/2014US20140319658 Charge pump capacitor assembly with silicon etching
10/30/2014US20140319655 Method for coupling a graphene layer and a substrate and device comprising the graphene/substrate structure obtained
10/30/2014US20140319646 Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same
10/30/2014US20140319645 Semiconductor device and method for manufacturing the same
10/30/2014US20140319644 Semiconductor diode and method of manufacture
10/30/2014US20140319628 Physical quantity detection device and physical quantity detector
10/30/2014US20140319626 Metal Gate Stack Having TiAlCN as Work Function Layer and/or Blocking/Wetting Layer
10/30/2014US20140319625 Transistors and fabrication method thereof
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