Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2014
10/30/2014US20140319624 Methods of forming a finfet semiconductor device by performing an epitaxial growth process
10/30/2014US20140319623 Methods of integrating multiple gate dielectric transistors on a tri-gate (finfet) process
10/30/2014US20140319622 Semiconductor device and methods for forming the same
10/30/2014US20140319619 Method of forming a single metal that performs n and p work functions in high-k/metal gate devices
10/30/2014US20140319618 Semiconductor device and a manufacturing method thereof
10/30/2014US20140319617 Methods of forming metal silicide regions on a semiconductor device
10/30/2014US20140319616 Method for producing a metal-gate mos transistor, in particular a pmos transistor, and corresponding integrated circuit
10/30/2014US20140319615 Finfet with active region shaped structures and channel separation
10/30/2014US20140319614 Finfet channel stress using tungsten contacts in raised epitaxial source and drain
10/30/2014US20140319612 Semiconductor-on-insulator structure and process for producing same
10/30/2014US20140319611 Uniform finfet gate height
10/30/2014US20140319610 Lateral Power Semiconductor Device and Method for Manufacturing a Lateral Power Semiconductor Device
10/30/2014US20140319609 Finfet drive strength modification
10/30/2014US20140319607 Mos with recessed lightly-doped drain
10/30/2014US20140319606 Shielded gate trench (sgt) mosfet devices and manufacturing processes
10/30/2014US20140319605 Nano mosfet with trench bottom oxide shielded and third dimensional p-body contact
10/30/2014US20140319604 High voltage field balance metal oxide field effect transistor (fbm)
10/30/2014US20140319603 Semiconductor device
10/30/2014US20140319602 Power Transistor with At Least Partially Integrated Driver Stage
10/30/2014US20140319601 Bottom source substrateless power mosfet
10/30/2014US20140319600 TSV Structure With A Built-In U-Shaped FET Transistor For Improved Characterization
10/30/2014US20140319599 Semiconductor device
10/30/2014US20140319598 Optimized configurations to integrate steering diodes in low capacitance transient voltage suppressor (TVS)
10/30/2014US20140319596 Selective gate oxide properties adjustment using fluorine
10/30/2014US20140319594 Nonvolatile semiconductor storage device and method of manufacturing the same
10/30/2014US20140319593 Scalable split gate memory cell array
10/30/2014US20140319587 Through-Substrate Vias and Methods for Forming the Same
10/30/2014US20140319586 Photolithographic, thickness non-uniformity, compensation features for optical photolithographic semiconductor structure formation
10/30/2014US20140319584 Group III Nitride High Electron Mobility Transistor (HEMT) Device
10/30/2014US20140319583 High Electron Mobility Transistor and Method of Forming the Same
10/30/2014US20140319582 Field-effect transistor
10/30/2014US20140319581 High Performance Strained Source-Drain Structure and Method of Fabricating the Same
10/30/2014US20140319578 Insulated Gate Bipolar Transistor
10/30/2014US20140319577 Semiconductor device
10/30/2014US20140319576 Semiconductor device
10/30/2014US20140319544 Apparatus and method for fabricating epi wafer and epi wafer
10/30/2014US20140319543 Fin field-effect transistors
10/30/2014US20140319542 Molybdenum trioxide-coated hydrogen-terminated diamond surface and uses thereof
10/30/2014US20140319541 Voidlessly encapsulated semiconductor die package
10/30/2014US20140319539 Semiconductor wafer manufacturing method, and semiconductor wafer
10/30/2014US20140319538 Force detection device, and force transducer device
10/30/2014US20140319535 Nitride semiconductor substrate
10/30/2014US20140319533 Flexible semiconductor devices based on flexible freestanding epitaxial elements
10/30/2014US20140319532 Heterojunction Semiconductor Device and Manufacturing Method
10/30/2014US20140319529 Anti-diffusion layer, preparation method thereof, thin-film transistor (tft), array substrate, display device
10/30/2014US20140319520 Semiconductor device and method for manufacturing the same
10/30/2014US20140319519 Semiconductor device
10/30/2014US20140319517 Semiconductor device and manufacturing method thereof
10/30/2014US20140319516 Semiconductor device
10/30/2014US20140319515 Thin film transistor substrate and manufacturing method thereof
10/30/2014US20140319514 Semiconductor device and method for manufacturing the same
10/30/2014US20140319513 Semiconductor device and method of manufacturing semiconductor device
10/30/2014US20140319512 Thin-film transistor structure, as well as thin-film transistor and display device each having said structure
10/30/2014US20140319498 Thin film transistor substrate and organic light emitting device using the same
10/30/2014US20140319495 Novel organic compound, organic light-emitting device, and image display system
10/30/2014US20140319469 Thin film transistor and organic light emitting diode display
10/30/2014US20140319468 Display having a backplane with interlaced laser crystallized regions
10/30/2014US20140319467 Field-effect transistor with two-dimensional channel realized with lateral heterostructures based on hybridized graphene
10/30/2014US20140319462 Buffer layer omega gate
10/30/2014US20140319459 Methods for fabricating self-aligning semiconductor hetereostructures using nanowires
10/30/2014US20140319452 Single transistor random access memory using ion storage in two-dimensional crystals
10/30/2014US20140319385 Graphene-based nanodevices for terahertz electronics
10/28/2014US8873341 CMUT cell formed from a membrane of nanotubes or nanowires or nanorods and device for ultra high frequency acoustic imaging including multiple cells of this kind
10/28/2014US8873302 Common doped region with separate gate control for a logic compatible non-volatile memory cell
10/28/2014US8873294 Nonvolatile memory devices, erasing methods thereof and memory systems including the same
10/28/2014US8873291 Non-volatile memory device with single-polysilicon-layer memory cells
10/28/2014US8873283 Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same
10/28/2014US8873268 Circuit and system of using junction diode as program selector for one-time programmable devices
10/28/2014US8873266 Nonvolatile semiconductor memory device and method for manufacturing the same
10/28/2014US8873011 Liquid crystal display device and method of manufacturing the same
10/28/2014US8872547 Nanomagnetic logic gate and an electronic device
10/28/2014US8872360 Multiple-qubit wave-activated controlled gate
10/28/2014US8872358 Sealant laminated composite, sealed semiconductor devices mounting substrate, sealed semiconductor devices forming wafer, semiconductor apparatus, and method for manufacturing semiconductor apparatus
10/28/2014US8872353 Semiconductor device having groove-shaped via-hole
10/28/2014US8872352 Semiconductor device having groove-shaped via-hole
10/28/2014US8872351 Semiconductor devices having through electrodes
10/28/2014US8872347 Semiconductor device having groove-shaped via-hole
10/28/2014US8872344 Conductive via structures for routing porosity and low via resistance, and processes of making
10/28/2014US8872341 Semiconductor structure having metal oxide or nirtride passivation layer on fill layer and method for making same
10/28/2014US8872318 Through interposer wire bond using low CTE interposer with coarse slot apertures
10/28/2014US8872317 Stacked package
10/28/2014US8872312 EMI package and method for making same
10/28/2014US8872311 Semiconductor device and a method of manufacture therefor
10/28/2014US8872310 Semiconductor device structures and electronic devices including hybrid conductive vias, and methods of fabrication
10/28/2014US8872309 Composite of III-nitride crystal on laterally stacked substrates
10/28/2014US8872308 AlN cap grown on GaN/REO/silicon substrate structure
10/28/2014US8872307 P-type silicon single crystal and method of manufacturing the same
10/28/2014US8872305 Integrated circuit structure having air-gap trench isolation and related design structure
10/28/2014US8872291 Ferromagnetic tunnel junction structure and magnetoresistive effect device and spintronics device utilizing same
10/28/2014US8872289 Micro-electro-mechanical system (MEMS) structures and design structures
10/28/2014US8872288 Apparatus comprising and a method for manufacturing an embedded MEMS device
10/28/2014US8872287 Integrated structure for MEMS device and semiconductor device and method of fabricating the same
10/28/2014US8872286 Metal gate structure and fabrication method thereof
10/28/2014US8872285 Metal gate structure for semiconductor devices
10/28/2014US8872284 FinFET with metal gate stressor
10/28/2014US8872282 Semiconductor device
10/28/2014US8872281 Silicided trench contact to buried conductive layer
10/28/2014US8872280 Non-planar FET and manufacturing method thereof
10/28/2014US8872279 Transistor structure having an electrical contact structure with multiple metal interconnect levels staggering one another
10/28/2014US8872278 Integrated gate runner and field implant termination for trench devices
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