Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2013
11/12/2013US8581335 Compound semiconductor device and manufacturing method thereof
11/12/2013US8581334 Via structures and semiconductor devices having the via structures
11/12/2013US8581333 Semiconductor device and method for manufacturing the same
11/12/2013US8581332 Semiconductor device and manufacturing method thereof
11/12/2013US8581331 Nonvolatile semiconductor memory device
11/12/2013US8581330 Semiconductor memory device and method for manufacturing the same
11/12/2013US8581329 Semiconductor device and method for manufacturing same
11/12/2013US8581328 Semiconductor memory device
11/12/2013US8581327 Memory and manufacturing method thereof
11/12/2013US8581326 Nonvolatile semiconductor memory device and manufacturing method thereof
11/12/2013US8581325 Semiconductor memory device and manufacturing method thereof
11/12/2013US8581324 Area-efficient electrically erasable programmable memory cell
11/12/2013US8581323 Nonvolatile semiconductor memory device and method of manufacturing same
11/12/2013US8581322 Nonvolatile memory device and method for making the same
11/12/2013US8581321 Nonvolatile memory device and method of forming the same
11/12/2013US8581319 Semiconductor stacks including catalytic layers
11/12/2013US8581318 Enhanced non-noble electrode layers for DRAM capacitor cell
11/12/2013US8581314 Semiconductor devices having spacers disposed on an inner sidewall of a contact hole formed in a layer of the semiconductor devices, and a contact plug disposed therein
11/12/2013US8581310 Z2FET field-effect transistor with a vertical subthreshold slope and with no impact ionization
11/12/2013US8581308 High temperature embedded charge devices and methods thereof
11/12/2013US8581306 Coupled electron shuttle providing electrical rectification
11/12/2013US8581301 Nitride semiconductor device
11/12/2013US8581300 Compound semiconductor device and method of manufacturing the same
11/12/2013US8581299 Semiconductor device
11/12/2013US8581298 Semiconductor device
11/12/2013US8581293 Semiconductor light emitting device
11/12/2013US8581274 Integrated semiconductor light-emitting device and its manufacturing method
11/12/2013US8581270 Organic light-emitting display apparatus
11/12/2013US8581267 Series connected segmented LED
11/12/2013US8581265 Light-emitting device and electronic device including substrate having flexibility
11/12/2013US8581264 Semiconductor body and method of producing a semiconductor body
11/12/2013US8581263 Laser-induced flaw formation in nitride semiconductors
11/12/2013US8581261 Compound semiconductor device and method of manufacturing the same
11/12/2013US8581260 Semiconductor device including a memory
11/12/2013US8581259 Displaying device with photocurrent-reducing structure and method of manufacturing the same
11/12/2013US8581257 Circuit board and display device
11/12/2013US8581256 Pixel structure and fabrication method of pixel structure
11/12/2013US8581255 Pixel structure having storage capacitance of the capacitor
11/12/2013US8581254 Photodetector having improved quantum efficiency
11/12/2013US8581253 Display substrate and method of manufacturing the same
11/12/2013US8581252 Active device array substrate, color filter substrate and manufacturing methods thereof
11/12/2013US8581249 Film thickness monitoring structure for semiconductor substrate
11/12/2013US8581248 Thin film transistor (TFT) having copper electrodes
11/12/2013US8581247 Flexible semiconductor device having gate electrode disposed within an opening of a resin film
11/12/2013US8581246 Protective barriers for electronic devices
11/12/2013US8581245 Thin film transistor, method of manufacturing thin film transistor, display unit, and electronic device
11/12/2013US8581244 Oxide thin film transistors and methods of manufacturing the same
11/12/2013US8581243 Thin-film transistor and process for its fabrication
11/12/2013US8581242 Apparatus combining bypass diode and wire
11/12/2013US8581236 Electrically pumped optoelectronic semiconductor chip
11/12/2013US8581235 Resonance tunneling devices and methods of manufacturing the same
11/12/2013US8581233 Variable capacitor single-electron transistor including a P-N junction gate electrode
11/12/2013US8581232 Semiconductor light emitting device and method for manufacturing the same
11/12/2013US8581229 III-V light emitting device with thin n-type region
11/12/2013US8581227 Quantum computational systems
11/12/2013US8581226 Nonvolatile memory device
11/12/2013US8580660 Double and triple gate MOSFET devices and methods for making same
11/12/2013US8580652 Semiconductor device and manufacturing method thereof
11/12/2013US8580648 Capacitor having an electrode structure, method of manufacturing a capacitor having an electrode structure and semiconductor device having an electrode structure
11/12/2013US8580644 Multi-level lateral floating coupled capacitor transistor structures
11/12/2013US8580623 Thin film transistor substrate and display device including the same, and method for manufacturing thin film transistor substrate
11/12/2013US8580583 Magnetic tunnel junction device and fabrication
11/12/2013US8580580 Magnetic element with varying areal extents
11/12/2013US8580092 Adjustable process spacing, centering, and improved gas conductance
11/12/2013CA2536799C Semiconductor package and method of manufacturing the same
11/07/2013WO2013166079A1 Integrated circuit design
11/07/2013WO2013166078A1 Semiconductor device
11/07/2013WO2013166008A2 Mixed-technology combination of programmable elements
11/07/2013WO2013165630A1 A method of fabricating tunnel transistors with abrupt junctions
11/07/2013WO2013164659A1 Methods for producing new silicon light source and devices
11/07/2013US20130295759 Methods For Manufacturing Metal Gates
11/07/2013US20130295742 Method to tailor location of peak electric field directly underneath an extension spacer for enhanced programmability of a prompt-shift device
11/07/2013US20130295741 Semiconductor device and method for manufacturing semiconductor device
11/07/2013US20130295737 Semiconductor Cells, Arrays, Devices and Systems Having a Buried Conductive Line and Methods for Forming the Same
11/07/2013US20130295734 Method for forming gate, source, and drain contacts on a mos transistor
11/07/2013US20130295733 Si-Ge-Si SEMICONDUCTOR STRUCTURE HAVING DOUBLE COMPOSITIONALLY-GRADED HETERO-STRUCTURES AND METHOD FOR FORMING THE SAME
11/07/2013US20130295732 Method for making field effect transistor
11/07/2013US20130295731 Thin film transistor array panel and method for manufacturing the same
11/07/2013US20130295729 Method for manufacturing reverse-blocking semiconductor element
11/07/2013US20130295728 Semiconductor Structure and Manufacturing Method for the Same
11/07/2013US20130294180 Charge storage organic memory system
11/07/2013US20130294172 Non-volatile memory (nvm) and method for manufacturing thereof
11/07/2013US20130293800 Array substrate and a display apparatus having the same
11/07/2013US20130293031 Diode, Use Thereof, And A Method For Producing The Same
11/07/2013US20130292807 Semiconductor Device Dielectric Interface Layer
11/07/2013US20130292806 Methods For Manganese Nitride Integration
11/07/2013US20130292805 Methods of forming spacers on finfets and other semiconductor devices
11/07/2013US20130292802 Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
11/07/2013US20130292801 High throughput epitaxial liftoff for releasing multiple semiconductor device layers from a single base substrate
11/07/2013US20130292800 Processes for preparing copper indium gallium sulfide/selenide films
11/07/2013US20130292799 Semiconductor device and method of manufacturing the same
11/07/2013US20130292795 Semiconductor device
11/07/2013US20130292794 Semiconductor device and method of fabricating
11/07/2013US20130292793 Localized strain relief for an integrated circuit
11/07/2013US20130292792 Semiconductor device with buried bit lines and method for fabricating the same
11/07/2013US20130292791 Semiconductor device and method for forming the same
11/07/2013US20130292790 Semiconductor device and manufacturing method thereof
11/07/2013US20130292782 Memory device having a dielectric containing dysprosium doped hafnium oxide
11/07/2013US20130292781 Semiconductor structure and method of forming the same
11/07/2013US20130292776 Semiconductor device employing fin-type gate and method for manufacturing the same
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