Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2013
10/22/2013US8563975 Hetero pn junction semiconductor and process for producing the same
10/22/2013US8563974 High-gain complementary inverter with ambipolar thin film transistors and fabrication thereof
10/22/2013US8563973 Semiconductor device
10/22/2013US8563971 Light emitting device
10/22/2013US8563970 Organic light emitting diode display
10/22/2013US8563969 Benzanthracene compound and organic electroluminescence device using the same
10/22/2013US8563968 Electroluminescent device
10/22/2013US8563967 Organic functional device and manufacturing method therefor
10/22/2013US8563966 Nano metal particles based tunneling field effect transistor and nano-switch
10/22/2013US8563965 Doped graphene electronic materials
10/22/2013US8563964 Light emitting semiconductor device
10/22/2013US8563446 Technique to create a buried plate in embedded dynamic random access memory device
10/22/2013US8563406 Semiconductor substrate, semiconductor device, and manufacturing methods for them
10/22/2013US8563404 Process for dividing wafer into individual chips and semiconductor chips
10/22/2013US8563399 Detachable substrate and processes for fabricating and detaching such a substrate
10/22/2013US8563390 Semiconductor devices and methods of fabricating the same
10/22/2013US8563384 Source/drain extension control for advanced transistors
10/22/2013US8563366 Memory device having an integrated two-terminal current limiting resistor
10/22/2013US8563357 Method of packaging a die
10/22/2013US8563345 Integration of structurally-stable isolated capacitive micromachined ultrasonic transducer (CMUT) array cells and array elements
10/22/2013US8563344 Method for producing MEMS structures, and MEMS structure
10/22/2013US8562939 Semiconductor nanocrystal synthesis using a catalyst assisted two-phase reaction
10/22/2013US8562870 Polymer dopants
10/22/2013CA2430888C Nanosensors
10/17/2013WO2013155396A1 Method for heteroepitaxial growth of high channel conductivity and high breakdown voltage nitrogen polar high electron mobility transistors
10/17/2013WO2013155332A1 Thin film transistor
10/17/2013WO2013155329A1 Fabricating 3d non-volatile storage with additional word line select gates
10/17/2013WO2013155325A1 3d non-volatile storage with additional word line select gates
10/17/2013WO2013155108A1 N-polar iii-nitride transistors
10/17/2013WO2013154842A1 Aspect ratio dependent deposition to improve gate spacer profile, fin-loss and hardmask-loss for finfet scheme
10/17/2013WO2013154574A1 Conversion of strain-inducing buffer to electrical insulator
10/17/2013WO2013154490A2 Methods of nanowire functionalization, dispersion and attachment
10/17/2013WO2013154417A2 Nanomaterials and method of fabrication thereof
10/17/2013WO2013154195A1 Semiconductor device
10/17/2013WO2013154115A1 Semiconductor device
10/17/2013WO2013153998A1 Electronic device, method for manufacturing same, and image display device
10/17/2013WO2013153949A1 Magnetic field measurement device and magnetic field measurement method
10/17/2013WO2013153942A1 Magneto-resistance effect element and magnetic memory
10/17/2013WO2013153937A1 Semiconductor diode device
10/17/2013WO2013153927A1 Nitride semiconductor device
10/17/2013WO2013153909A1 Wide band gap semiconductor device and manufacturing method therefor
10/17/2013WO2013153870A1 Silicon carbide semiconductor device
10/17/2013WO2013153856A1 Power semiconductor device and method for producing same
10/17/2013WO2013153853A1 Semiconductor recording device
10/17/2013WO2013153835A1 Silicon carbide semiconductor device and method for producing same
10/17/2013WO2013153668A1 Diode
10/17/2013WO2013152458A1 Thin film transistor memory and preparation method therefor
10/17/2013WO2013071176A3 Three port mtj structure and integration
10/17/2013US20130273727 Semiconductor devices and methods for fabricating the same
10/17/2013US20130273708 Method of manufacturing a nanostructure quick-switch memristor
10/17/2013US20130273705 Multi-Fin Device and Method of Making Same
10/17/2013US20130273704 Methods of forming a polysilicon layer and methods of manufacturing semiconductor devices
10/17/2013US20130273703 Semiconductor device including a mos transistor and production method therefor
10/17/2013US20130273700 Fabricating 3d non-volatile storage with transistor decoding structure
10/17/2013US20130273683 Method of Fabricating An Electromechanical Structure Including at Least One Mechanical Reinforcing Pillar
10/17/2013US20130273682 Graphene pressure sensors
10/17/2013US20130272066 Strings of memory cells having string select gates, memory devices incorporating such strings, and methods of accessing and forming the same
10/17/2013US20130271690 Semiconductor device and method for manufacturing same
10/17/2013US20130271687 Thin Film Transistor and Display Apparatus Having the Same
10/17/2013US20130270681 Silicon wafer and fabrication method thereof
10/17/2013US20130270680 Method for forming semiconductor devices with active silicon height variation
10/17/2013US20130270679 Semiconductor film, method for manufacturing the same, and power storage device
10/17/2013US20130270669 Semiconductor structure with dispersedly arranged active region trenches
10/17/2013US20130270668 Trenched semiconductor structure
10/17/2013US20130270661 Magnetoresistive random access memory cell design
10/17/2013US20130270660 Sealed packaging for microelectromechanical systems
10/17/2013US20130270659 Angular velocity sensor
10/17/2013US20130270656 Replacement gate structures for semiconductor devices
10/17/2013US20130270655 Semiconductor devices having fin structures, and methods of forming semiconductor devices having fin structures
10/17/2013US20130270654 Semiconductor device with reduced contact resistance and method of manufacturing thereof
10/17/2013US20130270649 Bipolar transistor manufacturing method
10/17/2013US20130270640 Semiconductor device
10/17/2013US20130270638 Strained soi finfet on epitaxially grown box
10/17/2013US20130270637 Semiconductor device
10/17/2013US20130270636 Transistor Having An Isolated Body For High Voltage Operation
10/17/2013US20130270635 Semiconductor Device with False Drain
10/17/2013US20130270634 High voltage device and manufacturing method thereof
10/17/2013US20130270632 Semiconductor device having a floating semiconductor zone
10/17/2013US20130270631 Semiconductor device and method of manufacturing the same
10/17/2013US20130270630 Method for manufacturing a power device being integrated on a semiconductor substrate, in particular having a field plate vertical structure and corresponding device
10/17/2013US20130270628 Replacement Channels
10/17/2013US20130270626 Integrated circuit self aligned 3d memory array and manufacturing method
10/17/2013US20130270625 Three-dimensional semiconductor memory devices and methods of fabricating the same
10/17/2013US20130270624 Gate structure in non-volatile memory device
10/17/2013US20130270623 Semiconductor memory device and manufacturing method of semiconductor memory device
10/17/2013US20130270622 Nonvolatile semiconductor memory device having element isolating region of trench type
10/17/2013US20130270621 Nonvolatile semiconductor storage device and fabrication method thereof
10/17/2013US20130270619 Semiconductor device comprising ferroelectric elements and fast high-k metal gate transistors
10/17/2013US20130270617 Integration of bottom-up metal film deposition
10/17/2013US20130270616 Semiconductor device
10/17/2013US20130270615 Method for making transistors
10/17/2013US20130270614 Formation of a trench silicide
10/17/2013US20130270613 Method of trimming spacers and semiconductor structure thereof
10/17/2013US20130270612 Non-Planar FET and Manufacturing Method Thereof
10/17/2013US20130270611 Semiconductor structure having a source and a drain with reverse facets
10/17/2013US20130270608 Heterogeneous integration of group iii nitride on silicon for advanced integrated circuits
10/17/2013US20130270607 Semiconductor Device Channel System and Method
10/17/2013US20130270606 Semiconductor Device with Integrated Breakdown Protection
10/17/2013US20130270605 Apparatus and method for transient electrical overstress protection
10/17/2013US20130270579 Epitaxy Silicon on Insulator (ESOI)
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