Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2013
11/21/2013US20130306985 Semiconductor device and production method thereof
11/21/2013US20130306984 Normally-off-type heterojunction field-effect transistor
11/21/2013US20130306983 Semiconductor device and method for producing same
11/21/2013US20130306982 Semiconductor device and method for producing same
11/21/2013US20130306981 Nitride semiconductor device, nitride semiconductor wafer and method for manufacturing nitride semiconductor layer
11/21/2013US20130306980 Nitride semiconductor device and manufacturing method thereof
11/21/2013US20130306979 Semiconductor substrate and semiconductor device, and manufacturing method of semiconductor substrate
11/21/2013US20130306978 Passivation of group iii-nitride heterojunction devices
11/21/2013US20130306977 Compound semiconductor substrate and manufacturing method of the same
11/21/2013US20130306975 Nonvolatile Charge Trap Memory Device Having A Deuterated Layer In A Multi-Layer Charge-Trapping Region
11/21/2013US20130306974 Manufacturing method of thin film transistor array panel
11/21/2013US20130306972 Thin film transistor array panel having improved aperture ratio and method of manufacturing same
11/21/2013US20130306970 Positive photosensitive resin composition and uses thereof
11/21/2013US20130306969 Thin film transistor and pixel circuit having the same
11/21/2013US20130306968 Transistor structure and driving circuit structure
11/21/2013US20130306966 Transistor having sulfur-doped zinc oxynitride channel layer and method of manufacturing the same
11/21/2013US20130306965 Thin film transistor and thin film transistor array panel including the same
11/21/2013US20130306948 Peeling method and method for manufacturing display device using the peeling method
11/21/2013US20130306947 Light-emitting device and method for manufacturing the same
11/21/2013US20130306937 3d nano-electro-mechanical multiple-state carbon nanotube device structures and methods of fabrication
11/21/2013US20130306935 Double gate planar field effect transistors
11/21/2013DE19964626B4 Leistungshalbleiterbauelement mit halbisolierendem polykristallinem Silicium Power semiconductor component with a semi-insulating polycrystalline silicon
11/21/2013DE102013209222A1 ESD-Schutz für Anwendungen mit hoher Spannung ESD protection for high voltage applications
11/21/2013DE102013209110A1 Verfahren zur Herstellung von FinFET-Vorrichtungen mit alternativen Kanalmaterialien Process for the preparation of FinFET devices with alternative channel materials
11/21/2013DE102013105110A1 Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung A semiconductor device and method of manufacturing a semiconductor device
11/21/2013DE102013105060A1 Halbleitervorrichtungen mit Superjunction-Struktur und Verfahren zur Herstellung Semiconductor devices with super junction structure and methods for preparing
11/21/2013DE102013105057A1 Halbleiterstruktur, halbleiterbauelement mit einer halbleiterstruktur und verfahren zur herstellung einer halbleiterstruktur A semiconductor structure semiconductor device with a semiconductor structure and method of manufacturing a semiconductor structure
11/21/2013DE102013105009A1 Halbleitervorrichtung mit einer Silikatglasstruktur und Verfahren zum Herstellen einer Halbleitervorrichtung A semiconductor device comprising a silicate glass structure and method of manufacturing a semiconductor device
11/21/2013DE102012107496A1 Metallgatter-FINFET-Bauelement und Verfahren zu seiner Herstellung Metal-gate FinFET device and process for its preparation
11/21/2013DE102011080841B4 Verfahren zur Fertigung einer Siliciumcarbid-Halbleitervorrichtung A method for manufacturing a silicon carbide semiconductor device
11/21/2013DE102011054372B4 Verfahren zur Herstellung einer Halbleitertransistorstruktur A method of manufacturing a semiconductor transistor structure
11/21/2013DE102009022032B4 Halbleiterbauelement mit Schaltelektrode und Gateelektrode und Verfahren zum Schalten eines Halbleiterbauelements A semiconductor device comprising switching electrode and gate electrode and method for switching a semiconductor device
11/21/2013DE102008024467B4 Halbleitervorrichtung Semiconductor device
11/20/2013EP2665101A1 Method of producing a high-voltage LDMOS transistor
11/20/2013EP2664655A1 Novel synthesis for 5-alkyl-2,3-dihalogenthiophenes
11/20/2013EP2201601B1 Non-volatile semiconductor storage device and method of manufacturing the same
11/20/2013EP1949435B1 Structure and method to increase strain enhancement with spacerless fet and dual liner process
11/20/2013EP1726043B1 Self-aligned silicon carbide or gallium nitride semiconductor devices and methods of making the same
11/20/2013CN203300654U Oblique-trench Schottky barrier rectifying device
11/20/2013CN203300653U Aluminium alloy/chromium-silicon sandwich schottky diode
11/20/2013CN203300652U Porous substrate for terahertz Schottky diode
11/20/2013CN203300624U Film field effect transistor, array substrate and display device
11/20/2013CN103403886A Nitride semiconductor structure, nitride semiconductor light-emitting element, nitride semiconductor transistor element, method for manufacturing nitride semiconductor structure, and method for manufacturing nitride semiconductor element
11/20/2013CN103403873A Offset electrode TFT structure
11/20/2013CN103403872A Insulated-gate bipolar transistor
11/20/2013CN103403871A Quantum dot and nanowire synthesis
11/20/2013CN103403870A Trench MOS barrier schottky (TMBS) having multiple floating gates
11/20/2013CN103403850A Thin-film transistor and method for manufacturing same, and display device
11/20/2013CN103403849A Semiconductor device and process of producing same, and display device
11/20/2013CN103403848A 半导体器件 Semiconductor devices
11/20/2013CN103403846A Glass composition for semiconductor junction protection, production method for semiconductor device, and semiconductor device
11/20/2013CN103403840A Semiconductor element and method for producing same
11/20/2013CN103403214A Al alloy film for display devices or semiconductor devices, display device or semiconductor device equipped with al alloy film, and sputtering target
11/20/2013CN103400866A GaN Schottky diode based on modulation doping
11/20/2013CN103400865A Polarization doping-based GaN Schottky diode
11/20/2013CN103400864A Polarization doping-based GaN transverse Schottky diode
11/20/2013CN103400863A Transverse constant current diode
11/20/2013CN103400862A Semiconductor device
11/20/2013CN103400861A Semiconductor device
11/20/2013CN103400860A N type longitudinal silicon carbide MOS (metal oxide semiconductor) tube with high breakdown voltage
11/20/2013CN103400859A Graphene-based tunneling field-effect transistor unit and array and forming method of array
11/20/2013CN103400858A Three-dimensional semiconductor device on insulator and forming method of three-dimensional semiconductor device
11/20/2013CN103400857A Semiconductor device and method for manufacturing same
11/20/2013CN103400856A One-dimensional electronic gas GaN-based HEMT (High Electron Mobility Transistor) device adopting selective area epitaxy and preparation method thereof
11/20/2013CN103400855A High-voltage device grate and manufacturing method thereof
11/20/2013CN103400854A Grid-control semiconductor device with novel grid structure
11/20/2013CN103400853A Silicon carbide Schottky barrier diode and manufacturing method thereof
11/20/2013CN103400841A SiGe BiCMOS (Bipolar Complementary Metal Oxide Semiconductor)-based broadband radio frequency chip electrostatic protection circuit
11/20/2013CN103400840A Super barrier rectifier and preparation method thereof
11/20/2013CN103400838A Display device
11/20/2013CN103400837A Array substrate as well as preparation method and display device thereof
11/20/2013CN103400793A Isolation structure for integrated circuit and modular method of forming same
11/20/2013CN103400751A Manufacturing method of laminate structure including oxide semiconductor thin film layer
11/20/2013CN103400749A Failure analysis method for MIM capacitor
11/20/2013CN102386229B Gate controlled bipolar junction transistor on fin-like field effect transistor (finfet) structure
11/20/2013CN102315262B Semiconductor device and making method thereof
11/20/2013CN102244038B Thin film transistor and manufacturing method thereof
11/20/2013CN102194858B Semiconductor device
11/20/2013CN102194688B Power semiconductor device and method of manufacturing the same
11/20/2013CN102169906B Semiconductor device
11/20/2013CN102110715B Transistor, display device, electronic device and fabrication method of transistor
11/20/2013CN102104038B Semiconductor device provided with high-voltage and low-voltage components on identical substrate
11/20/2013CN101960584B Semiconductor device and method of manufacture thereof
11/20/2013CN101901787B Oxide thin film transistor and method of fabricating the same
11/20/2013CN101540331B System for display images and fabrication method thereof
11/19/2013US8587740 Display substrate, method of manufacturing the same, and display device having the same
11/19/2013US8587135 Semiconductor device having electrode/film opening edge spacing smaller than bonding pad/electrode edge spacing
11/19/2013US8587134 Semiconductor packages
11/19/2013US8587132 Semiconductor package including an organic substrate and interposer having through-semiconductor vias
11/19/2013US8587131 Through-silicon via and fabrication method thereof
11/19/2013US8587129 Integrated circuit packaging system with through silicon via base and method of manufacture thereof
11/19/2013US8587127 Semiconductor structures and methods of forming the same
11/19/2013US8587125 Method of manufacturing layered chip package
11/19/2013US8587122 Semiconductor flip-chip system having three-dimensional solder joints
11/19/2013US8587102 Vertical system integration
11/19/2013US8587097 Semiconductor device that suppresses malfunctions due to noise generated in internal circuit
11/19/2013US8587094 Semiconductor device using a compound semiconductor subtrate
11/19/2013US8587093 Multilayer device with organic and inorganic dielectric material
11/19/2013US8587087 Semiconductor device and manufacturing method of the same
11/19/2013US8587078 Integrated circuit and fabricating method thereof
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