Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2013
10/24/2013US20130280867 Methods for manufacturing thin film transistor and display device
10/24/2013US20130280859 Thin-film transistor and method for manufacturing same
10/24/2013US20130280858 Semiconductor device
10/24/2013US20130280857 Manufacturing method of semiconductor device
10/24/2013US20130280842 Microelectromechanical device including an encapsulation layer of which a portion is removed to expose a substantially planar surface having a portion that is disposed outside and above a chamber and including a field region on which integrated circuits are formed, and methods for fabricating same
10/24/2013US20130280838 Method for fabricating array substrate and fabrication apparatus used therefor
10/24/2013US20130279275 Semiconductor device
10/24/2013US20130279261 Nonvolatile semiconductor memory device including plural memory cells and a dummy cell coupled to an end of a memory cell
10/24/2013US20130279236 Method and system for utilizing perovskite material for charge storage and as a dielectric
10/24/2013US20130279145 Group iii-n nanowire transistors
10/24/2013US20130278855 Thin film transistor and display device using the same
10/24/2013US20130277810 Method for forming heat sink with through silicon vias
10/24/2013US20130277809 Method of manufacturing silicon single crystal, silicon single crystal, and wafer
10/24/2013US20130277805 Semiconductor structure and method of manufacturing the same
10/24/2013US20130277804 Bipolar junction transistors with reduced base-collector junction capacitance
10/24/2013US20130277799 Integrated Circuit Capacitor and Method
10/24/2013US20130277798 Implementing Semiconductor Signal-Capable Capacitors with Deep Trench and TSV Technologies
10/24/2013US20130277795 Farbrication of a localized thick box with planar oxide/soi interface on bulk silicon substrate for silicon photonics integration
10/24/2013US20130277793 Power device and fabricating method thereof
10/24/2013US20130277791 Schottky diode with opposite-polarity schottky diode field guard ring
10/24/2013US20130277790 Dual Profile Shallow Trench Isolation Apparatus and System
10/24/2013US20130277778 Magnetoresistive random access memory device and method of making same
10/24/2013US20130277777 MEMS Device Structure and Methods of Forming Same
10/24/2013US20130277776 Packaged MEMS Device and Method of Calibrating a Packaged MEMS Device
10/24/2013US20130277771 Capacitive Sensors and Methods for Forming the Same
10/24/2013US20130277770 MEMS Devices and Methods of Forming the Same
10/24/2013US20130277769 Non-Planar Transistors and Methods of Fabrication Thereof
10/24/2013US20130277768 Semiconductor Structure And Method For Manufacturing The Same
10/24/2013US20130277767 Etch stop layer formation in metal gate process
10/24/2013US20130277766 Multiple high-k metal gate stacks in a field effect transistor
10/24/2013US20130277765 Semiconductor device including graded gate stack, related method and design structure
10/24/2013US20130277764 Etch Stop Layer Formation In Metal Gate Process
10/24/2013US20130277763 Power semiconductor device
10/24/2013US20130277762 Semicondcutor device comprising transistor
10/24/2013US20130277759 Semiconductor Fin Structures and Methods for Forming the Same
10/24/2013US20130277755 High voltage switching device the method for forming thereof
10/24/2013US20130277748 Fin-type field effect transistors including aluminum doped metal-containing layer
10/24/2013US20130277747 Transistor having a stressed body
10/24/2013US20130277746 Integrated circuits having protruding source and drain regions and methods for forming integrated circuits
10/24/2013US20130277743 Stratified gate dielectric stack for gate dielectric leakage reduction
10/24/2013US20130277742 Semiconductor structure and method for manufacturing the same
10/24/2013US20130277741 Ldmos device with field effect structure to control breakdown voltage, and methods of making such a device
10/24/2013US20130277740 Corner layout for superjunction device
10/24/2013US20130277739 Integrated Lateral High Voltage Mosfet
10/24/2013US20130277738 Semiconductor device
10/24/2013US20130277737 Semiconductor device and method of manufacturing the same
10/24/2013US20130277736 Self-aligned contact for trench mosfet
10/24/2013US20130277735 Wafer level mosfet metallization
10/24/2013US20130277734 Semiconductor device and method for manufacturing same
10/24/2013US20130277733 Flash memory devices and methods for fabricating same
10/24/2013US20130277732 Sonos memory cells having non-uniform tunnel oxide and methods for fabricating same
10/24/2013US20130277730 Semiconductor device and method of manufacturing the same
10/24/2013US20130277729 Floating gate transistor memory with an organic semiconductor interlayer
10/24/2013US20130277728 Semiconductor chip and fabricating method thereof
10/24/2013US20130277727 Nonvolatile semiconductor memory device and method of manufacturing the same
10/24/2013US20130277722 Spin field effect logic devices
10/24/2013US20130277720 Fin field effect transistors
10/24/2013US20130277719 Gate Electrodes with Notches and Methods for Forming the Same
10/24/2013US20130277718 Jfet device and method of manufacturing the same
10/24/2013US20130277717 Frequency control device having improved isolation feature
10/24/2013US20130277715 Semiconductor Heterostructure and Transistor of HEMT Type, in Particular for Low-Frequency Low-Noise Cryogenic Applications.
10/24/2013US20130277714 Strain compensation in transistors
10/24/2013US20130277713 As/Sb Compound Semiconductors Grown on Si or Ge Substrate
10/24/2013US20130277710 Semiconductor component and method for producing it
10/24/2013US20130277709 Display device
10/24/2013US20130277688 Semiconductor device and manufacturing method thereof
10/24/2013US20130277687 High voltage field effect transitor finger terminations
10/24/2013US20130277686 Semiconductor Structure with Metal Gate and Method of Fabricating the Same
10/24/2013US20130277685 Soi transistors with improved source/drain structures with enhanced strain
10/24/2013US20130277684 Nitride semiconductor structure, nitride semiconductor light emitting element, nitride semiconductor transistor element, method of manufacturing nitride semiconductor structure, and method of manufacturing nitride semiconductor element
10/24/2013US20130277683 Non-planar iii-n transistor
10/24/2013US20130277680 High Speed Gallium Nitride Transistor Devices
10/24/2013US20130277678 Thin-film semiconductor device and method of manufacturing the same
10/24/2013US20130277677 Method for forming polycrystalline film, polycrystalline film and thin film transistor fabricated from the polycrystalline film
10/24/2013US20130277676 Semiconductor device and method for manufacturing the same
10/24/2013US20130277675 Soi wafer, manufacturing method therefor, and mems device
10/24/2013US20130277672 Amorphous oxide and field effect transistor
10/24/2013US20130277671 Semiconductor device
10/24/2013US20130277670 Semiconductor device and method for manufacturing the same
10/24/2013US20130277668 Array substrate and method of fabricating the same
10/24/2013US20130277666 Thin film transistor, thin film transistor array panel, and method of manufacturing a thin film transistor array panel
10/24/2013US20130277660 Thin film transistor and flat panel display device having the same
10/24/2013US20130277644 Graphene switching device including tunable barrier
10/24/2013DE112012000612T5 lonenimplantierte und selbstjustierende Gate-Struktur für GaN-Transistoren lonenimplantierte and self-aligned gate structure for GaN transistors
10/24/2013DE112012000501T5 Verfahren zur Herstellung eines rückwärts sperrenden Halbleiterelements A process for the preparation of a reverse-blocking semiconductor element
10/24/2013DE112011104672T5 Verfahren zum Verhindern einer Programmierungsstörung eines Flash-Speichers A method of preventing program disturb of a flash memory
10/24/2013DE112011103350T9 Chemisch-Mechanische Planarisierungsprozesse zum Herstellen von Finfet-Einheiten Chemical-mechanical planarization processes for producing FinFET devices
10/24/2013DE102013007215A1 Leistungsvorrichtung und Herstellungsverfahren hierfür Power device and manufacturing method thereof
10/24/2013DE102012206405A1 Verfahren zur Erzielung erhöhter Bauteilzuverlässigkeit eines Halbleiterbauelements durch Bereitstellen günstigerer Prozessbedingungen beim Aufwachsen einer Schicht mit großem ε Method of achieving increased component reliability of a semiconductor device by providing favorable process conditions during the growth of a layer with large ε
10/24/2013DE102012018611B3 Semiconductor component i.e. field effect-controlled semiconductor component, has circulating lateral diffusion barrier whose trench is cut through insulation region and divided into cell area and edge insulation region
10/24/2013DE102012008251A1 Verspanntes Bauelement und Verfahren zur Herstellung Strained component and methods for making
10/24/2013DE102005063582B3 Verfahren zum Herstellen eines Halbleiterbauelements A method of manufacturing a semiconductor device
10/23/2013EP2654084A1 Semiconductor device and process for production thereof
10/23/2013EP2654083A1 Improved method for producing a transistor structure with stacked nanowires and gate-all-around
10/23/2013EP2652791A2 Magnetic random access memory integration having improved scaling
10/23/2013EP2652790A2 Tunnel field effect transistor
10/23/2013EP2652789A1 Memory device comprising a strained semiconductor double-heterostructure and quantum dots
10/23/2013EP2652771A1 Nanowire epitaxy on a graphitic substrate
10/23/2013CN203250749U Stage-plane Schottky barrier diode
10/23/2013CN203250748U Enhanced N-channel insulated-gate field effect transistor
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