Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2013
10/23/2013CN203250747U 半导体器件 Semiconductor devices
10/23/2013CN203250746U Semiconductor device
10/23/2013CN203250745U 半导体器件 Semiconductor devices
10/23/2013CN203250744U Semiconductor device
10/23/2013CN203250743U Semiconductor transistor with mounting plate
10/23/2013CN203250742U IE type groove grid IGBT
10/23/2013CN203250741U 半导体器件 Semiconductor devices
10/23/2013CN203250740U Low-voltage chip
10/23/2013CN203250095U Array substrate and displaying device
10/23/2013CN103370793A Thermoelectric conversion element, method for producing thermoelectric conversion element, and thermoelectric conversion method
10/23/2013CN103370792A Insulated gate semiconductor device
10/23/2013CN103370791A 半导体器件 Semiconductor devices
10/23/2013CN103370783A Void-free wafer bonding using channels
10/23/2013CN103370777A 半导体装置 Semiconductor device
10/23/2013CN103370776A Thin-film transistor element and method for manufacturing same, organic electroluminescent display element, and organic electroluminescent display device
10/23/2013CN103370775A Thin-film transistor device and method for manufacturing same, organic electroluminescent display element, and organic electroluminescent display device
10/23/2013CN103370772A Insulating material forming composition for electronic elements, insulating material for electronic elements, electronic element, and thin film transistor
10/23/2013CN103367463A Terahertz transverse Schottky diode and manufacturing method thereof
10/23/2013CN103367462A Schottky semiconductor device with insulating layer isolated super-junction structure and preparation method for Schottky semiconductor device
10/23/2013CN103367461A Triple well isolated diode and method of making
10/23/2013CN103367460A Thin film transistor, method of manufacturing the same, display unit, and electronic apparatus
10/23/2013CN103367459A Semiconductor device and electronic apparatus
10/23/2013CN103367458A Thin film transistor and method for manufacturing thin film transistor
10/23/2013CN103367457A Active device
10/23/2013CN103367456A Thin film transistor and method for fabricating the same
10/23/2013CN103367455A Semiconductive device and thin film transistor
10/23/2013CN103367454A Thin film transistor, manufacturing method thereof, and active matrix display panel
10/23/2013CN103367453A Ultrathin transverse double diffusion metal-oxide semiconductor field-effect transistor and preparing method thereof
10/23/2013CN103367452A Green transistor, resistive random access memory and driving method for resistive random access memory
10/23/2013CN103367451A High-voltage semiconductor device and manufacturing method thereof
10/23/2013CN103367450A Radiation-hardened SOI (silicon-on-insulator) device and preparation method thereof
10/23/2013CN103367449A Semiconductor devices including guard ring and related semiconductor systems
10/23/2013CN103367448A Semiconductor device and method of manufacturing the same
10/23/2013CN103367447A Semiconductor arrangement with a superjunction transistor and a further device
10/23/2013CN103367446A Stress-reduced field-effect semiconductor device and method for forming therefor
10/23/2013CN103367445A LDMOS with accumulation enhancement implant
10/23/2013CN103367444A Top drain ldmos
10/23/2013CN103367443A Semiconductor device
10/23/2013CN103367442A Gate stack of fin field effect transistor
10/23/2013CN103367441A Mosfets with channels on nothing and methods for forming same
10/23/2013CN103367440A Fin structure for finfet device
10/23/2013CN103367439A Gate overvoltage protection for compound semiconductor transistors
10/23/2013CN103367438A Semiconductor device of metal semiconductor charge compensation and preparation method for semiconductor device
10/23/2013CN103367437A Groove MOS (Metal Oxide Semiconductor) device and manufacturing method thereof
10/23/2013CN103367436A Groove schottky MOS (Metal Oxide Semiconductor) device and manufacturing method thereof
10/23/2013CN103367435A Schottky groove MOS (Metal Oxide Semiconductor) semiconductor device and manufacturing method thereof
10/23/2013CN103367434A MOS (Metal Oxide Semiconductor) device with super-junction groove and manufacturing method thereof
10/23/2013CN103367433A Groove super junction MOS (Metal Oxide Semiconductor) device and manufacturing method thereof
10/23/2013CN103367432A Multi-grid field effect transistor and manufacturing method thereof
10/23/2013CN103367431A Ldmos晶体管及其制造方法 Ldmos transistor and its manufacturing method
10/23/2013CN103367430A Transistor and formation method thereof
10/23/2013CN103367429A Secondary-growth one-dimensional electron gas GaN-based HEMT (High Electron Mobility Transistor) device and preparation method
10/23/2013CN103367428A Etching-based one-dimensional electron gas GaN-based HEMT (high electron mobility transistor) device and preparation method thereof
10/23/2013CN103367427A Compound semiconductor device and method for manufacturing compound semiconductor device
10/23/2013CN103367426A Compound semiconductor device and manufacture method thereof
10/23/2013CN103367425A Compound semiconductor device and manufacture method thereof
10/23/2013CN103367424A Compound semiconductor device and manufacture method thereof
10/23/2013CN103367423A Semiconductor device and method for manufacturing semiconductor device
10/23/2013CN103367422A Compound semiconductor device and manufacture method thereof
10/23/2013CN103367421A Semiconductor device, nitride semiconductor crystal, method for manufacturing semiconductor device, and method for manufacturing nitride semiconductor crystal
10/23/2013CN103367420A Compound semiconductor device and manufacture method thereof
10/23/2013CN103367419A Compound semiconductor device and method of manufacturing the same
10/23/2013CN103367418A High electron mobility transistor and method of forming the same
10/23/2013CN103367417A Group III nitride high electron mobility transistor (HEMT)
10/23/2013CN103367416A Ion-implanted one-dimensional electron gas GaN-based HEMT (high electron mobility transistor) device and preparation method
10/23/2013CN103367415A Transistor
10/23/2013CN103367414A Structure of vertically pinched-off junction field-effect transistor and manufacturing method thereof
10/23/2013CN103367413A Insulated gate bipolar transistor and manufacturing method thereof
10/23/2013CN103367412A Reverse conducting insulated gate bipolar transistor
10/23/2013CN103367411A 功率半导体装置 The power semiconductor device
10/23/2013CN103367410A 半导体装置 Semiconductor device
10/23/2013CN103367409A Preparation method for germanium substrate and La-based high-dielectric constant gate dielectric material
10/23/2013CN103367408A Gate dielectric material based on silicon substrate high dielectric constant and preparation method for gate dielectric material
10/23/2013CN103367407A Electrical-free dummy gate
10/23/2013CN103367406A Integrated circuit (IC) including first memory cell transistor of read only memory (ROM) array and manufacturing method thereof
10/23/2013CN103367405A Semiconductor device and method for manufacturing the same
10/23/2013CN103367404A 薄膜晶体管 The thin film transistor
10/23/2013CN103367403A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
10/23/2013CN103367402A Protection diode
10/23/2013CN103367401A Transistor, semiconductor device and semiconductor module
10/23/2013CN103367400A A semiconductor structure and a manufacturing method thereof
10/23/2013CN103367399A Transistor and method for forming same
10/23/2013CN103367398A Terminal guard ring and manufacturing method thereof
10/23/2013CN103367397A Semiconductor substrate, semiconductor chip having same, and stacked semiconductor package
10/23/2013CN103367396A Super junction Schottky semiconductor device and preparation method thereof
10/23/2013CN103367395A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
10/23/2013CN103367394A Semiconductor device and manufacturing method
10/23/2013CN103367393A Transient voltage suppressing device and manufacturing technology method
10/23/2013CN103367392A Semiconductor on insulator structure and manufacturing method thereof
10/23/2013CN103367356A Semiconductor device having nitride layers
10/23/2013CN103367353A Active device and active device array substrate
10/23/2013CN103367256A Method for increasing height of source electrode of flash memory unit of discrete grid electrode by utilizing epitaxial layer
10/23/2013CN103367254A Metal gate semiconductor device and method of fabricating same
10/23/2013CN103367248A Array substrate, preparation method of array substrate and display device
10/23/2013CN103367231A Integrated circuit structure having air-gap trench isolation and related design structure
10/23/2013CN103367167A Method for manufacturing semiconductor device
10/23/2013CN103367166A Thin film transistor preparation method and system, thin film transistor and array substrate
10/23/2013CN103367165A Thin film transistor, manufacturing method thereof, array substrate and display
10/23/2013CN103367164A Grid electrode and preparation method thereof
10/23/2013CN103367163A MOSFET with selective dopant deactivation underneath gate
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