Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2013
11/06/2013CN102292801B Field effect transistor and method for manufacturing same
11/06/2013CN102290435B Large-area perfect quantum dot and manufacturing method of array thereof
11/06/2013CN102272933B Tunnel field effect transistor and method of manufacturing same
11/06/2013CN102246310B Thin film transistor and display device
11/06/2013CN102208411B Semiconductor device, light emitting apparatus and electronic device
11/06/2013CN102197490B Semiconductor device and method for manufacturing the same
11/06/2013CN102194696B Low-grid-impedance groove-type power semiconductor structure and manufacturing method thereof
11/06/2013CN102165693B Electric circuit switching device
11/06/2013CN102160104B Semiconductor device
11/06/2013CN102160102B Display device
11/06/2013CN102104039B High voltage semiconductor device
11/06/2013CN102097389B LDMOS (laterally diffused metal oxide semiconductor), semiconductor device integrated with same and manufacturing method thereof
11/06/2013CN102044426B Semiconductor device and manufacturing method thereof
11/06/2013CN102034868B Semiconductor device and field effect transistor
11/06/2013CN102005472B Manufacturing method of power semiconductor device
11/06/2013CN101794734B Semiconductor component and method of manufacture
11/06/2013CN101677103B Structure and method for forming high density trench field effect transistor
11/06/2013CN101645463B Semiconductor device and method for manufacturing the same
11/06/2013CN101404294B Thin film transistor, display device having thin film transistor, and method for manufacturing the same
11/06/2013CN101329848B Timing generation circuit for display apparatus and display apparatus incorporating the same
11/06/2013CN101276113B Electro-optical device and electronic apparatus
11/06/2013CN101114671B Semiconductor device and method of manufacturing the same
11/05/2013US8577778 Derivatives having demand-based, adjustable returns, and trading exchange therefor
11/05/2013US8576634 Semiconductor device comprising a memory cell group having a gate width larger than a second memory cell group
11/05/2013US8576367 Liquid crystal display panel device with a transparent conductive film formed pixel electrode and gate pad and data pad on substrate and method of fabricating the same
11/05/2013US8576348 Reflective liquid crystal display panel and device using same
11/05/2013US8576346 Thin film transistor array substrate for liquid crystal display
11/05/2013US8576144 Transistor circuit, display panel and electronic apparatus
11/05/2013US8575960 Semiconductor device
11/05/2013US8575766 Microelectronic assembly with impedance controlled wirebond and conductive reference element
11/05/2013US8575765 Semiconductor package having underfill agent dispersion
11/05/2013US8575762 Very extremely thin semiconductor package
11/05/2013US8575757 Semiconductor device and method of manufacturing the same
11/05/2013US8575755 Semiconductor device having mode of operation defined by inner bump assembly connection
11/05/2013US8575753 Semiconductor device having a conductive structure including oxide and non oxide portions
11/05/2013US8575743 Printed board and semiconductor integrated circuit
11/05/2013US8575741 Method of manufacturing a semiconductor device
11/05/2013US8575733 Semiconductor device
11/05/2013US8575729 Semiconductor chip with linear expansion coefficients in direction parallel to sides of hexagonal semiconductor substrate and manufacturing method
11/05/2013US8575728 Method and surface morphology of non-polar gallium nitride containing substrates
11/05/2013US8575727 Gate structures
11/05/2013US8575725 Through-silicon vias for semicondcutor substrate and method of manufacture
11/05/2013US8575722 Semiconductor substrate having multilayer film and method to reuse the substrate by delaminating a porous layer
11/05/2013US8575721 Semiconductor device
11/05/2013US8575719 Silicon nitride antifuse for use in diode-antifuse memory arrays
11/05/2013US8575717 Integrated circuit device and method of manufacturing the same
11/05/2013US8575715 Punch-through diode steering element
11/05/2013US8575710 Capacitive semiconductor pressure sensor
11/05/2013US8575709 High-k dielectric gate structures resistant to oxide growth at the dielectric/silicon substrate interface and methods of manufacture thereof
11/05/2013US8575708 Structure of field effect transistor with fin structure
11/05/2013US8575701 Semiconductor device where logic region and DRAM are formed on same substrate
11/05/2013US8575696 Semiconductor device, manufacturing method thereof, and display device
11/05/2013US8575695 Lateral super junction device with high substrate-drain breakdown and built-in avalanche clamp diode
11/05/2013US8575694 Insulated gate bipolar transistor structure having low substrate leakage
11/05/2013US8575693 Double diffused metal oxide semiconductor device
11/05/2013US8575692 Near zero channel length field drift LDMOS
11/05/2013US8575691 Lateral-diffusion metal-oxide semiconductor device
11/05/2013US8575690 Super-junction trench MOSFET having deep trenches with buried voids
11/05/2013US8575689 Silicon carbide semiconductor device and manufacturing method of the same
11/05/2013US8575688 Trench device structure and fabrication
11/05/2013US8575687 Semiconductor switch device
11/05/2013US8575686 Nonvolatile semiconductor memory transistor, nonvolatile semiconductor memory, and method for manufacturing nonvolatile semiconductor memory
11/05/2013US8575685 Buried field ring field effect transistor (BUF-FET) integrated with cells implanted with hole supply path
11/05/2013US8575684 Nonvolatile semiconductor memory device
11/05/2013US8575683 Semiconductor device and method of fabricating the same
11/05/2013US8575682 Three dimensional semiconductor memory devices and methods of forming the same
11/05/2013US8575681 Semiconductor memory device and method for manufacturing same
11/05/2013US8575680 Semiconductor device having air gap and method of fabricating the same
11/05/2013US8575679 Nonvolatile semiconductor memory device
11/05/2013US8575678 Semiconductor memory device with floating gate
11/05/2013US8575677 Semiconductor device and its manufacturing method
11/05/2013US8575676 Semiconductor storage device and method for manufacturing the same
11/05/2013US8575675 Nonvolatile memory device
11/05/2013US8575674 Ferromagnetic tunnel junction structure, and magneto-resistive element and spintronics device each using same
11/05/2013US8575672 Nonvolatile semiconductor memory devices
11/05/2013US8575671 Asymmetric MIM capacitor for DRAM devices
11/05/2013US8575669 Fabricating technique of a highly integrated semiconductor device in which a capacitor is formed between adjacent gate patterns by using a nanotube process
11/05/2013US8575668 Charge breakdown avoidance for MIM elements in SOI base technology and method
11/05/2013US8575665 Graphene electronic device and method of fabricating the same
11/05/2013US8575659 Carbon-beryllium combinationally doped semiconductor
11/05/2013US8575658 Semiconductor device and method for manufacturing same
11/05/2013US8575657 Direct growth of diamond in backside vias for GaN HEMT devices
11/05/2013US8575656 Semiconductor device having nitride layers
11/05/2013US8575655 Method and structure for PMOS devices with high K metal gate integration and SiGe channel engineering
11/05/2013US8575654 Method of forming strained semiconductor channel and semiconductor device
11/05/2013US8575653 Non-planar quantum well device having interfacial layer and method of forming same
11/05/2013US8575652 Semiconductor device and manufacturing method thereof
11/05/2013US8575648 Silicon carbide semiconductor device and method of manufacturing the same
11/05/2013US8575647 Bidirectional shockley diode with extended mesa
11/05/2013US8575643 Light-emitting device
11/05/2013US8575631 Lighting device
11/05/2013US8575628 Organic light emitting display
11/05/2013US8575627 Semiconductor light emitting element having barriers which prevent forward current in a semiconductor film thereof
11/05/2013US8575625 Semiconductor element mounting member, method of producing the same, and semiconductor device
11/05/2013US8575624 Semiconductor device
11/05/2013US8575622 Silicon carbide trench MOSFET having reduced on-resistance, increased dielectric withstand voltage, and reduced threshold voltage
11/05/2013US8575621 Low interconnect resistance integrated switches
11/05/2013US8575619 Semiconductor device and fabrication method thereof
11/05/2013US8575617 Thin film transistor array having improved connectivity between shorting bar and data lines
11/05/2013US8575616 Thin film transistor substrate and method for manufacturing the same
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