Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2013
10/31/2013US20130285167 Tmap sensor systems and methods for manufacturing those
10/31/2013US20130285162 Integrated getter area for wafer level encapsulated microelectromechanical systems
10/31/2013US20130285161 Integrated circuit having varying substrate depth and method of forming same
10/31/2013US20130285159 Method for etching gate stack
10/31/2013US20130285158 Semiconductor device and manufacturing method thereof
10/31/2013US20130285157 Semiconductor structure and method for manufacturing the same
10/31/2013US20130285154 CMOS Transistor With Dual High-k Gate Dielectric
10/31/2013US20130285153 Strained structure of semiconductor device and method of making the strained structure
10/31/2013US20130285149 Accumulation field effect microelectronic device and process for the formation thereof
10/31/2013US20130285147 Compact tid hardening nmos device and fabrication process
10/31/2013US20130285145 Formation of multi-height mugfet
10/31/2013US20130285144 Dual polysilicon gate of a semiconductor device with a multi-plane channel
10/31/2013US20130285141 Multi-Gate Devices with Replaced-Channels and Methods for Forming the Same
10/31/2013US20130285140 Semiconductor device and manufacturing method therefor
10/31/2013US20130285139 Semiconductor device and method for manufacturing the same
10/31/2013US20130285138 Method of Fabricating Tunnel Transistors With Abrupt Junctions
10/31/2013US20130285137 Programmable scr for ldmos esd protection
10/31/2013US20130285136 Schottky diode with enhanced breakdown voltage
10/31/2013US20130285135 Semiconductor Device with Semiconductor Fins and Floating Gate
10/31/2013US20130285134 Non-volatile memory device formed with etch stop layer in shallow trench isolation region
10/31/2013US20130285133 Non-volatile memory device formed by dual floating gate deposit
10/31/2013US20130285129 Pulsed laser anneal process for transistors with partial melt of a raised source-drain
10/31/2013US20130285128 Semiconductor device and method for fabricating the same
10/31/2013US20130285127 semiconductor structure and method of manufacturing the same
10/31/2013US20130285126 Narrow body field-effect transistor structures with free-standing extension regions
10/31/2013US20130285125 Through-Substrate Vias and Methods for Forming the Same
10/31/2013US20130285124 Jfet device structures and methods for fabricating the same
10/31/2013US20130285123 Transistor with improved sigma-shaped embedded stressor and method of formation
10/31/2013US20130285121 Bipolar transistor having collector with doping spike
10/31/2013US20130285120 Bipolar transistor having collector with grading
10/31/2013US20130285119 PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR (pHEMT) COMPRISING LOW TEMPERATURE BUFFER LAYER
10/31/2013US20130285116 Lattice-Mismatched Semiconductor Structures with Reduced Dislocation Defect Densities and Related Methods for Device Fabrication
10/31/2013US20130285115 Eptaxial structure
10/31/2013US20130285114 Twin-well lateral silicon controlled rectifier
10/31/2013US20130285112 High-trigger current scr
10/31/2013US20130285111 Diode-triggered silicon controlled rectifier with an integrated diode
10/31/2013US20130285110 Select devices including an open volume, and related methods, memory devices, and electronic systems
10/31/2013US20130285078 Semiconductor device having display device
10/31/2013US20130285072 Wide band gap semiconductor device and method for producing the same
10/31/2013US20130285071 Semiconductor device
10/31/2013US20130285070 Silicon carbide semiconductor device and method of manufacturing the same
10/31/2013US20130285069 SiC SEMICONDUCTOR ELEMENT
10/31/2013US20130285065 Pvd buffer layers for led fabrication
10/31/2013US20130285061 Semiconductor devices and methods of preparation
10/31/2013US20130285060 Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide
10/31/2013US20130285058 Thin-film transistor array substrate and manufacturing method thereof
10/31/2013US20130285053 Sputtering Target for Oxide Thin Film and Process for Producing the Sputtering Target
10/31/2013US20130285052 Semiconductor device and method for manufacturing the same
10/31/2013US20130285051 Method for manufacturing semiconductor device
10/31/2013US20130285050 Semiconductor device
10/31/2013US20130285049 Standard cell and semiconductor integrated circuit
10/31/2013US20130285048 Enhanced electron mobility at the interface between gd2o3(100)/n-si(100)
10/31/2013US20130285047 Semiconductor device
10/31/2013US20130285045 Oxide semiconductor film and semiconductor device
10/31/2013US20130285044 Display device, array substrate, and thin film transistor
10/31/2013US20130285020 Compressive (PFET) and Tensile (NFET) Channel Strain in Nanowire FETs Fabricated With a Replacement Gate Process
10/31/2013US20130285019 Field effect transistor and method of fabricating the same
10/31/2013US20130285017 Strained channel region transistors employing source and drain stressors and systems including the same
10/31/2013US20130285016 Epitaxial structure
10/31/2013US20130285014 Formation of a graphene layer on a large substrate
10/31/2013US20130285013 Compound semiconductor devices and methods of fabricating the same
10/31/2013US20130285008 Nanowires, method of fabrication the same and uses thereof
10/31/2013US20130285007 Silicon nanocrystal inks, films, and methods
10/31/2013US20130284256 Lead-free conductive paste composition and semiconductor devices made therewith
10/31/2013DE112012000689T5 Gate-Dielektrikum aus Nitrid für Graphen-Mosfet Gate dielectric of nitride for graphs Mosfet
10/31/2013DE112012000615T5 SiC-Bipolartransistor mit überwachsenem Emitter SiC bipolar emitter overgrown
10/31/2013DE112012000611T5 Siliziumkarbid-Bipolartransistor mit Abschirmbereichen und Verfahren zu dessen Herstellung Silicon carbide bipolar Abschirmbereichen and process for its preparation
10/31/2013DE112011104775T5 Verfahren zur Herstellung eines Schottky-n-Kanal-Feldeffekttransistors auf Germaniumbasis A process for producing a Schottky n-channel field-effect transistor based on germanium
10/31/2013DE102013207613A1 Ein pseudomorphischer Transistor mit hoher Elektromobilität (pHEMT), welcher eine Niedrig-Temperatur Pufferschicht aufweist A pseudomorphischer transistor with high electric mobility (pHEMT), which has a low-temperature buffer layer
10/31/2013DE102013103968A1 Method for multistage smoothing of density gradient for semiconductor element array, has arranging set of cells with density gradient in sub array, where each cell has smaller characteristic density than that of cell with another gradient
10/31/2013DE102013103798A1 Integrierte Schaltkreisvorrichtungen mit Spannungs-Umgebungs-Effekten und Verfahren zur Herstellung derselben Integrated circuit devices having voltage ambient effects and methods for making same
10/31/2013DE102013100904A1 FET e.g. planar FET, for use in memory cell of microprocessor, has crystalline silicon substrate comprising surface, and source or drain regions formed on surface, which surrounds channel portion along length of channel portion
10/31/2013DE102012215988A1 CET und GATE-Leckstromverringerung in Metall-GATE-Elektrodenstrukturen mit grossem ε durch Wärmebehandlung und nach Entfernung der Diffusionsschicht CET and gate leakage current reduction in metal gate electrode structures with large ε by heat treatment and after removal of the diffusion layer
10/31/2013DE102011056412B4 Hochvolttransistorbauelement und Herstellungsverfahren High-voltage transistor device and manufacturing method
10/31/2013DE102005010393B4 Halbleitersensor zur Erfassung einer dynamischen Grösse A semiconductor sensor for detecting a dynamic amount
10/30/2013EP2657976A2 Compound Semiconductor Device and Manufacturing Method of the Same
10/30/2013EP2657975A1 Liquid crystal display device and method for manufacturing the same
10/30/2013EP2657974A1 Semiconductor device and display device
10/30/2013EP2657973A1 Display device, array substrate, thin film transistor and method for manufacturing the same
10/30/2013EP2657969A2 Array substrate and method of fabricating the same
10/30/2013EP2657961A1 Method of production of a field effect transistor with local source/drain insulation
10/30/2013EP2657960A1 Field-effect transistor, process for producing the same, and electronic device including the same
10/30/2013EP2657959A1 Process for manufacture of silicon carbide semiconductor device
10/30/2013EP2657958A1 Method of manufacturing semiconductor device
10/30/2013EP2656393A1 Contact resistance reduction employing germanium overlayer pre-contact metalization
10/30/2013EP2656392A2 Transistors with high concentration of boron doped germanium
10/30/2013EP2656391A2 Column iv transistors for pmos integration
10/30/2013EP2656390A2 Uniaxially strained quantum well device and method of making same
10/30/2013EP2656389A1 Selective germanium p-contact metalization through trench
10/30/2013EP2656387A1 Complementary darlington emitter follower with improved switching speed and improved cross-over control and increased output voltage
10/30/2013EP2656382A2 Process margin engineering in charge trapping field effect transistors
10/30/2013EP2656381A2 Edge rounded field effect transistors and methods of manufacturing
10/30/2013CN203260589U Schottky diode
10/30/2013CN203260588U Groove terminal structure of power MOSFET
10/30/2013CN203260568U Large-power whole-wafer flat pressing/connecting-type packaging structure
10/30/2013CN103380506A Photoelectric conversion element, solar cell, and solar cell module
10/30/2013CN103380497A High-speed high-power semiconductor devices
10/30/2013CN103380490A Thin-film transistor device and method for manufacturing same, organic electroluminescent display element, and organic electroluminescent display device
10/30/2013CN103380489A Process margin engineering in charge trapping field effect transistors
10/30/2013CN103380488A Edge rounded field effect transistors and methods of manufacturing
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