Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2013
11/28/2013US20130312831 Techniques for Forming a Chalcogenide Thin Film Using Additive to a Liquid-Based Chalcogenide Precursor
11/28/2013US20130312819 Removal of stressor layer from a spalled layer and method of making a bifacial solar cell using the same
11/28/2013DE112012000727T5 Mehrschicht-Zwischenverbindungs-Erstintegrationsmethode für eine Integration auf der Grundlage von Transistoren mit Nanoröhren aus Graphen und Kohlenstoff Multi-layer interconnect Erstintegrationsmethode for integration on the basis of transistors with graphene and carbon nanotubes
11/28/2013DE112012000233T5 Gesteuerte Silicium-Gleichrichter (SCR), Herstellungsverfahren und Entwicklungsstrukturen Silicon controlled rectifier (SCR), production processes and development structures
11/28/2013DE102013209513A1 Abtrennen unter Verwendung von Teilbereichen einer Stressorschicht Separation using portions of a Stressorschicht
11/28/2013DE102013105134A1 Abschlussanordnung für vertikalen MOSFET Termination assembly for vertical MOSFET
11/28/2013DE102013008858A1 Kapazitätsstruktur Capacitance structure
11/28/2013DE102013008512A1 Gruppe lll-Nitrid-Transistor mit Ladungs-Induzierschicht Group III-nitride transistor charge Induzierschicht
11/28/2013DE102012108290B4 Struktur für FinFETs sowie System von SRAM-Zellen und Speicherzelle mit einer solchen Struktur Structure for FinFETs and system of SRAM cells and the memory cell having such a structure
11/28/2013DE102010036743B4 Bipolares Halbleiterbauelement, Speed-Diode und Herstellungsverfahren A bipolar semiconductor device, speed and diode manufacturing process
11/28/2013DE102009019684B4 Halbleitervorrichtung und Verfahren zu ihrer Herstellung Semiconductor device and process for their preparation
11/28/2013DE102008034164B4 Modul mit Leistung-Halbleiterchip und Verfahren Module with a power semiconductor chip and method
11/28/2013DE102006062077B4 Halbleitervorrichtung Semiconductor device
11/28/2013DE102006058228B4 Halbleitervorrichtung Semiconductor device
11/27/2013EP2667418A2 Semiconductor device
11/27/2013EP2667417A1 Graphene-based semiconductor device
11/27/2013EP2667416A1 Nanowire transistor, method for manufacturing the transistor and semiconductor component integrating the transistor
11/27/2013EP2667415A1 Heterojunction semiconductor device and manufacturing method
11/27/2013EP2667414A1 Method for producing silicon carbide semiconductor device
11/27/2013EP2667404A1 Manufacturing method for transistor, transistor, array substrate and display device
11/27/2013EP2667403A1 Process for manufacture of silicon carbide semiconductor device
11/27/2013EP2666187A1 Driving method for improving stability in motfts
11/27/2013CN203312302U Thin film transistor, array substrate and display
11/27/2013CN203312301U MOS super potential barrier rectifying device
11/27/2013CN203312300U Semiconductor device
11/27/2013CN203312299U Super barrier rectifying device
11/27/2013CN103415994A An apparatus for transducing a surface acoustic wave
11/27/2013CN103415926A Oxide for semiconductor layer for thin film transistor, semiconductor layer for thin film transistor which comprises said oxide, and thin film transistor
11/27/2013CN103415925A Semiconductor chip carriers with monolithically integrated quantum dot devices and method of manufacture thereof
11/27/2013CN103415924A Device mounting structure of semiconductor device
11/27/2013CN103415922A Semiconductor device and method for manufacturing semiconductor device
11/27/2013CN103415921A Memory device and method for manufacturing the same
11/27/2013CN103415920A 半导体器件 Semiconductor devices
11/27/2013CN103415916A Semiconductor device and method for manufacturing semiconductor device
11/27/2013CN103413837A MOS capacitor of germanium based high dielectric constant insulated medium and preparation method thereof
11/27/2013CN103413836A Trench gate Schottky barrier diode
11/27/2013CN103413835A Film transistor and manufacturing method thereof
11/27/2013CN103413834A Thin film transistor and manufacturing method, array substrate and display device thereof
11/27/2013CN103413833A Flexible ZnO based thin film transistor and preparation method thereof
11/27/2013CN103413832A Metal oxide thin film transistor and preparation method thereof
11/27/2013CN103413831A Horizontal high-voltage device and manufacturing method of horizontal high-voltage device
11/27/2013CN103413830A Laterally high-voltage MOSFET and manufacturing method thereof
11/27/2013CN103413829A U-type surrounding gate tunneling transistor device and manufacturing method thereof
11/27/2013CN103413828A Polygon channel layer multiple-grid structure tunneling transistor and forming method thereof
11/27/2013CN103413827A CdTe/PbTe heterojunction interface two-dimensional electronic gas structure
11/27/2013CN103413826A Planar insulated gate bipolar transistor and manufacturing method thereof
11/27/2013CN103413825A Flat type insulated gate bipolar transistor and manufacturing method thereof
11/27/2013CN103413824A RC-LIGBT device and manufacturing method thereof
11/27/2013CN103413823A 超级结晶体管及其形成方法 Super-junction transistor and method of forming
11/27/2013CN103413822A Method for reducing leakage current of floating buried layer semiconductor device
11/27/2013CN103413821A 半导体器件 Semiconductor devices
11/27/2013CN103413813A Array substrate, manufacturing method for array substrate and display device for array substrate
11/27/2013CN103413812A Array substrate, preparing method of array substrate and displaying device
11/27/2013CN103413810A Pixel structure, display panel, and manufacture method of pixel structure
11/27/2013CN103413783A Array substrate, method for manufacturing same and display device
11/27/2013CN103413776A Composite substrate with isolation layer and manufacturing method thereof
11/27/2013CN103413764A Super junction power device and forming method thereof
11/27/2013CN103413763A 超级结晶体管及其形成方法 Super-junction transistor and method of forming
11/27/2013CN103413762A Semiconductor structure and corresponding manufacturing method thereof
11/27/2013CN103413761A 绝缘栅双极型晶体管及其制造方法 Insulated gate bipolar transistor and its manufacturing method
11/27/2013CN102437195B Film transistor and its manufacturing method
11/27/2013CN102427077B High-voltage isolation ring structure used in bridge type driving circuit
11/27/2013CN102386082B Method for forming semiconductor device
11/27/2013CN102368501B Preparation method of Gbased enhanced MOSHFET device
11/27/2013CN102246327B Magnetoresistance effect element and magnetic memory cell and magnetic random access memory using same
11/27/2013CN102246309B Trench-based power semiconductor devices with increased breakdown voltage characteristics
11/27/2013CN102136490B Semiconductor device and power conversion apparatus using same
11/26/2013US8595790 Devices, systems, and methods for providing increased security when multiplexing one or more services at a customer premises
11/26/2013US8595673 Dummy fill to reduce shallow trench isolation (STI) stress variation on transistor performance
11/26/2013US8593862 Spin-transfer torque magnetic random access memory having magnetic tunnel junction with perpendicular magnetic anisotropy
11/26/2013US8593582 Active matrix substrate and display device
11/26/2013US8593066 Light emitting device, driving method for same and electronic apparatus
11/26/2013US8592993 Method and structure of integrated micro electro-mechanical systems and electronic devices using edge bond pads
11/26/2013US8592991 Semiconductor device, fabricating method thereof and semiconductor package including the semiconductor device
11/26/2013US8592990 Semiconductor device and method of manufacturing semiconductor device
11/26/2013US8592982 Semiconductor package having proximity communication signal input terminals and manufacturing methods thereof
11/26/2013US8592981 Via structure and method thereof
11/26/2013US8592980 Carbon nanotube-modified low-K materials
11/26/2013US8592979 Semiconductor device conductive pattern structures and methods of manufacturing the same
11/26/2013US8592978 Method of fabricating semiconductor device and the semiconductor device
11/26/2013US8592975 Semiconductor device and method of dual-molding die formed on opposite sides of build-up interconnect structure
11/26/2013US8592961 Method of manufacturing a semiconductor device
11/26/2013US8592955 Accurate deposition of nano-objects on a surface
11/26/2013US8592954 Semiconductor element and method of manufacturing the semiconductor element
11/26/2013US8592953 Structures including passivated germanium
11/26/2013US8592952 Semiconductor chip and semiconductor package with stack chip structure
11/26/2013US8592949 Method of texturing the surface of a silicon substrate, and textured silicon substrate for a solar cell
11/26/2013US8592948 Substrate, epitaxial layer provided substrate, method for producing substrate, and method for producing epitaxial layer provided substrate
11/26/2013US8592946 Lithography for printing constant line width features
11/26/2013US8592938 GaN-based Schottky barrier diode with field plate
11/26/2013US8592930 Magnetic memory element, magnetic memory and initializing method
11/26/2013US8592929 Symmetrically switchable spin-transfer-torque magnetoresistive device
11/26/2013US8592928 Magnetic random access memory and method of manufacturing the same
11/26/2013US8592927 Multilayers having reduced perpendicular demagnetizing field using moment dilution for spintronic applications
11/26/2013US8592925 Functional device with functional structure of a microelectromechanical system disposed in a cavity of a substrate, and manufacturing method thereof
11/26/2013US8592924 Semiconductor device including gate electrode having a laminate structure and a plug electrically connected thereto
11/26/2013US8592923 Coupling well structure for improving HVMOS performance
11/26/2013US8592921 Deep trench embedded gate transistor
11/26/2013US8592917 Semiconductor device and method for manufacturing same
11/26/2013US8592915 Doped oxide for shallow trench isolation (STI)
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