Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2013
10/23/2013CN103367160A Formation method for fin field effect transistor
10/23/2013CN103367156A Method for forming semiconductor device and method for forming fin field effect transistor
10/23/2013CN103367154A Transistor and method for forming same
10/23/2013CN103367153A Fin field effect transistor and method for forming same
10/23/2013CN103367151A A MOS device with a source/drain region close to a channel region and a method for producing the same
10/23/2013CN103367148A 晶体管及其制造方法 Transistor and its manufacturing method
10/23/2013CN103367145A Trench VDMOS device and manufacturing method thereof
10/23/2013CN103367144A Trench-type structure of junction electric-field shielding power MOSFET and manufacturing method
10/23/2013CN103367142A Compound semiconductor device and method of manufacturing the same
10/23/2013CN103367141A Manufacturing method for MOS capacitor and MOS capacitor
10/23/2013CN103367140A Pulse power semiconductor switch based on silicon carbide and manufacturing method thereof
10/23/2013CN103367131A Fins and formation methods for fins and fin field effect transistor
10/23/2013CN103367128A Ultra steep inverted doped channel forming method, semiconductor device and semiconductor device manufacturing method
10/23/2013CN103367127A 半导体结构及其制造方法 The semiconductor structure and a method of manufacturing
10/23/2013CN103367116A High-density capacitor structure and manufacturing method thereof
10/23/2013CN103367113A Method for producing Group III nitride semiconductor and Group III nitride semiconductor
10/23/2013CN103367112A Manufacturing method of semiconductor device, semiconductor device, and semiconductor crystal growth substrate
10/23/2013CN102483972B Conducting layer, and transducer and flexible wiring board using same
10/23/2013CN102479800B Terminal protecting structure of super junction device
10/23/2013CN102420243B Germanium-silicon heterojunction bipolar transistor and manufacturing method thereof
10/23/2013CN102412277B VPNP device structure used in BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) process and manufacturing method thereof
10/23/2013CN102386218B Vertical parasitic type precision navigation processor (PNP) device in bipolar complementary metal oxide semiconductor (BiCMOS) technology and manufacture method thereof
10/23/2013CN102130169B Power MOS (Metal Oxide Semiconductor) device structure with shielding grid and manufacturing method thereof
10/23/2013CN102054867B Structure and method for improving working frequency of power metal oxide semiconductor (MOS) transistor
10/23/2013CN102017129B Non-volatile semiconductor memory device
10/23/2013CN102001961B Method for synthesizing amide lanthanum complexes and application thereof in preparation of high-K material precursor
10/23/2013CN101622713B Source/drain stressor and method therefor
10/23/2013CN101615632B Structure and method for forming shielded gate trench FET with inter-electrode dielectric having nitride layer therein
10/22/2013USRE44547 Semiconductor device having deep trench charge compensation regions and method
10/22/2013US8564575 Electrooptical device and method of fabricating the same
10/22/2013US8564515 Gate driver circuit and display device having the same
10/22/2013US8564131 Semiconductor device and method for manufacturing the same
10/22/2013US8564129 Low resistivity contact
10/22/2013US8564127 Semiconductor device
10/22/2013US8564126 Semiconductor arrangement
10/22/2013US8564114 Semiconductor package thermal tape window frame for heat sink attachment
10/22/2013US8564106 Wafer level packaging
10/22/2013US8564102 Semiconductor device having through silicon via (TSV)
10/22/2013US8564101 Semiconductor apparatus having a through-hole interconnection
10/22/2013US8564099 Semiconductor structure and a method for manufacturing the same
10/22/2013US8564096 Diffused integrated resistor
10/22/2013US8564094 Capacitors including at least two portions of a metal nitride material, methods of forming such structures, and semiconductor devices including such structures
10/22/2013US8564088 Semiconductor device having variably laterally doped zone with decreasing concentration formed in an edge region
10/22/2013US8564087 Photodiode manufacturing method and photodiodes
10/22/2013US8564080 Magnetic storage element utilizing improved pinned layer stack
10/22/2013US8564079 STT MRAM magnetic tunnel junction architecture and integration
10/22/2013US8564078 Method for producing a micromechanical component having a trench structure for backside contact
10/22/2013US8564077 Package for electronic component, manufacturing method thereof and sensing apparatus
10/22/2013US8564073 Programmable connection and isolation of active regions in an integrated circuit using ambiguous features to confuse a reverse engineer
10/22/2013US8564070 Large bit-per-cell three-dimensional mask-programmable read-only memory
10/22/2013US8564063 Semiconductor device having metal gate and manufacturing method thereof
10/22/2013US8564062 High voltage MOS array with gate contact on extended drain region
10/22/2013US8564061 Semiconductor device
10/22/2013US8564060 Semiconductor device with large blocking voltage and manufacturing method thereof
10/22/2013US8564059 High-voltage vertical power component
10/22/2013US8564058 Super-junction trench MOSFET with multiple trenched gates in unit cell
10/22/2013US8564057 Power devices, structures, components, and methods using lateral drift, fixed net charge, and shield
10/22/2013US8564056 Semiconductor device with vertical channel over buried bit line
10/22/2013US8564055 Shielded gate trench MOSFET device and fabrication
10/22/2013US8564053 Trench MOSFET with trenched floating gates in termination
10/22/2013US8564052 Trench MOSFET with trenched floating gates in termination
10/22/2013US8564051 Power semiconductor device with buried source electrode
10/22/2013US8564050 3D semiconductor devices and methods of fabricating same
10/22/2013US8564049 Flip chip contact (FCC) power package
10/22/2013US8564048 Contact barrier modulation of field effect transistors
10/22/2013US8564047 Semiconductor power devices integrated with a trenched clamp diode
10/22/2013US8564046 Vertical semiconductor devices
10/22/2013US8564045 Memory arrays having substantially vertical, adjacent semiconductor structures and the formation thereof
10/22/2013US8564044 Non-volatile memory and logic circuit process integration
10/22/2013US8564043 EEPROM cell structure and a method of fabricating the same
10/22/2013US8564042 Dual storage node memory
10/22/2013US8564039 Semiconductor devices including gate structures comprising colossal magnetocapacitive materials
10/22/2013US8564038 Nonvolatile semiconductor memory device including resistive element
10/22/2013US8564035 Image sensor and image sensor integrated type active matrix type display device
10/22/2013US8564031 High voltage-resistant lateral double-diffused transistor based on nanowire device
10/22/2013US8564030 Self-aligned trench contact and local interconnect with replacement gate process
10/22/2013US8564029 Transistor and method for forming the same
10/22/2013US8564028 Low on-resistance wide band gap semiconductor device and method for producing the same
10/22/2013US8564027 Nano-devices formed with suspended graphene membrane
10/22/2013US8564025 Nanowire FET having induced radial strain
10/22/2013US8564024 Trench-based power semiconductor devices with increased breakdown voltage characteristics
10/22/2013US8564022 Power device and method for manufacturing the same
10/22/2013US8564021 Semiconductor device and its manufacturing method
10/22/2013US8564020 Transistors and rectifiers utilizing hybrid electrodes and methods of fabricating the same
10/22/2013US8564019 Heterostructures comprising crystalline strain relaxation layers
10/22/2013US8564018 Relaxed silicon germanium substrate with low defect density
10/22/2013US8564017 Silicon carbide semiconductor device and method for manufacturing same
10/22/2013US8563999 Light emitting device, light emitting device package and illumination system for reducing dislocation in semiconductor layer
10/22/2013US8563996 Luminescent light source having blue light emitting diode chip and red light emitting diode chip
10/22/2013US8563995 Ultraviolet light emitting diode/laser diode with nested superlattice
10/22/2013US8563994 Light-emitting element, display device, and method for producing light-emitting element
10/22/2013US8563993 Display device and fabrication method for display device
10/22/2013US8563989 Light emitting device with an electrode having an dual metal alloy
10/22/2013US8563987 Semiconductor device and method for fabricating the device
10/22/2013US8563986 Power semiconductor devices having selectively doped JFET regions and related methods of forming such devices
10/22/2013US8563985 Light-emitting device and projector
10/22/2013US8563984 Semiconductor device
10/22/2013US8563981 Semiconductor device
10/22/2013US8563980 Array substrate and manufacturing method
10/22/2013US8563976 Semiconductor device and manufacturing method thereof
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