Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2013
10/30/2013CN103378178A Schottky semiconductor device with groove structures and preparation method thereof
10/30/2013CN103378177A Schottky semiconductor device with grooves and preparation method thereof
10/30/2013CN103378176A Schottky semiconductor device with charge compensation and manufacturing method thereof
10/30/2013CN103378175A Charge compensation Schottky semiconductor device and preparation method thereof
10/30/2013CN103378174A Schottky semiconductor device with charge compensation and preparation method thereof
10/30/2013CN103378173A Schottky semiconductor device with charge compensation and manufacturing method thereof
10/30/2013CN103378172A Schottky semiconductor device and method for preparing same
10/30/2013CN103378171A Groove Schottky semiconductor device and preparation method thereof
10/30/2013CN103378170A Schottky semiconductor device with super junction and preparation method thereof
10/30/2013CN103378169A Twin-well lateral silicon controlled rectifier
10/30/2013CN103378168A Semiconductor device
10/30/2013CN103378167A Semiconductor devices and methods for fabricating the same
10/30/2013CN103378166A 半导体器件和可编程的非易失性存储设备 Semiconductor devices and programmable non-volatile memory device
10/30/2013CN103378165A Semiconductor devices and methods for fabricating the same
10/30/2013CN103378164A Array substrate and method of fabricating the same
10/30/2013CN103378163A Display device, array substrate, and thin film transistor thereof
10/30/2013CN103378162A Thin-film transistor and producing method thereof
10/30/2013CN103378161A Field effect transistor and method of fabricating the same
10/30/2013CN103378160A Device structures compatible with fin-type field-effect transistor technologies
10/30/2013CN103378159A Transistor arrangement with a mosfet and manufacture method thereof
10/30/2013CN103378158A 半导体装置 Semiconductor device
10/30/2013CN103378157A Semiconductor device channel system and method
10/30/2013CN103378156A Multi-gate devices with replaced-channels and methods for forming the same
10/30/2013CN103378155A Dummy finfet structure and method of making same
10/30/2013CN103378154A Transistor having an isolated body for high voltage operation
10/30/2013CN103378153A Structure and method for finfet integrated with capacitor
10/30/2013CN103378152A Fin type field-effect tube and forming method thereof
10/30/2013CN103378151A Silicon germanium structure for reducing load effect and forming method thereof
10/30/2013CN103378150A Semiconductor device and method for manufacturing same
10/30/2013CN103378149A Mosfet及其制造方法 Mosfet and manufacturing method
10/30/2013CN103378148A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
10/30/2013CN103378147A Dual vertical channel transistor
10/30/2013CN103378146A Groove-type metal oxide semiconductor field-effect transistor and production method thereof
10/30/2013CN103378145A High-voltage component and manufacturing method thereof
10/30/2013CN103378144A Impulse power thyristor
10/30/2013CN103378143A Thyristor with buffer layer structure
10/30/2013CN103378142A Power device and fabricating method thereof
10/30/2013CN103378141A 绝缘栅双极型晶体管及其制作方法 Insulated gate bipolar transistor and manufacturing method thereof
10/30/2013CN103378140A Insulated gate bipolar transistor
10/30/2013CN103378139A 半导体结构及其制作方法 Semiconductor structure and fabrication method
10/30/2013CN103378138A 双极晶体管及其制作方法 Bipolar transistor and manufacturing method thereof
10/30/2013CN103378137A Gate electrodes with notches and methods for forming the same
10/30/2013CN103378136A Structure and method for NFET with high k metal gate
10/30/2013CN103378135A Apparatus for FinFETs
10/30/2013CN103378134A Gate structure and forming method thereof, semiconductor structure and forming method thereof
10/30/2013CN103378133A 肖特基位障二极管及其制造方法 The method of manufacturing a Schottky diode barrier bits
10/30/2013CN103378132A Strained structure of semiconductor device and method of making the strained structure
10/30/2013CN103378131A Charge compensation Schottky semiconductor device and manufacturing method thereof
10/30/2013CN103378130A Semiconductor structure and manufacturing process thereof
10/30/2013CN103378129A Semiconductor structure and manufacturing method thereof
10/30/2013CN103378128A Passivation layer structure, and forming method and etching method thereof
10/30/2013CN103378127A 垂直沟道晶体管 Vertical channel transistor
10/30/2013CN103378101A Semiconductor device and method of manufacturing the same
10/30/2013CN103378099A Device and methods for high-k and metal gate stacks
10/30/2013CN103378093A Schottky diode with opposite-polarity schottky diode field guard ring
10/30/2013CN103378008A Bimetallic grid CMOS device and manufacturing method thereof
10/30/2013CN103378002A Integrated circuits having protruding source and drain regions and methods for forming integrated circuits
10/30/2013CN103377947A Semiconductor structure and manufacturing method thereof
10/30/2013CN103377946A Semiconductor structure and manufacturing method thereof
10/30/2013CN103377941A PMOS transistor and forming method
10/30/2013CN103377940A P-type transmission grid electrode transistor for SRAM and manufacture method thereof
10/30/2013CN103377932A Pmos晶体管及其制造方法 Pmos transistor and its manufacturing method
10/30/2013CN103377931A Semiconductor structure and manufacturing method thereof
10/30/2013CN103377930A Semiconductor structure and manufacturing method thereof
10/30/2013CN103377929A Perpendicular double-diffusion metal oxide semiconductor transistor and manufacturing method thereof
10/30/2013CN103377927A 悬浮纳米线场效应晶体管及其形成方法 Suspended nanowire field effect transistor and method of forming
10/30/2013CN103377925A Semiconductor structure and manufacture method thereof
10/30/2013CN103377924A Semiconductor structure and manufacturing method thereof
10/30/2013CN103377923A MOS transistor and forming method
10/30/2013CN103377922A Fin type field effect transistor and forming method thereof
10/30/2013CN103377920A Insulated gate bipolar transistor and manufacturing method thereof
10/30/2013CN103377919A 绝缘栅双极晶体管及其制作方法 Insulated gate bipolar transistor and manufacturing method thereof
10/30/2013CN103377918A Npn异质结双极晶体管及其制造方法 Npn heterojunction bipolar transistor and its manufacturing method
10/30/2013CN103377917A Deep groove insulated gate bipolar transistor and manufacturing method thereof
10/30/2013CN103377893A Gate oxide layer implementation process for DDMOS steps
10/30/2013CN103377887A 场效应晶体管及其制作方法 Field effect transistor and manufacturing method thereof
10/30/2013CN102420247B Group-III nitride HEM (High Electron Mobility Transistor) device
10/30/2013CN102412161B Corrosion method of semiconductor device side wall and semiconductor device made thereof
10/30/2013CN102412160B Corrosion method of semiconductor device side wall and semiconductor device made thereof
10/30/2013CN102301484B Asymmetric junction field effect transistor and method of manufacturing same
10/30/2013CN102299092B Semiconductor device and forming method thereof
10/30/2013CN102214610B High full-well capacity pixel with graded photodetector implant
10/30/2013CN102208443B Semiconductor device and forming method thereof
10/30/2013CN102208438B Virtually substrate-less composite power semiconductor device and method
10/30/2013CN102097458B Methods and devices for fabricating and assembling printable semiconductor elements
10/30/2013CN102089878B Nonvolatile semiconductor memory device
10/30/2013CN102064102B Methods and devices for forming nanostructure monolayers and devices including such monolayers
10/30/2013CN102057490B Power field effect transistor
10/30/2013CN101981677B Epitaxial substrate for smeiconductor element, semiconductor element, and process for producing epitaxial substrate for semiconductor element
10/30/2013CN101728339B Sealing device
10/30/2013CN101661957B Structure and method for CMOS device with doped conducting metal oxide as gate electrode
10/30/2013CN101651144B Memory devices including vertical pillars and methods of manufacturing and operating same
10/30/2013CN101499423B Semiconductor component and its manufacturing method, and manufacturing method for complementary semiconductor component
10/30/2013CN101257040B Semiconductor device with gate stack structure
10/29/2013USRE44562 Solder joint flip chip interconnection having relief structure
10/29/2013US8570479 Liquid crystal electrooptical device
10/29/2013US8570455 Semiconductor device, semiconductor device manufacturing method, liquid crystal display device and electronic apparatus
10/29/2013US8569945 Organic light emitting device having cathode including a magnesium-calcium layer and method for fabricating the same
10/29/2013US8569897 Protection layer for preventing UBM layer from chemical attack and oxidation
10/29/2013US8569895 Semiconductor device and method of forming mold underfill using dispensing needle having same width as semiconductor die
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