Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2013
11/21/2013WO2013171012A1 Method of producing a high-voltage ldmos transistor
11/21/2013WO2013170605A1 Thin film transistor array substrate, method for manufacturing same, display panel, and display device
11/21/2013WO2013170574A1 Oxide thin film transistor and manufacturing method thereof, array substrate and display device
11/21/2013WO2013170517A1 Method based on standard cmos ic process for manufacturing complementary tunneling field-effect transistor
11/21/2013WO2013170511A1 Trench-type power mosfet and preparation method therefor
11/21/2013WO2013170477A1 Semiconductor device and manufacturing method therefor
11/21/2013WO2012177776A3 Display pixel having oxide thin-film transistor (tft) with reduced loading
11/21/2013US20130309867 Lateral semiconductor device and manufacturing method for the same
11/21/2013US20130309859 Silicon carbide semiconductor device and method for producing the same
11/21/2013US20130309857 Mask free protection of work function material portions in wide replacement gate electrodes
11/21/2013US20130309851 Silicon carbide semiconductor device and manufacturing method therefor
11/21/2013US20130309836 Semiconductor device and method for manufacturing the same
11/21/2013US20130309831 Method of Manufacturing a Semiconductor Device
11/21/2013US20130309830 Self-Aligned III-V MOSFET Fabrication with In-Situ III-V Epitaxy And In-Situ Metal Epitaxy And Contact Formation
11/21/2013US20130309828 Manufacturing method of semiconductor device
11/21/2013US20130309827 Method for Manufacturing a Transistor for Preventing or Reducing Short Channel Effect
11/21/2013US20130309825 Method of manufacturing semiconductor device having multi-channels
11/21/2013US20130309824 Method of manufacturing semiconductor device
11/21/2013US20130309823 Integrating schottky diode into power mosfet
11/21/2013US20130309822 Semiconductor device and method for manufacturing the same
11/21/2013US20130309819 Array substrate for in-plane switching mode liquid crystal display device and fabricating method thereof
11/21/2013US20130309808 Method for manufacturing transistor
11/21/2013US20130309449 Method for treating the surface of a silicon substrate
11/21/2013US20130307606 Super high voltage device and method for operating a super high voltage device
11/21/2013US20130307513 High voltage field effect transistors
11/21/2013US20130307154 Integrated circuit wiring fabrication and related methods and apparatus
11/21/2013US20130307127 Semiconductor Device Including A Silicate Glass Structure and Method of Manufacturing A Semiconductor Device
11/21/2013US20130307126 Semiconductor structure and process thereof
11/21/2013US20130307123 Semiconductor device having plurality of bonding layers and method of manufacturing the same
11/21/2013US20130307122 Bipolar transistor with embedded epitaxial external base region and method of forming the same
11/21/2013US20130307117 Structure and Method for Inductors Integrated into Semiconductor Device Packages
11/21/2013US20130307112 Substrate diode formed by angled ion implantation processes
11/21/2013US20130307111 Schottky barrier diode having a trench structure
11/21/2013US20130307100 Magnetic memory device and method of manufacturing the same
11/21/2013US20130307099 Magnetic memory element and method of manufacturing the same
11/21/2013US20130307098 Magnetoresistive elements and memory devices including the same
11/21/2013US20130307097 Magnetoresistive random access memory cell design
11/21/2013US20130307094 Sensor
11/21/2013US20130307092 Semiconductor device and method of manufacturing the same
11/21/2013US20130307091 Schottky Diodes Having Metal Gate Electrodes and Methods of Formation Thereof
11/21/2013US20130307090 Adjusting of strain caused in a transistor channel by semiconductor material provided for the threshold adjustment
11/21/2013US20130307089 Self-Aligned III-V MOSFET Fabrication With In-Situ III-V Epitaxy And In-Situ Metal Epitaxy And Contact Formation
11/21/2013US20130307088 Metal gate finfet device and method of fabricating thereof
11/21/2013US20130307082 Semiconductor devices with self-aligned source drain contacts and methods for making the same
11/21/2013US20130307079 Etch resistant barrier for replacement gate integration
11/21/2013US20130307078 Silicon on insulator complementary metal oxide semiconductor with an isolation formed at low temperature
11/21/2013US20130307077 Stress-generating shallow trench isolation structure having dual composition
11/21/2013US20130307075 Crystalline thin-film transistors and methods of forming same
11/21/2013US20130307073 Fluoropolymer Mask for Transistor Channel Definition
11/21/2013US20130307072 Double Diffused Metal Oxide Semiconductor Device and Manufacturing Method Thereof
11/21/2013US20130307071 High voltage metal-oxide-semiconductor transistor device and layout pattern thereof
11/21/2013US20130307070 Double Diffused Drain Metal Oxide Semiconductor Device and Manufacturing Method Thereof
11/21/2013US20130307069 Method for forming semiconductor layout patterns, semiconductor layout patterns, and semiconductor structure
11/21/2013US20130307067 Slit Recess Channel Gate
11/21/2013US20130307066 Trench mosfet with trenched floating gates having thick trench bottom oxide as termination
11/21/2013US20130307064 Power transistor device and fabricating method thereof
11/21/2013US20130307063 MANUFACTURING METHOD OF GaN-BASED SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
11/21/2013US20130307062 Vertical Transistor Component
11/21/2013US20130307061 Semiconductor device
11/21/2013US20130307060 Trench semiconductor devices with edge termination structures, and methods of manufacture thereof
11/21/2013US20130307059 Semiconductor Device and Method for Manufacturing a Semiconductor Device
11/21/2013US20130307058 Semiconductor Devices Including Superjunction Structure and Method of Manufacturing
11/21/2013US20130307057 Semiconductor device
11/21/2013US20130307056 Semiconductor device
11/21/2013US20130307055 Electronic device comprising rf-ldmos transistor having improved ruggedness
11/21/2013US20130307053 Memory transistor with multiple charge storing layers and a high work function gate electrode
11/21/2013US20130307052 Sonos ono stack scaling
11/21/2013US20130307051 Memory structure
11/21/2013US20130307050 Nonvolatile memory device and method for fabricating the same
11/21/2013US20130307049 Semiconductor device and method of fabricating the same
11/21/2013US20130307048 Semiconductor Device and a Method of Manufacturing the Same
11/21/2013US20130307046 Electronic device including a nonvolatile memory structure having an antifuse component
11/21/2013US20130307045 Non-Volatile Memories and Methods of Fabrication Thereof
11/21/2013US20130307044 Selective Air Gap Isolation In Non-Volatile Memory
11/21/2013US20130307043 Mos capacitors with a finfet process
11/21/2013US20130307038 Finfet with stressors
11/21/2013US20130307037 Method for producing semiconductor device and semiconductor device
11/21/2013US20130307036 Semiconductor device and a method of manufacturing the same
11/21/2013US20130307035 Image sensor and method for fabricating the same
11/21/2013US20130307034 Semiconductor Structure and Method for Manufacturing the Same
11/21/2013US20130307033 Borderless Contact For An Aluminum-Containing Gate
11/21/2013US20130307032 Methods of forming conductive contacts for a semiconductor device
11/21/2013US20130307031 Semiconductor structure, semiconductor device having a semiconductor structure, and method for manufacturing a semiconductor structure
11/21/2013US20130307030 Micro electro mechanical device and manufacturing method thereof
11/21/2013US20130307027 Method for heteroepitaxial growth of high channel conductivity and high breakdown voltage nitrogen polar high electron mobility transistors
11/21/2013US20130307026 High electron mobility transistors and methods of manufacturing the same
11/21/2013US20130307025 Transistor-based apparatuses, systems and methods
11/21/2013US20130307024 Semiconductor device and method for manufacturing semiconductor device
11/21/2013US20130307023 Semiconductor device and method for manufacturing semiconductor device
11/21/2013US20130307022 Semiconductor device and manufacturing method of the same
11/21/2013US20130307021 CMOS Device and Method of Forming the Same
11/21/2013US20130307020 Thyristor component
11/21/2013US20130307019 Semiconductor device
11/21/2013US20130307018 Semiconductor Device Including First and Second Semiconductor Materials
11/21/2013US20130306991 Semiconductor device
11/21/2013US20130306990 Wafer precursor prepared for group iii nitride epitaxial growth on a composite substrate having diamond and silicon carbide layers, and semiconductor laser formed thereon
11/21/2013US20130306989 Diamond and diamond composite material
11/21/2013US20130306988 Diamond and diamond composite material
11/21/2013US20130306987 Silicon carbide semiconductor device and method for manufacturing same
11/21/2013US20130306986 Silicon carbide semiconductor device