Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2013
11/26/2013US8592913 Semiconductor device for preventing plasma induced damage and layout thereof
11/26/2013US8592912 Semiconductor device and method of fabricating the same
11/26/2013US8592911 Asymmetric semiconductor device having a high-k/metal gate and method of manufacturing the same
11/26/2013US8592910 Semiconductor body with a protective structure and method for manufacturing the same
11/26/2013US8592908 Semiconductor substrate and manufacturing method of semiconductor device
11/26/2013US8592906 High-voltage semiconductor device with lateral series capacitive structure
11/26/2013US8592905 High-voltage semiconductor device
11/26/2013US8592904 Semiconductor device including Schottky barrier diode
11/26/2013US8592903 Bipolar semiconductor device and manufacturing method
11/26/2013US8592902 Semiconductor structure that reduces the effects of gate cross diffusion and method of forming the structure
11/26/2013US8592901 Metal oxide semiconductor field transistor and method of fabricating the same
11/26/2013US8592899 Transistor having vertical channel
11/26/2013US8592897 Semiconductor device comprising transistor structures and methods for forming same
11/26/2013US8592896 Semiconductor device and method for manufacturing the same
11/26/2013US8592895 Field effect transistor with source, heavy body region and shielded gate
11/26/2013US8592894 Method of forming a power semiconductor device and power semiconductor device
11/26/2013US8592893 Power semiconductor device
11/26/2013US8592892 Nonvolatile semiconductor memory device and method for manufacturing the same
11/26/2013US8592891 Methods for fabricating semiconductor memory with process induced strain
11/26/2013US8592890 Semiconductor memory device and method for manufacturing same
11/26/2013US8592889 Memory structure
11/26/2013US8592888 Field effect transistor for sensing deformation
11/26/2013US8592887 Semiconductor storage device including a memory cell structure
11/26/2013US8592886 Erasable programmable single-ploy nonvolatile memory
11/26/2013US8592885 Nonvolatile semiconductor memory device and method for manufacturing the same
11/26/2013US8592882 Magnetic random access memory and manufacturing method thereof
11/26/2013US8592879 Method for manufacturing semiconductor device
11/26/2013US8592878 Semiconductor devices with low leakage Schottky contacts
11/26/2013US8592877 Embedded MEMS sensors and related methods
11/26/2013US8592876 Micro-electro-mechanical system (MEMS) capacitive OHMIC switch and design structures
11/26/2013US8592874 Solid state imaging device
11/26/2013US8592873 Semiconductor memory devices and methods of forming the same
11/26/2013US8592871 Nitride semiconductor device and method of manufacturing nitride semiconductor device
11/26/2013US8592870 Pseudo buried layer and manufacturing method of the same, deep hole contact and bipolar transistor
11/26/2013US8592869 Nitride-based heterojunction semiconductor device and method for the same
11/26/2013US8592868 Normally-off semiconductor devices
11/26/2013US8592867 Wide bandgap HEMTS with source connected field plates
11/26/2013US8592866 Transistor
11/26/2013US8592865 Overvoltage tolerant HFETs
11/26/2013US8592862 Gallium nitride semiconductor structures with compositionally-graded transition layer
11/26/2013US8592861 Display device and manufacturing method of the display device
11/26/2013US8592860 Apparatus and method for protection of electronic circuits operating under high stress conditions
11/26/2013US8592859 Methods and apparatus for antimonide-based backward diode millimeter-wave detectors
11/26/2013US8592855 Light emitting device package including a substrate having at least two recessed surfaces
11/26/2013US8592839 Vertical light-emitting devices having patterned emitting unit and methods of manufacturing the same
11/26/2013US8592836 Light emitting device and illumination apparatus using same
11/26/2013US8592833 Organic light emitting diode display including a microlens array
11/26/2013US8592832 Organic light emission diode display device and method of fabricating the same
11/26/2013US8592830 LED unit
11/26/2013US8592826 Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy
11/26/2013US8592825 Semiconductor device having Si-substrate and process to form the same
11/26/2013US8592824 High efficiency indirect transition semiconductor ultraviolet light emitting device
11/26/2013US8592823 Compound semiconductor device and method for manufacturing the same
11/26/2013US8592822 Light emitting device and lighting apparatus
11/26/2013US8592820 Layers and patterns of nanowire or carbon nanotube using chemical self assembly and fabricating method in liquid crystal display device thereby
11/26/2013US8592818 Organic light emitting display device and method of manufacturing the same
11/26/2013US8592817 Self-aligned metal oxide TFT with reduced number of masks
11/26/2013US8592816 Thin film transistor matrix device including first and second connection lines
11/26/2013US8592815 Light emitting display apparatus
11/26/2013US8592814 Device with oxide semiconductor thin film transistor
11/26/2013US8592811 Active matrix substrate and display panel
11/26/2013US8592809 Organic light-emitting display device and method of manufacturing the same
11/26/2013US8592803 Germanium-based quantum well devices
11/26/2013US8592801 Up-conversion device with broad band absorber
11/26/2013US8592800 Optical devices featuring nonpolar textured semiconductor layers
11/26/2013US8592799 Graphene electronic device and method of fabricating the same
11/26/2013US8592798 Non-volatile storage device and method for manufacturing the same
11/26/2013US8592792 Heterojunction device comprising a semiconductor oxide and a resistivity-switching oxide or nitride
11/26/2013US8592790 Phase-change random access memory device and method of manufacturing the same
11/26/2013US8592308 Silicided device with shallow impurity regions at interface between silicide and stressed liner
11/26/2013US8592285 Method of bonding semiconductor substrate and MEMS device
11/26/2013US8592280 Fin field effect transistor devices with self-aligned source and drain regions
11/26/2013US8592279 Electronic device including a tapered trench and a conductive structure therein and a process of forming the same
11/26/2013US8592264 Source-drain extension formation in replacement metal gate transistor device
11/26/2013US8592250 Self-aligned process to fabricate a memory cell array with a surrounding-gate access transistor
11/21/2013WO2013173414A1 Semiconductor device with junction termination extension
11/21/2013WO2013173150A1 Epitaxial semiconductor resistor with semiconductor structures on same substrate
11/21/2013WO2013172986A1 Preventing shorting of adjacent devices
11/21/2013WO2013172394A1 Semiconductor device
11/21/2013WO2013172238A1 Method for producing thin-film transistor
11/21/2013WO2013172237A1 Thin-film transistor, method for producing same, display device, image sensor, x-ray sensor, and x-ray digital imaging device
11/21/2013WO2013172236A1 Method for manufacturing field-effect transistor
11/21/2013WO2013172185A1 Semiconductor device and method for manufacturing same
11/21/2013WO2013172180A1 Diode, method for manufacturing diode, and method for designing diode
11/21/2013WO2013172143A1 Semiconductor device, display apparatus, electronic apparatus, and semiconductor device manufacturing method
11/21/2013WO2013172140A1 Semiconductor device
11/21/2013WO2013172125A1 Silicon carbide semiconductor device and method for producing same
11/21/2013WO2013172124A1 Silicon carbide semiconductor device
11/21/2013WO2013172116A1 Semiconductor device
11/21/2013WO2013172115A1 Semiconductor device
11/21/2013WO2013172079A1 Semiconductor device and method for manufacturing same
11/21/2013WO2013172059A1 Semiconductor device
11/21/2013WO2013172032A1 Manufacturing method for silicon carbide semiconductor device
11/21/2013WO2013172010A1 Sensor device
11/21/2013WO2013171975A1 Method for manufacturing nitride semiconductor device
11/21/2013WO2013171956A1 Semiconductor device and method for manufacturing same
11/21/2013WO2013171947A1 Storage device, storage element
11/21/2013WO2013171908A1 Method for producing semiconductor device, and semiconductor device
11/21/2013WO2013171892A1 Semiconductor device and method for producing same
11/21/2013WO2013171873A1 Semiconductor device
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