Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2013
11/13/2013EP2662896A2 Semiconductor layer structure
11/13/2013EP2662887A1 Semiconductor element and method for producing same
11/13/2013EP2662886A1 Method for producing semiconductor device
11/13/2013EP2662884A1 Group 13 nitride semiconductor device and method of its manufacture
11/13/2013EP2662882A1 Semiconductor element and method for producing same
11/13/2013EP2661776A2 Transistor including multiple reentrant profiles
11/13/2013EP2661775A1 Semiconductor device
11/13/2013EP2661774A1 Transistor including multi-layer reentrant profile
11/13/2013EP2661773A2 Semiconductor device arrangement with a first semiconductor device and with a plurality of second semi conductor devices
11/13/2013EP2661768A2 Method of making a semiconductor component comprising a lateral resistive region
11/13/2013CN203288623U Photovoltaic wiring box with improved conducting assembly
11/13/2013CN203288601U Thin film transistor pixel structure, array substrate and display device
11/13/2013CN203288600U Thin film transistor, array substrate and display device
11/13/2013CN203288599U VDMOS device of novel structure
11/13/2013CN203288598U Trench type MOSFET provided with terminal voltage-resistant structure
11/13/2013CN203288597U Insulated gate bipolar transistor
11/13/2013CN203288596U Insulated gate bipolar transistor
11/13/2013CN203288595U Power semiconductor device
11/13/2013CN103392234A Silicon nanotube MOSFET
11/13/2013CN103392233A Array column integrator
11/13/2013CN103392225A 氮化物半导体装置 The nitride semiconductor device
11/13/2013CN103392224A Semiconductor device and method for producing same
11/13/2013CN103391942A Novel heterocyclic compound, method for producing intermediate therefor, and use thereof
11/13/2013CN103390654A Multi-groove terminal Schottky device and preparation method thereof
11/13/2013CN103390653A Groove structure schottky device and manufacture method thereof
11/13/2013CN103390652A Groove charge compensation schottky semiconductor device and manufacture method thereof
11/13/2013CN103390651A Groove schottky semiconductor device and manufacturing method thereof
11/13/2013CN103390650A Semiconductor device with passive metal schottky and manufacturing method thereof
11/13/2013CN103390649A Device and method for high-k and metal gate stack
11/13/2013CN103390648A Semiconductor structure and method of forming the same
11/13/2013CN103390647A Power MOS device structure
11/13/2013CN103390646A 半导体元件及其制造方法 Semiconductor device and manufacturing method
11/13/2013CN103390645A LDMOS transistor and manufacturing method thereof
11/13/2013CN103390644A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
11/13/2013CN103390643A Gallium nitride power field effect transistor
11/13/2013CN103390642A IGBT (insulated gate bipolar translator) device and packaging method for whole-wafer IGBT chip
11/13/2013CN103390641A Insulated gate bipolar transistor and self-alignment manufacturing method thereof
11/13/2013CN103390640A Silicon schottky junction taking Bi2Se3 film as contact layer and preparation method
11/13/2013CN103390639A Group 13 nitride semiconductor device and method of its manufacture
11/13/2013CN103390638A Semiconductor device and fabricating method thereof
11/13/2013CN103390637A FinFET及其制造方法 And a method of manufacturing FinFET
11/13/2013CN103390636A P通道闪存结构 P-channel flash memory structure
11/13/2013CN103390635A Semiconductor device with passive metal PN knot and manufacturing method thereof
11/13/2013CN103390634A SiC MOSFET结构及其制造方法 SiC MOSFET structure and manufacturing method
11/13/2013CN103390618A Embedded gate-grounded N-channel metal oxide semiconductor (NMOS)-triggered silicon-controlled transient voltage suppressor
11/13/2013CN103390586A A method of forming a semiconductor device having a raised source and drain regions, and the corresponding semiconductor device
11/13/2013CN103390585A Strained-channel semiconductor device fabrication
11/13/2013CN103390560A Forming method of semiconductor device and semiconductor device
11/13/2013CN103390557A 半导体集成器件及其制作方法 The semiconductor integrated device and manufacturing method thereof
11/13/2013CN103390545A Method for increasing drain-source breakdown voltage of trench NMOS and structure of trench NMOS
11/13/2013CN102906636B 液晶显示装置 The liquid crystal display device
11/13/2013CN102884633B Circuit board and display device
11/13/2013CN102629577B TFT array substrate and manufacturing method thereof and display device
11/13/2013CN102456735B Semiconductor apparatus and manufacturing method for same
11/13/2013CN102412304B Inverse ratio or small ratio NMOS (N-channel Metal Oxide Semiconductor) tube layout structure resistant to total dose irradiation effect
11/13/2013CN102265403B Bipolar/dual fet structure including enhancement and depletion mode fets with isolated channels
11/13/2013CN102201370B Semiconductor device and manufacturing method thereof
11/13/2013CN102171834B Method of simulation and simulation device
11/13/2013CN102037557B Non-volatile semiconductor storage device and method of manufacturing the same
11/13/2013CN102027612B Carbon nanotube composite, organic semiconductor composite, and field-effect transistor
11/13/2013CN101974335B The improvement of the luminescent efficiency of semiconductor nanocrystals by surface treatment
11/13/2013CN101645448B Rectifier with pn clamp regions under trenches
11/13/2013CN101540333B Thin-film transistor substrate and display device having the same
11/12/2013US8583903 Helical band geometry for dynamical topology changing
11/12/2013US8583111 Switch circuit and method of switching radio frequency signals
11/12/2013US8582068 Active matrix substrate with connections of switching elements and inspecting wirings, display device, method for inspecting active matrix substrate, and method for inspecting display device
11/12/2013US8581424 Information recording/reproducing device
11/12/2013US8581423 Double solid metal pad with reduced area
11/12/2013US8581421 Semiconductor package manufacturing method and semiconductor package
11/12/2013US8581417 Semiconductor device stack with bonding layer and wire retaining member
11/12/2013US8581416 Method of forming a semiconductor device and leadframe therefor
11/12/2013US8581410 Semiconductor device and method of manufacturing the same
11/12/2013US8581406 Flip chip mounted monolithic microwave integrated circuit (MMIC) structure
11/12/2013US8581404 Structure of gold bumps and gold conductors on one IC die and methods of manufacturing the structures
11/12/2013US8581400 Post-passivation interconnect structure
11/12/2013US8581396 Semiconductor device
11/12/2013US8581395 Hybrid integrated circuit device and electronic device
11/12/2013US8581385 Semiconductor chip to dissipate heat, semiconductor package including the same, and stack package using the same
11/12/2013US8581367 Semiconductor device having electrode film in which film thickness of periphery is thinner than film thickness of center
11/12/2013US8581365 Bipolar junction transistor with layout controlled base and associated methods of manufacturing
11/12/2013US8581361 Semiconductor apparatus
11/12/2013US8581359 Schottky barrier diode
11/12/2013US8581356 Semiconductor structures for biasing devices
11/12/2013US8581355 Micro electric mechanical system device and method of producing the same
11/12/2013US8581354 Semiconductor device carrying micro electro mechanical system
11/12/2013US8581353 Multi-layer gate dielectric
11/12/2013US8581352 Electronic devices including barium strontium titanium oxide films
11/12/2013US8581351 Replacement gate with reduced gate leakage current
11/12/2013US8581350 Field effect transistor and semiconductor device, and method for manufacturing same
11/12/2013US8581349 3D memory semiconductor device and structure
11/12/2013US8581347 Forming bipolar transistor through fast EPI-growth on polysilicon
11/12/2013US8581344 Laterally diffused metal oxide semiconductor transistors
11/12/2013US8581343 Electrical connectivity for circuit applications
11/12/2013US8581342 Semiconductor device with field electrode and method
11/12/2013US8581341 Power MOSFET with embedded recessed field plate and methods of fabrication
11/12/2013US8581340 Semiconductor device of which breakdown voltage is improved
11/12/2013US8581339 Structure of NPN-BJT for improving punch through between collector and emitter
11/12/2013US8581338 Lateral-diffused metal oxide semiconductor device (LDMOS) and fabrication method thereof
11/12/2013US8581337 Semiconductor device for increasing bit line contact area, and module and system including the same
11/12/2013US8581336 Power trench MOSFET rectifier
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