Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2013
12/05/2013US20130320330 Semiconductor device and method for manufacturing the same
12/05/2013US20130320329 Thin film transistor structure and array substrate using the same
12/05/2013US20130320328 Thin film transistor, thin film transistor array panel including the same, and manufacturing method thereof
12/05/2013US20130320327 Thin film transistor and method of forming the same
12/05/2013US20130320326 Insulating material forming composition for electronic devices, insulating material for electronic devices, electronic devices and thin film transistor
12/05/2013US20130320317 Thin film transistor substrate and display
12/05/2013US20130320303 Radiation Hardened Transistors Based on Graphene and Carbon Nanotubes
12/05/2013US20130320294 Common-substrate semiconductor devices having nanowires or semiconductor bodies with differing material orientation or composition
12/05/2013DE112012000823T5 Kombinierter Sensor Combined sensor
12/05/2013DE112007002213B4 Symmetrischer bipolarer Flächentransistor und Verfahren zur Herstellung Balanced bipolar junction transistor and methods for making
12/05/2013DE102013209685A1 Source- und Drainarchitektur in einem aktiven Gebiet eines P-Kanaltransistors durch schräge Implantation Source and drain architecture in an active region of a P-channel transistor by oblique implantation
12/05/2013DE102013208318A1 Vorrichtungen auf Thyristorbasis, die widerstandsfähig gegen den Latch-Up-Effekt sind Thyristor-based devices that are resistant to the Latchup
12/05/2013DE102013105763A1 Halbleitervorrichtung und verfahren zum herstellen einer halbleitervorrichtung A semiconductor device and method of manufacturing a semiconductor device
12/05/2013DE102013105714A1 Monolithisch integrierter HEMT und Stromschutzvorrichtung Monolithically integrated HEMT and overcurrent protection device
12/05/2013DE102013105713A1 Verbindungshalbleitertransistor mit selbstanordnendem Gate Compound semiconductor transistor with gate selbstanordnendem
12/05/2013DE102013105567A1 Halbleitervorrichtung mit Trenchstrukturen A semiconductor device with trench structures
12/05/2013DE102013105537A1 Mit einem Gate versehene Diode, Batterieladeanordnung und Generatoranordnung Provided with a gate diode array and battery charging alternator assembly
12/05/2013DE102013008456A1 In-situ Sperren-Oxidationstechniken und -gestaltungen In-situ oxidation barrier techniques and designs
12/05/2013DE102012109921A1 Vertikaler Leistungs-MOSFET und Verfahren zu dessen Herstellung Vertical power MOSFET and method of manufacturing the
12/05/2013DE102012104770A1 Method for checking protective circuit of e.g. P-channel transistor to measure concentration of hydrogen ion in process automation field, involves outputting error message if measured values lie outside of tolerance range
12/05/2013DE102010000818B4 MEMS-Resonatorbauelemente MEMS resonator devices
12/05/2013DE102008054094B4 Halbleiterbauelement mit einer integrierten Widerstandsstruktur A semiconductor device with an integrated resistor structure
12/05/2013DE102006046845B4 Halbleiterbauelement mit verbesserter Robustheit A semiconductor device with improved robustness
12/05/2013DE102006009985B4 Superjunction-Halbleiterbauteil Superjunction semiconductor device
12/05/2013DE102006005033B4 Halbleiterbauelementanordnung mit einem Leistungstransistor und einer Temperaturmessanordnung A semiconductor device assembly comprising a power transistor and a temperature measurement arrangement
12/05/2013DE102005014743B4 MOS-Feldplattentrench-Transistoreinrichtung MOS field plate trench transistor means
12/04/2013EP2669966A1 Photoelectric conversion element, solar cell, and solar cell module
12/04/2013EP2669951A1 Method for producing semiconductor device, and semiconductor device
12/04/2013EP2669950A1 Oxide semiconductor sputtering target, method of manufacturing thin-film transistors using the same, and thin-film transistor manufactured using the same
12/04/2013EP2669940A1 Substrate with though electrode and method for producing same
12/04/2013EP2669934A1 Semiconductor device
12/04/2013EP2669933A1 Gallium nitride-based semiconductor device and method for producing semiconductor device
12/04/2013EP2669932A1 Method for manufacturing a transistor comprising semiconductor nanoscale patterns using block copolymers
12/04/2013EP2668662A2 Semiconductor device and method for growing semiconductor crystal
12/04/2013CN203325912U High voltage device
12/04/2013CN203325911U Silicon controlled rectifier chip composition with gate-cathode PN junction protected by table board
12/04/2013CN203325910U Plane silicon controlled device chip
12/04/2013CN203325909U High-frequency transistor
12/04/2013CN203325908U 半导体器件 Semiconductor devices
12/04/2013CN203325907U Insulated gate semiconductor device structure
12/04/2013CN203324617U Array substrate and display device
12/04/2013CN103430316A Semiconductor device
12/04/2013CN103430315A Power semiconductor field effect transistor structure with charge trapping material in the gate dielectric
12/04/2013CN103430310A Complementary darlington emitter follower with improved switching speed and improved cross-over control and increased output voltage
12/04/2013CN103430300A Power electronic devices with edge passivation
12/04/2013CN103430299A 信号处理电路 The signal processing circuit
12/04/2013CN103430295A Semiconductor element and method for producing same
12/04/2013CN103430294A Compound semiconductor device and method for manufacturing same
12/04/2013CN103430293A Method for producing organic transistor, organic transistor, method for producing semiconductor device, semiconductor device, and electronic apparatus
12/04/2013CN103430292A Diode, circuit employing same and methods of manufacture
12/04/2013CN103429530A Method for producing graphene, graphene produced on substrate, and graphene on substrate
12/04/2013CN103427603A Extra-high-voltage assembly and method for operating extra-high-voltage assembly
12/04/2013CN103426937A Trench terminal-structured Schottky device and preparation method thereof
12/04/2013CN103426936A Vertical current regulative diode and manufacturing method thereof
12/04/2013CN103426935A Semiconductor device and method for manufacturing the same
12/04/2013CN103426934A Oxide thin film transistor, method for fabricating tft, array substrate for display device and method for fabricating the same
12/04/2013CN103426933A Thin film transistor and pixel circuit having the same
12/04/2013CN103426932A 双resurf ldmos器件 Dual resurf ldmos devices
12/04/2013CN103426931A Strain channel fin type field effect transistor and manufacturing method thereof
12/04/2013CN103426930A System and method for signal amplification with a dual-gate bio-field effect transistor
12/04/2013CN103426929A Semiconductor device and method for manufacturing same, integrated circuit, and superjunction semiconductor device
12/04/2013CN103426928A Semiconductor device and method for manufacturing the device
12/04/2013CN103426927A Ldmos晶体管及制造方法 Ldmos transistor and a method of manufacturing
12/04/2013CN103426926A Semiconductor structure, forming method of semiconductor structure, PMOS crystal valve and forming method of PMOS crystal valve
12/04/2013CN103426925A Low-grid electric charge groove power MOS device and manufacturing method thereof
12/04/2013CN103426924A Groove-type power MOSFET and manufacturing method thereof
12/04/2013CN103426923A Semiconductor device, transistor including same, and method for manufacturing same
12/04/2013CN103426922A Semiconductor device and manufacturing method of the same
12/04/2013CN103426921A Thyristor component and manufacturing method thereof
12/04/2013CN103426920A Storage materials and application storage materials in nonvolatile charge trapping type memory device
12/04/2013CN103426919A Borderless contact for an aluminum-containing gate and forming method thereof
12/04/2013CN103426918A Semiconductor device and production method thereof
12/04/2013CN103426917A Nonvolatile memory device and method for fabricating the same
12/04/2013CN103426916A Power MOSFET structure and method
12/04/2013CN103426915A Semiconductor device with self-aligned interconnects
12/04/2013CN103426914A Heterojunction semiconductor device and manufacturing method
12/04/2013CN103426913A Partial SOI (silicon on insulator) super junction high-voltage power semiconductor device
12/04/2013CN103426912A Semiconductor device including superjunction structure and method of manufacturing
12/04/2013CN103426911A 半导体装置 Semiconductor device
12/04/2013CN103426910A Power semiconductor device and edge terminal structure thereof
12/04/2013CN103426909A Semiconductor device including first and second semiconductor materials
12/04/2013CN103426908A Semiconductor structure capable of protecting boron phosphorus silicon glass layer and manufacturing method thereof
12/04/2013CN103426907A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
12/04/2013CN103426906A Grooved power metal-oxide-semiconductor field effect transistor and manufacturing method thereof
12/04/2013CN103426905A Semiconductor structure, semiconductor device having a semiconductor structure, and method for manufacturing a semiconductor structure
12/04/2013CN103426898A 显示装置 The display device
12/04/2013CN103426885A Non-self-alignment and fixed hydrocarbon storage structure
12/04/2013CN103426770A Metal gate finFET device and method of fabricating same
12/04/2013CN103426766A Pmos晶体管及其形成方法 Pmos transistor and method of forming
12/04/2013CN103426762A Depletion transistor and manufacture method thereof
12/04/2013CN103426761A MOSFET element and preparation method
12/04/2013CN103426758A Deep-exhausting channel field effect transistor and preparing method thereof
12/04/2013CN103426756A Semiconductor component and manufacture method thereof
12/04/2013CN103426755A Semiconductor component and forming method thereof
12/04/2013CN103426753A Preparation method for source drain region and metal oxide semiconductor (MOS) device
12/04/2013CN103426739A Methods of forming semiconductor devices using pre-amorphization implants, and devices formed so
12/04/2013CN103426738A Trench semiconductor device with edge end portion structure and manufacturing method of trench semiconductor device
12/04/2013CN103426734A Ion implantation method and device, field-effect tube manufacturing method and field-effect tube
12/04/2013CN103426732A Low-temperature wafer bonding method and structure formed with method
12/04/2013CN103426725A Layered bonded structures formed from reactive bonding of zinc metal and zinc peroxide
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