| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 11/07/2013 | US20130292768 Array substrate and method of fabricating the same |
| 11/07/2013 | US20130292764 Semiconductor Device with Drain-End Drift Diminution |
| 11/07/2013 | US20130292763 Semiconductor Devices Having Reduced On Resistance |
| 11/07/2013 | US20130292761 Trench power mosfet and fabrication method thereof |
| 11/07/2013 | US20130292760 Power transistor device |
| 11/07/2013 | US20130292759 Trench transistor |
| 11/07/2013 | US20130292758 Nonvolatile semiconductor memory device |
| 11/07/2013 | US20130292757 Semiconductor device and method of manufacturing the same |
| 11/07/2013 | US20130292756 Method and apparatus for utilizing contact-sidewall capacitance in a single poly non-volatile memory cell |
| 11/07/2013 | US20130292749 Semiconductor device and manufacturing method of the same |
| 11/07/2013 | US20130292748 Method for manufacturing insulated gate field effect transistor |
| 11/07/2013 | US20130292747 Semiconductor device and method for fabricating the same |
| 11/07/2013 | US20130292746 Divot-free planarization dielectric layer for replacement gate |
| 11/07/2013 | US20130292745 Finfet compatible pc-bounded esd diode |
| 11/07/2013 | US20130292744 Integrated circuit and method for fabricating the same having a replacement gate structure |
| 11/07/2013 | US20130292738 Semiconductor device |
| 11/07/2013 | US20130292704 Silicon carbide structure and method of producing the same |
| 11/07/2013 | US20130292703 Semiconductor device and method for manufacturing same |
| 11/07/2013 | US20130292702 Semiconductor device and method for manufacturing same |
| 11/07/2013 | US20130292701 Doped Core Trigate FET Structure and Method |
| 11/07/2013 | US20130292700 Method for fabricating semiconductor device and the semiconductor device |
| 11/07/2013 | US20130292699 Nitride semiconductor device |
| 11/07/2013 | US20130292698 Iii-n material structure for gate-recessed transistors |
| 11/07/2013 | US20130292696 Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor wafer |
| 11/07/2013 | US20130292695 Schottky barrier diode and method for manufacturing schottky barrier diode |
| 11/07/2013 | US20130292694 Enhancement Mode III-Nitride Transistors with Single Gate Dielectric Structure |
| 11/07/2013 | US20130292691 Techniques for forming optoelectronic devices |
| 11/07/2013 | US20130292690 Semiconductor device and method of manufacturing the same |
| 11/07/2013 | US20130292689 Wafer level packaged gan power semiconductor device and the manufacturing method thereof |
| 11/07/2013 | US20130292688 Gallium nitride semiconductor substrate with semiconductor film formed therein |
| 11/07/2013 | US20130292686 Method and system for planar regrowth in gan electronic devices |
| 11/07/2013 | US20130292684 Semiconductor Package and Methods of Formation Thereof |
| 11/07/2013 | US20130292683 Semiconductor Heterobarrier Electron Device And Method of Making |
| 11/07/2013 | US20130292682 Thin film transistor substrate, display device, and method for manufacturing thin film transistor substrate |
| 11/07/2013 | US20130292680 Tft substrate including a data insulating layer with contact hole overlapping channel region |
| 11/07/2013 | US20130292678 Thin Film Transistor Substrate, Method of Fabricating the Same and Flat Display Having the Same |
| 11/07/2013 | US20130292677 Semiconductor device |
| 11/07/2013 | US20130292676 Phase-stabilized thin films, structures and devices including the thin films, and methods of forming same |
| 11/07/2013 | US20130292675 Semiconductor device |
| 11/07/2013 | US20130292674 Multilayer select devices and methods related thereto |
| 11/07/2013 | US20130292670 Field effect transistor |
| 11/07/2013 | US20130292668 P-type transparent oxide semiconductor, transistor having the same, and manufacture method of the same |
| 11/07/2013 | DE112012000648T5 Schottky-Barrieren-Diode, Verfahren zum Bilden der Diode und Entwurfsstruktur für die Diode Schottky barrier diode, method for forming the diode and design structure for the diode |
| 11/07/2013 | DE112011104773T5 Verfahren zur Herstellung eines Nitrid-Halbleiterelements A method for producing a nitride semiconductor element |
| 11/07/2013 | DE112007000697B4 Leistungshalbleitervorrichtung Power semiconductor device |
| 11/07/2013 | DE102013207698A1 Halbleitervorrichtung Semiconductor device |
| 11/07/2013 | DE102013104337A1 Halbleitergehäuse und Verfahren zu seiner Herstellung Semiconductor package and method for its preparation |
| 11/07/2013 | DE102012207501A1 Halbleiterschichtenstruktur Semiconductor layer structure |
| 11/07/2013 | DE102012206405B4 Verfahren zur Erzielung erhöhter Bauteilzuverlässigkeit eines Halbleiterbauelements durch Bereitstellen günstigerer Prozessbedingungen beim Aufwachsen einer Schicht mit großem ε Method of achieving increased component reliability of a semiconductor device by providing favorable process conditions during the growth of a layer with large ε |
| 11/07/2013 | DE102012108290A1 Struktur für FinFETs sowie System von SRAM-Zellen und Speicherzelle mit einer solchen Struktur Structure for FinFETs and system of SRAM cells and the memory cell having such a structure |
| 11/07/2013 | DE102011079569B4 Leistungs- oder Stromverteilungssystem eines Flugzeuges mit einer aktiven Transistor-Klemmschaltung sowie zugehöriges Verfahren zum aktiven Pegelhalten Performance or power distribution system of an aircraft with a transistor active clamp circuit and associated method for keeping active level |
| 11/07/2013 | DE102005009974B4 Transistor mit flachem Germaniumimplantationsbereich im Kanalund Verfahren zur Herstellung Transistor with shallow germanium implantation region in Kanalund method for producing |
| 11/06/2013 | EP2660870A1 Field-effect transistor and method for manufacturing same |
| 11/06/2013 | EP2660869A1 Semiconductor device and method for manufacturing same |
| 11/06/2013 | EP2660868A1 Laminate structure including oxide semiconductor thin film layer, and thin film transistor |
| 11/06/2013 | EP2660867A2 Testing circuit, wafer, measuring apparatus, device manufacturing method and display device |
| 11/06/2013 | EP2660866A2 Semiconductor device and method of manufacturing the same |
| 11/06/2013 | EP2660865A1 High voltage semiconductor device with non-linear resistively graded edge termination |
| 11/06/2013 | EP2660366A1 Silicon carbide substrate, semiconductor device, method for producing silicon carbide substrate, and method for producing semiconductor device |
| 11/06/2013 | EP2659514A2 A method to reduce contact resistance of n-channel transistors by using a iii-v semiconductor interlayer in source and drain |
| 11/06/2013 | CN203277391U Field effect transistor |
| 11/06/2013 | CN203277390U Vertical power part |
| 11/06/2013 | CN203277389U 半导体装置 Semiconductor device |
| 11/06/2013 | CN203277388U Quantum field distributed Trench MOSFET groove terminal structure |
| 11/06/2013 | CN203277387U Field effect transistor and edge structure used for same |
| 11/06/2013 | CN203277329U Semiconductor device |
| 11/06/2013 | CN203276738U Display device and television receiving device |
| 11/06/2013 | CN103384917A Semiconductor substrate and method of producing same |
| 11/06/2013 | CN103384915A Sensing of photons |
| 11/06/2013 | CN103384911A Thin-film transistor device and method for manufacturing same, organic electroluminescent display elements and organic electroluminescent display device |
| 11/06/2013 | CN103384910A Semiconductor device manufacturing method |
| 11/06/2013 | CN103383969A Schottky device and manufacturing method thereof |
| 11/06/2013 | CN103383968A Interface charge compensation Schottky semiconductor device and manufacturing method for same |
| 11/06/2013 | CN103383967A Charge compensation semiconductor device and preparing method thereof |
| 11/06/2013 | CN103383966A Semiconductor device with improved robustness |
| 11/06/2013 | CN103383965A Hybrid fin field effect transistor |
| 11/06/2013 | CN103383964A Structure for finfets |
| 11/06/2013 | CN103383963A 半导体结构及其制造方法 The semiconductor structure and a method of manufacturing |
| 11/06/2013 | CN103383962A 半导体结构及其制造方法 The semiconductor structure and a method of manufacturing |
| 11/06/2013 | CN103383961A FinFET结构及其制造方法 FinFET structure and manufacturing method |
| 11/06/2013 | CN103383960A Semiconductor device and method of manufacturing the same |
| 11/06/2013 | CN103383959A Crosswise overgrowth one-dimensional electron gas GaN-base high electron mobility transistor (HEMT) device and manufacturing method thereof |
| 11/06/2013 | CN103383958A Reverse conducting (RC)-insulated gate bipolar transistor (IGBT) device and manufacturing method thereof |
| 11/06/2013 | CN103383957A Reverse conducting insulated gate bipolar transistor (RC-IGBT) device |
| 11/06/2013 | CN103383956A Semiconductor device |
| 11/06/2013 | CN103383955A Semiconductor device and method of manufacturing the same |
| 11/06/2013 | CN103383954A Passive super-junction semiconductor device and manufacturing method for same |
| 11/06/2013 | CN103383953A Passive super-junction groove MOS device and manufacturing method for same |
| 11/06/2013 | CN103383944A 半导体装置 Semiconductor device |
| 11/06/2013 | CN103383943A Semiconductor device and method of manufacturing the same |
| 11/06/2013 | CN103383924A Array substrate and method of fabricating the same |
| 11/06/2013 | CN103383918A Semiconductor structure provided with metal grid electrode and manufacturing method of semiconductor structure |
| 11/06/2013 | CN103383917A Low-voltage diode and manufacturing method thereof |
| 11/06/2013 | CN103383914A 半导体结构及其制造方法 The semiconductor structure and a method of manufacturing |
| 11/06/2013 | CN102496618B 像素结构制作方法 Pixel structure production methods |
| 11/06/2013 | CN102468167B Mos晶体管及其制作方法 Mos transistor and manufacturing method thereof |
| 11/06/2013 | CN102456725B Monocrystal high K gate dielectric material and preparation method thereof |
| 11/06/2013 | CN102364690B Tunneling field effect transistor (TFET) and manufacturing method thereof |
| 11/06/2013 | CN102347357B Metal-oxide-semiconductor field effect transistor (MOSFET) structure and manufacturing method thereof |
| 11/06/2013 | CN102338955B TFT (thin film transistor) pixel unit |