Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2013
11/28/2013WO2013175880A1 Silicon carbide semiconductor device and method for manufacturing same
11/28/2013WO2013175840A1 Silicon carbide semiconductor device and method for manufacturing same
11/28/2013WO2013175557A1 Semiconductor device
11/28/2013WO2013175470A1 Nanoshell, method of fabricating same and uses thereof
11/28/2013WO2013174108A1 Thin film transistor, method for manufacturing same, and array substrate
11/28/2013WO2013174094A1 Dynamic random access memory cell and fabrication method therefor
11/28/2013WO2013174070A1 Semiconductor device and manufacturing method thereof
11/28/2013WO2013173944A1 Semiconductor device manufacturing method
11/28/2013WO2013128480A9 Vertical semiconductor device and manufacturing process of the same
11/28/2013US20130316646 Interface for communication between voltage domains
11/28/2013US20130316524 Transistor of semiconductor device and method for manufacturing the same
11/28/2013US20130316508 Ldmos transistor with asymmetric spacer as gate
11/28/2013US20130316507 Method for manufacturing nitride semiconductor element
11/28/2013US20130316505 Control of local environment for polysilicon conductors in integrated circuits
11/28/2013US20130316504 Semiconductor Device and Method of Fabricating Same
11/28/2013US20130316502 Enhancement Mode III-N HEMTs
11/28/2013US20130316498 Method of manufacturing semiconductor device including insulated gate bipolar transistor and diode
11/28/2013US20130316493 Method for manufacturing semiconductor device
11/28/2013US20130314687 Transverse electric-field type liquid crystal display device, process of manufacturing the same, and scan-exposing device
11/28/2013US20130314575 Solid-state imaging device, method of manufacturing the same, and electronic apparatus
11/28/2013US20130314463 Semiconductor device, method of manufacturing semiconductor device, and liquid discharge apparatus
11/28/2013US20130313691 Thinned wafer and fabricating method thereof
11/28/2013US20130313686 Method for manufacturing semiconductor device, epitaxial substrate for use therein and semi-finished semiconductor device
11/28/2013US20130313685 Carbon material and method of manufacturing the same
11/28/2013US20130313684 Process for forming a planar diode using one mask
11/28/2013US20130313683 Semiconductor wire-array varactor structures
11/28/2013US20130313682 Isolated Through Silicon Via and Isolated Deep Silicon Via Having Total or Partial Isolation
11/28/2013US20130313678 Memory Cells And Methods Of Forming Memory Cells
11/28/2013US20130313677 Structure for picking up a collector and manufacturing method thereof
11/28/2013US20130313676 Method of manufacturing semiconductor devices
11/28/2013US20130313675 Thermal Type Flowmeter
11/28/2013US20130313664 Resistive memory device and fabrication method thereof
11/28/2013US20130313663 Capacitive electromechanical transducer
11/28/2013US20130313661 Method for Processing a Wafer at Unmasked Areas and Previously Masked Areas to Reduce a Wafer Thickness
11/28/2013US20130313659 Method for Producing High-Purity Lanthanum, High-Purity Lanthanum, Sputtering Target Formed from High-Purity Lanthanum, and Metal Gate Film Having Highy-Purity Lanthanum as Main Component
11/28/2013US20130313658 High-k dielectric layer based semiconductor structures and fabrication process thereof
11/28/2013US20130313657 Methods of forming fluorinated hafnium oxide gate dielectrics by atomic layer deposition
11/28/2013US20130313656 Methods of atomic layer deposition of hafnium oxide / erbium oxide bi-layer as advanced gate dielectrics
11/28/2013US20130313655 Semiconductor device and a method for manufacturing the same
11/28/2013US20130313650 Tid hardened mos transistors and fabrication process
11/28/2013US20130313646 Structure and Method for Fabricating Fin Devices
11/28/2013US20130313645 Semiconductor element and display device using the same
11/28/2013US20130313642 Semiconductor Device Having Gradient Doping Profile
11/28/2013US20130313641 Double diffused metal oxide semiconductor device
11/28/2013US20130313640 Semiconductor Device and Method of Forming Junction Enhanced Trench Power Mosfet
11/28/2013US20130313639 Semiconductor device
11/28/2013US20130313636 Termination arrangement for vertical mosfet
11/28/2013US20130313635 Semiconductor device
11/28/2013US20130313634 Power semiconductor device and edge terminal structure thereof
11/28/2013US20130313633 Semiconductor Device and Method of Forming Junction Enhanced Trench Power Mosfet having Gate Structure Embedded within Trench
11/28/2013US20130313632 Semiconductor Device with Voltage Compensation Structure
11/28/2013US20130313630 Semiconductor integrated circuit device and a method of manufacturing the same
11/28/2013US20130313629 Three-dimensional semiconductor memory device and a method of fabricating the same
11/28/2013US20130313628 Sonos structure, manufacturing method thereof and semiconductor with the same structure
11/28/2013US20130313627 Multi-Level Contact to a 3D Memory Array and Method of Making
11/28/2013US20130313625 Semiconductor device and method of fabricating the same
11/28/2013US20130313624 Semiconductor device and method for manufacturing semiconductor device
11/28/2013US20130313620 Method and structure for radiation hardening a semiconductor device
11/28/2013US20130313619 Fin field-effect-transistor (fet) structure and manufacturing method
11/28/2013US20130313617 Embedded JFETs for High Voltage Applications
11/28/2013US20130313614 METAL SILICIDE SELF-ALIGNED SiGe HETEROJUNCTION BIPOLAR TRANSISTOR AND METHOD OF FORMING THE SAME
11/28/2013US20130313613 Selectively Area Regrown III-Nitride High Electron Mobility Transistor
11/28/2013US20130313612 HEMT GaN DEVICE WITH A NON-UNIFORM LATERAL TWO DIMENSIONAL ELECTRON GAS PROFILE AND METHOD OF MANUFACTURING THE SAME
11/28/2013US20130313611 A non-uniform lateral profile of two-dimensional electron gas charge density in type iii nitride hemt devices using ion implantation through gray scale mask
11/28/2013US20130313610 Semiconductor device having a necked semiconductor body and method of forming semiconductor bodies of varying width
11/28/2013US20130313609 Nitride semiconductor device and manufacturing method thereof
11/28/2013US20130313608 Semiconductor device
11/28/2013US20130313607 Silicon Controlled Rectifier With Stress-Enhanced Adjustable Trigger Voltage
11/28/2013US20130313586 Polarization doping in nitride based diodes
11/28/2013US20130313579 Dilute sn-doped ge alloys
11/28/2013US20130313578 Method of driving a light emitting device
11/28/2013US20130313577 Laminate substrate and method of fabricating the same
11/28/2013US20130313575 Semi-insulating silicon carbide monocrystal and method of growing the same
11/28/2013US20130313573 Semiconductor rectifier
11/28/2013US20130313572 Semiconductor device with strain-inducing regions and method thereof
11/28/2013US20130313571 Silicon carbide bipolar junction transistor comprising shielding regions and methods of manufacturing the same
11/28/2013US20130313570 Monolithically integrated sic mosfet and schottky barrier diode
11/28/2013US20130313569 Semiconductor Gas Sensor And Method For Producing The Same
11/28/2013US20130313568 Silicon carbide semiconductor device and method for manufacturing the same
11/28/2013US20130313567 Base substrate, gallium nitride crystal multi-layer substrate and production process therefor
11/28/2013US20130313565 Compound semiconductor device
11/28/2013US20130313564 Semiconductor device and method for manufacturing same
11/28/2013US20130313563 Semiconductor device and manufacturing method for the same
11/28/2013US20130313561 Group iii-nitride transistor with charge-inducing layer
11/28/2013US20130313560 Non-uniform two dimensional electron gas profile in iii-nitride hemt devices
11/28/2013US20130313552 Heterojunction bipolar transistors with thin epitaxial contacts
11/28/2013US20130313551 Heterojunction bipolar transistors with intrinsic interlayers
11/28/2013US20130313550 Semiconductor device
11/28/2013US20130313549 Sputtering target, method for forming amorphous oxide thin film using the same, and method for manufacturing thin film transistor
11/28/2013US20130313548 Oxide semiconductor field effect transistor and method for manufacturing the same
11/28/2013US20130313546 Oxide Thin Film Transistor, Method for Fabricating TFT, Array Substrate for Display Device and Method for Fabricating the Same
11/28/2013US20130313545 Display device
11/28/2013US20130313530 Oxide thin film transistor, method for fabricating tft, display device having tft, and method for fabricating the same
11/28/2013US20130313525 Nanowire-based Transistor, Method for Fabricating the Transistor, Semiconductor Component Incorporating the Transistor, Computer Program and Storage Medium Associated with the Fabrication Method
11/28/2013US20130313524 Ambipolar silicon nanowire field effect transistor
11/28/2013US20130313523 Graphene electronic device and method of fabricating the same
11/28/2013US20130313522 Graphene-based semiconductor device
11/28/2013US20130313520 Apparatus and methods for improving parallel conduction in a quantum well device
11/28/2013US20130313513 Semiconductor devices having modulated nanowire counts
11/28/2013US20130313512 Graphene electronic device and method of fabricating the same
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