Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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12/06/1977 | US4062034 Semiconductor device having a hetero junction |
12/06/1977 | US4062033 Schottky barrier type semiconductor device |
12/06/1977 | US4062032 Gate turn off semiconductor rectifiers |
12/06/1977 | US4061928 Circuit arrangement for the protection of inputs of integrated MOS circuits |
12/06/1977 | US4061510 Semiconductor |
12/06/1977 | US4061506 Semiconductors |
11/29/1977 | US4060828 Semiconductor device having multi-layer wiring structure with additional through-hole interconnection |
11/29/1977 | US4060827 Semiconductor device and a method of making the same |
11/29/1977 | US4060826 Light activated thyristor capable of activation by intensity radiation |
11/29/1977 | US4060825 High speed high power two terminal solid state switch fired by dV/dt |
11/29/1977 | US4060824 Slow speed semiconductor switching device |
11/29/1977 | US4060821 Field controlled thyristor with buried grid |
11/29/1977 | US4060820 Low noise read-type diode |
11/29/1977 | US4060796 Semiconductor memory device |
11/29/1977 | US4060427 Method of forming an integrated circuit region through the combination of ion implantation and diffusion steps |
11/22/1977 | US4059814 Controllable semiconductor element |
11/22/1977 | US4058887 Method for forming a transistor comprising layers of silicon dioxide and silicon nitride |
11/15/1977 | US4058825 Complementary transistor structure having two epitaxial layers and method of manufacturing same |
11/15/1977 | US4058824 Semiconductor diode |
11/15/1977 | US4058822 High voltage, low on-resistance diffusion-self-alignment metal oxide semiconductor device and manufacture thereof |
11/15/1977 | US4058368 Semiconductor, palladium, nickel, platinum or alloy electrode |
11/15/1977 | US4057894 Controllably valued resistor |
11/08/1977 | US4057844 MOS input protection structure |
11/08/1977 | US4057824 P+ Silicon integrated circuit interconnection lines |
11/08/1977 | US4057823 Porous silicon dioxide moisture sensor and method for manufacture of a moisture sensor |
11/08/1977 | US4057822 Channel type photo-electric energy transducer |
11/08/1977 | US4057821 Non-volatile semiconductor memory device |
11/08/1977 | US4057820 Dual gate MNOS transistor |
11/08/1977 | US4057819 Semiconductor device |
11/01/1977 | US4056825 Drain and method of manufacture |
11/01/1977 | US4056810 Integrated injection logic memory circuit |
11/01/1977 | US4056737 Anti-aliasing pre-filter circuit for semiconductor charge transfer device |
11/01/1977 | US4056642 Method of fabricating metal-semiconductor interfaces |
11/01/1977 | US4056408 Reducing the switching time of semiconductor devices by nuclear irradiation |
11/01/1977 | US4055885 Charge transfer semiconductor device with electrodes separated by oxide region therebetween and method for fabricating the same |
11/01/1977 | US4055884 Fabrication of power field effect transistors and the resulting structures |
10/25/1977 | US4055837 Dynamic single-transistor memory element for relatively permanent memories |
10/25/1977 | US4055836 Charge transfer readout circuits |
10/25/1977 | US4054989 High reliability, low leakage, self-aligned silicon gate FET and method of fabricating same |
10/18/1977 | US4054897 Semiconductor device with high frequency, high power output |
10/18/1977 | US4054895 Silicon-on-sapphire mesa transistor having doped edges |
10/18/1977 | US4054894 Edgeless transistor |
10/18/1977 | US4054893 Semiconductor switching devices utilizing nonohmic current paths across P-N junctions |
10/18/1977 | US4054497 Method for electrolytically etching semiconductor material |
10/11/1977 | US4053925 Method and structure for controllng carrier lifetime in semiconductor devices |
10/11/1977 | US4053924 Ion-implanted semiconductor abrupt junction |
10/11/1977 | US4053922 Light triggered thyristor having controlled turn on delay |
10/11/1977 | US4053921 Semiconductor component having emitter short circuits |
10/11/1977 | US4053917 Drain source protected MNOS transistor and method of manufacture |
10/11/1977 | US4053916 Silicon on sapphire MOS transistor |
10/11/1977 | US4053349 Masking |
10/04/1977 | US4052269 Method of manufacturing a semiconductor device and semiconductor device manufactured by using said method |
09/27/1977 | US4051507 Semiconductor structures |
09/27/1977 | US4051506 Silicon, silicon dioxide diffusion mask, n- and p-type junctions |
09/27/1977 | US4051505 Two-dimensional transfer in charge transfer device |
09/27/1977 | US4051504 Ion implanted zener diode |
09/27/1977 | US4051273 Field effect transistor structure and method of making same |
09/20/1977 | US4050083 Integrated thermally sensitive power switching semiconductor device, including a thermally self-protected version |
09/20/1977 | US4049975 Transistor circuits |
09/20/1977 | US4049478 Utilization of an arsenic diffused emitter in the fabrication of a high performance semiconductor device |
09/20/1977 | US4049477 Method for fabricating a self-aligned metal oxide field effect transistor |
09/20/1977 | US4049476 Method of manufacturing a semiconductor integrated circuit device which includes at least one V-groove jfet and one bipolar transistor |
09/20/1977 | US4048712 Processes for manufacturing semiconductor devices |
09/13/1977 | US4048649 Superintegrated v-groove isolated bipolar and vmos transistors |
09/13/1977 | US4048648 High carrier velocity fet magnetic sensor |
09/13/1977 | US4048647 Solid state disconnect device |
09/13/1977 | US4048646 Dual-gate schottky barrier gate fet having an intermediate electrode and a method of making same |
09/13/1977 | US4048569 Receiver automatic gain control system |
09/13/1977 | US4048525 Output circuit for charge transfer transversal filter |
09/13/1977 | US4048519 Regenerator circuit for CCD elements |
09/13/1977 | US4048350 Semiconductor device having reduced surface leakage and methods of manufacture |
09/13/1977 | US4047976 Method for manufacturing a high-speed semiconductor device |
09/13/1977 | US4047975 Process for the production of a bipolar integrated circuit |
09/13/1977 | US4047974 Process for fabricating non-volatile field effect semiconductor memory structure utilizing implanted ions to induce trapping states |
09/13/1977 | US4047285 Self-aligned CMOS for bulk silicon and insulating substrate device |
09/13/1977 | US4047284 Process for bulk silicon and insulating substrate device |
09/06/1977 | US4047220 Bipolar transistor structure having low saturation resistance |
09/06/1977 | US4047219 Radiation sensitive thyristor structure with isolated detector |
09/06/1977 | US4047218 Semiconductor devices with improved turn-off characteristics |
09/06/1977 | US4047217 High-gain, high-voltage transistor for linear integrated circuits |
09/06/1977 | US4047216 High speed low capacitance charge coupled device in silicon-sapphire |
09/06/1977 | US4047215 Uniphase charge coupled devices |
09/06/1977 | US4047214 Electrostatically bonded dielectric-on-semiconductor device, and a method of making the same |
09/06/1977 | US4047196 High voltage semiconductor device having a novel edge contour |
09/06/1977 | US4047195 Semiconductor structure |
09/06/1977 | US4047051 Method and apparatus for replicating a charge packet |
09/06/1977 | US4046609 Method of manufacturing photo-diodes utilizing sequential diffusion |
09/06/1977 | US4046605 Method of electrically isolating individual semiconductor circuits in a wafer |
09/06/1977 | US4046595 Method for forming semiconductor devices |
08/30/1977 | US4045811 Semiconductor integrated circuit device including an array of insulated gate field effect transistors |
08/30/1977 | US4045810 Bucket-brigade delay line having reduced parasitic capacitances |
08/30/1977 | US4045784 Programmable read only memory integrated circuit device |
08/30/1977 | US4045705 Electron bombarded semiconductor device |
08/30/1977 | US4045252 Method of manufacturing a semiconductor structure for microwave operation, including a very thin insulating or weakly doped layer |
08/30/1977 | US4045251 Process for producing an inversely operated transistor |
08/30/1977 | US4045250 Method of making a semiconductor device |
08/30/1977 | US4045248 Making Schottky barrier devices |
08/30/1977 | US4044452 Process for making field effect and bipolar transistors on the same semiconductor chip |
08/23/1977 | US4043849 Planar diffusion method for an I2 L circuit including a bipolar analog circuit part |
08/23/1977 | US4043848 Method of fabrication of insulated gate field effect semiconductor devices |