| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 03/09/1983 | EP0073370A2 Integrated circuit structure and method for forming a recessed isolation structure for integrated circuits |
| 03/09/1983 | EP0073312A2 Method of electron beam evaporating reactive metals onto semiconductors |
| 03/08/1983 | US4376286 High power MOSFET with low on-resistance and high breakdown voltage |
| 03/08/1983 | US4375999 Method of manufacturing a semiconductor device |
| 03/08/1983 | US4375993 Method of producing a semiconductor device by simultaneous multiple laser annealing |
| 03/08/1983 | US4375717 Process for producing a field-effect transistor |
| 03/08/1983 | CA1142646A1 Nonvolatile semiconductor memory device |
| 03/08/1983 | CA1142632A1 Photovoltaic cells employing a zinc phosphide absorber-generator |
| 03/07/1983 | EP0020708A4 Semiconductor memory device. |
| 03/03/1983 | WO1983000776A1 Diode for monolithic integrated circuit |
| 03/03/1983 | WO1983000775A1 A planar transistor with an integrated overvoltage guard |
| 03/02/1983 | EP0073130A2 Method for manufacturing a mask type Read Only Memory |
| 03/02/1983 | EP0073075A2 Semiconductor device comprising polycrystalline silicon and method of producing the same |
| 03/02/1983 | EP0073019A2 Memory device and process for manufacturing the same |
| 03/02/1983 | EP0072967A2 Process for manufacuting a highly integrated complementary MOS field effect transistor circuit using silicon gate technology |
| 03/02/1983 | EP0072966A2 Integrated circuit structure and method for forming a recessed isolation structure for integrated circuits |
| 03/01/1983 | US4375652 High-speed time delay and integration solid state scanner |
| 03/01/1983 | US4375645 Semiconductor device and a method of producing the same |
| 03/01/1983 | US4375643 Application of grown oxide bumper insulators to a high-speed VLSI SASMESFET |
| 03/01/1983 | US4375125 Method of passivating pn-junction in a semiconductor device |
| 03/01/1983 | US4375124 Power static induction transistor fabrication |
| 03/01/1983 | CA1142275A1 Self-aligned method for making bipolar transistor having minimum base to emitter contact spacing |
| 03/01/1983 | CA1142274A1 Vertical field effect transistor |
| 03/01/1983 | CA1142273A1 Method of manufacturing a field effect transistor devices |
| 03/01/1983 | CA1142271A1 Field effect semiconductor device |
| 03/01/1983 | CA1142270A1 Self-alignment method of depositing semiconductor metallization |
| 03/01/1983 | CA1142269A1 Multidrain metal-oxide-semiconductor field-effects devices |
| 03/01/1983 | CA1142268A1 Semiconductor device |
| 03/01/1983 | CA1142267A1 Complementary transistor structure and method for manufacture |
| 03/01/1983 | CA1142266A1 Self-aligned micrometer bipolar transistor device and process |
| 03/01/1983 | CA1142265A1 High voltage dielectrically isolated solid-state switch |
| 03/01/1983 | CA1142261A1 Interconnection of opposite conductivity type semiconductor regions |
| 02/23/1983 | EP0072763A2 Semiconductor memory device |
| 02/23/1983 | EP0072660A2 Field effect transistor and method for its production |
| 02/23/1983 | EP0072647A2 Varactor trimming for MMICS |
| 02/23/1983 | EP0072603A2 Process for producing a semiconductor device having an insulating layer of silicon dioxide covered by a film of silicon oxynitride |
| 02/23/1983 | EP0072522A2 Process for manufacturing integrated MOS field effect transistors, particularly circuits having complementary MOS field effect transistors with an additional conductor level comprising metal silicides |
| 02/22/1983 | US4375087 Electrically erasable programmable read only memory |
| 02/22/1983 | US4375085 Dense electrically alterable read only memory |
| 02/22/1983 | US4375074 Dual-mode transistor turn-off |
| 02/22/1983 | US4374700 Method of manufacturing silicide contacts for CMOS devices |
| 02/22/1983 | US4374457 Method of fabricating complex micro-circuit boards and substrates |
| 02/22/1983 | US4374455 Method for manufacturing a vertical, grooved MOSFET |
| 02/22/1983 | US4374454 Multistage oxidation of a masked silicon surface |
| 02/22/1983 | CA1141870A1 Method for forming an insulating film on a semiconductor substrate surface |
| 02/22/1983 | CA1141869A1 Method for manufacturing a semiconductor device |
| 02/22/1983 | CA1141868A1 Process for production of integrated mos circuits with and without mnos memory transistors in silicon-gate technology |
| 02/22/1983 | CA1141867A1 Vmos/bipolar power switching device |
| 02/17/1983 | WO1983000582A1 Controlled breakover bidirectional semiconductor switch |
| 02/16/1983 | EP0072221A2 Non-volatile electrically programmable memory device |
| 02/16/1983 | EP0072216A2 The production of semiconductor devices by methods involving annealing |
| 02/16/1983 | EP0072209A2 Junction short-circuiting-type programmable read-only memory device |
| 02/16/1983 | EP0071916A2 Power MOS field effect transistor and method of producing the same |
| 02/16/1983 | EP0071915A2 Epitaxial transistor |
| 02/16/1983 | EP0071665A1 Method of producing a monolithic integrated solid-state circuit with at a least one bipolar planar transistor |
| 02/16/1983 | EP0071648A1 Semiconductor device |
| 02/15/1983 | US4374430 Semiconductor PROM device |
| 02/15/1983 | US4374393 Light triggered thyristor device |
| 02/15/1983 | US4374389 High breakdown voltage semiconductor device |
| 02/15/1983 | US4374334 Signal comparator apparatus |
| 02/15/1983 | US4374012 Method of making semiconductor device having improved Schottky-barrier junction |
| 02/15/1983 | US4373966 Forming Schottky barrier diodes by depositing aluminum silicon and copper or binary alloys thereof and alloy-sintering |
| 02/15/1983 | US4373965 Forming oxide-nitride-oxide mask followed by implantation followed by oxidation |
| 02/15/1983 | US4373255 Forming a thermally crystallized pure silicon dioxide layer while preventing reaction of contact metals with environment |
| 02/15/1983 | US4373254 Method of fabricating buried contacts |
| 02/15/1983 | US4373253 Integrated CMOS process with JFET |
| 02/15/1983 | US4373252 Method for manufacturing a semiconductor structure having reduced lateral spacing between buried regions |
| 02/15/1983 | US4373251 Method of manufacturing a semiconductor device |
| 02/15/1983 | US4373250 Process for fabricating a high capacity memory cell |
| 02/15/1983 | US4373249 Method of manufacturing a semiconductor integrated circuit device |
| 02/15/1983 | US4373248 Method of making high density semiconductor device such as floating gate electrically programmable ROM or the like |
| 02/15/1983 | CA1141479A1 Thyristor with continuous emitter shunt |
| 02/15/1983 | CA1141478A1 Thin foil semiconductor negative effective mass device and circuit arrangement therefor |
| 02/15/1983 | CA1141467A1 Serial-parallel-serial ccd memory system with fan out and fan in circuits |
| 02/15/1983 | CA1141466A1 Ccd parallel-serial and serial-parallel charge transfer method and apparatus |
| 02/09/1983 | EP0071494A1 Method of making integrated bipolar transistors of very small dimensions |
| 02/09/1983 | EP0071335A2 Field effect transistor |
| 02/09/1983 | EP0071276A2 High switching speed semiconductor device containing graded killer impurity |
| 02/09/1983 | EP0071244A2 Thin-film transistor and method of manufacture therefor |
| 02/09/1983 | EP0071204A2 Method for forming recessed dielectric isolation |
| 02/09/1983 | EP0071161A2 A transistor having the mesh emitter structure |
| 02/09/1983 | EP0071042A2 Memory array |
| 02/09/1983 | EP0071029A2 Method for fabricating self-passivated composite silicon-silicide conductive electrodes |
| 02/08/1983 | US4373166 Schottky Barrier diode with controlled characteristics |
| 02/08/1983 | US4372033 Method of making coplanar MOS IC structures |
| 02/08/1983 | US4372032 Single crystal indium phosphide substrate |
| 02/08/1983 | US4372030 Forming a substrate bias terminal which is element isolated by an oxide layer |
| 02/08/1983 | CA1141029A1 Nonvolatile static random access memory devices |
| 02/03/1983 | WO1983000407A1 Monolithically merged field effect transistor and bipolar junction transistor |
| 02/01/1983 | US4371956 Semiconductor device |
| 02/01/1983 | US4371955 Charge-pumping MOS FET memory device |
| 02/01/1983 | US4371885 Charge coupled device improved meander channel serial register |
| 02/01/1983 | US4371884 InAs-GaSb Tunnel diode |
| 02/01/1983 | US4371882 Process for preparing isolated junctions in thin-film semiconductors |
| 02/01/1983 | US4371406 Solid-state device |
| 02/01/1983 | US4371403 Method of providing gettering sites through electrode windows |
| 02/01/1983 | CA1140682A1 Intermetallic barrier region for gold conductor contacts |
| 01/26/1983 | EP0070810A2 Method of making a field effect transistor with a modified metal semiconductor Schottky barrier depletion region |
| 01/26/1983 | EP0070744A2 Insulated gate field effect transistor |
| 01/26/1983 | EP0070713A2 A semiconductor device comprising a bulk-defect region and a process for producing such a semiconductor device |