| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 07/21/1983 | WO1983002529A1 Planar semiconductor device |
| 07/21/1983 | WO1983002528A1 Darlington transistor circuit |
| 07/20/1983 | EP0084000A2 CMOS device |
| 07/20/1983 | EP0083816A1 Semiconductor device having an interconnection pattern |
| 07/20/1983 | EP0083815A2 Lateral junction field effect transistor device |
| 07/20/1983 | EP0083801A2 MIS field-effect transistor with charge carriers injection |
| 07/20/1983 | EP0083785A2 Method of forming self-aligned field effect transistors in integrated circuit structures |
| 07/20/1983 | EP0083784A2 Procedure for manufacturing integrated circuit devices having sub-micrometer dimension elements, and resulting structure |
| 07/20/1983 | EP0083783A2 Fabrication method for integrated circuit structures including field effect transistors of sub-micrometer gate length, and integrated circuit structure fabricated by this method |
| 07/20/1983 | EP0083716A2 Process for forming III-V semiconductor MESFET devices, having self-aligned raised source and drain regions |
| 07/20/1983 | EP0012770B1 Fluid cooled semiconductor device |
| 07/19/1983 | US4394677 Thyristor for low-loss triggering of short impulses with Schottky contact to control gate electrode |
| 07/19/1983 | US4394674 Insulated gate field effect transistor |
| 07/19/1983 | US4394673 Rare earth silicide Schottky barriers |
| 07/19/1983 | US4394672 Titanium dioxide rectifier |
| 07/19/1983 | US4394589 Logic circuit including at least one resistor or one transistor having a saturable resistor field effect transistor structure |
| 07/19/1983 | US4394406 Semiconductors, silicon dioxide, silicon nitride or alumina dielectric, etching, lamination, metal contact |
| 07/19/1983 | US4394191 Stacked polycrystalline silicon film of high and low conductivity layers |
| 07/19/1983 | US4394182 Microelectronic shadow masking process for reducing punchthrough |
| 07/19/1983 | US4394181 Masking, doping, oxidizing unmasked sections |
| 07/19/1983 | US4393578 Method of making silicon-on-sapphire FET |
| 07/19/1983 | US4393575 Process for manufacturing a JFET with an ion implanted stabilization layer |
| 07/19/1983 | CA1150417A1 Electrode structure for a semiconductor device |
| 07/19/1983 | CA1150387A1 Electric charge transfer apparatus |
| 07/13/1983 | EP0083447A2 Triple diffused short channel device structure |
| 07/13/1983 | EP0083387A2 Memory device |
| 07/13/1983 | EP0083386A2 Memory cell |
| 07/12/1983 | US4393391 Power MOS transistor with a plurality of longitudinal grooves to increase channel conducting area |
| 07/12/1983 | US4393357 High speed transient recorder systems |
| 07/12/1983 | US4393127 Structure with a silicon body having through openings |
| 07/12/1983 | US4392299 Method of manufacturing low resistance gates and interconnections |
| 07/12/1983 | CA1149969A1 Thyristor |
| 07/12/1983 | CA1149968A1 Method of manufacturing a device in a silicon wafer |
| 07/12/1983 | CA1149950A1 Single polycrystalline silicon memory cell |
| 07/08/1983 | EP0025050A4 Dielectrically isolated high voltage semiconductor devices. |
| 07/07/1983 | WO1983002369A1 Semiconductor tetrode |
| 07/06/1983 | EP0083210A2 A semiconductor device which prevents soft errors |
| 07/06/1983 | EP0083194A2 Electrically erasable programmable read only memory cell having a single transistor |
| 07/06/1983 | EP0083089A2 Process for forming self-aligned metallization patterns for semiconductor devices |
| 07/06/1983 | EP0083088A2 Method of producing field effect transistors having very short channel length |
| 07/06/1983 | EP0083060A2 Semiconductor device including overvoltage protection diode |
| 07/06/1983 | EP0082999A2 Speed-power scaling for MOS circuit |
| 07/06/1983 | EP0082936A2 Non-volatile variable capacity memory device |
| 07/06/1983 | EP0082919A2 Thin film capacitor with dual bottom electrode |
| 07/05/1983 | US4392154 Solid-state color image sensor |
| 07/05/1983 | US4392153 Cooled semiconductor power module including structured strain buffers without dry interfaces |
| 07/05/1983 | US4392150 MOS Integrated circuit having refractory metal or metal silicide interconnect layer |
| 07/05/1983 | US4392149 Bipolar transistor |
| 07/05/1983 | US4392069 Semiconductor switch |
| 07/05/1983 | US4391658 Mirrors, lamination, dopes |
| 07/05/1983 | US4391651 Gallium arsenide semiconductor |
| 07/05/1983 | US4391650 Method for fabricating improved complementary metal oxide semiconductor devices |
| 07/05/1983 | US4391032 Method for manufacturing integrated dynamic RAM one-transistor storage cells |
| 07/05/1983 | CA1149513A1 Dynamic semiconductor memory cell and method for its manufacture |
| 07/05/1983 | CA1149512A1 Dynamic semiconductor memory cell and method for its manufacture |
| 06/29/1983 | EP0082783A2 Process for manufacturing silicon thin-film transistors on an insulating substrate |
| 06/29/1983 | EP0082640A2 Ion implantation method |
| 06/29/1983 | EP0082616A2 Electric signal compressing apparatus |
| 06/29/1983 | EP0082419A2 High power semiconductor device |
| 06/29/1983 | EP0082405A2 Serpentine charge coupled device |
| 06/29/1983 | EP0082331A2 Subsurface avalanche breakdown Zener diode |
| 06/29/1983 | EP0082325A2 Semiconductor device comprising a metallic conductor |
| 06/29/1983 | EP0082256A2 Method of manufacturing a semiconductor device comprising dielectric isolation regions |
| 06/28/1983 | US4390971 Post-metal programmable MOS read only memory |
| 06/28/1983 | US4390890 Saturation-limited bipolar transistor device |
| 06/28/1983 | US4390798 Bias-voltage generator |
| 06/28/1983 | US4389768 Self-aligned process for fabricating gallium arsenide metal-semiconductor field effect transistors |
| 06/28/1983 | CA1149083A1 Static induction transistors with improved gate structures |
| 06/28/1983 | CA1149081A1 Reference voltage generator device |
| 06/28/1983 | CA1149064A1 Low voltage electrically erasable programmable read only memory |
| 06/24/1983 | EP0078318A4 Alterable threshold semiconductor memory device. |
| 06/23/1983 | WO1983002200A1 Method for manufacturing semi-conducting devices and semi-conducting devices thus obtained |
| 06/23/1983 | WO1983002199A1 Non-volatile semiconductor memory device and manufacturing method therefor |
| 06/22/1983 | EP0082012A2 Multilayer electrode of a semiconductor device |
| 06/22/1983 | EP0081999A2 A method of fabricating a MOS transistor on a substrate |
| 06/22/1983 | EP0081998A2 Method of fabricating a MOS device on a substrate |
| 06/22/1983 | EP0081951A2 A semiconductor memory cell |
| 06/22/1983 | EP0081804A2 Process for making adjacent ion impurity implanted wells for manufacturing highly integrated complementary MOS field effect transistor circuits |
| 06/22/1983 | EP0081642A2 Multicellular thyristor |
| 06/22/1983 | EP0081626A2 Dual electron injector structure and semiconductor memory device including a dual electron injector structure |
| 06/21/1983 | US4389662 Light-activated semiconductor device |
| 06/21/1983 | US4389660 High power solid state switch |
| 06/21/1983 | US4389615 CCD Demodulator circuit |
| 06/21/1983 | US4389481 Method of making planar thin film transistors, transistor arrays |
| 06/21/1983 | US4389257 Fabrication method for high conductivity, void-free polysilicon-silicide integrated circuit electrodes |
| 06/21/1983 | US4389256 Method of manufacturing pn junction in group II-VI compound semiconductor |
| 06/21/1983 | US4388755 Structure for and method of manufacturing a semiconductor device by the master slice method |
| 06/15/1983 | EP0081423A1 Semi-conductor device with a low parasitic capacitance having beam-lead type external connectors, and process for the production of that device |
| 06/15/1983 | EP0081422A2 Integrated process for manufacturing logical circuits comprising at least one field effect transistor having a low threshold voltage and a saturation resistor, and logical circuit made by that process |
| 06/15/1983 | EP0081414A1 Semiconductor device having a low parasitive capacitance with beam-lead-type external connectors |
| 06/15/1983 | EP0081396A2 Microwave field effect transistor |
| 06/15/1983 | EP0081269A2 Insulated-gate field-effect transistors |
| 06/15/1983 | EP0081226A2 Method of making semiconductor device |
| 06/14/1983 | US4388704 Non-volatile RAM cell with enhanced conduction insulators |
| 06/14/1983 | US4388636 Static memory cell and memory constructed from such cells |
| 06/14/1983 | US4388635 High breakdown voltage semiconductor device |
| 06/14/1983 | US4388634 Transistor with improved second breakdown capability |
| 06/14/1983 | US4388537 Substrate bias generation circuit |
| 06/14/1983 | US4388532 Solid state image sensor with image sensing elements having charge coupled photocapacitors and a floating gate amplifier |
| 06/14/1983 | US4388525 Precision optical spacers for image sensor filters |